IQE006NE2LM5
MOSFET
OptiMOSTM5Power-Transistor,25V
PG-TSON-8-4
Features
1
•Verylowon-resistanceRDS(on)@VGS=4.5V
•100%avalanchetested
•Superiorthermalresistance
•N-channel
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
8
7
6
2
3
4
5
Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications
Drain
Pin 5-8
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
25
V
RDS(on),max
0.65
mΩ
ID
298
A
Qoss
41
nC
QG(0V..4.5V)
29
nC
Gate
Pin 4
Source
Pin 1-3
Type/OrderingCode
Package
Marking
RelatedLinks
IQE006NE2LM5
PG-TSON-8-4
006E2L5
-
Final Data Sheet
1
Rev.2.1,2020-03-16
OptiMOSTM5Power-Transistor,25V
IQE006NE2LM5
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Final Data Sheet
2
Rev.2.1,2020-03-16
OptiMOSTM5Power-Transistor,25V
IQE006NE2LM5
1Maximumratings
atTA=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Values
Unit
Note/TestCondition
298
188
41
A
VGS=10V,TC=25°C
VGS=10V,TC=100°C
VGS=4.5V,TA=25°C,
RTHJA=60°C/W2)
-
1192
A
TA=25°C
-
-
140
mJ
ID=20A,RGS=25Ω
VGS
-16
-
16
V
-
Power dissipation
Ptot
-
-
89
2.1
W
TC=25°C
TA=25°C,RTHJA=60°C/W2)
Operating and storage temperature
Tj,Tstg
-55
-
150
°C
IEC climatic category; DIN IEC 68-1:
55/150/56
Unit
Note/TestCondition
Min.
Typ.
Max.
ID
-
-
ID,pulse
-
Avalanche energy, single pulse
EAS
Gate source voltage
1)
Continuous drain current
Pulsed drain current3)
4)
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case
Device on PCB,
6 cm² cooling area
Values
Min.
Typ.
Max.
RthJC
-
-
1.4
°C/W -
RthJA
-
-
60
°C/W -
1)
Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature
at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual
environmental conditions.
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)
See Diagram 3 for more detailed information
4)
See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.2.1,2020-03-16
OptiMOSTM5Power-Transistor,25V
IQE006NE2LM5
3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,ID=1mA
1.6
2
V
VDS=VGS,ID=250µA
-
0.1
10
1
100
µA
VDS=20V,VGS=0V,Tj=25°C
VDS=20V,VGS=0V,Tj=125°C
IGSS
-
10
100
nA
VGS=16V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
0.50
0.65
0.65
0.80
mΩ
VGS=10V,ID=20A
VGS=4.5V,ID=20A
Gate resistance1)
RG
-
0.7
1.2
Ω
-
Transconductance
gfs
-
220
-
S
|VDS|≥2|ID|RDS(on)max,ID=20A
Unit
Note/TestCondition
Min.
Typ.
Max.
V(BR)DSS
25
-
Gate threshold voltage
VGS(th)
1.2
Zero gate voltage drain current
IDSS
Gate-source leakage current
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance1)
Values
Min.
Typ.
Max.
Ciss
-
4100
5453
pF
VGS=0V,VDS=12V,f=1MHz
Coss
-
1700
2261
pF
VGS=0V,VDS=12V,f=1MHz
Reverse transfer capacitance
Crss
-
130
195
pF
VGS=0V,VDS=12V,f=1MHz
Turn-on delay time
td(on)
-
5.3
-
ns
VDD=12V,VGS=4.5V,ID=20A,
RG,ext=1.6Ω
Rise time
tr
-
2.6
-
ns
VDD=12V,VGS=4.5V,ID=20A,
RG,ext=1.6Ω
Turn-off delay time
td(off)
-
27.0
-
ns
VDD=12V,VGS=4.5V,ID=20A,
RG,ext=1.6Ω
Fall time
tf
-
5.3
-
ns
VDD=12V,VGS=4.5V,ID=20A,
RG,ext=1.6Ω
Unit
Note/TestCondition
Output capacitance1)
1)
Table6Gatechargecharacteristics2)
Parameter
Symbol
Gate to source charge
Gate charge at threshold
Values
Min.
Typ.
Max.
Qgs
-
9.2
-
nC
VDD=12V,ID=20A,VGS=0to4.5V
Qg(th)
-
5.8
-
nC
VDD=12V,ID=20A,VGS=0to4.5V
Gate to drain charge
Qgd
-
5.6
8.4
nC
VDD=12V,ID=20A,VGS=0to4.5V
Switching charge
Qsw
-
9.0
-
nC
VDD=12V,ID=20A,VGS=0to4.5V
Gate charge total
Qg
-
28.5
37.9
nC
VDD=12V,ID=20A,VGS=0to4.5V
Gate plateau voltage
Vplateau
-
2.2
-
V
VDD=12V,ID=20A,VGS=0to4.5V
Gate charge total1)
Qg
-
61.7
82.1
nC
VDD=12V,ID=20A,VGS=0to10V
Gate charge total, sync. FET
Qg(sync)
-
60.4
-
nC
VDS=0.1V,VGS=0to10V
Output charge
Qoss
-
41.3
-
nC
VDD=12V,VGS=0V
1)
1)
1)
2)
Defined by design. Not subject to production test.
See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.2.1,2020-03-16
OptiMOSTM5Power-Transistor,25V
IQE006NE2LM5
Table7Reversediode
Parameter
Symbol
Diode continuous forward current
Values
Unit
Note/TestCondition
83
A
TC=25°C
-
1192
A
TC=25°C
-
0.75
1
V
VGS=0V,IF=20A,Tj=25°C
-
25
-
nC
VR=12V,IF=20A,diF/dt=100A/µs
Min.
Typ.
Max.
IS
-
-
Diode pulse current
IS,pulse
-
Diode forward voltage
VSD
Reverse recovery charge
Qrr
Final Data Sheet
5
Rev.2.1,2020-03-16
OptiMOSTM5Power-Transistor,25V
IQE006NE2LM5
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
Diagram2:Draincurrent
100
350
300
80
250
60
ID[A]
Ptot[W]
200
150
40
100
20
50
0
0
20
40
60
80
100
120
140
0
160
0
20
40
60
TC[°C]
80
100
120
Ptot=f(TC)
ID=f(TC);VGS≥10V
Diagram3:Safeoperatingarea
Diagram4:Max.transientthermalimpedance
4
160
101
10
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
103
1 µs
10 µs
102
140
TC[°C]
10 ms
100
ZthJC[K/W]
ID[A]
100 µs
101
1 ms
100
10-1
DC
10-1
10-2
10-1
100
101
102
10-2
10-5
10-4
VDS[V]
10-2
10-1
100
tp[s]
ID=f(VDS);TC=25°C;D=0;parameter:tp
Final Data Sheet
10-3
ZthJC=f(tp);parameter:D=tp/T
6
Rev.2.1,2020-03-16
OptiMOSTM5Power-Transistor,25V
IQE006NE2LM5
Diagram5:Typ.outputcharacteristics
Diagram6:Typ.drain-sourceonresistance
1200
1.50
3V
10 V
2.8 V
3.5 V
5V
1000
1.25
4.5 V
4V
1.00
600
3V
RDS(on)[mΩ]
ID[A]
800
400
3.5 V
4V
0.75
4.5 V
5V
0.50
10 V
2.8 V
200
0
0.25
0.0
0.5
1.0
1.5
2.0
2.5
0.00
3.0
0
100
200
300
VDS[V]
400
ID=f(VDS),Tj=25°C;parameter:VGS
RDS(on)=f(ID),Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics
Diagram8:Typ.drain-sourceonresistance
1200
1.50
1000
1.25
800
1.00
RDS(on)[mΩ]
ID[A]
500
600
ID[A]
600
150 °C
0.75
400
0.50
200
0.25
25 °C
150 °C
25 °C
0
0
1
2
3
4
5
VGS[V]
0
2
4
6
8
10
VGS[V]
ID=f(VGS),|VDS|>2|ID|RDS(on)max;parameter:Tj
Final Data Sheet
0.00
RDS(on)=f(VGS),ID=20A;parameter:Tj
7
Rev.2.1,2020-03-16
OptiMOSTM5Power-Transistor,25V
IQE006NE2LM5
Diagram10:Typ.gatethresholdvoltage
1.6
2.00
1.4
1.75
1.2
1.50
1.0
1.25
2500 µA
VGS(th)[V]
RDS(on)(normalizedto25°C)
Diagram9:Normalizeddrain-sourceonresistance
0.8
1.00
0.6
0.75
0.4
0.50
0.2
0.25
0.0
-80
-40
0
40
80
120
0.00
-80
160
250 µA
-40
0
Tj[°C]
40
80
120
160
Tj[°C]
RDS(on)=f(Tj),ID=20A,VGS=10V
VGS(th=f(Tj),VGS=VDS;parameter:ID
Diagram11:Typ.capacitances
Diagram12:Forwardcharacteristicsofreversediode
4
104
10
25 °C
25 °C, max
150 °C
150 °C, max
Ciss
Coss
103
IF[A]
C[pF]
103
102
102
Crss
101
0
5
10
15
20
25
101
0.00
0.25
VDS[V]
0.75
1.00
1.25
1.50
VSD[V]
C=f(VDS);VGS=0V;f=1MHz
Final Data Sheet
0.50
IF=f(VSD);parameter:Tj
8
Rev.2.1,2020-03-16
OptiMOSTM5Power-Transistor,25V
IQE006NE2LM5
Diagram13:Avalanchecharacteristics
Diagram14:Typ.gatecharge
2
10
10
5V
12 V
20 V
8
VGS[V]
IAV[A]
6
25 °C
101
100 °C
4
2
125 °C
100
100
101
102
103
tAV[µs]
0
0
10
20
30
40
50
60
70
Qgate[nC]
IAS=f(tAV);RGS=25Ω;parameter:Tj,start
VGS=f(Qgate),ID=20Apulsed,Tj=25°C;parameter:VDD
Diagram15:Drain-sourcebreakdownvoltage
Diagram Gate charge waveforms
28
27
VBR(DSS)[V]
26
25
24
23
-80
-40
0
40
80
120
160
Tj[°C]
VBR(DSS)=f(Tj);ID=1mA
Final Data Sheet
9
Rev.2.1,2020-03-16
OptiMOSTM5Power-Transistor,25V
IQE006NE2LM5
5PackageOutlines
DIMENSION
A
A1
b
c
D
D1
E
e
L
L1
L2
L3
L4
L5
L6
MILLIMETERS
MIN.
MAX.
1.10
0.05
0.20
0.40
0.20
3.30
2.31
2.51
3.30
0.65
0.35
0.55
0.10
0.30
0.40
0.60
1.35
1.55
0.26
0.46
0.84
1.04
0.77
0.97
DOCUMENT NO.
Z8B00198723
REVISION
01
SCALE 10:1
0
2mm
1
EUROPEAN PROJECTION
ISSUE DATE
06.11.2019
Figure1OutlinePG-TSON-8-4,dimensionsinmm
Final Data Sheet
10
Rev.2.1,2020-03-16
OptiMOSTM5Power-Transistor,25V
IQE006NE2LM5
Pin1 Marking
8
4
3.6
All dimensions are in units mm
The drawing is in compliance with ISO 128-30, Projection Method 1 [
3.6
12
]
0.3
1.2
Figure2OutlineTape(PG-TSON-8-4)
Final Data Sheet
11
Rev.2.1,2020-03-16
OptiMOSTM5Power-Transistor,25V
IQE006NE2LM5
1.23
0.975
0.35
7x
1.15
0.615
0.22
2x
0.4
1.59
2x
1.06
2x
0.35
Pin 1
0.372
0.65
6x
1.65
1.01
0.45
2x
0.35
2x
0.05
0.53
0.43
0.35
4x
1.1
4x
0.54
3x
0.65
6x
1.01
1.605
1.14
0.675
Pin 1
1.235
1.675
1.015
0.655
0.8
0.45
0.595
1.225
1.1
0.3
9x
0.08
0.975
copper
solder mask
stencil apertures
All dimensions are in units mm
Figure3OutlineBoardpad(PG-TSON-8-4)
Final Data Sheet
12
Rev.2.1,2020-03-16
OptiMOSTM5Power-Transistor,25V
IQE006NE2LM5
RevisionHistory
IQE006NE2LM5
Revision:2020-03-16,Rev.2.1
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.0
2019-12-05
Release of final version
2.1
2020-03-16
Update footnotes
Trademarks
Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners.
WeListentoYourComments
Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously
improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to:
erratum@infineon.com
Publishedby
InfineonTechnologiesAG
81726München,Germany
©2020InfineonTechnologiesAG
AllRightsReserved.
LegalDisclaimer
Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics
(“Beschaffenheitsgarantie”).
Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe
product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation
warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.
Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis
documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe
productofInfineonTechnologiesincustomer’sapplications.
Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s
technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct
informationgiveninthisdocumentwithrespecttosuchapplication.
Information
Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon
TechnologiesOffice(www.infineon.com).
Warnings
Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare
intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.
Final Data Sheet
13
Rev.2.1,2020-03-16