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IRL3502SPBF

IRL3502SPBF

  • 厂商:

    EUPEC(英飞凌)

  • 封装:

    SOT404

  • 描述:

    MOSFET N-CH 20V 110A D2PAK

  • 数据手册
  • 价格&库存
IRL3502SPBF 数据手册
PD - 95126 IRL3502SPbF HEXFET® Power MOSFET Advanced Process Technology Surface Mount l Optimized for 4.5V-7.0V Gate Drive l Ideal for CPU Core DC-DC Converters l Fast Switching l Lead-Free Description l D l VDSS = 20V RDS(on) = 0.007Ω G ID = 110A† S These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters in the PC environment. Advanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum efficiency at minimum cost. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. D 2 Pak Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C V GS VGSM EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 4.5V… Continuous Drain Current, VGS @ 4.5V… Pulsed Drain Current … Power Dissipation Linear Derating Factor Gate-to-Source Voltage Gate-to-Source Voltage (Start Up Transient, tp = 100µs) Single Pulse Avalanche Energy‚… Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ… Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. Units 110† 67 420 140 1.1 ± 10 14 A W W/°C V V 390 64 14 5.0 -55 to + 150 mJ A mJ V/ns 300 (1.6mm from case ) °C Thermal Resistance Parameter RθJC RθJA Junction-to-Case Junction-to-Ambient ( PCB Mounted,steady-state)** Typ. Max. Units ––– ––– 0.89 40 °C/W 3/18/04 IRL3502SPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time LS Internal Source Inductance Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance IGSS Min. 20 ––– ––– ––– 0.70 77 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.019 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 10 140 96 130 Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1.0mA… 0.008 VGS = 4.5V, ID = 64A „ Ω 0.007 VGS = 7.0V, ID = 64A „ ––– V VDS = VGS , ID = 250µA ––– S VDS = 10V, ID = 64A… 25 VDS = 20V, VGS = 0V µA 250 VDS = 10V, V GS = 0V, TJ = 150°C 100 VGS = 10V nA -100 VGS = -10V 110 ID = 64A 27 nC VDS = 16V 39 VGS = 4.5V, See Fig. 6 „… ––– VDD = 10V ––– ID = 64A ns ––– RG = 3.8Ω, VGS = 4.5V ––– RD = 0.15Ω, „… Between lead, nH ––– 7.5 ––– and center of die contact ––– 4700 ––– VGS = 0V ––– 1900 ––– pF VDS = 15V ––– 640 ––– ƒ = 1.0MHz, See Fig. 5… Source-Drain Ratings and Characteristics IS I SM V SD t rr Q rr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) … Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol ––– ––– 110† showing the A G integral reverse ––– ––– 420 S p-n junction diode. ––– ––– 1.3 V TJ = 25°C, IS = 64A, VGS = 0V „ ––– 87 130 ns TJ = 25°C, IF = 64A ––– 200 310 nC di/dt = 100A/µs „… Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Starting TJ = 25°C, L = 190µH R G = 25Ω, IAS = 64A. ƒ ISD ≤ 64A, di/dt ≤ 86A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C „ Pulse width ≤ 300µs; duty cycle ≤ 2%. … Uses IRL3502 data and test conditions † Calculated continuous current based on maximum allowable junction temperature; for recommended current-handling of the package refer to Design Tip # 93-4 ** When mounted on FR-4 board using minimum recommended footprint. For recommended footprint and soldering techniques refer to application note #AN-994. ` IRL3502SPbF 1000 1000 VGS 7.00V 5.00V 4.50V 3.50V 3.00V 2.70V 2.50V BOTTOM 2.25V I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) 100 100 2.25V 20µs PULSE WIDTH TJ = 25 °C 10 0.1 1 10 2.25V 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 25 ° C TJ = 150 ° C 100 V DS = 15V 20µs PULSE WIDTH 4 5 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 10 100 Fig 2. Typical Output Characteristics 1000 3 1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 2 20µs PULSE WIDTH TJ = 150 °C 10 0.1 100 VDS , Drain-to-Source Voltage (V) 10 VGS 7.00V 5.00V 4.50V 3.50V 3.00V 2.70V 2.50V BOTTOM 2.25V TOP TOP 6 ID = 110A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 4.5V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C) Fig 4. Normalized On-Resistance Vs. Temperature IRL3502SPbF VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 6000 Ciss 4000 Coss 2000 Crss 0 1 10 15 VGS , Gate-to-Source Voltage (V) C, Capacitance (pF) 8000 VDS = 16V 12 9 6 3 0 100 ID = 64A 0 VDS , Drain-to-Source Voltage (V) 40 80 120 160 QG , Total Gate Charge (nC) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 1000 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 100 I D , Drain Current (A) 10us TJ = 150 ° C TJ = 25 ° C 10 0.5 V GS = 0 V 1.0 100us 100 1.5 2.0 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 2.5 1ms 10 TC = 25 ° C TJ = 150 ° C Single Pulse 1 10ms 10 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 100 IRL3502SPbF 120 EAS , Single Pulse Avalanche Energy (mJ) 800 LIMITED BY PACKAGE ID , Drain Current (A) 100 80 60 40 20 0 25 50 75 100 125 TC , Case Temperature ( °C) 150 Fig 9. Maximum Drain Current Vs. Case Temperature TOP BOTTOM 600 ID 29A 40A 64A 400 200 0 25 50 75 100 125 Starting TJ , Junction Temperature ( °C) 150 Fig 10. Maximum Avalanche Energy Vs. Drain Current Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.1 0.01 0.00001 0.10 0.05 0.02 0.01 PDM t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1 0.014 RDS (on) Drain-to-Source On Resistance ( Ω ) RDS (on) Drain-to-Source On Resistance ( Ω ) IRL3502SPbF 0.012 0.010 0.008 VGS = 4.5V 0.006 VGS = 7.0V 0.004 0 100 200 300 A 400 I D , Drain Current (A) Fig 12. On-Resistance Vs. Drain Current 0.010 0.008 I D = 64A 0.006 0.004 2.0 3.0 4.0 5.0 6.0 7.0 V GS , Gate-to-Source Voltage (V) Fig 13. On-Resistance Vs. Gate Voltage 8.0 A IRL3502SPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information (Lead-Free) T H IS IS AN IR F 5 3 0 S W IT H L OT CODE 80 2 4 AS S E M B L E D ON W W 0 2, 20 00 IN T H E AS S E M B L Y L IN E "L " IN T E R N AT IO N AL R E C T IF IE R L OGO N ote: "P " in as s em bly lin e po s itio n in dicates "L ead-F r ee" P AR T N U M B E R F 5 30 S AS S E M B L Y L O T CO D E OR IN T E R N AT IO N AL R E C T IF IE R L OG O AS S E M B L Y L OT CO D E P AR T N U M B E R F 530 S D AT E C O D E P = D E S IGN AT E S L E AD -F R E E P R O D U C T (O P T IO N AL ) Y E AR 0 = 2 0 0 0 WE E K 02 A = AS S E M B L Y S IT E C O D E D AT E C O D E Y E AR 0 = 2 0 0 0 W E E K 02 L IN E L IRL3502SPbF D2Pak Tape & Reel Infomation Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 1.65 (.065) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 1.75 (.069) 1.25 (.049) 10.90 (.429) 10.70 (.421) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.03/04 Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/
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