IRG4RC10KPBF

PD 95389 IRG4RC10KPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides higher efficiency than Generation 3 • Industry standard TO-252AA package • Lead-Free VCES = 600V VCE(on) typ. = 2.39V G @VGE = 15V, IC = 5.0A E n-channel Benefits • Generation 4 IGBT's offer highest efficiency available • IGBT's optimized for specified application conditions D-PAK TO-252AA Absolute Maximum Ratings VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM tsc VGE EARV PD @ T C = 25°C PD @ T C = 100°C TJ TSTG Parameter Max. Units Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current  Clamped Inductive Load Current ‚ Short Circuit Withstand Time Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy ƒ Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds 600 9.0 5.0 18 18 10 ± 20 34 38 15 -55 to + 150 V A µs V mJ W °C 300 (0.063 in. (1.6mm) from case ) Thermal Resistance Parameter RθJC RθJA Wt Junction-to-Case Junction-to-Ambient (PCB mount)* Weight Typ. Max. Units ––– ––– 0.3 (0.01) 3.3 50 ––– °C/W g (oz) * When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994 www.irf.com 1 06/10/04 IRG4RC10KPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES V(BR)ECS ∆V(BR)CES/∆TJ VCE(ON) VGE(th) ∆VGE(th)/∆TJ gfe ICES IGES Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 600 — Emitter-to-Collector Breakdown Voltage „ 18 — Temperature Coeff. of Breakdown Voltage — 0.58 — 2.39 Collector-to-Emitter Saturation Voltage — 3.25 — 2.63 Gate Threshold Voltage 3.0 — Temperature Coeff. of Threshold Voltage — -11 Forward Transconductance … 1.2 1.8 — — Zero Gate Voltage Collector Current — — — — Gate-to-Emitter Leakage Current — — Max. Units Conditions — V VGE = 0V, IC = 250µA — V VGE = 0V, IC = 1.0A — V/°C VGE = 0V, IC = 1.0mA VGE = 15V 2.62 IC = 5.0A — IC = 9.0A See Fig.2, 5 V — IC = 5.0A , TJ = 150°C 6.5 VCE = VGE, IC = 250µA — mV/°C VCE = VGE, IC = 250µA — S VCE = 50 V, IC = 5.0A 250 VGE = 0V, VCE = 600V µA 2.0 VGE = 0V, VCE = 10V, TJ = 25°C 1000 VGE = 0V, VCE = 600V, TJ = 150°C ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets tsc td(on) tr td(off) tf Ets LE Cies Coes Cres Notes: Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Min. — — — — — — — — — — 10 Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance  Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) ‚ VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 100Ω, (See fig. 13a) 2 — — — — — — — — — Typ. Max. Units Conditions 19 29 IC = 5.0A 2.9 4.3 nC VCC = 400V See Fig.8 9.8 15 VGE = 15V 11 — 24 — TJ = 25°C ns 51 77 IC = 5.0A, VCC = 480V 190 290 VGE = 15V, R G = 100Ω 0.16 — Energy losses include "tail" 0.10 — mJ See Fig. 9,10,14 0.26 0.32 — — µs VCC = 400V, TJ = 125°C VGE = 15V, R G = 100Ω , VCPK < 500V 11 — TJ = 150°C, 27 — IC = 5.0A, VCC = 480V ns 67 — VGE = 15V, R G = 100Ω 350 — Energy losses include "tail" 0.47 — mJ See Fig. 10,11,14 7.5 — nH Measured 5mm from package 220 — VGE = 0V 29 — pF VCC = 30V See Fig. 7 7.5 — ƒ = 1.0MHz ƒ Repetitive rating; pulse width limited by maximum junction temperature. „ Pulse width ≤ 80µs; duty factor ≤ 0.1%. … Pulse width 5.0µs, single shot. www.irf.com IRG4RC10KPbF 4 For both: 3 Load Current (A) Triangular wave: Duty cycle: 50% TJ = 125°C Tsink= 55°C Gate drive as specified Power Dissipation = 1.4W Clamp voltage: 80% of rated Square wave: 2 60% of rated voltage 1 Ideal diodes A 0 0.1 1 10 100 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 TJ = 25 °C 10 TJ = 150 °C 1 1.0 V GE = 15V 20µs PULSE WIDTH 2.0 3.0 4.0 5.0 6.0 7.0 VCE , Collector-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com I C , Collector-to-Emitter Current (A) I C, Collector Current (A) 100 10 TJ = 150 °C TJ = 25 °C 1 5 10 VCC = 50V 5µs PULSE WIDTH 15 20 VGE , Gate-to-Emitter Voltage (V) Fig. 3 - Typical Transfer Characteristics 5µs PULSE WIDTH 3 IRG4RC10KPbF 5.0 VCE , Collector-to-Emitter Voltage(V) Maximum DC Collector Current(A) 10 8 6 4 2 0 25 50 75 100 125 150 VGE = 15V 80 us PULSE WIDTH IC = 10 A 4.0 3.0 IC = 5A IC = 2.5 A 2.0 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( ° C) TC , Case Temperature ( °C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response (Z thJC ) 10 D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 PDM SINGLE PULSE (THERMAL RESPONSE) t1 t2 0.01 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4RC10KPbF VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 300 Cies 200 100 Coes 20 VGE , Gate-to-Emitter Voltage (V) C, Capacitance (pF) 400 VCC = 400V I C = 5.0A 16 12 8 4 Cres 0 1 10 0 100 0 VCE , Collector-to-Emitter Voltage (V) Total Switching Losses (mJ) Total Switching Losses (mJ) 10 VCC = 480V VGE = 15V TJ = 25 °C I C = 5A 0.26 0.24 0.22 0.20 0 20 40 60 80 RG , Gate Resistance ( Ω ) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com 8 12 16 20 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage 0.28 4 QG , Total Gate Charge (nC) 100 100Ω RG = Ohm VGE = 15V VCC = 480V IC = 10 A 1 IC = 5A IC = 2.5 A 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C ) Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4RC10KPbF RG TJ VCC 1.0 VGE 100 = 100 OhmΩ = 150 ° C = 480V = 15V I C , Collector Current (A) Total Switching Losses (mJ) 1.2 0.8 0.6 VGE = 20V T J = 125 oC 10 0.4 SAFE OPERATING AREA 0.2 1 2 4 6 8 1 10 10 Fig. 11 - Typical Switching Losses vs. Collector Current L 1000 Fig. 12 - Turn-Off SOA D.U.T. RL = VC * 50V 100 VCE , Collector-to-Emitter Voltage (V) I C , Collector Current (A) 0 - 480V 1000V 480V 4 X I C@25°C 480µF 960V c d * Driver same type as D.U.T.; Vc = 80% of Vce(max) * Note: Due to the 50V power supply, pulse width and inductor will increase to obtain rated Id. Fig. 13a - Clamped Inductive Fig. 13b - Pulsed Collector Load Test Circuit Current Test Circuit IC L Driver* D.U.T. VC Fig. 14a - Switching Loss Test Circuit 50V 1000V c 6 d e * Driver same type as D.U.T., VC = 480V www.irf.com IRG4RC10KPbF c d 90% e VC 10% 90% Fig. 14b - Switching Loss t d(off) 10% I C 5% Waveforms tf tr t d(on) t=5µs E on E off E ts = (Eon +Eoff ) www.irf.com 7 IRG4RC10KPbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) 2.38 (.094) 2.19 (.086) 6.73 (.265) 6.35 (.250) 1.14 (.045) 0.89 (.035) -A1.27 (.050) 0.88 (.035) 5.46 (.215) 5.21 (.205) 0.58 (.023) 0.46 (.018) 4 6.45 (.245) 5.68 (.224) 6.22 (.245) 5.97 (.235) 10.42 (.410) 9.40 (.370) 1.02 (.040) 1.64 (.025) 1 2 LEAD ASSIGNMENTS 1 - GATE 3 0.51 (.020) MIN. -B1.52 (.060) 1.15 (.045) 4 - DRAIN 3X 2X 2 - DRAIN 3 - SOURCE 1.14 (.045) 0.76 (.030) 0.89 (.035) 0.64 (.025) 0.25 (.010) 0.58 (.023) 0.46 (.018) M A M B NOTES: 2.28 (.090) 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH. 3 CONFORMS TO JEDEC OUTLINE TO-252AA. 4.57 (.180) 4 DIMENSIONS SHOWN ARE BEFORE SOLDER DIP, SOLDER DIP MAX. +0.16 (.006). D-Pak (TO-252AA) Part Marking Information EXAMPLE: T HIS IS AN IRFR120 WITH AS S EMBLY LOT CODE 1234 ASS EMBLED ON WW 16, 1999 IN THE AS S EMBLY LINE "A" PART NUMBER INT ERNATIONAL RECTIFIER LOGO IRFR120 12 N ote: "P" in as sembly line pos ition indicates "Lead-Free" AS S EMBLY LOT CODE 916A 34 DATE CODE YEAR 9 = 1999 WEEK 16 LINE A OR PART NUMBER INTERNATIONAL RECT IFIER LOGO IRFR120 12 AS S EMBLY LOT CODE 8 P916A 34 DAT E CODE P = DES IGNAT ES LEAD-FREE PRODUCT (OPTIONAL) YEAR 9 = 1999 WEEK 16 A = AS S EMBLY S ITE CODE www.irf.com IRG4RC10KPbF D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION TRL 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 06/04 www.irf.com 9 Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/