IRG7PH42UPBF

PD - 96233A INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • Low VCE (ON) trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Tight parameter distribution Lead -Free C IRG7PH42UPbF IRG7PH42U-EP VCES = 1200V IC = 60A, TC = 100°C G E TJ(max) =175°C n-channel VCE(on) typ. = 1.7V Benefits • High efficiency in a wide range of applications • Suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses • Rugged transient performance for increased reliability • Excellent current sharing in parallel operation C C GC E Applications • • • • U.P.S Welding Solar inverter Induction heating TO-247AC IRG7PH42UPbF E GC TO-247AD IRG7PH42U-EP G Gate C Collector E Emitter Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C INOMINAL ICM ILM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current (Silicon Limited) Continuous Collector Current (Silicon Limited) Nominal Current Pulse Collector Current, VGE = 15V Clamped Inductive Load Current, VGE = 20V Continuous Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw 300 (0.063 in. (1.6mm) from case) 10 lbf·in (1.1 N·m) Max. 1200 90 60 30 Units V g A c 90 120 ±30 385 192 -55 to +175 °C V W Thermal Resistance Parameter RθJC (IGBT) RθCS RθJA Thermal Resistance Junction-to-Case-(each IGBT) TO-247AC Thermal Resistance, Case-to-Sink (flat, greased surface) f f Min. ––– ––– ––– Typ. ––– 0.24 40 Max. 0.39 ––– ––– Units °C/W Thermal Resistance, Junction-to-Ambient (typical socket mount) 1 www.irf.com 02/18/10 IRG7PH42UPbF/IRG7PH42U-EP Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)CES ∆V(BR)CES/∆TJ Min. 1200 — — — — 3.0 — — — — — Typ. — 1.2 1.7 2.1 2.2 — -16 32 1 700 — Max. Units — — 2.0 — — 6.0 — — 150 — ±100 V V Conditions VGE = 0V, IC = 100µA Collector-to-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage e V/°C VGE = 0V, IC = 1mA (25°C-150°C) IC = 30A, VGE = 15V, TJ = 25°C V IC = 30A, VGE = 15V, TJ IC = 30A, VGE = 15V, TJ VCE = VGE, IC = 1mA VCE(on) VGE(th) ∆VGE(th)/∆TJ Collector-to-Emitter Saturation Voltage Gate Threshold Voltage Threshold Voltage temp. coefficient Forward Transconductance Collector-to-Emitter Leakage Current Gate-to-Emitter Leakage Current e d = 150°C d = 175°C d gfe ICES IGES mV/°C VCE = VGE, IC = 1mA (25°C - 175°C) S VCE = 50V, IC = 30A, PW = 80µs µA nA VGE = 0V, VCE = 1200V VGE = 0V, VCE = 1200V, TJ = 175°C VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Qg Qge Qgc Eon Eoff Etotal td(on) tr td(off) tf Eon Eoff Etotal td(on) tr td(off) tf Cies Coes Cres RBSOA Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Reverse Bias Safe Operating Area Min. — — — — — — — — — — — — — — — — — — — — Typ. 157 21 69 2105 1182 3287 25 32 229 63 3186 2153 5339 20 31 310 162 3338 124 75 Max. Units 236 32 104 2374 1424 3798 34 41 271 86 — — — — — — — — — — pF ns µJ ns µJ nC IC = 30A d Conditions VGE = 15V VCC = 600V IC = 30A, VCC = 600V, VGE = 15V RG = 10Ω , L = 200µH,TJ = 25°C d Energy losses include tail & diode reverse recovery Diode clamp the same as IRG7PH42UDPbF IC = 30A, VCC = 600V, VGE=15V RG=10Ω , L=200µH, TJ = 175°C Ãd Energy losses include tail & diode reverse recovery Diode clamp the same as IRG7PH42UDPbF VGE = 0V VCC = 30V f = 1.0Mhz IC = 120A VCC = 960V, Vp =1200V Rg = 10Ω , VGE = +20V to 0V, TJ =175°C FULL SQUARE Notes: VCC = 80% (VCES ), VGE = 20V, L = 22µH, RG = 10Ω Pulse width ≤ 400µs; duty cycle ≤ 2%. Refer to AN-1086 for guidelines for measuring V(BR)CES safely. Rθ is measured at TJ of approximately 90°C. … Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 78A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements.  ‚ ƒ „ 2 www.irf.com IRG7PH42UPbF/IRG7PH42U-EP 60 50 Load Current ( A ) 40 30 Square wave: 60% of rated voltage I For both: Duty cycle : 50% Tj = 150°C Tsink = 90°C Gate drive as specified Power Dissipation = 95W 20 10 0 0.1 Ideal diodes 1 f , Frequency ( kHz ) 10 100 Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 400 350 80 300 250 Ptot (W) 60 IC (A) 200 150 100 40 20 50 0 0 25 50 75 100 T C (°C) 125 150 175 0 20 40 60 80 100 120 140 160 180 T C (°C) Fig. 2 - Maximum DC Collector Current vs. Case Temperature 1000 Fig. 3 - Power Dissipation vs. Case Temperature 1000 100 10µsec 100 IC (A) IC (A) 100µsec 10 1msec DC 10 1 Tc = 25°C Tj = 175°C Single Pulse 0.1 1 10 100 VCE (V) 1000 10000 1 10 100 VCE (V) 1000 10000 Fig. 4 - Forward SOA TC = 25°C, TJ ≤ 175°C; VGE =15V Fig. 5 - Reverse Bias SOA TJ = 175°C; VGE =20V www.irf.com 3 IRG7PH42UPbF/IRG7PH42U-EP 120 100 80 60 40 20 0 0 2 4 6 8 10 VCE (V) VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V ICE (A) ICE (A) 120 100 80 60 40 20 0 0 2 4 6 8 10 VCE (V) VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V Fig. 6 - Typ. IGBT Output Characteristics TJ = -40°C; tp =20µs 120 100 80 Fig. 7 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 20µs 12 10 8 VCE (V) ICE (A) ICE = 15A 6 4 2 0 4 8 12 VGE (V) 16 60 40 20 0 0 2 4 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V ICE = 30A ICE = 60A 6 8 10 VCE (V) 20 Fig. 8 - Typ. IGBT Output Characteristics TJ = 175°C; tp = 20µs 12 10 8 VCE (V) 12 10 8 Fig. 9 - Typical VCE vs. VGE TJ = -40°C 6 4 2 0 4 8 12 VGE (V) ICE = 30A ICE = 60A VCE (V) ICE = 15A ICE = 15A 6 4 2 0 4 8 12 VGE (V) 16 ICE = 30A ICE = 60A 16 20 20 Fig. 10 - Typical VCE vs. VGE TJ = 25°C Fig. 11 - Typical VCE vs. VGE TJ = 175°C 4 www.irf.com IRG7PH42UPbF/IRG7PH42U-EP 120 ICE, Collector-to-Emitter Current (A) 7000 6000 TJ = 25°C T J = 175°C 100 80 60 40 20 0 4 6 8 10 12 VGE, Gate-to-Emitter Voltage (V) 5000 Energy (µJ) 4000 3000 2000 1000 0 0 10 20 EON EOFF 30 IC (A) 40 50 60 Fig. 12- Typ. Transfer Characteristics VCE = 50V; tp = 20µs 1000 tdOFF Fig. 13 - Typ. Energy Loss vs. IC TJ = 175°C; L = 200µH; VCE = 600V, RG = 10Ω; VGE = 15V 6000 5500 5000 Swiching Time (ns) 100 tR 10 tdON Energy (µJ) tF 4500 4000 3500 3000 2500 2000 1500 EON EOFF 1 0 10 20 30 IC (A) 40 50 60 1000 0 25 50 Rg ( Ω) 75 100 Fig. 14 - Typ. Switching Time vs. IC TJ = 175°C; L = 200µH; VCE = 600V, RG = 10Ω; VGE = 15V 10000 Fig. 15 - Typ. Energy Loss vs. RG TJ = 175°C; L = 200µH; VCE = 600V, ICE = 30A; VGE = 15V Swiching Time (ns) 1000 tdOFF 100 tF tR tdON 0 20 40 60 80 100 10 RG ( Ω) Fig. 16 - Typ. Switching Time vs. RG TJ = 175°C; L = 200µH; VCE = 600V, ICE = 30A; VGE = 15V www.irf.com 5 IRG7PH42UPbF/IRG7PH42U-EP 10000 Cies VGE, Gate-to-Emitter Voltage (V) 16 14 12 10 8 6 4 2 0 0 25 50 75 100 125 150 175 Q G, Total Gate Charge (nC) VCES = 600V VCES = 400V Capacitance (pF) 1000 100 Coes Cres 10 0 100 200 300 VCE (V) 400 500 600 Fig. 17 - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz Fig. 18- Typical Gate Charge vs. VGE ICE = 30A; L = 600µH 1 D = 0.50 Thermal Response ( Z thJC ) 0.1 0.20 0.10 0.05 0.01 0.02 0.01 τJ R1 R1 τJ τ1 τ2 R2 R2 R3 R3 τ3 R4 R4 τC τ τ4 Ri (°C/W) 0.1306 0.1752 0.0814 0.0031 τi (sec) 0.000313 0.002056 0.008349 0.0431 τ1 τ2 τ3 τ4 0.001 SINGLE PULSE ( THERMAL RESPONSE ) Ci= τi/Ri Ci i/Ri Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 0.0001 1E-006 1E-005 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 19. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) TO-247AC 6 www.irf.com IRG7PH42UPbF/IRG7PH42U-EP L L 0 DUT 1K VCC 80 V + - DUT Rg Vclamped Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit R = VCC ICM DIODE CLAMP L DUT / DRIVER Rg DUT VCC VCC Rg Fig.C.T.3 - Switching Loss Circuit Fig.C.T.4 - Resistive Load Circuit C f rce o 100K D1 22K C sense 0.0075µ Gf orce DUT E sense E f rce o Fig.C.T.5 - BVCES Filter Circuit www.irf.com 7 IRG7PH42UPbF/IRG7PH42U-EP 900 800 700 600 500 VCE (V) 400 300 200 100 0 -100 -0.5 E off L os s 90 tf 80 70 60 50 VCE (V) 90% ICE 5% V CE 5% ICE 900 800 700 TEST CURRENT 90 tr 80 70 60 90% tes t current 600 400 300 200 100 0 -100 9.3 40 30 5% V CE 30 20 10 0 -10 1.5 2 10% test current 20 10 0 Eon Loss 0 0.5 1 time(µs) 9.5 9.7 9.9 10.1 -10 10.3 time (µs) Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 175°C using Fig. CT.4 Fig. WF2 - Typ. Turn-on Loss Waveform @ TJ = 175°C using Fig. CT.4 8 www.irf.com ICE (A) 40 ICE (A) 500 50 IRG7PH42UPbF/IRG7PH42U-EP TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information @Y6HQG@) UCDTÃDTÃ6IÃDSAQ@"à XDUCÃ6TT@H7G`à GPUÃ8P9@Ã$%$& 6TT@H7G@9ÃPIÃXXÃ"$Ã! DIÃUC@Ã6TT@H7G`ÃGDI@ÃÅCÅ I‚‡r)ÃÅQÅÃvÃh††r€iy’Ãyvr†v‡v‚ vqvph‡r†ÃÅGrhqA…rrÅ Q6SUÃIVH7@S ,5)3( DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G` GPUÃ8P9@ à "$C $%ÃÃÃÃÃÃÃÃÃÃÃ$& 96U@Ã8P9@ `@6Sà Ã2Ã! X@@FÃ"$ GDI@ÃC TO-247AC package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 9 IRG7PH42UPbF/IRG7PH42U-EP Dimensions are shown in millimeters (inches) TO-247AD Package Outline TO-247AD Part Marking Information @Y6HQG@) UCDTÃDTÃ6IÃDSBQ"7 !F9@ XDUCÃ6TT@H7G`à GPUÃ8P9@Ã$%$& 6TT@H7G@9ÃPIÃXXÃ"$Ã! DIÃUC@Ã6TT@H7G`ÃGDI@ÃÅCÅ I‚‡r)ÃÅQÅÃvÃh††r€iy’Ãyvr†v‡v‚ vqvph‡r†ÃÅGrhqA…rrÅ DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G` GPUÃ8P9@ Q6SUÃIVH7@S Ã"$C $%ÃÃÃÃÃÃÃÃÃÃÃ$& 96U@Ã8P9@ `@6SÃÃ2Ã! X@@FÃ"$ GDI@ÃC TO-247AD package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 02/2010 10 www.irf.com