IRG7PH42UD2-EP

IRG7PH42UD2PbF IRG7PH42UD2-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • Low VCE (ON) Trench IGBT Technology Low Switching Losses Square RBSOA 100% of the parts tested for 4X rated current (ILM) Positive VCE (ON) Temperature co-efficient Ultra-low VF Diode Tight parameter distribution Lead Free Package C VCES = 1200V IC = 30A, TC = 100°C G VCE(on) typ. = 1.69V E n-channel Benefits • Device optimized for induction heating and soft switching applications • High Efficiency due to Low VCE(on), Low Switching Losses and Ultra-low VF • Rugged transient Performance for increased reliability • Excellent Current sharing in parallel operation • Low EMI C C G C E TO-247AC IRG7PH42UD2PbF G Gate Base part number Package Type IRG7PH42UD2PbF IRG7PH42UD2-EP TO-247AC TO-247AD G E TO-247AD IRG7PH42UD2-EP C Collector Standard Pack Form Tube Tube C E Emitter Orderable Part Number Quantity 25 25 IRG7PH42UD2PbF IRG7PH42UD2-EP Absolute Maximum Ratings Max. Units VCES Collector-to-Emitter Voltage Parameter 1200 V IC @ TC = 25°C Continuous Collector Current 60 IC @ TC = 100°C ICM Continuous Collector Current Pulse Collector Current, VGE=15V 30 ILM Clamped Inductive Load Current, VGE=20V IF @ TC = 100°C IFSM Diode Continous Forward Current Diode Non Repetitive Peak Surge Current @ TJ = 25°C 90 c d A 120 10 d 170 IFM Diode Peak Repetitive Forward Current VGE Continuous Gate-to-Emitter Voltage ±30 PD @ TC = 25°C Maximum Power Dissipation 321 PD @ TC = 100°C Maximum Power Dissipation 128 TJ Operating Junction and TSTG Storage Temperature Range 90 V W -55 to +150 °C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m) Thermal Resistance Min. Typ. Max. RθJC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) Parameter ––– ––– 0.39 RθJC (Diode) Thermal Resistance Junction-to-Case-(each Diode) ––– ––– 0.82 RθCS Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.24 ––– RθJA Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– 40 ––– 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback Units °C/W August 20, 2014 IRG7PH42UD2PbF/IRG7PH42UD2-EP Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. 1200 — — V VGE = 0V, IC = 100μA Repetitive Transient Collector-to-Emitter Voltage — — 1300 V VGE = 0V, TJ=75°C, PW ≤ 10μs Temperature Coeff. of Breakdown Voltage — 1.18 — — 1.69 2.02 V(BR)CES Collector-to-Emitter Breakdown Voltage V(BR)Transient ΔV(BR)CES/ΔTJ Max. Units VCE(on) Collector-to-Emitter Saturation Voltage — 2.07 — VGE(th) Gate Threshold Voltage 3.0 — 6.0 ΔVGE(th)/ΔTJ Threshold Voltage temp. coefficient — -15 — gfe Forward Transconductance ICES Collector-to-Emitter Leakage Current VFM Diode Forward Voltage Drop IGES Gate-to-Emitter Leakage Current — 32 — — 1.0 150 — 450 1000 — 1.08 1.24 — 1.0 1.15 — — ±100 Conditions Ref.Fig e CT4 V/°C VGE = 0V, IC = 1mA (25°C-150°C) IC = 30A, VGE = 15V, TJ = 25°C V IC = 30A, VGE = 15V, TJ = 150°C V VCE = VGE, IC = 1.0mA V nA 8,9,10 8,9 mV/°C VCE = VGE, IC = 1.0mA (25°C - 150°C) S VCE = 50V, IC = 30A, PW = 60μs μA CT4 4,5,6 10,11 VGE = 0V, VCE = 1200V VGE = 0V, VCE = 1200V, TJ = 150°C IF = 10A 7 IF = 10A, TJ = 150°C VGE = ±30V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Min. Typ. Qg Total Gate Charge (turn-on) Parameter — 156 Max. Units 234 Qge Gate-to-Emitter Charge (turn-on) — 21 32 Qgc Gate-to-Collector Charge (turn-on) — 69 104 Eoff Turn-Off Switching Loss — 1320 1460 td(off) Turn-Off delay time — 233 292 tf Fall time — 64 85 Conditions Ref.Fig IC = 30A nC 17 VGE = 15V CT1 VCC = 600V IC = 30A, VCC = 600V, VGE = 15V μJ RG = 10Ω, L = 200μH,TJ = 25°C CT3 Energy losses include tail ns IC = 30A, VCC = 600V, VGE = 15V RG = 10Ω, L = 200μH,TJ = 25°C IC = 30A, VCC = 600V, VGE = 15V Eoff Turn-Off Switching Loss — 2080 — μJ td(off) Turn-Off delay time — 297 — ns tf Fall time — 173 — RG = 10Ω, L = 200μH,TJ = 150°C CT3 Energy losses include tail Cies Input Capacitance — 3338 — Coes Output Capacitance — 124 — Cres Reverse Transfer Capacitance — 75 — RBSOA Reverse Bias Safe Operating Area FULL SQUARE IC = 30A, VCC = 600V, VGE = 15V WF1 RG=10Ω, L=200μH, TJ = 150°C VGE = 0V pF 16 VCC = 30V f = 1.0Mhz TJ = 150°C, IC = 120A VCC = 960V, Vp =1200V 3 CT2 Rg = 10Ω, VGE = +15V to 0V Notes:  VCC = 80% (VCES), VGE = 20V, L = 200μH, RG = 10Ω. ‚ Pulse width limited by max. junction temperature. ƒ Refer to AN-1086 for guidelines for measuring V(BR)CES safely. 2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback August 20, 2014 70 350 60 300 50 250 40 200 Ptot (W) IC (A) IRG7PH42UD2PbF/IRG7PH42UD2-EP 30 150 100 20 50 10 0 0 0 25 50 75 100 125 0 150 20 40 60 80 100 120 140 160 T C (°C) T C (°C) Fig. 1 - Maximum DC Collector Current vs. Case Temperature Fig. 2 - Power Dissipation vs. Case Temperature 1000 120 100 100 IC (A) ICE (A) 80 10 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 60 40 20 1 0 10 100 1000 10000 0 2 VCE (V) 8 10 Fig. 4 - Typ. IGBT Output Characteristics TJ = -40°C; tp = 80μs 120 120 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 80 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 100 80 ICE (A) 100 ICE (A) 6 VCE (V) Fig. 3 - Reverse Bias SOA TJ = 150°C; VGE =15V 60 60 40 40 20 20 0 0 0 2 4 6 8 10 0 2 Fig. 5 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 80μs www.irf.com © 2014 International Rectifier 4 6 8 10 VCE (V) VCE (V) 3 4 Fig. 6 - Typ. IGBT Output Characteristics TJ = 150°C; tp = 80μs Submit Datasheet Feedback August 20, 2014 IRG7PH42UD2PbF/IRG7PH42UD2-EP 14 1000 12 10 VCE (V) IF (A) 100 10 25°C 150°C 1 ICE = 15A 8 ICE = 30A ICE = 60A 6 4 2 0.1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 4.0 5 VF (V) 12 12 10 10 ICE = 15A ICE = 30A ICE = 60A VCE (V) VCE (V) 14 4 ICE = 30A ICE = 60A 6 2 0 5 10 15 0 20 5 VGE (V) 10 20 Fig. 10 - Typical VCE vs. VGE TJ = 150°C 120 4500 100 4000 3500 Energy (μJ) 80 60 T J = 25°C T J = 150°C 40 15 VGE (V) Fig. 9 - Typical VCE vs. VGE TJ = 25°C ICE, Collector-to-Emitter Current (A) ICE = 15A 8 4 2 EOFF 3000 2500 2000 20 1500 0 1000 4 6 8 10 12 0 VGE, Gate-to-Emitter Voltage (V) Fig. 11 - Typ. Transfer Characteristics VCE = 50V; tp = 10μs 4 20 VGE (V) 14 6 15 Fig. 8 - Typical VCE vs. VGE TJ = -40°C Fig. 7 - Typ. Diode Forward Voltage Drop Characteristics 8 10 www.irf.com © 2014 International Rectifier 25 50 75 IC (A) Fig. 12 - Typ. Energy Loss vs. IC TJ = 150°C; L = 200μH; VCE = 600V, RG = 10Ω; VGE = 15V Submit Datasheet Feedback August 20, 2014 IRG7PH42UD2PbF/IRG7PH42UD2-EP 6000 1000 5500 EOFF 5000 4000 Energy (μJ) Swiching Time (ns) 4500 tdOFF 3500 3000 2500 tF 2000 1500 1000 0 100 0 10 20 30 40 50 60 25 50 70 75 100 125 Rg (Ω) IC (A) Fig. 14 - Typ. Energy Loss vs. RG TJ = 150°C; L = 200μH; VCE = 600V, ICE = 30A; VGE = 15V Fig. 13 - Typ. Switching Time vs. IC TJ = 150°C; L = 200μH; VCE = 600V, RG = 10Ω; VGE = 15V 10000 10000 Cies 1000 Capacitance (pF) Swiching Time (ns) tdOFF 1000 tF 100 100 Coes Cres 10 1 10 0 20 40 60 80 100 0 120 100 200 300 400 500 600 VCE (V) RG (Ω) Fig. 16 - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz Fig. 15 - Typ. Switching Time vs. RG TJ = 150°C; L = 200μH; VCE = 600V, ICE = 30A; VGE = 15V VGE, Gate-to-Emitter Voltage (V) 16 VCES = 600V VCES = 400V 14 12 10 8 6 4 2 0 0 25 50 75 100 125 150 175 Q G, Total Gate Charge (nC) Fig. 17 - Typical Gate Charge vs. VGE ICE = 30A; L = 600μH 5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback August 20, 2014 IRG7PH42UD2PbF/IRG7PH42UD2-EP 1 Thermal Response ( Z thJC ) D = 0.50 0.1 0.20 0.10 0.05 0.01 0.001 0.02 0.01 τJ SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 1E-005 R1 R1 τJ τ1 R2 R2 R3 R3 Ri (°C/W) R4 R4 τC τ τ2 τ1 τ3 τ2 τ4 τ3 Ci= τi/Ri Ci i/Ri τ4 τi (sec) 0.1306 0.000313 0.1752 0.002056 0.0814 0.008349 0.0031 0.0431 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 18. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) Thermal Response ( Z thJC ) 10 1 D = 0.50 0.1 0.01 0.001 0.0001 1E-006 0.20 0.10 0.05 0.02 0.01 τJ SINGLE PULSE ( THERMAL RESPONSE ) 1E-005 0.0001 R1 R1 τJ τ1 τ1 R2 R2 τ2 τ2 R3 R3 τ3 τC τ τ3 Ci= τi/Ri Ci i/Ri 0.001 Ri (°C/W) 0..344 τi (sec) 0.00112 0.328 0.003118 0.147 0.015806 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 19. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) 6 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback August 20, 2014 IRG7PH42UD2PbF/IRG7PH42UD2-EP L L 0 80 V VC C D UT DU T 4 80V Rg 1K Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit DIODE CLAMP / DUT L - 5V DUT / DRIVER VCC Rg Fig.C.T.3 - Switching Loss Circuit Fig.C.T.4 - BVCES Filter Circuit 1000 50 900 45 tf 800 40 700 35 30 90% ICE 500 25 400 20 300 I CE (A) V CE (V) 600 15 10% ICE 5%V CE 200 10 100 5 0 0 Eoff Loss -100 -1 0 1 -5 2 time(μs) Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 150°C using Fig. CT.3 7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback August 20, 2014 IRG7PH42UD2PbF/IRG7PH42UD2-EP TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information EXAMPLE: THIS IS AN IRFPE30 WITH AS SEMBLY LOT CODE 5657 ASS EMBLED ON WW 35, 2001 IN THE AS SEMBLY LINE "H" Note: "P" in as sembly line pos ition indicates "Lead-Free" INTERNAT IONAL RECT IFIER LOGO PART NUMBER IRFPE30 56 ASS EMBLY LOT CODE 135H 57 DATE CODE YEAR 1 = 2001 WEEK 35 LINE H TO-247AC package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 8 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback August 20, 2014 IRG7PH42UD2PbF/IRG7PH42UD2-EP TO-247AD Package Outline Dimensions are shown in millimeters (inches) TO-247AD Part Marking Information EXAMPLE: T HIS IS AN IRGP30B120KD-E WIT H AS S EMBLY LOT CODE 5657 AS S EMBLED ON WW 35, 2000 IN T HE AS S EMBLY LINE "H" Note: "P" in as sembly line pos ition indicates "Lead-Free" INT ERNAT IONAL RECT IFIER LOGO PART NUMBER 56 035H 57 AS S EMBLY LOT CODE DAT E CODE YEAR 0 = 2000 WEEK 35 LINE H TO-247AD package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 9 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback August 20, 2014 IRG7PH42UD2PbF/IRG7PH42UD2-EP † Qualification Information † Industrial Qualification Level Moisture Sensitivity Level (per JEDEC JESD47F) †† TO-247AC N/A TO-247AD N/A Yes RoHS Compliant † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability †† Applicable version of JEDEC standard at the time of product release Revision History Date 8/20/2014 Comments • Datasheet updated based on IR corporate template. • Removed “APPROVED (not released)” from top header on page 1. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 10 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback August 20, 2014