SPD11N10

SPD11N10 SPU11N10 Preliminary data SIPMOS Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated VDS 100 RDS(on) 170 m
ID 10.5 A P-TO251 Type Package Ordering Code Marking SPD11N10 P-TO252 Q67042-S4121 11N10 SPU11N10 P-TO251 Q67042-S4122 11N10 V P-TO252 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Value A TC=25°C 10.5 TC=100°C 7.8 Pulsed drain current ID puls Unit 41.2 TC=25°C EAS 60 mJ dv/dt 6 kV/µs Gate source voltage VGS ±20 V Power dissipation Ptot 50 W -55... +175 °C Avalanche energy, single pulse ID =10.5 A , VDD =25V, RGS =25
Reverse diode dv/dt IS =10.5A, VDS =80V, di/dt=200A/µs, Tjmax =175°C TC=25°C Operating and storage temperature Tj , Tstg IEC climatic category; DIN IEC 68-1 55/175/56 Page 1 2002-01-31 SPD11N10 SPU11N10 Preliminary data Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 3 Thermal resistance, junction - ambient, leaded RthJA - - 100 SMD version, device on PCB: RthJA - - 75 - - 50 @ min. footprint @ 6 cm 2 cooling area 1) K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS 100 - - VGS(th) 2.1 3 4 Static Characteristics Drain-source breakdown voltage V VGS =0V, ID =1mA Gate threshold voltage, VGS = VDS ID = 21 µA Zero gate voltage drain current µA IDSS VDS =100V, VGS =0V, Tj =25°C - 0.01 1 VDS =100V, VGS =0V, Tj =125°C - 1 100 IGSS - 1 100 nA RDS(on) - 137 170 m
Gate-source leakage current VGS =20V, VDS=0V Drain-source on-state resistance VGS =10V, ID =7.8A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2002-01-31 SPD11N10 SPU11N10 Preliminary data Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. 2.6 5.8 - S pF Dynamic Characteristics Transconductance gfs VDS
2*ID *RDS(on)max , ID =7.8A Input capacitance Ciss VGS =0V, VDS =25V, - 320 400 Output capacitance Coss f=1MHz - 72 90 Reverse transfer capacitance Crss - 43 54 Turn-on delay time td(on) VDD =50V, VGS=10V, - 8.2 10 Rise time tr ID =10.5A, RG =28 - 46 58 Turn-off delay time td(off) - 29 36 Fall time tf - 23 29 - 2.3 2.9 - 7.8 9.8 - 14.6 18.3 V(plateau) VDD =80V, ID=10.5A - 6.4 - V IS - - 10.5 A - - 41.2 ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD =80V, ID =10.5A VDD =80V, ID =10.5A, nC VGS =0 to 10V Gate plateau voltage Reverse Diode Inverse diode continuous TC=25°C forward current Inverse diode direct current, ISM pulsed Inverse diode forward voltage VSD VGS =0V, IF =10.5A - 0.93 1.25 V Reverse recovery time trr VR =50V, IF =lS , - 57 71 ns Reverse recovery charge Qrr diF /dt=100A/µs - 134 167 nC Page 3 2002-01-31 SPD11N10 SPU11N10 Preliminary data 1 Power dissipation 2 Drain current Ptot = f (TC ) ID = f (TC ) 55 parameter: VGS  10 V SPD11N10 12 A W 10 45 9 40 8 35 ID Ptot SPD11N10 7 30 6 25 5 20 4 15 3 10 2 5 1 0 0 20 40 60 80 0 0 100 120 140 160 °C 190 20 40 60 80 100 120 140 160 °C 190 TC TC 3 Safe operating area 4 Transient thermal impedance ID = f ( VDS ) ZthJC = f (tp ) parameter : D = 0 , TC = 25 °C parameter : D = tp /T 10 10 1 2 SPD11N10 SPD11N10 K/W tp = 4.9µs DS /I D A 10 0 DS ( R ID 10 1 Z thJC on ) = V 10 µs 10 -1 100 µs D = 0.50 10 10 -2 0.20 1 ms 0 0.10 0.05 single pulse 10 ms DC 0.02 10 -3 0.01 10 -1 0 10 10 1 10 2 V 10 3 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp VDS Page 4 2002-01-31 SPD11N10 SPU11N10 Preliminary data 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS ); Tj=25°C RDS(on) = f (ID ) parameter: tp = 80 µs parameter: VGS 25 400 h g m
VGS[V]= f 15 e a= 5 b= 5.5 c= 6 d= 6.5 e= 7 f= 8 g= 9 h= 10 RDS(on) ID A a b c d e f 300 250 g 200 h 10 d 150 c a= 5 b= 5.5 c= 6 d= 6.5 VGS[V]= 100 5 b 50 e= 7 f= 8 g= 9 h= 10 a 0 0 2 4 6 8 10 V 0 0 13 4 8 12 16 20 28 A ID VDS 7 Typ. transfer characteristics 8 Typ. forward transconductance ID= f ( VGS ); VDS 2 x ID x RDS(on)max parameter: tp = 80 µs gfs = f(ID ); Tj=25°C parameter: gfs 7 12 S A 5 ID g fs 8 4 6 3 4 2 2 0 0 1 1 2 3 4 5 0 0 7 V 1 2 3 4 5 6 7 8 A 10 ID VGS Page 5 2002-01-31 SPD11N10 SPU11N10 Preliminary data 9 Drain-source on-state resistance 10 Typ. gate threshold voltage RDS(on) = f (Tj ) VGS(th) = f (Tj) parameter : ID = 7.8 A, VGS = 10 V parameter: VGS = VDS SPD11N10 4 750 m
V ID =1mA 550 VGS(th) RDS(on) 600 500 450 3 400 350 2.5 300 250 98% 200 typ 150 2 ID =21µA 100 50 0 -60 -20 20 60 100 140 °C 1.5 -65 200 -35 -5 25 55 85 115 Tj °C 175 Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (VDS) IF = f (VSD ) parameter: VGS =0V, f=1 MHz parameter: Tj , tp = 80 µs 10 3 10 2 SPD11N10 A pF Ciss C IF 10 1 10 2 Coss 10 0 Crss Tj = 25 °C typ Tj = 175 °C typ Tj = 25 °C (98%) Tj = 175 °C (98%) 10 1 0 5 10 15 20 25 30 V 40 10 -1 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD VDS Page 6 2002-01-31 SPD11N10 SPU11N10 Preliminary data 13 Typ. avalanche energy 14 Typ. gate charge EAS = f (Tj ) VGS = f (QGate ) par.: ID = 10.5 A , VDD = 25 V, RGS = 25
parameter: ID = 10.5 A pulsed 60 16 SPD11N10 mJ V 50 12 VGS EAS 45 40 0,2 VDS max 10 0,8 VDS max 35 30 8 25 6 20 15 4 10 2 5 0 25 45 65 85 105 125 145 °C 185 0 0 4 8 12 16 nC 24 QGate Tj 15 Drain-source breakdown voltage V(BR)DSS = f (Tj ) SPD11N10 120 V (BR)DSS V 114 112 110 108 106 104 102 100 98 96 94 92 90 -60 -20 20 60 100 140 °C 200 Tj Page 7 2002-01-31 Preliminary data SPD11N10 SPU11N10 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 8 2002-01-31