IRG4BH20K-S

PD-95891A IRG4BH20K-SPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • High short circuit rating optimized for motor control, tsc =10µs @ VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency than previous generations • Industry standard D2Pak package • Lead-Free VCES = 1200V VCE(on) typ. = 3.17V G @VGE = 15V, IC = 5.0A E n-channel Benefits • As a Freewheeling Diode we recommend our HEXFREDTM ultrafast, ultrasoft recovery diodes for minimum EMI / Noise and switching losses in the Diode and IGBT • Latest generation 4 IGBT's offer highest power density motor controls possible D2Pak Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM tsc VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current  Clamped Inductive Load Current ‚ Short Circuit Withstand Time Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy ƒ Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Max. Units 1200 11 5.0 22 22 10 ±20 130 60 24 -55 to +150 V A µs V mJ W °C Thermal Resistance Parameter RθJC RθCS RθJA Wt www.irf.com Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight Typ. Max. ––– 0.24 ––– 6 (0.21) 2.1 ––– 40 ––– Units °C/W g (oz) 1 01/21/2010 IRG4BH20K-SPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 1200 — Emitter-to-Collector Breakdown Voltage „ 18 — ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 1.13 — 3.17 VCE(ON) Collector-to-Emitter Saturation Voltage — 4.04 — 2.84 VGE(th) Gate Threshold Voltage 3.5 — ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -10 gfe Forward Transconductance … 2.3 3.5 — — ICES Zero Gate Voltage Collector Current — — — — IGES Gate-to-Emitter Leakage Current — — V(BR)CES V(BR)ECS Max. Units Conditions — V VGE = 0V, IC = 250µA — V VGE = 0V, IC = 1.0A — V/°C VGE = 0V, IC = 2.5mA 4.3 IC = 5.0A VGE = 15V — IC = 11A See Fig.2, 5 V — IC = 5.0A , TJ = 150°C 6.5 VCE = VGE, IC = 250µA — mV/°C VCE = VGE, IC = 1mA — S VCE = 100 V, IC = 5.0A 250 VGE = 0V, VCE = 1200V µA 2.0 VGE = 0V, VCE = 10V, TJ = 25°C 1000 VGE = 0V, VCE = 1200V, TJ = 150°C ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets tsc Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time td(on) tr td(off) tf Ets LE Cies Coes Cres Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. — — — — — — — — — — 10 — — — — — — — — — Typ. Max. Units Conditions 28 43 IC = 5.0A 4.4 6.6 nC VCC = 400V See Fig.8 12 18 VGE = 15V 23 — 26 — TJ = 25°C ns 93 140 IC =5.0A, VCC = 960V 270 400 VGE = 15V, RG = 50Ω 0.45 — Energy losses include "tail" 0.44 — mJ See Fig. 9,10,14 0.89 1.2 — — µs VCC = 720V, TJ = 125°C VGE = 15V, RG = 50Ω 23 — TJ = 150°C, 28 — IC = 5.0A, VCC = 960V ns 100 — VGE = 15V, RG = 50Ω 620 — Energy losses include "tail" 1.7 — mJ See Fig. 10,11,14 7.5 — nH Between lead and center of die contact 435 — VGE = 0V 44 — pF VCC = 30V See Fig. 7 8.3 — ƒ = 1.0MHz Notes:  Repetitive rating; VGE = 20V, pulse width limited by ƒ Repetitive rating; pulse width limited by maximum ‚ VCC = 80%(VCES), VGE = 20V, L = 10µH, RG =50Ω, „ Pulse width ≤ 80µs; duty factor ≤ 0.1%. max. junction temperature. ( See fig. 13b ) junction temperature. (See fig. 13a) … Pulse width 5.0µs, single shot. * When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. 2 www.irf.com IRG4BH20K-SPbF 16 F or both: 12 Load Current ( A ) Triangular wave: Duty cycle: 50% TJ = 125˚ C T sink = 90˚ C Gate drive as specified Clamp voltage: 80% of rated Power Dissipation = 15W Sq uare wav e: 8 60% of rated voltage 4 Ideal diodes 0 ) 0.1 1 10 100 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) I C , Collector-to-Emitter Current (A) 10 TJ = 150 °C 1 TJ = 25 °C 0.1 V GE = 15V 20µs PULSE WIDTH 1 10 VCE , Collector-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com I C , Collector-to-Emitter Current (A) 100 100 10 TJ = 150 °C TJ = 25 °C 1 V CC = 50V 5µs PULSE WIDTH 6 8 10 12 14 VGE , Gate-to-Emitter Voltage (V) Fig. 3 - Typical Transfer Characteristics 3 IRG4BH20K-SPbF 5.0 VCE , Collector-to-Emitter Voltage(V) Maximum DC Collector Current(A) 12 9 6 3 0 25 50 75 100 125 150 VGE = 15V 80 us PULSE WIDTH IC = 10 A 4.0 IC = 3.0 IC = 2.5 A 2.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 °C) TTJJ ,, Junction Junction Temperature Temperature ( (°C ) TC , Case Temperature ( °C) Fig. 4 - Maximum Collector Current vs. Case Temperature 5A Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.10 P DM 0.05 0.1 0.01 0.00001 0.02 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4BH20K-SPbF VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 600 Cies 400 200 Coes 20 VGE , Gate-to-Emitter Voltage (V) C, Capacitance (pF) 800 VCC = 400V I C = 11A 16 12 8 4 Cres 0 1 10 0 100 VCE , Collector-to-Emitter Voltage (V) 0 Total Switching Losses (mJ) Total Switching Losses (mJ) 10 VCC = 960V VGE = 15V TJ = 25 °C 0.90 I C = 11A 0.85 0.80 0.75 10 20 30 40 RG R,GGate Resistance , Gate Resistance(Ohm) (Ω) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com 15 20 25 30 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 0.95 0 10 QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage 0.70 5 50 Ω RG = 50Ohm VGE = 15V VCC = 960V IC = 10 A IC = 1 5A IC = 2.5 A 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 °C )) JunctionTemperature Temperature (( °C TTJJ, ,Junction Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4BH20K-SPbF RG TJ VCC 4.0 VGE 100 Ω = 50Ohm = 150° C = 960V = 15V I C , Collector Current (A) Total Switching Losses (mJ) 5.0 3.0 2.0 VGE = 20V T J = 125 o C 10 1.0 0.0 0 2 4 6 8 I C , Collector Current (A) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 6 10 1 SAFE OPERATING AREA 1 10 100 1000 10000 VCE, Collector-to-Emitter Voltage (V) Fig. 12 - Turn-Off SOA www.irf.com IRG4BH20K-SPbF L RL = VCC ICM D.U.T. VC * 50V 1000V c 0 - VCC d 480µF * Driver same type as D.U.T.; Vc = 80% of Vce(max) * Note: Due to the 50V power supply, pulse width and inductor will increase to obtain rated Id. Fig. 13b - Pulsed Collector Fig. 13a - Clamped Inductive Current Test Circuit Load Test Circuit IC L Driver* D.U.T. VC Test Circuit 50V 1000V c Fig. 14a - Switching Loss d e * Driver same type as D.U.T., VC = 960V c d 90% e VC 10% 90% Fig. 14b - Switching Loss t d(off) 10% I C 5% Waveforms tf tr t d(on) t=5µs E on E off E ts = (Eon +Eoff ) www.irf.com 7 IRG4BH20K-SPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information 7+,6,6$1,5)6:,7+ /27&2'( $66(0%/('21:: ,17+($66(0%/