IPB80R290C3A
CoolMOS® Power Transistor
Product Summary
V DS
800
V
R DS(on)max
0.29
Ω
91
nC
Q g,typ
Features
• New revolutionary high voltage technology
• Ultra low gate charge and ultra low effective capacitances
PG-TO263-3-2
• Extreme dv/dt rated
• High peak current capability
• Automotive AEC Q101 qualified
• Green package (RoHS compliant)
CoolMOS C3A designed for:
• DC/DC converters for Automotive Applications
Type
Package
Marking
IPB80R290C3A
PG-TO263-3-2
8R290C3A
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
T C=25 °C
17
T C=100 °C
11
Pulsed drain current1)
I D,pulse
T C=25 °C
51
Avalanche energy, single pulse
E AS
I D=3.4 A, V DD=50 V
670
Avalanche energy, repetitive t AR1),2)
E AR
I D=17 A, V DD=50 V
0.5
Avalanche current, repetitive t AR1),2)
I AR
MOSFET dv /dt ruggedness
dv /dt
Gate source voltage
Unit
A
mJ
17
A
V DS=0…640 V
50
V/ns
V GS
static
±20
V
Power dissipation
P tot
T C=25 °C
227
W
Operating temperature
Tj
-40 ... 150
°C
Storage temperature
T stg
-40 ... 150
Rev. 2.0
page 1
2009-03-24
IPB80R290C3A
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous diode forward current
IS
Diode pulse current1)
I S,pulse
Reverse diode dv /dt 3)
dv /dt
Parameter
Symbol Conditions
Value
Unit
17
T C=25 °C
A
51
4
V/ns
Values
Unit
min.
typ.
max.
-
-
0.55
SMD version, device
on PCB, minimal
footprint
-
-
62
SMD version, device
on PCB, 6 cm2 cooling
area4)
-
35
-
MSL1; 10s
-
-
260
°C
V
Thermal characteristics
Thermal resistance, junction - case
R thJC
R thJA
Thermal resistance, junction ambient
Soldering temperature, reflow
soldering
T sold
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=250 µA
800
-
-
Gate threshold voltage
V GS(th)
V DS=V GS, I D=1.0 mA
2.1
3
3.9
Zero gate voltage drain current
I DSS
V DS=800 V, V GS=0 V,
T j=25 °C
-
-
25
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
-
100
nA
Drain-source on-state resistance
R DS(on)
V GS=10 V, I D=11 A,
T j=25 °C
-
0.25
0.29
Ω
V GS=10 V, I D=11 A,
T j=150 °C
-
0.67
-
f =1 MHz, open drain
-
0.85
-
Gate resistance
Rev. 2.0
RG
page 2
Ω
2009-03-24
IPB80R290C3A
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
2300
-
-
94
-
-
72
-
-
210
-
-
25
-
-
15
-
-
72
-
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
Effective output capacitance, energy
C o(er)
related5)
Effective output capacitance, time
related6)
C o(tr)
Turn-on delay time
t d(on)
V GS=0 V, V DS=100 V,
f =1 MHz
pF
V GS=0 V, V DS=0 V
to 480 V
V DD=400 V,
V GS=0/10 V, I D=17 A,
R G=4.7 Ω,
T j = 125°C
ns
Rise time
tr
Turn-off delay time
t d(off)
Fall time
tf
-
12
-
Gate to source charge
Q gs
-
12
-
Gate to drain charge
Q gd
-
45
-
Gate charge total
Qg
-
88
117
Gate plateau voltage
V plateau
-
5.5
-
V
-
1
1.2
V
-
550
-
ns
-
15
-
µC
-
51
-
A
Gate Charge Characteristics
V DD=640 V, I D=17 A,
V GS=0 to 10 V
nC
Reverse Diode
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
Q rr
Peak reverse recovery current
I rrm
V GS=0 V, I F=I S,
T j=25 °C
V R=400 V, I F=I S,
di F/dt =100 A/µs
1)
Pulse width t p limited by T j,max
2)
Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f.
3)
I SD≤I D, di /dt ≤200A/µs, V DClink = 400V, V peak
