IRGPC50F

PD - 9.695A IRGPC50F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 1.7V G @VGE = 15V, I C = 39A E n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. TO-247AC Absolute Maximum Ratings Parameter VCES IC @ T C = 25°C IC @ T C = 100°C ICM ILM VGE EARV PD @ T C = 25°C PD @ T C = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Max. Units 600 70 39 280 280 ±20 20 200 78 -55 to +150 V A V mJ W °C 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1N•m) Thermal Resistance Parameter RθJC RθCS RθJA Wt Junction-to-Case Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. Typ. Max. — — — — — 0.24 — 6 (0.21) 0.64 — 40 — Units °C/W g (oz) Revision 0 C-87 IRGPC50F Electrical Characteristics @ TJ = 25°C (unless otherwise specified) VCE(on) Parameter Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Temp. Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage VGE(th) ∆VGE(th)/∆TJ gfe ICES Gate Threshold Voltage Temp. Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current IGES Gate-to-Emitter Leakage Current V(BR)CES V(BR)ECS ∆V(BR)CES/∆TJ Min. Typ. Max. Units Conditions 600 — — V VGE = 0V, I C = 250µA 20 — — V VGE = 0V, IC = 1.0A — 0.62 — V/°C VGE = 0V, I C = 1.0mA — 1.4 1.7 IC = 39A V GE = 15V — 2.0 — V IC = 70A See Fig. 2, 5 — 1.7 — IC = 39A, T J = 150°C 3.0 — 5.5 VCE = VGE, IC = 250µA — -14 — mV/°C VCE = VGE, IC = 250µA 21 30 — S VCE = 100V, I C = 39A — — 250 µA VGE = 0V, V CE = 600V — — 2000 VGE = 0V, V CE = 600V, T J = 150°C — — ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Min. — — — — — — — — — — — — — — — — — — — Typ. 84 20 51 24 50 270 210 1.7 4.3 6.0 25 49 440 410 9.0 13 3000 340 40 Max. Units Conditions 100 IC = 39A 25 nC VCC = 400V See Fig. 8 67 VGE = 15V — TJ = 25°C — ns IC = 39A, V CC = 480V 540 VGE = 15V, R G = 5.0Ω 360 Energy losses include "tail" — — mJ See Fig. 9, 10, 11, 14 9.0 — TJ = 150°C, — ns IC = 39A, V CC = 480V — VGE = 15V, R G = 5.0Ω — Energy losses include "tail" — mJ See Fig. 10, 14 — nH Measured 5mm from package — VGE = 0V — pF VCC = 30V See Fig. 7 — ƒ = 1.0MHz Notes: Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See fig. 13b ) Repetitive rating; pulse width limited by maximum junction temperature. VCC=80%(V CES), VGE=20V, L=10µH, R G= 5.0Ω, ( See fig. 13a ) Pulse width ≤ 80µs; duty factor ≤ 0.1%. C-88 Pulse width 5.0µs, single shot. IRGPC50F 80 Fo r both: 60 LO A D C U RR E N T (A ) Triangular w ave: D uty c yc le: 50% T J = 125° C T s in k = 90°C G ate d riv e as s pec ified Po w er D issip ation = 40W C lam p v oltage: 80 % of rated S quare w av e: 40 60% of ra ted voltage 20 Ideal diodes 0 0.1 1 10 100 f, F re quency (kH z) Fig. 1 - Typical Load Current vs. Frequency (For square wave, I=I RMS of fundamental; for triangular wave, I=I PK) 1000 TJ = 2 5°C TJ = 25 °C IC , C ollector-to-E mitter C urrent (A ) I C , Collector-to-E m itter C urrent (A) 1000 TJ = 1 50 °C 100 10 V G E = 15 V 2 0 µs P U L S E W ID TH 1 0.1 1 TJ = 1 5 0°C 100 10 V C C = 1 00 V 5µ s P UL S E W IDTH 1 5 10 10 15 20 V G E , G ate -to-E m itter V olta ge (V ) V C E , C o llector-to-Em itter V oltage (V) Fig. 3 - Typical Transfer Characteristics Fig. 2 - Typical Output Characteristics C-89 Revision 0 IRGPC50F 3.0 V G E = 15 V V C E , C ollecto r-to -E m itter V o ltag e (V ) M aximum D C Collector Current (A ) 70 60 50 40 30 20 10 VG E = 1 5 V 80 µs P U L S E W ID TH I C = 78 A 2.5 2.0 I C = 39 A 1.5 I C = 20 A 1.0 0 25 50 75 100 125 -60 150 -40 -20 0 20 40 60 80 1 00 120 140 160 TC , C ase Tem perature (°C ) T C , C ase Tem perature (°C ) Fig. 5 - Collector-to-Emitter Voltage vs. Case Temperature Fig. 4 - Maximum Collector Current vs. Case Temperature T he rm al R espons e (Z thJC ) 1 D = 0 .5 0 0 .2 0 0.1 0 .1 0 PDM 0 .0 5 t 0 .0 2 0.01 0.00001 t2 S ING L E P U L S E (TH E R M A L R E S PO N S E) 0 .0 1 1 N o te s : 1 . D u ty fa c to r D = t 1 / t 2 2 . P e a k TJ = P D M x Z th J C + T C 0.000 1 0.001 0.01 0.1 1 t 1 , R ectangu lar Pulse D u ration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case C-90 10 IRGPC50F 7000 5000 V G E , G ate-to-Em itter V oltage (V ) 6000 C , C apacitance (pF ) 20 V GE = 0V, f = 1MHz C ies = C ge + C gc , C ce SHORTED C res = C gc C oes = C ce + C gc V C E = 4 80 V I C = 3 9A 16 Cies 12 4000 Coes 3000 2000 Cres 1000 0 8 4 0 1 10 1 00 0 30 V C E , C o llector-to-Em itter V oltage (V) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage VC C VG E TC IC 90 120 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 100 = 4 80 V = 15 V = 25 °C = 3 9A To ta l S w itc hing Lo sse s (m J) Total S witching Losses (m J) 7 .5 60 Q g , Total G ate C harge (nC ) 7 .0 6 .5 6 .0 5 .5 R G = 2 .0 Ω V GE = 1 5V V CC = 48 0V I C = 7 8A I C = 39 A 10 I C = 2 0A 1 0 10 20 30 40 50 -60 R G , G ate R es istance (Ω ) -40 -20 0 20 40 60 80 100 120 140 1 60 TC , C ase Tem peratu re (°C ) W Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Case Temperature C-91 IRGPC50F RG TC V CC VGE 20 1000 = 2 .0 Ω = 1 50°C = 48 0V = 15V I C , C o lle c to r-to -E m itte r C u rre n t (A ) Total Sw itching Losses (m J ) 25 15 10 5 VGGE E= 20 V T J = 12 5°C S A FE O P E RA TIN G A RE A 100 10 1 0 0 20 40 60 1 80 10 100 V C E , C o lle cto r-to-E m itte r V olta g e (V ) I C , C ollecto r-to-E m itter C urrent (A ) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA Refer to Section D for the following: Appendix C: Section D- page D-5 Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit Fig. 14a - Switching Loss Test Circuit Fig. 14b - Switching Loss Waveform Package Outline 3 - JEDEC Outline TO-247AC (TO-3P) C-92 Section D - page D-13 1000 Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/