IPT029N08N5ATMA1

IPT029N08N5 MOSFET OptiMOSTM5Power-Transistor,80V HSOF Features Tab •Idealforhighfrequencyswitchingandsync.rec. •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •N-channel,normallevel •100%avalanchetested •Pb-freeplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplications •Halogen-freeaccordingtoIEC61249-2-21 12 34 56 78 Table1KeyPerformanceParameters Parameter Value Unit VDS 80 V RDS(on),max 2.9 mΩ ID 169 A Qoss 83 nC QG(0V..10V) 70 nC Type/OrderingCode Package IPT029N08N5 PG-HSOF-8 1) Drain Tab Gate Pin 1 Source Pin 2-8 Marking 029N08N5 RelatedLinks - J-STD20 and JESD22 Final Data Sheet 1 Rev.2.0,2016-01-22 OptiMOSTM5Power-Transistor,80V IPT029N08N5 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Final Data Sheet 2 Rev.2.0,2016-01-22 OptiMOSTM5Power-Transistor,80V IPT029N08N5 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current Values Unit Note/TestCondition 169 120 52 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=10V,TA=25°C,RthJA=40K/W1) - 676 A TC=25°C - - 124 mJ ID=150A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 167 W TC=25°C Operating and storage temperature Tj,Tstg -55 - 175 °C IEC climatic category; DIN IEC 68-1: 55/175/56 Unit Note/TestCondition Min. Typ. Max. ID - - Pulsed drain current2) ID,pulse - Avalanche energy, single pulse3) EAS Gate source voltage 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Values Min. Typ. Max. RthJC - - 0.9 K/W - Device on PCB, minimal footprint RthJA - - 62 K/W - Device on PCB, 6 cm² cooling area1) RthJA - - 40 K/W - 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) See Diagram 3 for more detailed information 3) See Diagram 13 for more detailed information Final Data Sheet 3 Rev.2.0,2016-01-22 OptiMOSTM5Power-Transistor,80V IPT029N08N5 3Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 3.0 3.8 V VDS=VGS,ID=108µA - 0.1 10 1 100 µA VDS=80V,VGS=0V,Tj=25°C VDS=80V,VGS=0V,Tj=125°C IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 2.5 3.4 2.9 4.0 mΩ VGS=10V,ID=150A VGS=6V,ID=75A Gate resistance1) RG - 1.5 2.25 Ω - Transconductance gfs 75 150 - S |VDS|>2|ID|RDS(on)max,ID=100A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 80 - Gate threshold voltage VGS(th) 2.2 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics1) Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 4900 6500 pF VGS=0V,VDS=40V,f=1MHz Output capacitance Coss - 790 1100 pF VGS=0V,VDS=40V,f=1MHz Reverse transfer capacitance Crss - 36 63 pF VGS=0V,VDS=40V,f=1MHz Turn-on delay time td(on) - 20 - ns VDD=40V,VGS=10V,ID=100A, RG,ext=1.8Ω Rise time tr - 12 - ns VDD=40V,VGS=10V,ID=100A, RG,ext=1.8Ω Turn-off delay time td(off) - 42 - ns VDD=40V,VGS=10V,ID=100A, RG,ext=1.8Ω Fall time tf - 13 - ns VDD=40V,VGS=10V,ID=100A, RG,ext=1.8Ω Unit Note/TestCondition Table6Gatechargecharacteristics2) Parameter Symbol Gate to source charge Gate charge at threshold Values Min. Typ. Max. Qgs - 24 - nC VDD=40V,ID=100A,VGS=0to10V Qg(th) - 15 - nC VDD=40V,ID=100A,VGS=0to10V Gate to drain charge Qgd - 15 22.8 nC VDD=40V,ID=100A,VGS=0to10V Switching charge Qsw - 24 - nC VDD=40V,ID=100A,VGS=0to10V Gate charge total Qg - 70 87 nC VDD=40V,ID=100A,VGS=0to10V Gate plateau voltage Vplateau - 4.9 - V VDD=40V,ID=100A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 60 - nC VDS=0.1V,VGS=0to10V Qoss - 83 110 nC VDD=40V,VGS=0V 1) 1) 1) Output charge 1) 2) Defined by design. Not subject to production test. See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.0,2016-01-22 OptiMOSTM5Power-Transistor,80V IPT029N08N5 Table7Reversediode Parameter Symbol Diode continuous forward current Diode pulse current Diode forward voltage 1) Reverse recovery time 1) Reverse recovery charge 1) Values Unit Note/TestCondition 139 A TC=25°C - 676 A TC=25°C - 0.92 1.2 V VGS=0V,IF=100A,Tj=25°C trr - 84 168 ns VR=40V,IF=100A,diF/dt=100A/µs Qrr - 175 350 nC VR=40V,IF=100A,diF/dt=100A/µs Min. Typ. Max. IS - - IS,pulse - VSD Defined by design. Not subject to production test. Final Data Sheet 5 Rev.2.0,2016-01-22 OptiMOSTM5Power-Transistor,80V IPT029N08N5 4Electricalcharacteristicsdiagrams Diagram2:Draincurrent 200 200 150 150 ID[A] Ptot[W] Diagram1:Powerdissipation 100 50 0 100 50 0 25 50 75 100 125 150 0 175 0 25 50 75 TC[°C] 100 125 150 Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 200 100 10 1 µs 0.5 10 µs 0.2 102 100 µs 0.1 10-1 0.05 ZthJC[K/W] ID[A] 175 TC[°C] 1 ms 101 10 ms 0.02 0.01 10-2 100 10-1 10-1 DC 100 101 single pulse 102 10-3 10-6 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.0,2016-01-22 OptiMOSTM5Power-Transistor,80V IPT029N08N5 Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 700 6 10 V 600 7V 5 5V 500 ID[A] RDS(on)[mΩ] 400 300 6V 6V 5.5 V 7V 4 3 10 V 200 5.5 V 2 5V 100 0 0.0 0.5 1.0 1.5 2.0 2.5 1 3.0 0 100 200 300 VDS[V] 400 RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 600 240 500 200 400 160 gfs[S] ID[A] ID=f(VDS);Tj=25°C;parameter:VGS 300 80 100 40 2 4 6 8 0 0 VGS[V] 40 80 120 160 200 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 700 25 °C 175 °C 0 600 120 200 0 500 ID[A] gfs=f(ID);Tj=25°C 7 Rev.2.0,2016-01-22 OptiMOSTM5Power-Transistor,80V IPT029N08N5 Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 6 4 5 1080 µA 3 108 µA max 3 VGS(th)[V] RDS(on)[mΩ] 4 typ 2 2 1 1 0 -60 -20 20 60 100 140 0 -60 180 -20 20 Tj[°C] 60 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=150A;VGS=10V VGS(th)=f(Tj);VGS=VDS Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 25 °C 175 °C 25 °C max 175°C max Ciss 103 102 IF[A] C[pF] Coss 102 101 Crss 101 0 20 40 60 100 0.0 0.5 VDS[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 1.0 1.5 2.0 VSD[V] IF=f(VSD);parameter:Tj 8 Rev.2.0,2016-01-22 OptiMOSTM5Power-Transistor,80V IPT029N08N5 Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 3 10 10 9 40 V 8 7 102 6 125 °C VGS[V] IAV[A] 25 °C 100 °C 60 V 20 V 5 4 1 10 3 2 1 100 100 101 102 103 0 0 tAV[µs] 20 40 60 80 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=100Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Gate charge waveforms 90 VBR(DSS)[V] 85 80 75 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.0,2016-01-22 OptiMOSTM5Power-Transistor,80V IPT029N08N5 5PackageOutlines 1) partially covered with Mold Flash DIM A b b1 b2 c D D2 E E1 E4 E5 e H H1 H2 H3 H4 N K1 L L1 L2 L4 MILLIMETERS MIN MAX 2.20 2.40 0.70 0.90 9.70 9.90 0.42 0.50 0.40 0.60 10.28 10.58 3.30 9.70 10.10 7.50 8.50 9.46 1.20 (BSC) 11.48 6.55 11.88 6.75 INCHES MIN 0.087 0.028 0.382 0.017 0.016 0.405 0.295 0.335 0.372 0.047 (BSC) 0.452 0.258 2 0 2 4mm EUROPEAN PROJECTION 0.083 ISSUE DATE 20-02-2014 0.051 REVISION 02 0.028 0.024 1.30 0 SCALE 0.468 0.266 0.063 0.70 0.60 1.00 0.398 0.281 0.141 0.128 8 0.165 2.10 DOCUMENT NO. Z8B00169619 0.130 0.382 7.15 3.59 3.26 8 4.18 1.60 MAX 0.094 0.035 0.390 0.020 0.024 0.416 0.039 Figure1OutlinePG-HSOF-8 Final Data Sheet 10 Rev.2.0,2016-01-22 OptiMOSTM5Power-Transistor,80V IPT029N08N5 RevisionHistory IPT029N08N5 Revision:2016-01-22,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2016-01-22 Release of final version TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. 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Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 11 Rev.2.0,2016-01-22