IRLHS6376TRPBF

IRLHS6376PbF HEXFET® Power MOSFET 30 V VGS ±12 V RDS(on) max 63 mΩ '  S2  ' D1 D1  *  D2 6  A G2 D2 7 )( d  ' 3.4 7 )( (@Tc(Bottom) = 25°C) mΩ  ' ID 82   * RDS(on) max (@VGS = 2.5V)  6 (@VGS = 4.5V) : ,( 9 3 2 7 VDS G1 S1 2mm x 2mm Dual PQFN Applications • Charge and discharge switch for battery application • Load/System Switch Features and Benefits Features Low RDSon (≤ 63mΩ) Low Thermal Resistance to PCB (≤ 19°C/W) Low Profile (≤ 1.0mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen Orderable part number Package Type IRLHS6376TRPBF IRLHS6376TR2PBF PQFN Dual 2mm x 2mm PQFN Dual 2mm x 2mm Resulting Benefits Lower Conduction Losses Enable better thermal dissipation results in Increased Power Density ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Standard Pack Form Quantity Tape and Reel 4000 Tape and Reel 400 Note EOL notice #259 Absolute Maximum Ratings Parameter Max. VDS Drain-to-Source Voltage VGS ID @ TA = 25°C Gate-to-Source Voltage Continuous Drain Current, VGS @ 4.5V ±12 3.6 ID @ TA = 70°C Continuous Drain Current, VGS @ 4.5V ID @ TC(Bottom) = 25°C Continuous Drain Current, VGS @ 4.5V 2.9 7.6 ID @ TC(Bottom) = 100°C Continuous Drain Current, VGS @ 4.5V ID @ TC(Bottom) = 25°C Continuous Drain Current, VGS @ 4.5V (Package Limited) Pulsed Drain Current IDM PD @TC(Bottom) = 25°C TJ Linear Derating Factor Operating Junction and TSTG Storage Temperature Range Units V d d d 3.4d 4.9 c f Power Dissipation f PD @TA = 25°C 30 Power Dissipation 30 1.5 6.6 f A 0.012 -55 to + 150 W W/°C °C Notes  through † are on page 2 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback January 21, 2014 IRLHS6376PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. 30 ––– ––– Breakdown Voltage Temp. Coefficient ––– 0.023 ––– Static Drain-to-Source On-Resistance ––– 48 63 ––– 61 82 BVDSS Drain-to-Source Breakdown Voltage ∆ΒVDSS/∆TJ RDS(on) Max. Units V V/°C Reference to 25°C, ID = 1mA mΩ VGS(th) Gate Threshold Voltage 0.5 0.8 1.1 V ∆VGS(th) Gate Threshold Voltage Coefficient ––– -3.6 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1.0 ––– ––– 150 Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 gfs Qg Forward Transconductance 8.8 ––– ––– Total Gate Charge ––– 2.8 ––– IGSS h h h Qgs Gate-to-Source Charge ––– 0.13 ––– Qgd Gate-to-Drain Charge ––– 1.1 ––– RG td(on) Gate Resistance Turn-On Delay Time ––– ––– 4.6 4.4 ––– ––– tr Rise Time ––– 11 ––– td(off) Turn-Off Delay Time ––– 11 ––– tf Fall Time ––– 9.4 ––– Ciss Input Capacitance ––– 270 ––– Coss Output Capacitance ––– 32 ––– Crss Reverse Transfer Capacitance ––– 20 ––– Min. Typ. Conditions VGS = 0V, ID = 250µA µA nA VGS = 4.5V, ID = 3.4A VGS = 2.5V, ID = 3.4A ed ed VDS = VGS, ID = 10µA VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125°C VGS = 12V VGS = -12V d S VDS = 10V, ID = 3.4A VDS = 15V nC VGS = 4.5V d (See Fig.17 & 18) ID = 3.4A Ω ns VDD = 10V, VGS = 4.5V ID = 3.4A d RG=1.8Ω See Fig.15 VGS = 0V pF VDS = 25V ƒ = 1.0MHz Diode Characteristics Parameter IS Continuous Source Current Max. Units d ––– ––– ––– ––– 30 Diode Forward Voltage ––– ––– 1.2 trr Reverse Recovery Time ––– 8.0 12 ns Qrr Reverse Recovery Charge ––– 5.9 8.9 nC ton Forward Turn-On Time (Body Diode) Pulsed Source Current ISM (Body Diode)c VSD Conditions MOSFET symbol 7.6 A V D showing the integral reverse G p-n junction diode. TJ = 25°C, IS = 3.4A , VGS = 0V TJ = 25°C, IF = 3.4A , VDD = 15V di/dt = 260A/µs e d d S e Time is dominated by parasitic Inductance Thermal Resistance RθJC (Bottom) RθJC (Top) RθJA RθJA (