IPA126N10NM3SXKSA1

IPA126N10NM3S MOSFET OptiMOSTM3Power-Transistor,100V PG-TO220FP Features •Idealforhighfrequencyswitchingandsync.rec. •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •N-channel,normallevel •100%avalanchetested •Pb-freeplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Productvalidation QualifiedaccordingtoJEDECStandard Drain Pin 2 Table1KeyPerformanceParameters Parameter Value Unit VDS 100 V RDS(on),max 12.6 mΩ ID 35 A Qoss 35 nC QG(0V..10V) 26 nC Gate Pin 1 Source Pin 3 Type/OrderingCode Package IPA126N10NM3S PG-TO220 FullPAK Final Data Sheet 1 Marking RelatedLinks 126N103S - Rev.2.2,2023-06-06 OptiMOSTM3Power-Transistor,100V IPA126N10NM3S TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Final Data Sheet 2 Rev.2.2,2023-06-06 OptiMOSTM3Power-Transistor,100V IPA126N10NM3S 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current Values Unit Note/TestCondition 35 25 A VGS=10V,TC=25°C VGS=10V,TC=100°C - 140 A TC=25°C - - 90 mJ ID=35A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 33 W TC=25°C Operating and storage temperature Tj,Tstg -55 - 175 °C IEC climatic category; DIN IEC 68-1: 55/175/56 Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche energy, single pulse EAS Gate source voltage Pulsed drain current1) 2) 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case RthJC Values Min. Typ. Max. - - 4.5 °C/W - 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 2.7 3.5 V VDS=VGS,ID=45µA - 0.1 10 1 100 µA VDS=100V,VGS=0V,Tj=25°C VDS=100V,VGS=0V,Tj=125°C IGSS - 1 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 10.9 13.5 12.6 - mΩ VGS=10V,ID=35A VGS=6V,ID=18A Gate resistance RG - 1.1 - Ω - Transconductance gfs - 50 - S |VDS|≥2|ID|RDS(on)max,ID=35A Min. Typ. Max. V(BR)DSS 100 - Gate threshold voltage VGS(th) 2.0 Zero gate voltage drain current IDSS Gate-source leakage current 1) 2) See Diagram 3 for more detailed information See Diagram 13 for more detailed information Final Data Sheet 3 Rev.2.2,2023-06-06 OptiMOSTM3Power-Transistor,100V IPA126N10NM3S Table5Dynamiccharacteristics Parameter Symbol Input capacitance1) Values Unit Note/TestCondition 2500 pF VGS=0V,VDS=50V,f=1MHz 330 - pF VGS=0V,VDS=50V,f=1MHz - 14 - pF VGS=0V,VDS=50V,f=1MHz td(on) - 12 - ns VDD=50V,VGS=10V,ID=35A, RG,ext=1.6Ω Rise time tr - 6 - ns VDD=50V,VGS=10V,ID=35A, RG,ext=1.6Ω Turn-off delay time td(off) - 20 - ns VDD=50V,VGS=10V,ID=35A, RG,ext=1.6Ω Fall time tf - 4 - ns VDD=50V,VGS=10V,ID=35A, RG,ext=1.6Ω Unit Note/TestCondition Min. Typ. Max. Ciss - 1880 Output capacitance Coss - Reverse transfer capacitance Crss Turn-on delay time Table6Gatechargecharacteristics2) Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 9 - nC VDD=50V,ID=35A,VGS=0to10V Gate charge at threshold Qg(th) - 5 - nC VDD=50V,ID=35A,VGS=0to10V Gate to drain charge Qgd - 5 - nC VDD=50V,ID=35A,VGS=0to10V Switching charge Qsw - 9 - nC VDD=50V,ID=35A,VGS=0to10V Gate charge total Qg - 26 35 nC VDD=50V,ID=35A,VGS=0to10V Gate plateau voltage Vplateau - 4.7 - V VDD=50V,ID=35A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 24 - nC VDS=0.1V,VGS=0to10V Output charge Qoss - 35 - nC VDD=50V,VGS=0V Unit Note/TestCondition 1) Table7Reversediode Parameter Symbol Diode continuous forward current Values Min. Typ. Max. IS - - 30 A TC=25°C Diode pulse current IS,pulse - - 140 A TC=25°C Diode forward voltage VSD - 0.9 1.2 V VGS=0V,IF=35A,Tj=25°C Reverse recovery time trr - 58 - ns VR=50V,IF=35A,diF/dt=100A/µs Reverse recovery charge Qrr - 114 - nC VR=50V,IF=35A,diF/dt=100A/µs 1) 2) Defined by design. Not subject to production test. See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.2,2023-06-06 OptiMOSTM3Power-Transistor,100V IPA126N10NM3S 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 35 40 35 30 30 25 ID[A] Ptot[W] 25 20 20 15 15 10 10 5 0 5 0 25 50 75 100 125 150 175 0 200 0 25 50 75 TC[°C] 100 125 150 Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 1 µs 102 101 10 µs ZthJC[K/W] 100 µs 1 ms 101 ID[A] 200 102 10 100 10 ms 10-1 single pulse 0.01 0.02 0.05 0.1 0.2 0.5 100 10-1 DC 10-2 10-2 10-3 175 TC[°C] 10-1 100 101 102 103 10-3 10-6 10-5 10-4 VDS[V] 10-2 10-1 100 101 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 5 Rev.2.2,2023-06-06 OptiMOSTM3Power-Transistor,100V IPA126N10NM3S Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 140 35 8V 120 10 V 6V 30 7V 4.5 V 5V 25 80 20 ID[A] RDS(on)[mΩ] 100 60 5V 6V 15 7V 8V 40 10 10 V 4.5 V 20 0 5 0 1 2 3 4 0 5 0 10 20 30 VDS[V] 40 50 60 70 ID[A] ID=f(VDS),Tj=25°C;parameter:VGS RDS(on)=f(ID),Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.drain-sourceonresistance 35 120 30 100 25 80 20 ID[A] RDS(on)[mΩ] 140 60 40 175 °C 15 10 25 °C 20 5 175 °C 25 °C 0 0 1 2 3 4 5 6 7 VGS[V] 0 2 4 6 8 10 12 14 16 VGS[V] ID=f(VGS),|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 0 RDS(on)=f(VGS),ID=35A;parameter:Tj 6 Rev.2.2,2023-06-06 OptiMOSTM3Power-Transistor,100V IPA126N10NM3S Diagram9:Normalizeddrain-sourceonresistance Diagram10:Typ.gatethresholdvoltage 2.4 3.5 3.0 2.5 1.6 VGS(th)[V] RDS(on)(normalizedto25°C) 2.0 1.2 2.0 450 µA 1.5 45 µA 0.8 1.0 0.4 0.5 0.0 -75 -50 -25 0 25 50 75 0.0 -75 100 125 150 175 200 -50 -25 0 25 Tj[°C] 50 75 100 125 150 175 200 Tj[°C] RDS(on)=f(Tj),ID=35A,VGS=10V VGS(th=f(Tj),VGS=VDS;parameter:ID Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 25 °C 25 °C, max 175 °C 175 °C, max 103 Ciss IF[A] C[pF] 102 Coss 102 101 101 Crss 100 0 20 40 60 80 100 100 0.0 0.4 VDS[V] 1.2 1.6 2.0 2.4 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.8 IF=f(VSD);parameter:Tj 7 Rev.2.2,2023-06-06 OptiMOSTM3Power-Transistor,100V IPA126N10NM3S Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 10 20 V 50 V 80 V 8 25 °C 101 100 °C 6 IAV[A] VGS[V] 150 °C 4 0 10 2 10-1 100 101 102 103 tAV[µs] 0 0 4 8 12 16 20 24 28 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj,start VGS=f(Qgate),ID=35Apulsed,Tj=25°C;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms 109 107 VBR(DSS)[V] 105 103 101 99 97 95 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 8 Rev.2.2,2023-06-06 OptiMOSTM3Power-Transistor,100V IPA126N10NM3S 5PackageOutlines 1 2 3 DIMENSIONS A A1 A2 b b1 b2 b3 b4 c D D1 E e H L L1 øP Q MILLIMETERS MIN. MAX. 4.50 4.90 2.34 2.80 2.42 2.86 0.65 0.90 0.95 1.38 1.20 1.50 0.65 1.38 1.20 1.50 0.40 0.63 15.67 16.15 8.97 9.83 10.00 10.65 2.54 28.70 29.75 12.78 13.75 3.45 2.83 3.00 3.38 3.50 3.15 DOCUMENT NO. Z8B00181328 REVISION 03 ISSUE DATE 23.07.2018 SCALE 5:1 0 1 2 3 4 5mm EUROPEAN PROJECTION Figure1OutlinePG-TO220FullPAK,dimensionsinmm/inches Final Data Sheet 9 Rev.2.2,2023-06-06 OptiMOSTM3Power-Transistor,100V IPA126N10NM3S RevisionHistory IPA126N10NM3S Revision:2023-06-06,Rev.2.2 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2019-07-22 Release of final version 2.1 2019-09-02 Update package outline 2.2 2023-06-06 Update current rating and footnotes Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. 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TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 10 Rev.2.2,2023-06-06