IRG4PH50UPBF

PD - 95191 IRG4PH50UPbF Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than previous generations • Optimized for power conversion; SMPS, UPS and welding • Industry standard TO-247AC package • Lead-Free VCES = 1200V VCE(on) typ. = 2.78V G @VGE = 15V, IC = 24A E n-channel Benefits • Higher switching frequency capability than competitive IGBTs • Highest efficiency available • Much lower conduction losses than MOSFETs • More efficient than short circuit rated IGBTs TO-247AC Absolute Maximum Ratings VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Parameter Max. Units Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy S Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. 1200 45 24 180 180 ± 20 170 200 78 -55 to + 150 V A V mJ W °C 300 (0.063 in. (1.6mm) from case ) 10 lbf•in (1.1N•m) Thermal Resistance Parameter RθJC RθCS RθJA Wt www.irf.com Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight Typ. Max. ––– 0.24 ––– 6 (0.21) 0.64 ––– 40 ––– Units °C/W g (oz) 1 04/26/04 IRG4PH50UPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES V(BR)ECS ∆V(BR)CES/∆TJ VCE(ON) VGE(th) ∆VGE(th)/∆TJ gfe ICES IGES Parameter Min. Typ. Max. Units Conditions Collector-to-Emitter Breakdown Voltage 1200 — — V VGE = 0V, IC = 250µA Emitter-to-Collector Breakdown Voltage T 18 — — V VGE = 0V, IC = 1.0A Temperature Coeff. of Breakdown Voltage — 1.20 — V/°C VGE = 0V, IC = 1.0mA — 2.56 3.5 IC = 20A VGE = 15V — 2.78 3.7 IC = 24A Collector-to-Emitter Saturation Voltage V — 3.20 — IC = 45A See Fig.2, 5 — 2.54 — IC = 24A , TJ = 150°C Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA Temperature Coeff. of Threshold Voltage — -13 — mV/°C VCE = VGE, IC = 250µA Forward Transconductance U 23 35 — S VCE = 100V, IC = 24A — — 250 VGE = 0V, VCE = 1200V Zero Gate Voltage Collector Current — — 2.0 µA VGE = 0V, VCE = 24V, TJ = 25°C — — 5000 VGE = 0V, VCE = 1200V, TJ = 150°C Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets Eon Eoff Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Turn-On Switching Loss Turn-Off Switching Loss Ets Total Switching Loss LE Cies Coes Cres Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. — — — — — — — — — — — — — — — — — — — — — — — Notes: Q Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 5.0Ω, (See fig. 13a) 2 Typ. 160 27 53 35 15 200 290 0.53 1.41 1.94 31 18 320 280 5.40 0.35 1.43 1.78 4.56 13 3600 160 31 Max. Units Conditions 250 IC = 24A 40 nC VCC = 400V See Fig. 8 83 VGE = 15V — — TJ = 25°C ns 350 IC = 24A, VCC = 960V 500 VGE = 15V, RG = 5.0Ω — Energy losses include "tail" — mJ See Fig. 9, 10, 14 2.6 — TJ = 150°C — IC = 24A, VCC = 960V ns — VGE = 15V, RG = 5.0Ω — Energy losses include "tail" — See Fig. 11, 14 mJ — TJ = 25°C, VGE = 15V, RG = 5.0Ω — IC = 20A, VCC = 960V mJ 2.9 Energy losses include "tail" — See Fig. 9, 10, 11, 14, TJ = 150°C — nH Measured 5mm from package — VGE = 0V — pF VCC = 30V See Fig. 7 — ƒ = 1.0MHz S Repetitive rating; pulse width limited by maximum junction temperature. T Pulse width ≤ 80µs; duty factor ≤ 0.1%. U Pulse width 5.0µs, single shot. www.irf.com IRG4PH50UPbF 60 F o r b o th : Tria ngula r w a ve : D uty c yc le: 5 0 % TJ = 1 25 °C T = 9 0°C s in k G ate driv e as s pe c ifie d I C lam p v olta ge : 8 0% of ra ted Load Current (A) P ow er D issipa tio n = 40W 40 S q u a re w a v e : 6 0% of rate d volta ge 20 I Id e a l d io d e s A 0 0.1 1 10 100 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 1000 100 100 TJ = 150 o C  10 TJ = 25 o C  V = 15V  20µs PULSE WIDTH GE 1 I C, Collector-to-Emitter Current (A) I C , Collector-to-Emitter Current (A) 1000 1 10 VCE , Collector-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com TJ = 150 o C  10 TJ = 25 o C  V = 50V  5µs PULSE WIDTH CC 1 5 6 7 8 9 10 11 12 VGE , Gate-to-Emitter Voltage (V) Fig. 3 - Typical Transfer Characteristics 3 IRG4PH50UPbF 4.0 VCE , Collector-to-Emitter Voltage(V) Maximum DC Collector Current(A) 50 40 30 20 10 0 25 50 75 100 125 150 V = 15V  80 us PULSE WIDTH  I C = 48 A GE 3.5  I C = 24 A 3.0  I C = 12 A 2.5 2.0 -60 -40 -20 T C , Case Temperature ( ° C) 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( ° C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response (Z thJC ) 1 0.50 0.20 0.1 0.10 0.05  0.02 0.01 0.01 SINGLE PULSE  (THERMAL RESPONSE) P DM t1 t2 0.001 0.00001  Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4PH50UPbF VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc C, Capacitance (pF) 6000 5000 Cies  4000 3000 2000 Coes  1000 C res 0 1 10 20 VGE , Gate-to-Emitter Voltage (V)  7000 12 8 4 VCE , Collector-to-Emitter Voltage (V) 0 40 80 120 160 200 QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 100 5.0 VCC= 960V VGE = 15V TJ = 25°C I C = 24A 4.0 RG = 5.0Ω VGE = 15V Total Switching Losses (mJ) Total Switching Losses (mJ) VCC = 400V I C = 24A 16 0 100  3.0 2.0 1.0 0.0 0 10 20 30 40 RG, Gate Resistance (Ω ) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com 50 VCC = 960V IC = 48A 10 IC = 24A IC = 12A 1 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J, Junction Temperature (°C) Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4PH50UPbF 1000 RG = 5.0Ω TJ = 150°C VGE = 15V VCC = 960V 15 I C , Collector-to-Emitter Current (A) Total Switching Losses (mJ) 20  VGE = 20V T J = 125 oC 100 10 5 SAFE OPERATING AREA 0 0 10 20 30 40 IC, Collector Current (A) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 6 10 50 1 1 10 100 1000 10000 VCE , Collector-to-Emitter Voltage (V) Fig. 12 - Turn-Off SOA www.irf.com IRG4PH50UPbF L D .U .T. VC * 50V RL = 0 - 960V 1 00 0V Q 960V 4 X IC@25°C 480µF 960V R * Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax ) * Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor w ill inc rea se to obta in ra ted Id. Fig. 13a - Clamped Inductive Fig. 13b - Pulsed Collector Load Test Circuit Current Test Circuit IC L D river* D .U .T. VC Fig. 14a - Switching Loss Test Circuit 50V 1000V Q * Driver same type as D.U.T., VC = 960V R S Q R 90 % 10 % S VC 90 % Fig. 14b - Switching Loss t d (o ff) 1 0% IC 5% Waveforms tf tr t d (o n ) t=5µ s Eon E o ff E ts = (E o n +E o ff ) www.irf.com 7 IRG4PH50UPbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information EXAMPLE: T HIS IS AN IRFPE30 WITH AS SEMBLY LOT CODE 5657 AS SEMBLED ON WW 35, 2000 IN THE AS SEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" INTERNAT IONAL RECTIFIER LOGO AS SEMBLY LOT CODE PART NUMBER IRFPE30 56 035H 57 DAT E CODE YEAR 0 = 2000 WEEK 35 LINE H Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 04/04 8 www.irf.com Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/