IPB80R290C3AATMA2

IPB80R290C3A CoolMOS® Power Transistor Product Summary V DS 800 V R DS(on)max 0.29 Ω 91 nC Q g,typ Features • New revolutionary high voltage technology • Ultra low gate charge and ultra low effective capacitances PG-TO263-3-2 • Extreme dv/dt rated • High peak current capability • Automotive AEC Q101 qualified • Green package (RoHS compliant) CoolMOS C3A designed for: • DC/DC converters for Automotive Applications Type Package Marking IPB80R290C3A PG-TO263-3-2 8R290C3A Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C 17 T C=100 °C 11 Pulsed drain current1) I D,pulse T C=25 °C 51 Avalanche energy, single pulse E AS I D=3.4 A, V DD=50 V 670 Avalanche energy, repetitive t AR1),2) E AR I D=17 A, V DD=50 V 0.5 Avalanche current, repetitive t AR1),2) I AR MOSFET dv /dt ruggedness dv /dt Gate source voltage Unit A mJ 17 A V DS=0…640 V 50 V/ns V GS static ±20 V Power dissipation P tot T C=25 °C 227 W Operating temperature Tj -40 ... 150 °C Storage temperature T stg -40 ... 150 Rev. 2.0 page 1 2009-03-24 IPB80R290C3A Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous diode forward current IS Diode pulse current1) I S,pulse Reverse diode dv /dt 3) dv /dt Parameter Symbol Conditions Value Unit 17 T C=25 °C A 51 4 V/ns Values Unit min. typ. max. - - 0.55 SMD version, device on PCB, minimal footprint - - 62 SMD version, device on PCB, 6 cm2 cooling area4) - 35 - MSL1; 10s - - 260 °C V Thermal characteristics Thermal resistance, junction - case R thJC R thJA Thermal resistance, junction ambient Soldering temperature, reflow soldering T sold K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250 µA 800 - - Gate threshold voltage V GS(th) V DS=V GS, I D=1.0 mA 2.1 3 3.9 Zero gate voltage drain current I DSS V DS=800 V, V GS=0 V, T j=25 °C - - 25 µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=11 A, T j=25 °C - 0.25 0.29 Ω V GS=10 V, I D=11 A, T j=150 °C - 0.67 - f =1 MHz, open drain - 0.85 - Gate resistance Rev. 2.0 RG page 2 Ω 2009-03-24 IPB80R290C3A Parameter Values Symbol Conditions Unit min. typ. max. - 2300 - - 94 - - 72 - - 210 - - 25 - - 15 - - 72 - Dynamic characteristics Input capacitance C iss Output capacitance C oss Effective output capacitance, energy C o(er) related5) Effective output capacitance, time related6) C o(tr) Turn-on delay time t d(on) V GS=0 V, V DS=100 V, f =1 MHz pF V GS=0 V, V DS=0 V to 480 V V DD=400 V, V GS=0/10 V, I D=17 A, R G=4.7 Ω, T j = 125°C ns Rise time tr Turn-off delay time t d(off) Fall time tf - 12 - Gate to source charge Q gs - 12 - Gate to drain charge Q gd - 45 - Gate charge total Qg - 88 117 Gate plateau voltage V plateau - 5.5 - V - 1 1.2 V - 550 - ns - 15 - µC - 51 - A Gate Charge Characteristics V DD=640 V, I D=17 A, V GS=0 to 10 V nC Reverse Diode Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr Peak reverse recovery current I rrm V GS=0 V, I F=I S, T j=25 °C V R=400 V, I F=I S, di F/dt =100 A/µs 1) Pulse width t p limited by T j,max 2) Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. 3) I SD≤I D, di /dt ≤200A/µs, V DClink = 400V, V peak