IRGS4615DTRRPBF

IRGS4615DPbF IRGB4615DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C VCES = 600V C C IC = 15A, TC = 100°C E G tsc > 5µs, Tjmax = 175°C G E VCE(on) typ. = 1.55V @ 8A TO-220AB IRGB4615DPbF G C E Gate Collector Em itter Benefits High efficiency in a wide range of applications and switching frequencies Improved reliability due to rugged hard switching performance and higher power capability Square RBSOA and maximum junction temperature 175°C Positive VCE(ON) temperature coefficient and tighter distribution of parameters 5μs short circuit SOA Lead-free, RoHS compliant IRGS4615DPbF IRGS4615DTRRPbF IRGS4615DTRLPbF IRGB4615DPbF E → Features Low VCE(ON) and switching losses Base part number D2-Pak IRGS4615DPbF n-channel Applications • Appliance Drives • Inverters • UPS G C Excellent current sharing in parallel operation Enables short circuit protection scheme Environmentally friendly Standard Pack Form Tube Tape and Reel Right Tape and Reel Left Tube Package Type 2 D PAK TO-220AB Orderable Part Number Quantity 50 800 800 50 IRGS4615DPbF IRGS4615DTRRPbF IRGS4615DTRLPbF IRGB4615DPbF Absolute Maximum Ratings VCES IC@ TC = 25°C IC@ TC = 100°C ICM ILM IF@TC=25°C IF@TC=100°C IFM VGE PD @ TC =25° PD @ TC =100° TJ TSTG 1 Parameter Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Max. 600 23 15 Pulsed Collector Current, VGE = 15V Clamped Inductive Load Current, VGE = 20V Diode Continuous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting Torque, 6-32 or M3 Screw TO-220 c f www.irf.com © 2014 International Rectifier Submit Datasheet Feedback Units V 24 32 14 9 32 ± 20 ± 30 99 50 A V W -40 to + 175 °C 300 10lbf. In (1.1 N.m) November 14, 2014 IRGS/B4615DPbF Thermal Resistance RθJC RθJC RθCS Parameter Thermal Resistance, Junction-to-Case -(each IGBT) Thermal Resistance, Junction-to-Case -(each Diode) Thermal Resistance, Case-to-Sink (flat, greased surface) d d h Thermal Resistance, Junction-to-Ambient (PCB mount D2PAK) Thermal Resistance, Junction-to-Ambient ( Socket mount: TO-220) RθJA Min. ––– ––– ––– Typ. ––– ––– 0.5 Max. 1.51 3.66 ––– ––– ––– ––– ––– 40 62 Units °C/W Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. V(BR)CES Collector-to-Emitter Breakdown Voltage 600 ΔV(BR)CES/ΔTJ Temperature Coeff. of Breakdown Voltage — — Collector-to-Emitter Saturation Voltage — VCE(on) — Gate Threshold Voltage 4.0 VGE(th) — ΔVGE(th)/ΔTJ Threshold Voltage temp. coefficient gfe Forward Transconductance — — ICES Collector-to-Emitter Leakage Current — — VFM Diode Forward Voltage Drop — Gate-to-Emitter Leakage Current — IGES Typ. Max. Units Conditions — — V VGE = 0V, Ic =100 μA 0.3 — V/°C VGE = 0V, Ic = 250μA ( 25 -175oC ) IC = 8.0A, VGE = 15V, T J = 25°C 1.55 1.85 IC = 8.0A, VGE = 15V, T J = 150°C 1.95 — V IC = 8.0A, VGE = 15V, T J = 175°C 2.00 — VCE = VGE, IC = 250μA — 6.5 V — mV/°C VCE = VGE, IC = 250μA ( 25 -175oC ) -18 VCE = 50V, IC = 8.0A, PW =80μs 5.6 — S — 25 μA VGE = 0V,VCE = 600V VGE = 0V, VCE = 600V, T J =175°C 400 — IF = 8.0A 1.80 2.8 V IF = 8.0A, T J = 175°C 1.30 — — ±100 nA VGE = ± 20 V e Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc Eon Eoff Etotal td(on) tr td(off) tf Eon Eoff Etotal td(on) tr td(off) tf Cies Coes Cres Parameter Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance RBSOA Reverse Bias Safe Operating Area SCSOA Short Circuit Safe Operating Area Erec trr Irr Reverse recovery energy of the diode Diode Reverse recovery time Peak Reverse Recovery Current Conditions Typ. Max. Units 19 — IC = 8.0A 5 — nC VCC = 400V 8 — VGE = 15V 70 — IC = 8.0A, VCC = 400V, VGE = 15V 145 — μJ RG = 47Ω, L=1mH, LS= 150nH, TJ = 25°C Energy losses include tail and diode reverse recovery — 215 — IC = 8.0A, VCC = 400V 30 — ns R 15 G = 47Ω, L=1mH, LS= 150nH — TJ = 25°C 95 — 20 165 — IC = 8.0A, VCC = 400V, VGE = 15V 240 — μJ RG = 47Ω, L=1mH, LS= 150nH, TJ = 175°C Energy losses include tail and diode reverse recovery — 405 — IC = 8.0A, VCC = 400V 28 — ns RG = 47Ω, L=1mH, LS= 150nH 17 — TJ = 175°C 117 — 35 535 — VGE = 0V pF VCC = 30V 45 — 15 — f = 1Mhz TJ = 175°C, IC = 32A FULL SQUARE VCC = 480V, Vp =600V RG = 47Ω, VGE = +20V to 0V VCC = 400V, Vp =600V 5 — μs — RG = 47Ω, VGE = +15V to 0V o — — 165 μJ TJ = 175 C 60 ns VCC = 400V, IF = 8.0A — — — 14 — A VGE = 15V, Rg = 47Ω, L=1mH, LS=150nH Min. — — — — — — — — — — — — — — — — — — — — Notes:  ‚ ƒ „ … † VCC = 80% (VCES ), VGE = 20V, L = 100 μH, RG = 47 Ω. Rθ is measured at TJ approximately 90°C. Refer to AN-1086 for guidelines for measuring V(BR)CES safely. Pulse width limited by max. junction temperature. Values influenced by parasitic L and C in measurement When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994: http://www.irf.com/technical-info/appnotes/an-994.pdf 2 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback November 14, 2014 g g IRGS/B4615DPbF 24 110 22 100 20 90 18 80 70 14 Ptot (W) IC (A) 16 12 10 60 50 8 40 6 30 4 20 2 10 0 25 50 75 100 125 150 0 175 25 50 75 100 125 150 175 TC (°C) TC (°C) Fig. 1 - Maximum DC Collector Current vs. Case Temperature Fig. 2 - Power Dissipation vs. Case Temperature 100 100 10μs 10 IC A) IC (A) 100μs 10 DC 1ms 1 Tc = 25°C Tj = 175°C Single Pulse 0.1 1 1 10 100 1000 10 100 VCE (V) VCE (V) Fig. 4 - Reverse Bias SOA TJ = 175°C; VCE = 15V Fig. 3 - Forward SOA, TC = 25°C; TJ ≤ 175°C 30 VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 25 20 ICE (A) 20 ICE (A) 30 VGE = 18V 25 15 15 10 10 5 5 0 0 0 2 4 6 8 0 2 VCE (V) Fig. 5 - Typ. IGBT Output Characteristics TJ = -40°C; tp = 80μs 3 1000 www.irf.com © 2013 International Rectifier 4 6 8 V CE (V) Fig. 6 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 80μs Submit Datasheet Feedback November 14, 2014 IRGS/B4615DPbF 80 30 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 25 60 -40°C 25°C 175°C 50 IF (A) ICE (A) 20 70 15 40 30 10 20 5 10 0 0 0 2 4 6 0.0 8 1.0 2.0 Fig. 7 - Typ. IGBT Output Characteristics TJ = 175°C; tp = 80μs Fig. 8 - Typ. Diode Forward Characteristics tp = 80μs 20 20 18 18 16 16 ICE = 4.0A 12 ICE = 16A 10 ICE = 4.0A 14 ICE = 8.0A VCE (V) VCE (V) 14 8 ICE = 8.0A 12 ICE = 16A 10 8 6 6 4 4 2 2 0 0 5 10 15 5 20 10 15 20 VGE (V) V GE (V) Fig. 9 - Typical VCE vs. VGE TJ = -40°C Fig. 10 - Typical VCE vs. VGE TJ = 25°C 35 20 18 TJ = 25°C TJ = 175°C 30 16 14 ICE = 4.0A 25 ICE = 16A 20 ICE = 8.0A 12 10 ICE (A) VCE (V) 4.0 VF (V) V CE (V) 8 6 15 10 4 5 2 0 0 5 10 15 20 0 5 Fig. 11 - Typical VCE vs. VGE TJ = 175°C www.irf.com © 2013 International Rectifier 10 15 V GE (V) V GE (V) 4 3.0 Fig. 12 - Typ. Transfer Characteristics VCE = 50V; tp = 10μs Submit Datasheet Feedback November 14, 2014 IRGS/B4615DPbF 1000 500 450 400 300 Swiching Time (ns) Energy (μJ) 350 EOFF 250 200 EON 150 tdOFF 100 tF tdON tR 10 100 50 0 1 0 5 10 15 20 0 5 10 I C (A) 20 IC (A) Fig. 14 - Typ. Switching Time vs. IC TJ = 175°C; L=1mH; VCE= 400V RG= 47Ω; VGE= 15V Fig. 13 - Typ. Energy Loss vs. IC TJ = 175°C; L = 1mH; VCE = 400V, RG = 47Ω; VGE = 15V. 350 1000 300 EOFF Swiching Time (ns) 250 Energy (μJ) 15 EON 200 150 100 tdOFF 100 tdON tR tF 50 0 10 0 25 50 75 100 125 0 25 RG (Ω) 50 75 100 125 RG (Ω) Fig. 15 - Typ. Energy Loss vs. RG TJ = 175°C; L = 1mH; VCE = 400V, ICE = 8A; VGE = 15V 30 25 25 RG =10 Ω 20 RG =22 Ω 15 RG =47 Ω 10 RG = 100 Ω Fig. 16- Typ. Switching Time vs. RG TJ = 175°C; L=1mH; VCE= 400V ICE= 8A; VGE= 15V IRR (A) IRR (A) 20 15 10 5 5 0 0 5 10 15 20 0 0 25 IF (A) Fig. 17 - Typical Diode IRR vs. IF TJ = 175°C 5 www.irf.com © 2013 International Rectifier 50 75 100 125 RG (Ω) Fig. 18 - Typical Diode IRR vs. RG TJ = 175°C; IF = 8.0A Submit Datasheet Feedback November 14, 2014 IRGS/B4615DPbF 1400 25 10Ω 1200 47 Ω QRR (nC) IRR (A) 1000 15 10 16A 22Ω 20 100Ω 800 8.0A 600 4.0A 400 5 200 0 0 0 500 0 1000 500 1000 1500 diF /dt (A/μs) diF /dt (A/μs) Fig. 20 - Typical Diode QRR VCC= 400V; VGE= 15V; TJ = 175°C Fig. 19- Typical Diode IRR vs. diF/dt VCC= 400V; VGE= 15V; ICE= 8A; TJ = 175°C 500 450 18 80 16 70 14 60 12 50 10 40 8 30 6 20 300 Time (μs) Energy (μJ) 350 250 10 Ω 200 22 Ω 150 47 Ω 100 Ω 100 50 10 4 0 0 5 10 15 20 8 10 12 14 16 Fig. 22- Typ. VGE vs Short Circuit Time VCC=400V, TC =25°C Fig. 21 - Typical Diode ERR vs. IF TJ = 175°C 16 14 Cies 300V 12 100 VGE (V) Capacitance (pF) 18 VGE (V) I F (A) 1000 Current (A) 400 Coes 400V 10 8 6 10 Cres 4 2 0 1 0 20 40 60 80 100 VCE (V) Fig. 23- Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz 6 www.irf.com © 2013 International Rectifier 0 5 10 15 20 Q G, Total Gate Charge (nC) Fig. 24 - Typical Gate Charge vs. VGE ICE = 8A, L=600μH Submit Datasheet Feedback November 14, 2014 IRGS/B4615DPbF Thermal Response ( ZthJC ) 10 1 D = 0.50 0.20 0.1 0.10 0.05 τJ 0.02 0.01 R1 R1 τJ τ1 R2 R2 R3 R3 Ri (°C/W) τC τ2 τ1 τ2 τ3 τ τ3 Ci= τi/Ri Ci= τi/Ri 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 τι (sec) 0.555579 0.000216 0.590565 0.00117 0.365255 0.009076 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) 10 Thermal Response ( ZthJC ) D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 0.01 0.001 1E-006 τJ 0.0001 R2 R2 R3 R3 Ri (°C/W) τC τ1 τ2 τ2 τ3 τ τ3 Ci= τi/Ri Ci= τi/Ri SINGLE PULSE ( THERMAL RESPONSE ) 1E-005 R1 R1 τJ τ1 τι (sec) 0.821094 0.000233 1.913817 0.001894 0.926641 0.014711 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) 7 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback November 14, 2014 IRGS/B4615DPbF L L DUT 0 VCC 1K Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.3 - S.C.SOA Circuit Fig.C.T.5 - Resistive Load Circuit 8 www.irf.com © 2013 International Rectifier 80 V + - DUT Rg 480V Fig.C.T.2 - RBSOA Circuit Fig.C.T.4 - Switching Loss Circuit Fig.C.T.6 - Typical Filter Circuit for V(BR)CES Measurement Submit Datasheet Feedback November 14, 2014 IRGS/B4615DPbF 500 25 500 25 400 20 400 20 tr 90% ICE 15 tf 10 5% ICE 100 5 200 90% test t 10 100 10% test current 5 5% V CE 5% V CE 0 0 0 0 EOFF Loss -100 -0.40 0.10 EON Loss -5 1.10 0.60 -100 11.70 Time (μs) Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 175°C using Fig. CT.4 Fig. WF2 - Typ. Turn-on Loss Waveform @ TJ = 175°C using Fig. CT.4 15 500 tRR 10% Peak IRR Peak IRR -20 -0.05 VCE (V) IRR (A) ICE 300 0.05 0.15 time (μS) WF.3- Typ. Reverse Recovery Waveform @ TJ = 175°C using CT.4 www.irf.com © 2013 International Rectifier 80 60 200 40 100 20 0 -15 9 VCE 400 0 -10 100 QRR 5 -5 -5 12.10 11.90 Time(μs) 10 15 TEST ICE (A) 200 300 VCE (V) VCE (V) 300 0 -100 -5.00 0.00 5.00 -20 10.00 time (μS) WF.4- Typ. Short Circuit Waveform @ TJ = 25°C using CT.3 Submit Datasheet Feedback November 14, 2014 IRGS/B4615DPbF TO-220AB Package Outline (Dimensions are shown in millimeters (inches)) TO-220AB Part Marking Information EXAMPLE: T HIS IS AN IRF1010 LOT CODE 1789 AS S EMBLED ON WW 19, 2000 IN T HE AS S EMBLY LINE "C" INT ERNAT IONAL RECT IFIER LOGO Note: "P" in as s embly line position indicates "Lead - Free" AS S EMBLY LOT CODE PART NUMBER DAT E CODE YEAR 0 = 2000 WEEK 19 LINE C TO-220AB packages are not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback November 14, 2014 IRGS/B4615DPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information T HIS IS AN IRF530S WIT H LOT CODE 8024 AS S EMBLED ON WW 02, 2000 IN T HE AS S EMBLY LINE "L" INT ERNAT IONAL RECT IFIER LOGO PART NUMBER F530S DAT E CODE YEAR 0 = 2000 WEEK 02 LINE L AS S EMBLY LOT CODE OR INT ERNAT IONAL RECT IFIER LOGO AS S EMBLY LOT CODE PART NUMBER F530S DAT E CODE P = DES IGNATES LEAD - FREE PRODUCT (OPT IONAL) YEAR 0 = 2000 WEEK 02 A = AS S EMBLY S ITE CODE Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 11 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback November 14, 2014 IRGS/B4615DPbF D2Pak Tape & Reel Information (Dimensions are shown in millimeters (inches)) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 0.368 (.0145) 0.342 (.0135) 24.30 (.957) 23.90 (.941) 15.42 (.609) 15.22 (.601) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 60.00 (2.362) MIN. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 12 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback November 14, 2014 IRGS/B4615DPbF Qualification Information† Industrial Qualification Level Moisture Sensitivity Level (per JEDEC JESD47F) 2 MSL1 N/A D Pak TO-220 RoHS Compliant †† Yes † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability †† Applicable version of JEDEC standard at the time of product release Revision History Date 11/14/2014 Comments • Added note to IFM Diode Maximum Forward Current on page 1. • Added note to switching losses test condition on page 2. • Updated package outline on page 10. f g IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 13 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback November 14, 2014