IPT012N08N5
MOSFET
OptiMOSTM5Power-Transistor,80V
HSOF
Features
Tab
•Idealforhighfrequencyswitchingandsync.rec.
•ExcellentgatechargexRDS(on)product(FOM)
•Verylowon-resistanceRDS(on)
•N-channel,normallevel
•100%avalanchetested
•Pb-freeplating;RoHScompliant
•QualifiedaccordingtoJEDEC1)fortargetapplications
•Halogen-freeaccordingtoIEC61249-2-21
12
34
56
78
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
80
V
RDS(on),max
1.2
mΩ
ID
400
A
Qoss
208
nC
QG(0V..10V)
178
nC
Type/OrderingCode
Package
IPT012N08N5
PG-HSOF-8
1)
Drain
Tab
Gate
Pin 1
Source
Pin 2-8
Marking
012N08N5
RelatedLinks
-
J-STD20 and JESD22
Final Data Sheet
1
Rev.2.3,2020-10-23
OptiMOSTM5Power-Transistor,80V
IPT012N08N5
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
2
Rev.2.3,2020-10-23
OptiMOSTM5Power-Transistor,80V
IPT012N08N5
1Maximumratings
atTA=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current1)
Values
Unit
Note/TestCondition
400
283
56
A
VGS=10V,TC=25°C
VGS=10V,TC=100°C
VGS=10V,TA=25°C,RthJA=40K/W2)
-
1600
A
TC=25°C
-
-
817
mJ
ID=150A,RGS=25Ω
VGS
-20
-
20
V
-
Power dissipation
Ptot
-
-
375
W
TC=25°C
Operating and storage temperature
Tj,Tstg
-55
-
175
°C
IEC climatic category;
DIN IEC 68-1: 55/175/56
Unit
Note/TestCondition
Min.
Typ.
Max.
ID
-
-
Pulsed drain current3)
ID,pulse
-
Avalanche energy, single pulse4)
EAS
Gate source voltage
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case
Values
Min.
Typ.
Max.
RthJC
-
0.2
0.4
K/W
-
Device on PCB,
minimal footprint
RthJA
-
-
62
K/W
-
Device on PCB,
6 cm² cooling area2)
RthJA
-
-
40
K/W
-
1)
Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature
at25°C.ForhighercasetemperaturepleaserefertoDiagram2.De-ratingwillberequiredbasedontheactual
environmental conditions.
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)
See figure 3 for more detailed information
4)
See figure 13 for more detailed information
Final Data Sheet
3
Rev.2.3,2020-10-23
OptiMOSTM5Power-Transistor,80V
IPT012N08N5
3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,ID=1mA
3.0
3.8
V
VDS=VGS,ID=280µA
-
0.1
10
1
100
µA
VDS=80V,VGS=0V,Tj=25°C
VDS=80V,VGS=0V,Tj=125°C
IGSS
-
10
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
1.0
1.3
1.2
1.7
mΩ
VGS=10V,ID=150A
VGS=6V,ID=75A
Gate resistance1)
RG
-
1.6
2.4
Ω
-
Transconductance
gfs
120
250
-
S
|VDS|>2|ID|RDS(on)max,ID=100A
Unit
Note/TestCondition
Min.
Typ.
Max.
V(BR)DSS
80
-
Gate threshold voltage
VGS(th)
2.2
Zero gate voltage drain current
IDSS
Gate-source leakage current
Table5Dynamiccharacteristics1)
Parameter
Symbol
Input capacitance
Values
Min.
Typ.
Max.
Ciss
-
13000 17000 pF
VGS=0V,VDS=40V,f=1MHz
Output capacitance
Coss
-
2000
2600
pF
VGS=0V,VDS=40V,f=1MHz
Reverse transfer capacitance
Crss
-
86
150
pF
VGS=0V,VDS=40V,f=1MHz
Turn-on delay time
td(on)
-
35
-
ns
VDD=40V,VGS=10V,ID=100A,
RG,ext=1.8Ω
Rise time
tr
-
31
-
ns
VDD=40V,VGS=10V,ID=100A,
RG,ext=1.8Ω
Turn-off delay time
td(off)
-
82
-
ns
VDD=40V,VGS=10V,ID=100A,
RG,ext=1.8Ω
Fall time
tf
-
30
-
ns
VDD=40V,VGS=10V,ID=100A,
RG,ext=1.8Ω
Unit
Note/TestCondition
Table6Gatechargecharacteristics2)
Parameter
Symbol
Gate to source charge
Gate charge at threshold
Values
Min.
Typ.
Max.
Qgs
-
56
-
nC
VDD=40V,ID=100A,VGS=0to10V
Qg(th)
-
38
-
nC
VDD=40V,ID=100A,VGS=0to10V
Gate to drain charge
Qgd
-
37
56
nC
VDD=40V,ID=100A,VGS=0to10V
Switching charge
Qsw
-
56
-
nC
VDD=40V,ID=100A,VGS=0to10V
Gate charge total
Qg
-
178
223
nC
VDD=40V,ID=100A,VGS=0to10V
Gate plateau voltage
Vplateau
-
4.5
-
V
VDD=40V,ID=100A,VGS=0to10V
Gate charge total, sync. FET
Qg(sync)
-
154
-
nC
VDS=0.1V,VGS=0to10V
Qoss
-
208
276
nC
VDD=40V,VGS=0V
1)
1)
1)
Output charge
1)
2)
Defined by design. Not subject to production test.
See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.2.3,2020-10-23
OptiMOSTM5Power-Transistor,80V
IPT012N08N5
Table7Reversediode
Parameter
Symbol
Diode continuous forward current
Diode pulse current
Diode forward voltage
1)
Reverse recovery time
1)
Reverse recovery charge
1)
Values
Unit
Note/TestCondition
269
A
TC=25°C
-
1600
A
TC=25°C
-
0.88
1.2
V
VGS=0V,IF=150A,Tj=25°C
trr
-
106
212
ns
VR=40V,IF=100A,diF/dt=100A/µs
Qrr
-
318
636
nC
VR=40V,IF=100A,diF/dt=100A/µs
Min.
Typ.
Max.
IS
-
-
IS,pulse
-
VSD
Defined by design. Not subject to production test.
Final Data Sheet
5
Rev.2.3,2020-10-23
OptiMOSTM5Power-Transistor,80V
IPT012N08N5
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
Diagram2:Draincurrent
400
500
350
400
300
300
ID[A]
Ptot[W]
250
200
200
150
100
100
50
0
0
25
50
75
100
125
150
0
175
0
25
50
75
TC[°C]
100
125
150
175
200
TC[°C]
Ptot=f(TC)
ID=f(TC);VGS≥10V
Diagram3:Safeoperatingarea
Diagram4:Max.transientthermalimpedance
4
100
10
1 µs
103
10 µs
0.5
10-1
0.2
ID[A]
ZthJC[K/W]
100 µs
102
1
10
1 ms
0.1
0.05
0.02
10
-2
0.01
10 ms
100
single pulse
DC
-1
10
10-1
100
101
102
10-3
10-6
10-5
10-4
VDS[V]
10-2
10-1
100
tp[s]
ID=f(VDS);TC=25°C;D=0;parameter:tp
Final Data Sheet
10-3
ZthJC=f(tp);parameter:D=tp/T
6
Rev.2.3,2020-10-23
OptiMOSTM5Power-Transistor,80V
IPT012N08N5
Diagram5:Typ.outputcharacteristics
Diagram6:Typ.drain-sourceonresistance
800
3.0
10 V
5V
6V
7V
5.5 V
6V
700
2.5
600
2.0
500
RDS(on)[mΩ]
ID[A]
5.5 V
400
300
1.5
7V
10 V
1.0
5V
200
0.5
100
0
0.0
0.5
1.0
1.5
2.0
2.5
0.0
3.0
0
100
200
300
VDS[V]
400
500
600
700
800
ID[A]
ID=f(VDS);Tj=25°C;parameter:VGS
RDS(on)=f(ID);Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics
Diagram8:Typ.forwardtransconductance
600
360
320
500
280
240
gfs[S]
ID[A]
400
300
200
200
160
120
80
100
175 °C
0
0
2
40
25 °C
4
6
8
0
0
VGS[V]
80
120
160
200
ID[A]
ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj
Final Data Sheet
40
gfs=f(ID);Tj=25°C
7
Rev.2.3,2020-10-23
OptiMOSTM5Power-Transistor,80V
IPT012N08N5
Diagram9:Drain-sourceon-stateresistance
Diagram10:Typ.gatethresholdvoltage
2.5
4
2800 µA
2.0
3
max
VGS(th)[V]
RDS(on)[mΩ]
280 µA
1.5
typ
1.0
2
1
0.5
0.0
-60
-20
20
60
100
140
0
-60
180
-20
20
60
Tj[°C]
100
140
180
Tj[°C]
RDS(on)=f(Tj);ID=150A;VGS=10V
VGS(th)=f(Tj);VGS=VDS
Diagram11:Typ.capacitances
Diagram12:Forwardcharacteristicsofreversediode
5
104
10
25 °C
25 °C, max
175 °C
175 °C, max
103
Ciss
Coss
IF[A]
C[pF]
104
3
10
102
102
101
Crss
101
0
20
40
60
100
0.0
0.5
VDS[V]
1.5
2.0
2.5
VSD[V]
C=f(VDS);VGS=0V;f=1MHz
Final Data Sheet
1.0
IF=f(VSD);parameter:Tj
8
Rev.2.3,2020-10-23
OptiMOSTM5Power-Transistor,80V
IPT012N08N5
Diagram13:Avalanchecharacteristics
Diagram14:Typ.gatecharge
3
10
10
9
40 V
8
25 °C
7
2
10
6
IAV[A]
VGS[V]
100 °C
125 °C
60 V
20 V
5
4
1
10
3
2
1
100
100
101
102
103
tAV[µs]
0
0
50
100
150
200
Qgate[nC]
IAS=f(tAV);RGS=25Ω;parameter:Tj(start)
VGS=f(Qgate);ID=100Apulsed;parameter:VDD
Diagram15:Drain-sourcebreakdownvoltage
Diagram Gate charge waveforms
90
VBR(DSS)[V]
85
80
75
-60
-20
20
60
100
140
180
Tj[°C]
VBR(DSS)=f(Tj);ID=1mA
Final Data Sheet
9
Rev.2.3,2020-10-23
OptiMOSTM5Power-Transistor,80V
IPT012N08N5
5PackageOutlines
1) partially covered with Mold Flash
DIM
A
b
b1
b2
c
D
D2
E
E1
E4
E5
e
H
H1
H2
H3
H4
N
K1
L
L1
L2
L4
MILLIMETERS
MIN
MAX
2.20
2.40
0.70
0.90
9.70
9.90
0.42
0.50
0.40
0.60
10.28
10.58
3.30
9.70
10.10
7.50
8.50
9.46
1.20 (BSC)
11.48
6.55
11.88
6.75
INCHES
MIN
0.087
0.028
0.382
0.017
0.016
0.405
0.295
0.335
0.372
0.047 (BSC)
0.452
0.258
2
0
2
4mm
EUROPEAN PROJECTION
0.083
ISSUE DATE
20-02-2014
0.051
REVISION
02
0.028
0.024
1.30
0
SCALE
0.468
0.266
0.063
0.70
0.60
1.00
0.398
0.281
0.141
0.128
8
0.165
2.10
DOCUMENT NO.
Z8B00169619
0.130
0.382
7.15
3.59
3.26
8
4.18
1.60
MAX
0.094
0.035
0.390
0.020
0.024
0.416
0.039
Figure1OutlinePG-HSOF-8,dimensionsinmm/inches
Final Data Sheet
10
Rev.2.3,2020-10-23
OptiMOSTM5Power-Transistor,80V
IPT012N08N5
RevisionHistory
IPT012N08N5
Revision:2020-10-23,Rev.2.3
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.0
2014-12-17
Release of final version
2.1
2015-02-23
Update active area about 0.3%
2.2
2017-03-20
Update condition "T" in " Maximum ratings "
2.3
2020-10-23
Update product current
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Final Data Sheet
11
Rev.2.3,2020-10-23