IQE046N08LM5ATMA1

IQE046N08LM5 MOSFET OptiMOSTM5Power-Transistor,80V PG-TSON-8 5 Features •OptimizedforhighperformanceSMPS,e.g.synchronousrectification •N-channel,logiclevel •Verylowon-resistanceRDS(on) •Superiorthermalresistance •100%avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 4 3 6 2 7 8 1 Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Drain Pin 5-8 Table1KeyPerformanceParameters Parameter Value Unit VDS 80 V RDS(on),max@10V 4.6 mΩ RDS(on),max@4.5V 5.9 mΩ ID 99 A Qoss 39 nC QG(0V...4.5V) 19 nC Gate Pin 4 Source Pin 1-3 Type/OrderingCode Package Marking RelatedLinks IQE046N08LM5 PG-TSON-8 046N8L5 - Final Data Sheet 1 Rev.2.0,2023-01-12 OptiMOSTM5Power-Transistor,80V IQE046N08LM5 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Final Data Sheet 2 Rev.2.0,2023-01-12 OptiMOSTM5Power-Transistor,80V IQE046N08LM5 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Unit Note/TestCondition 99 70 62 15.6 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=4.5V,TC=100°C VGS=10V,TA=25°C,RthJA=60°C/W2) - 396 A TA=25°C - - 170 mJ ID=20A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 100 2.5 W TC=25°C TA=25°C,RthJA=60°C/W2) Operating and storage temperature Tj,Tstg -55 - 175 °C - Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche energy, single pulse EAS Gate source voltage 1) Continuous drain current Pulsed drain current3) 4) 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Values Min. Typ. Max. RthJC - 0.9 1.5 °C/W - Thermal resistance, junction - ambient, RthJA 6 cm² cooling area2) - - 60 °C/W - 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual environmental conditions. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See Diagram 3 for more detailed information 4) See Diagram 13 for more detailed information Final Data Sheet 3 Rev.2.0,2023-01-12 OptiMOSTM5Power-Transistor,80V IQE046N08LM5 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 1.7 2.3 V VDS=VGS,ID=47µA - 0.1 10 1 100 µA VDS=80V,VGS=0V,Tj=25°C VDS=80V,VGS=0V,Tj=125°C IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 4.0 5.2 4.6 5.9 mΩ VGS=10V,ID=20A VGS=4.5V,ID=10A Gate resistance RG - 0.6 0.9 Ω - gfs - 62 - S |VDS|≥2|ID|RDS(on)max,ID=20A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 80 - Gate threshold voltage VGS(th) 1.1 Zero gate voltage drain current IDSS Gate-source leakage current 1) Transconductance Table5Dynamiccharacteristics Parameter Symbol Input capacitance1) Values Min. Typ. Max. Ciss - 2500 3250 pF VGS=0V,VDS=40V,f=1MHz Coss - 390 507 pF VGS=0V,VDS=40V,f=1MHz Reverse transfer capacitance Crss - 26 47 pF VGS=0V,VDS=40V,f=1MHz Turn-on delay time td(on) - 5.2 - ns VDD=40V,VGS=10V,ID=20A, RG,ext=1.6Ω Rise time tr - 2.6 - ns VDD=40V,VGS=10V,ID=20A, RG,ext=1.6Ω Turn-off delay time td(off) - 18 - ns VDD=40V,VGS=10V,ID=20A, RG,ext=1.6Ω Fall time tf - 4.4 - ns VDD=40V,VGS=10V,ID=20A, RG,ext=1.6Ω Unit Note/TestCondition Output capacitance1) 1) Table6Gatechargecharacteristics2) Parameter Symbol Gate to source charge Gate charge at threshold Values Min. Typ. Max. Qgs - 7 - nC VDD=40V,ID=20A,VGS=0to4.5V Qg(th) - 4.3 - nC VDD=40V,ID=20A,VGS=0to4.5V Gate to drain charge Qgd - 6.4 9.6 nC VDD=40V,ID=20A,VGS=0to4.5V Switching charge Qsw - 9.1 - nC VDD=40V,ID=20A,VGS=0to4.5V Gate charge total Qg - 19 24 nC VDD=40V,ID=20A,VGS=0to4.5V Gate plateau voltage Vplateau - 2.8 - V VDD=40V,ID=20A,VGS=0to4.5V Gate charge total Qg - 38 - nC VDD=40V,ID=20A,VGS=0to10V Qoss - 39 51 nC VDS=40V,VGS=0V 1) 1) 1) Output charge 1) 2) Defined by design. Not subject to production test. See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.0,2023-01-12 OptiMOSTM5Power-Transistor,80V IQE046N08LM5 Table7Reversediode Parameter Symbol Diode continuous forward current Diode pulse current Diode forward voltage 1) Reverse recovery time 1) Reverse recovery charge 1) Reverse recovery time 1) Reverse recovery charge 1) Values Unit Note/TestCondition 83 A TC=25°C - 396 A TC=25°C - 0.83 1.0 V VGS=0V,IF=20A,Tj=25°C trr - 32 64 ns VR=40V,IF=20A,diF/dt=100A/µs Qrr - 26 52 nC VR=40V,IF=20A,diF/dt=100A/µs trr - 18 36 ns VR=40V,IF=20A,diF/dt=1000A/µs Qrr - 129 258 nC VR=40V,IF=20A,diF/dt=1000A/µs Min. Typ. Max. IS - - IS,pulse - VSD Defined by design. Not subject to production test. Final Data Sheet 5 Rev.2.0,2023-01-12 OptiMOSTM5Power-Transistor,80V IQE046N08LM5 4Electricalcharacteristicsdiagrams Diagram2:Draincurrent 120 120 100 100 80 80 ID[A] Ptot[W] Diagram1:Powerdissipation 60 60 40 40 20 20 0 0 25 50 75 100 125 150 175 0 200 0 25 50 75 TC[°C] 100 125 150 175 200 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 102 10 1 µs 10 µs 102 101 single pulse 0.01 0.02 0.05 0.1 0.2 0.5 100 µs ZthJC[K/W] ID[A] 101 1 ms DC 100 100 10-1 10 ms 10-1 10-2 10-2 10-1 100 101 102 10-3 10-6 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.0,2023-01-12 OptiMOSTM5Power-Transistor,80V IQE046N08LM5 Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 400 12 10 V 2.8 V 5V 350 10 3V 4V 3.5 V 300 8 4.5 V RDS(on)[mΩ] ID[A] 250 200 150 4V 100 3.5 V 50 3V 4.5 V 6 5V 4 10 V 2 0 2.8 V 0 1 2 3 4 0 5 0 25 50 75 VDS[V] 100 125 150 175 200 ID[A] ID=f(VDS),Tj=25°C;parameter:VGS RDS(on)=f(ID),Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.drain-sourceonresistance 400 12 350 10 300 25 °C 8 175 °C RDS(on)[mΩ] ID[A] 250 175 °C 200 150 6 4 25 °C 100 2 50 0 0 1 2 3 4 5 6 VGS[V] 0 2 4 6 8 10 12 14 16 VGS[V] ID=f(VGS),|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 0 RDS(on)=f(VGS),ID=20A;parameter:Tj 7 Rev.2.0,2023-01-12 OptiMOSTM5Power-Transistor,80V IQE046N08LM5 Diagram10:Typ.gatethresholdvoltage 2.4 2.4 2.0 2.0 1.6 1.6 VGS(th)[V] RDS(on)(normalizedto25°C) Diagram9:Normalizeddrain-sourceonresistance 1.2 1.2 47 µA 0.8 0.8 0.4 0.4 0.0 -75 -50 -25 0 25 50 75 470 µA 0.0 -75 100 125 150 175 200 -50 -25 0 25 Tj[°C] 50 75 100 125 150 175 200 Tj[°C] RDS(on)=f(Tj),ID=20A,VGS=10V VGS(th=f(Tj),VGS=VDS;parameter:ID Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 25 °C 25 °C, max 175 °C 175 °C, max Ciss 3 102 IF[A] C[pF] 10 Coss 102 101 Crss 1 10 0 10 20 30 40 50 60 70 80 100 0.0 0.4 VDS[V] 1.2 1.6 2.0 2.4 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.8 IF=f(VSD);parameter:Tj 8 Rev.2.0,2023-01-12 OptiMOSTM5Power-Transistor,80V IQE046N08LM5 Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 10 16 V 40 V 64 V 8 101 25 °C 6 VGS[V] IAV[A] 100 °C 150 °C 4 0 10 2 10-1 100 101 102 103 tAV[µs] 0 0 5 10 15 20 25 30 35 40 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj,start VGS=f(Qgate),ID=20Apulsed,Tj=25°C;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms 88 86 VBR(DSS)[V] 84 82 80 78 76 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.0,2023-01-12 OptiMOSTM5Power-Transistor,80V IQE046N08LM5 5PackageOutlines DIMENSION A A1 b c D D1 E e L L1 L2 L3 L4 L5 L6 MILLIMETERS MIN. MAX. 1.10 0.05 0.20 0.40 0.20 3.30 2.31 2.51 3.30 0.65 0.35 0.55 0.10 0.30 0.40 0.60 1.35 1.55 0.26 0.46 0.84 1.04 0.77 0.97 DOCUMENT NO. Z8B00198723 REVISION 01 SCALE 10:1 0 2mm 1 EUROPEAN PROJECTION ISSUE DATE 06.11.2019 Figure1OutlinePG-TSON-8,dimensionsinmm Final Data Sheet 10 Rev.2.0,2023-01-12 OptiMOSTM5Power-Transistor,80V IQE046N08LM5 RevisionHistory IQE046N08LM5 Revision:2023-01-12,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2023-01-12 Release of final version Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2023InfineonTechnologiesAG AllRightsReserved. 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Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 11 Rev.2.0,2023-01-12 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Infineon: IQE046N08LM5ATMA1