IRG4BC30FD1

PD - 94773 IRG4BC30FD1 Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features • Fast: optimized for medium operating frequencies (1-5 kHz in hard switching, >20kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3. • IGBT co-packaged with Hyperfast FRED diodes for ultra low recovery characteristics. • Industry standard TO-220AB package. VCE(on) typ. = 1.59V G @VGE = 15V, IC = 17A E n-channel Benefits • Generation 4 IGBT's offer highest efficiency available. • IGBT's optimized for specific application conditions. • FRED diodes optimized for performance with IGBT's. Minimized recovery characteristics require less / no snubbing. TO-220AB Absolute Maximum Ratings Max. Units VCES Collector-to-Emitter Voltage Parameter 600 V IC @ TC = 25°C Continuous Collector Current 31 IC @ TC = 100°C Continuous Collector Current Pulse Collector Current (Ref.Fig.C.T.5) ICM d 17 c A 120 ILM Clamped Inductive Load current IF @ TC = 100°C Diode Continuous Forward Current 8 IFM Diode Maximum Forward Current 16 VGE Gate-to-Emitter Voltage ±20 V PD @ TC = 25°C Maximum Power Dissipation 100 W 120 PD @ TC = 100°C Maximum Power Dissipation TJ Operating Junction and TSTG Storage Temperature Range Storage Temperature Range, for 10 sec. 42 -55 to +150 °C 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m) Thermal / Mechanical Characteristics Min. Typ. Max. Units RθJC Junction-to-Case- IGBT Parameter ––– ––– 1.2 °C/W RθJC Junction-to-Case- Diode ––– ––– 2.0 RθCS Case-to-Sink, flat, greased surface ––– 0.50 ––– RθJA Junction-to-Ambient, typical socket mount ––– ––– 80 Wt Weight ––– 2.0 (0.07) ––– www.irf.com g (oz.) 1 09/03/03 IRG4BC30FD1 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)CES Collector-to-Emitter Breakdown Voltage e ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage VCE(on) Collector-to-Emitter Voltage Min. Typ. Max. Units 600 — — — 0.69 — — 1.59 1.8 — 1.99 — — 1.7 — VGE(th) Gate Threshold Voltage 3.0 — 6.0 ∆VGE(th)/∆TJ Threshold Voltage temp. coefficient — -11 — gfe ICES Forward Transconductance Zero Gate Voltage Collector Current 6.1 10 — — — 250 — — 2500 — 2.0 2.4 — 1.3 1.8 — — ±100 VFM f Diode Forward Voltage Drop IGES Gate-to-Emitter Leakage Current V Conditions VGE = 0V, IC = 250µA V/°C VGE = 0V, IC = 1mA IC = 17A V VGE = 15V IC = 31A See Fig. 2, 5 IC = 17A, TJ = 150°C V VCE = VGE, IC = 250µA mV/°C VCE = VGE, IC = 250µA S VCE = 100V, IC = 17A µA VGE = 0V, VCE = 600V V IF = 8.0A VGE = 0V, VCE = 600V, TJ = 150°C See Fig. 13 IF = 8.0A, TJ = 150°C nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Qg Total Gate Charge (turn-on) — 57 62 Qge Gate-to-Emitter Charge (turn-on) — 10 12 Qgc Gate-to-Collector Charge (turn-on) — 21 24 td(on) Turn-On delay time — 22 — tr Rise time — 24 — td(off) Turn-Off delay time — 250 320 tf Fall time — 160 210 Eon Turn-On Switching Loss — 370 — Eoff Turn-Off Switching Loss — 1420 — Ets Total Switching Loss — 1800 2290 td(on) Turn-On delay time — 21 — tr Rise time — 25 — Conditions IC = 17A nC VCC = 400V See Fig. 8 VGE = 15V TJ = 25°C ns IC = 17A, VCC = 480V VGE = 15V, RG = 23Ω Energy losses inlcude "tail" and diode reverse recovery. µJ See Fig. 9, 10, 11, 18 TJ = 150°C ns See Fig. 9,10,11,18 IC = 17A, VCC = 480V td(off) Turn-Off delay time — 400 — VGE = 15V, RG = 23Ω tf Fall time — 340 — Energy losses inlcude "tail" and Ets Total Switching Loss — 3280 — µJ diode reverse recovery. LE Internal Emitter Inductance — 7.5 — nH Cies Input Capacitance — 1170 — Measured 5mm from package VGE = 0V Coes Output Capacitance — 100 — pF VCC = 30V Cres Reverse Transfer Capacitance — 11 — trr Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge di(rec)M/dt 2 — 46 61 — 85 93 — 4.8 6.5 — 8.5 10 — 110 190 410 550 Diode Peak Rate of Fall of Recovery — 260 — During tb — 270 — See Fig. 7 f = 1.0MHz ns TJ = 25°C TJ = 125°C A TJ = 25°C TJ = 125°C nC TJ = 25°C TJ = 125°C A/µs TJ = 25°C TJ = 125°C See Fig. 14 IF = 12A See Fig. 15 VR = 200V See Fig. 16 di/dt 200A/µs See Fig. 17 www.irf.com IRG4BC30FD1 Fig. 1 - Typical Load Current vs. Frequency (For square wave, I=IRMS of fundamental; for triangular wave, I=IPK) 1000 TJ = 25°C 100 TJ = 150°C 10 V GE = 15V 20µs PULSE WIDTH A 1 1 10 IC , Collector-to-Emitter Current (A) IC , Collector-to-Emitter Current (A) 1000 100 TJ = 150°C TJ = 25°C 10 V CC = 50V 5µs PULSE WIDTH A 1 5 6 7 8 9 10 11 12 VCE , Collector-to-Emitter Voltage (V) VGE, Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 13 3 IRG4BC30FD1 2.5 V GE = 15V VCE , Collector-to-Emitter Voltage (V) Maximum DC Collector Current (A) 40 30 20 10 0 VGE = 15V 80µs PULSE WIDTH I C = 34A 2.0 I C = 17A 1.5 I C = 8.5A A 1.0 25 50 75 100 125 150 -60 TC , Case Temperature (°C) Fig. 4 - Maximum Collector Current vs. Case Temperature -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (°C) Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 PDM 0.10 0.1 0.02 0.01 0.01 0.00001 t 0.05 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 /t 1 t 2 2 2. Peak TJ = PDM x Z thJC + T C 0.0001 0.001 0.01 0.1 1 10 t 1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4BC30FD1 2000 1600 VGE, Gate-to-Emitter Voltage (V) 1800 Capacitance (pF) 14 VGS = 0V, f = 1 MHZ C ies = C ge + C gd, C ce SHORTED C res = C gc C oes = C ce + C gc 1400 Cies 1200 1000 800 Coes 600 400 VCC = 400V IC = 17A 12 10 8 6 4 2 Cres 200 0 0 0 1 10 100 10 1000 Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage 40 50 60 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 9000 2000 VCE = 480V VGE = 15V 8000 TJ = 25°C I C = 17A Total Swiching Losses (mJ) Total Swiching Losses (mJ) 30 Q G, Total Gate Charge (nC) VCE, Collector-toEmitter-Voltage(V) 1900 20 1800 1700 7000  RG = 22Ω VGE = 15V VCC = 480V IC = 34A 6000 5000 4000 IC = 17A 3000 2000 IC = 8.5A 1000 0 1600 0 10 20 30 40 RG, Gate Resistance (Ω) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com 50 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J, Juntion Temperature (°C) Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4BC30FD1 8000 1000 TJ = 150°C VCE= 480V VGE = 15V 7000 6000 5000 4000 3000 2000 VGE = 20V GE TJ = 125°C 100 SAFE OPERATING AREA 10 1000 0 10 20 30 1 40 1 10 100 1000 VCE , Collector-to-Emitter Voltage (V) IC, Collecto-to-Emitter (A) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA 100 Instantaneous Forward Current - I F (A) Total Swiching Losses (mJ) I C , Collector-to-Emitter Current (A) R G = 22Ω 10 T = 175˚C J T = 150˚C J T = 25˚C J 1 0.1 0 1 2 3 4 Forward Voltage Drop - VFM (V) Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 www.irf.com IRG4BC30FD1 200 175 20 V = 390V R T = 25°C _____ J T = 125°C ---------J V = 390V R T = 25°C _____ J T = 125°C ---------J 150 15 IF 125 = 16A trr (ns) IRRM (A) IF = 8A 100 10 75 50 IF 5 = 16A IF = 8A 25 0 0 100 200 300 400 500 600 700 800 900 1000 100 200 300 400 500 600 700 800 900 1000 diF /dt (A/µs) diF /dt (A/µs) Fig. 14 - Typical Reverse Recovery vs. dif/dt Fig. 15 - Typical Recovery Current vs. dif/dt 1000 900 1400 V = 390V R T = 25°C _____ J T = 125°C ---------J IF = 16A IF = 8A 1200 V = 390V R T = 25°C _____ J T = 125°C ---------J 800 1000 di(rec)M / dt (A/µs) 700 Qrr (nC) 600 500 400 300 IF = 8A 800 600 400 IF 200 = 16A 200 100 0 0 100 200 300 400 500 600 700 800 900 1000 100 200 300 400 500 600 700 800 900 1000 diF /dt (A/µs) diF /dt (A/µs) Fig. 16 - Typical Stored Charge vs. dif/dt www.irf.com Fig. 17 - Typical di(rec)M/dt vs. dif/dt 7 IRG4BC30FD1 90% Vge Same type device as D.U.T. +Vge Vce 430µF 80% of Vce D.U.T. Ic 90% Ic 10% Vce Ic 5% Ic td(off) tf Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf Eoff = ∫ t1+5µS Vce icIcdtdt Vce t1 t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf GATE VOLTAGE D.U.T. 10% +Vg trr Qrr = Ic trr id Ic dtdt tx ∫ +Vg tx 10% Vcc 10% Irr Vcc DUT VOLTAGE AND CURRENT Vce Vpk Irr Vcc 10% Ic 90% Ic Ipk Ic DIODE RECOVERY WAVEFORMS tr td(on) 5% Vce t1 ∫ t2 Eon = Vce VceieIcdt dt t1 t2 DIODE REVERSE RECOVERY ENERGY t3 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr 8 ∫ t4 Erec = Vd VdidIcdt dt t3 t4 Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr www.irf.com IRG4BC30FD1 Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT IN D1 t0 t1 t2 Fig.18e - Macro Waveforms for Figure 18a's Test Circuit D.U.T. L 1000V Vc* RL= 0 - 480V 480V 4 X IC @25°C 50V 6000µF 100V Fig. 19 - Clamped Inductive Load Test Circuit www.irf.com Fig. 20 - Pulsed Collector Current Test Circuit 9 IRG4BC30FD1 TO-220AB Package Outline Dimensions are shown in millimeters (inches) 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) 1.15 (.045) MIN 1 2 14.09 (.555) 13.47 (.530) 4.06 (.160) 3.55 (.140) 3X 3X 1.40 (.055) 1.15 (.045) LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN 3 0.93 (.037) 0.69 (.027) 0.36 (.014) 3X M B A M 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information EXAMPLE : THIS IS AN IRF1010 WITH ASSEMBLY LOT CODE 9B1M A INTERNATIONAL RECTIFIER LOGO PART NUMBER IRF1010 9246 9B 1M ASSEMBLY LOT CODE DATE CODE (YYWW) YY = YEAR WW = WEEK Notes:  Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20). ‚ VCC=80%(VCES), VGE=20V, L=10µH, RG = 23Ω (figure 19). ƒ Pulse width ≤ 80µs; duty factor ≤ 0.1%. „ Pulse width 5.0µs, single shot. … Energy losses include "tail" and diode reverse recovery, using Diode FD100H06A5. TO-220 package is not recommended for Surface Mount Application. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 09/03 10 www.irf.com Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/