IRF150P220XKMA1

IRF150P220 MOSFET StrongIRFETª PG-TO247-3 Features •VerylowRDS(on) •ExcellentgatechargexRDS(on)(FOM) •OptimizedQrr •175°Coperatingtemperature •ProductvalidationaccordingtoJEDECstandard •Optimizedforbroadestavailabilityfromdistributionpartners 1 2 3 Benefits •Reducedconductionlosses •Idealforhighswitchingfrequency •Lowerovershootvoltage •Increasedreliabilityversus150°Cratedparts •Halogen-freeaccordingtoIEC61249-2-21 Drain Pin 2 Gate Pin 1 Table1KeyPerformanceParameters Parameter Value Unit VDS 150 V RDS(on),typ 2.3 mΩ RDS(on),max 2.7 mΩ ID(SiliconLimited) 316 A ID(PackageLimited) 203 A QG(0V..10V) 160 nC Type/OrderingCode Package IRF150P220 PG-TO247-3 Final Data Sheet Source Pin 3 Marking IRF150P220 1 RelatedLinks - Rev.2.1,2020-02-03 StrongIRFETª IRF150P220 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Final Data Sheet 2 Rev.2.1,2020-02-03 StrongIRFETª IRF150P220 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Unit Note/TestCondition 203 316 224 A VGS=10V,TC=25°C VGS=10V,TC=25°C(siliconlimited) VGS=10V,TC=100°C(silicon limited)1) - 812 A TC=25°C - - 834 mJ ID=100A,RGS=50Ω VGS -20 - 20 V - Power dissipation Ptot - - 556 3.8 W TC=25°C TA=25°C,RTHJA=40°C/W3) Operating and storage temperature Tj,Tstg -55 - 175 °C IEC climatic category; DIN IEC 68-1: 55/175/56 Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche energy, single pulse EAS Gate source voltage Continuous drain current Pulsed drain current1) 2) 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case 4) Values Min. Typ. Max. RthJC - - 0.27 °C/W - Thermal resistance, junction -Ambient RthJA - - 40 °C/W - Case-to-Sink, Flat Greased Surface RthCS - 0.24 - °C/W - 1) See Diagram 3 for more detailed information See Diagram 13 for more detailed information 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 4) RthJC is measured at TJ approximately 90°C. 2) Final Data Sheet 3 Rev.2.1,2020-02-03 StrongIRFETª IRF150P220 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage V(BR)DSS Breakdown voltage temperature coefficient Values Unit Note/TestCondition - V VGS=0V,ID=1mA 50 - mV/°C ID=2mA,referencedto25°C 3 - 4.6 V VDS=VGS,ID=265µA IDSS - - 1 100 µA VDS=120V,VGS=0V,Tj=25°C VDS=120V,VGS=0V,Tj=125°C Gate-source leakage current IGSS - - 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 2.3 2.7 mΩ VGS=10V,ID=100A Gate resistance RG - 0.5 - Ω - Transconductance gfs - 200 - S |VDS|≥2|ID|RDS(on)max,ID=100A Unit Note/TestCondition Min. Typ. Max. 150 - dV(BR)DSS/dTj - Gate threshold voltage VGS(th) Zero gate voltage drain current 1) Table5Dynamiccharacteristics Parameter Symbol Values Min. Typ. Ciss - 12000 - pF VGS=0V,VDS=75V,f=1MHz Coss - 3000 - pF VGS=0V,VDS=75V,f=1MHz Reverse transfer capacitance Crss - 65 - pF VGS=0V,VDS=75V,f=1MHz Turn-on delay time td(on) - 33 - ns VDD=75V,VGS=10V,ID=100A, RG,ext=2.7Ω Rise time tr - 100 - ns VDD=75V,VGS=10V,ID=100A, RG,ext=2.7Ω Turn-off delay time td(off) - 50 - ns VDD=75V,VGS=10V,ID=100A, RG,ext=2.7Ω Fall time tf - 85 - ns VDD=75V,VGS=10V,ID=100A, RG,ext=2.7Ω Unit Note/TestCondition Input capacitance1) 1) Output capacitance 1) Max. Table6Gatechargecharacteristics2) Parameter Symbol Gate to source charge Gate charge at threshold Values Min. Typ. Max. Qgs - 65 - nC VDD=75V,ID=100A,VGS=0to10V Qg(th) - 46 - nC VDD=75V,ID=100A,VGS=0to10V Gate to drain charge Qgd - 32 - nC VDD=75V,ID=100A,VGS=0to10V Switching charge Qsw - 51 - nC VDD=75V,ID=100A,VGS=0to10V Gate charge total Qg - 160 200 nC VDD=75V,ID=100A,VGS=0to10V Gate plateau voltage Vplateau - 5.4 - V VDD=75V,ID=100A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 128 - nC VDS=0.1V,VGS=0to10V Qoss - 451 - nC VDD=75V,VGS=0V 1) 1) 2) Output charge 1) 2) Defined by design. Not subject to production test. See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.1,2020-02-03 StrongIRFETª IRF150P220 Table7Reversediode Parameter Symbol Diode continuous forward current Diode pulse current Diode forward voltage 1) Reverse recovery time 1) Reverse recovery charge 1) Values Unit Note/TestCondition 203 A TC=25°C - 812 A TC=25°C - - 1.1 V VGS=0V,IF=100A,Tj=25°C trr - 110 - ns VR=128V,IF=100A,diF/dt=100A/µs Qrr - 250 - nC VR=128V,IF=100A,diF/dt=100A/µs Min. Typ. Max. IS - - IS,pulse - VSD Defined by design. Not subject to production test. Final Data Sheet 5 Rev.2.1,2020-02-03 StrongIRFETª IRF150P220 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 600 400 package limit silicon limit 350 500 300 400 ID[A] Ptot[W] 250 300 200 150 200 100 100 50 0 0 25 50 75 100 125 150 0 175 0 25 50 TC[°C] 75 100 125 150 175 100 101 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 101 10 10 µs 100 µs 100 102 1 ms single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10-1 ZthJC[K/W] 101 ID[A] 10 ms 100 10-2 DC 10-3 10-1 10-2 10-4 10-1 100 101 102 103 10-5 10-6 10-5 10-4 VDS[V] 10-2 10-1 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.1,2020-02-03 StrongIRFETª IRF150P220 Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 850 7 5V 5.5 V 6V 7V 8V 10 V 12 V 765 680 6 7V 5 595 RDS(on)[mΩ] ID[A] 510 425 340 255 6V 4 8V 3 10 V 12 V 2 170 1 85 0 0 1 2 3 4 0 5 0 75 150 225 300 375 450 525 600 675 750 825 VDS[V] ID[A] ID=f(VDS),Tj=25°C;parameter:VGS RDS(on)=f(ID),Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.drain-sourceonresistance 850 10 765 680 8 595 RDS(on)[mΩ] ID[A] 510 425 340 6 4 125 °C 255 170 2 85 0 175 °C 0 2 25 °C 4 6 8 10 VGS[V] 0 2 4 6 8 10 12 14 16 18 20 VGS[V] ID=f(VGS),|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 25 °C RDS(on)=f(VGS),ID=100A;parameter:Tj 7 Rev.2.1,2020-02-03 StrongIRFETª IRF150P220 Diagram10:Typ.gatethresholdvoltage 2.4 5 2.0 4 2650 µA 1.6 3 VGS(th)[V] RDS(on)(normalizedto25°C) Diagram9:Normalizeddrain-sourceonresistance 1.2 0.8 265 µA 2 1 0.4 -75 -25 25 75 125 0 -75 175 -25 25 Tj[°C] 75 125 175 Tj[°C] RDS(on)=f(Tj),ID=100A,VGS=10V VGS(th=f(Tj),VGS=VDS;parameter:ID Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 5 103 10 25 °C 175 °C Ciss 104 Coss IF[A] C[pF] 102 103 101 102 Crss 101 0 25 50 75 100 125 150 100 0.2 0.4 0.6 VDS[V] 1.0 1.2 1.4 1.6 1.8 2.0 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.8 IF=f(VSD);parameter:Tj 8 Rev.2.1,2020-02-03 StrongIRFETª IRF150P220 Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 3 10 14 30 V 75 V 120 V 12 102 10 25 °C VGS[V] IAV[A] 8 100 °C 1 10 6 150 °C 4 100 2 10-1 10-1 100 101 102 103 tAV[µs] 0 0 50 100 150 200 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj,start VGS=f(Qgate),ID=100Apulsed,Tj=25°C;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms 173 171 169 VBR(DSS)[V] 167 165 163 161 159 157 155 -75 -25 25 75 125 175 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.1,2020-02-03 StrongIRFETª IRF150P220 5PackageOutlines Figure1OutlinePG-TO247-3,dimensionsinmm/inches Final Data Sheet 10 Rev.2.1,2020-02-03 StrongIRFETª IRF150P220 RevisionHistory IRF150P220 Revision:2020-02-03,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 1.0 2018-09-21 Release of preliminary version 2.0 2018-09-21 Release of final version 2.1 2020-02-03 Update from IR MOSFT/StrongIRFETTM to StrongIRFETTM Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. 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TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 11 Rev.2.1,2020-02-03