IRG4BC30W-STRL

PD - 91790 IRG4BC30W-S INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50% reduction of Eoff parameter • Low IGBT conduction losses • Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability VCES = 600V VCE(on) typ. = 2.10V G @VGE = 15V, IC = 12A E n-channel Benefits • Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz ("hard switched" mode) • Of particular benefit to single-ended converters and boost PFC topologies 150W and higher • Low conduction losses and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >>300 kHz) D 2 Pak Absolute Maximum Ratings VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Parameter Max. Units Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current  Clamped Inductive Load Current ‚ Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy ƒ Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds 600 23 12 92 92 ± 20 180 100 42 -55 to + 150 V A V mJ W °C 300 (0.063 in. (1.6mm from case ) Thermal Resistance Parameter RθJC RθJA Junction-to-Case Junction-to-Ambient, ( PCB Mounted,steady-state)* Typ. Max. Units ––– ––– 1.2 40 °C/W * When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. www.irf.com 1 8/13/98 IRG4BC30W-S Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES V(BR)ECS ∆V(BR)CES/∆TJ VCE(ON) VGE(th) ∆VGE(th)/∆TJ gfe ICES IGES Parameter Min. Typ. Max. Units Conditions Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250µA Emitter-to-Collector Breakdown Voltage „ 18 — — V VGE = 0V, IC = 1.0A Temperature Coeff. of Breakdown Voltage — 0.34 — V/°C VGE = 0V, IC = 1.0mA — 2.1 2.7 IC = 12A VGE = 15V Collector-to-Emitter Saturation Voltage — 2.45 — IC = 23A See Fig.2, 5 V — 1.95 — IC = 12A , TJ = 150°C Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA Temperature Coeff. of Threshold Voltage — -11 — mV/°C VCE = VGE, IC = 250µA Forward Transconductance … 11 16 — S VCE = 100 V, IC = 12A — — 250 VGE = 0V, VCE = 600V Zero Gate Voltage Collector Current µA — — 2.0 VGE = 0V, VCE = 10V, TJ = 25°C — — 1000 VGE = 0V, VCE = 600V, TJ = 150°C Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. — — — — — — — — — — — — — — — — — — — Typ. 51 7.6 18 25 16 99 67 0.13 0.13 0.26 24 17 150 150 0.55 7.5 980 71 18 Max. Units Conditions 76 IC = 12A 11 nC VCC = 400V See Fig.8 27 VGE = 15V — — TJ = 25°C ns 150 IC = 12A, VCC = 480V 100 VGE = 15V, RG = 23Ω — Energy losses include "tail" — mJ See Fig. 9, 10, 13, 14 0.35 — TJ = 150°C, — IC = 12A, VCC = 480V ns — VGE = 15V, RG = 23Ω — Energy losses include "tail" — mJ See Fig. 11,13, 14 — nH Measured 5mm from package — VGE = 0V — pF VCC = 30V See Fig. 7 — ƒ = 1.0MHz Notes:  Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) ‚ VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 23Ω, (See fig. 13a) „ Pulse width ≤ 80µs; duty factor ≤ 0.1%. … Pulse width 5.0µs, single shot. ƒ Repetitive rating; pulse width limited by maximum junction temperature. 2 www.irf.com IRG4BC30W-S 5.0 For both: 4.0 Load C u rren t (A ) Triangular wave: Duty cycle: 50% T J = 125°C T sink= 90°C Gate drive as specified Power Dissipation = 1.75W Clamp voltage: 80% of rated 3.0 Square wave: 60% of rated voltage 2.0 1.0 Ideal diodes A 0.0 0.1 1 10 100 1000 f, F req uen cy (kH z) Fig. 1 - Typical Load Current vs. Frequency (For square wave, I=I RMS of fundamental; for triangular wave, I=IPK) 100 TJ = 150 °C 10 TJ = 25 °C V GE = 15V 20µs PULSE WIDTH 1 1 10 VCE , Collector-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com I C , Collector-to-Emitter Current (A) I C , Collector-to-Emitter Current (A) 100 TJ = 150 °C 10 TJ = 25 °C 1 0.1 5.0 V CC = 50V 5µs PULSE WIDTH 6.0 7.0 8.0 9.0 10.0 11.0 VGE , Gate-to-Emitter Voltage (V) Fig. 3 - Typical Transfer Characteristics 3 M a xim u m D C C o lle c to r C u rre n t (A IRG4BC30W-S 25 3.0 VCE , Collector-to-Emitter Voltage(V) V GE = 15V 20 15 10 5 A 0 25 50 75 100 125 150 VGE = 15V 80 us PULSE WIDTH I C = 24 A 2.5 I C = 12 A 2.0 1.5 -60 -40 -20 0 20 40 60 6A 80 100 120 140 160 TJ , Junction Temperature ( °C) TC , C a s e Te m p e ra tu re (°C ) Fig. 4 - Maximum Collector Current vs. Temperature IC = Case Fig. 5 - Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response (Z thJC) 10 1 D = 0.50 0.20 PDM 0.10 0.1 0.01 0.00001 0.05 0.02 0.01 t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.0001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4BC30W-S 2000 20 VGE , Gate-to-Emitter Voltage (V) VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc C, Capacitance (pF) 1500 Cies 1000 Coes 500 Cres 16 12 8 4 0 0 1 10 0 100 Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage 10 Total Switching Losses (mJ) V CC = 480V V GE = 15V TJ = 25 ° C 0.4 I C = 12A 0.3 0.2 0.1 0.0 10 20 30 40 RGR,G,Gate GateResistance Resistance(Ohm) (Ω) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com 20 30 40 50 60 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 0.5 0 10 QG , Total Gate Charge (nC) VCE , Collector-to-Emitter Voltage (V) Total Switching Losses (mJ) VCC = 400V I C = 12A 50 23Ω RG = Ohm VGE = 15V VCC = 480V IC = 24 A 1 IC = 12 A IC = 6A 0.1 0.01 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( ° C ) Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4BC30W-S RG TJ VCC VGE 1000 23Ω = Ohm = 150 °C = 480V = 15V I C , C ollector-to-E m itter C urrent (A ) Total Switching Losses (mJ) 1.5 1.0 0.5 100 S A FE O P E R A TIN G A R E A 10 1 0 .1 0.0 0 5 10 15 20 25 I C , Collector-to-emitter Current (A) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 6 VGGE E= 2 0V T J = 12 5 °C 30 1 10 100 1000 V C E , Collecto r-to-E m itter V oltage (V ) Fig. 12 - Turn-Off SOA www.irf.com IRG4BC30W-S L D .U .T. VC * 50V RL = 0 - 480V 1 00 0V 480V 4 X IC@25°C 480µF 960V  ‚ * Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax ) * Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor w ill inc rea se to obta in ra ted Id. Fig. 13a - Clamped Inductive Fig. 13b - Pulsed Collector Load Test Circuit Current Test Circuit IC L D river* D .U .T. VC Fig. 14a - Switching Loss Test Circuit 50V 1000V * Driver same type as D.U.T., VC = 480V  ‚ ƒ  ‚ 9 0% 1 0% ƒ VC 90 % Fig. 14b - Switching Loss t d (o ff) 10 % IC 5% Waveforms tf tr t d (o n ) t=5µ s E on E o ff E ts = ( Eo n +E o ff ) www.irf.com 7 IRG4BC30W-S D2Pak Package Outline 1 0 .5 4 (.4 1 5 ) 1 0 .2 9 (.4 0 5 ) 1 .4 0 (.0 55 ) M A X. -A - 1 .3 2 (.0 5 2 ) 1 .2 2 (.0 4 8 ) 2 1 .7 8 (.0 7 0 ) 1 .2 7 (.0 5 0 ) 1 1 0 .1 6 (.4 0 0 ) REF . -B - 4 .6 9 (.1 8 5 ) 4 .2 0 (.1 6 5 ) 6 .4 7 (.2 5 5 ) 6 .1 8 (.2 4 3 ) 1 5 .4 9 (.6 1 0 ) 1 4 .7 3 (.5 8 0 ) 3 2 .7 9 (.1 1 0 ) 2 .2 9 (.0 9 0 ) 2 .6 1 (.1 0 3 ) 2 .3 2 (.0 9 1 ) 5 .2 8 (.2 0 8 ) 4 .7 8 (.1 8 8 ) 3X 1 .4 0 (.0 5 5 ) 1 .1 4 (.0 4 5 ) 3X 5 .0 8 (.2 0 0 ) 0 .5 5 (.0 2 2 ) 0 .4 6 (.0 1 8 ) 0 .9 3 (.0 3 7 ) 0 .6 9 (.0 2 7 ) 0 .2 5 (.0 1 0 ) M 8 .8 9 (.3 5 0 ) REF. 1 .3 9 (.0 5 5 ) 1 .1 4 (.0 4 5 ) B A M M IN IM U M R E C O M M E N D E D F O O T P R IN T 1 1 .43 (.4 5 0 ) NOTES: 1 D IM E N S IO N S A F T E R S O L D E R D IP . 2 D IM E N S IO N IN G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 . 3 C O N T R O L L IN G D IM E N S IO N : IN C H . 4 H E A T S IN K & L E A D D IM E N S IO N S D O N O T IN C L U D E B U R R S . L E A D A S S IG N M E N T S 1 - GATE 2 - D R A IN 3 - SOURCE 8 .8 9 (.3 5 0 ) 1 7 .7 8 (.7 0 0 ) 3 .8 1 (.1 5 0 ) 2 .0 8 (.0 8 2 ) 2X 2 .5 4 (.1 0 0 ) 2X WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice.8/98 8 www.irf.com Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/