TLE4998S8(D)
High Performance Programmable Single/Dual Linear Hall Sensor
Data Sheet
Revision 1.1, 2017-07
Sense & Control
Edition 2017-07
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2017 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
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approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
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TLE4998S8(D)
Table of Contents
Table of Contents
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1
1.1
1.2
1.3
Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Target Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4
4
5
5
2
2.1
2.2
2.3
2.4
General . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Principle of Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Transfer Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6
6
6
7
7
3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4
Operating Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5
5.1
5.2
5.3
5.4
Electrical, Thermal and Magnetic Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Magnetic Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical and Magnetic Characteristics in Undervoltage Range . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Magnetic Field Direction Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6
Application Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
7
7.1
7.2
SENT Output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
SENT Protocol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Unit Time Setup . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
8
Configuration and Calibration Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
9
9.1
9.2
Error Detection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Voltages Outside the Operating Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
EEPROM Error Correction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
10
10.1
10.2
10.3
PG-TDSO-8 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Distance Chip to package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Moisture Sensitivity Level (MSL) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PG-TDSO-8 Package Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Data Sheet
3
10
10
11
12
12
20
20
20
21
Revision 1.1, 2017-07
TLE4998S8(D)
Overview
1
Overview
Characteristic
Supply Voltage
Supply Current
Magnetic Range
Interface
Temperature
Programmable
Single/Dual Die
Linear Hall
Sensor
4.5~5.5 V
6 mA
±50mT
±100mT
±200mT
SENT (Single
Edge Nibble
Transmission)
Open Drain Output
-40°C to
125°C
Figure 1-1
1.1
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
SMD package PG-TDSO-8 for the TLE4998S8(D)
Features
Integration of two individual Linear Hall sensor IC’s with Single Edge Nibble Transmission (SENT) open-drain
output signal (SAE J2716)
20-bit Digital Signal Processing (DSP)
Digital temperature and stress compensation
16-bit overall resolution
Operating automotive temperature range -40°C to 125°C
Minimal drift of output signal over temperature and lifetime
Programmable parameters stored in EEPROM with single-bit error correction:
– SENT unit time
– Magnetic range, sensitivity (gain), offset, and polarity of the output slope
– Filter Bandwidth
– Clamping levels
– Customer temperature compensation coefficients for all common magnets
Re-programmable until memory lock
Supply voltage 4.5-5.5 V (4.1-16 V extended range)
Configurable magnetic range: ±50 mT, ±100 mT, or ±200 mT
Reverse-polarity and overvoltage protection for all pins
Output short-circuit protection
On-board diagnostics (overvoltage, EEPROM error)
Output of internal magnetic field values and temperature
Programming and operation of multiple sensors with common power supply
Two-point calibration of magnetic transfer function without iteration steps
Note: Product qualification is based on “AEC Q100 Rev. G” grade 1 (Automotive Electronics Council - Stress test
qualification for integrated circuits)
Table 1-1
Ordering Information
Product Name
Marking
Ordering Code
Package
TLE4998S8
S8S
SP000902780
single sensor, PG-TDSO-8-1
TLE4998S8D
S8D
SP000902784
dual sensor, PG-TDSO-8-2
Data Sheet
4
Revision 1.1, 2017-07
TLE4998S8(D)
Overview
1.2
•
•
•
Target Applications
Robust replacement of potentiometers: No mechanical abrasion, resistant to humidity, temperature, pollution
and vibration
Linear and angular position sensing in automotive and industrial applications with highest accuracy
requirements
Suited for safety applications such as pedal position, throttle position and steering torque sensing
1.3
Pin Configuration
Figure 1-2 shows the location of the Hall elements in the package and the pin configuration of the TLE4998S8(D).
Figure 1-2
Pin Configuration of PG-TDSO-8 package
Table 1-2
TLE4998S8(D) Pin Definitions and Functions
Pin No.
Symbol
TLE4998S8 Function
TLE4998S8D Function
1
TST
Test pin (connection to GND is
recommended)
Test pin (top die, connection to GND is
recommended)
2
VDD
Supply voltage / programming interface
Supply voltage / programming interface
(top die)
3
GND
Ground
Ground (top die)
4
OUT
Output / programming interface
Output / programming interface (top die)
5
OUT
Not connected
Output / programming interface (bottom
die)
6
GND
Not connected
Ground (bottom die)
7
VDD
Not connected
Supply voltage / programming interface
(bottom die)
8
TST
Not connected
Test pin (bottom die, connection to GND is
recommended)
Data Sheet
5
Revision 1.1, 2017-07
TLE4998S8(D)
General
2
General
All further given specifications are regarded to both implemented sensor IC’s, or otherwise noted.
2.1
Block Diagram
Figure 2-1 shows is a simplified block diagram.
VDD
Bias
spinning
HALL
Supply
A
EEPROM
Interface
TST
D
OUT
Temp.
Sense
Stress
Sense
DSP
A
SENT
D
GND
ROM
Figure 2-1
2.2
Block Diagram of the TLE4998S8(D) with the SENT interface
Functional Description
The linear Hall IC TLE4998S8(D) has been designed specifically to meet the requirements of highly accurate angle
and position detection.
The sensor provides a digital SENT signal based on the SAE J2716 standard, which consists of a sequence of
pulses. Each transmission consists of multiple data nibbles containing the Hall value, the temperature and status
information of the sensor.
The output stage is an open-drain driver pulling the output pin to low only. Therefore, the high level needs to be
obtained by an external pull-up resistor. This output type has the advantage that the receiver may use an even
lower supply voltage (e.g. 3.3 V). In this case the pull-up resistor must be connected to the given receiver supply.
The IC is produced in BiCMOS technology with high voltage capability and it also has reverse-polarity protection.
Digital signal processing using a 16-bit DSP architecture together with digital temperature and stress
compensation guarantees excellent stability over the whole temperature range and life time.
Data Sheet
6
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TLE4998S8(D)
General
2.3
•
•
•
•
•
•
•
•
•
Principle of Operation
A magnetic flux is measured by a Hall-effect cell
The output signal from the Hall-effect cell is converted from analog to digital signals
The chopped Hall-effect cell and continuous-time A/D conversion ensure a very low and stable magnetic offset
A programmable low-pass filter to reduce noise
The temperature is measured and A/D converted
Temperature compensation is done digitally using a second-order function
Digital processing of the output value is based on zero field and sensitivity value
The output value range can be clamped by digital limiters
The final output value is represented by the data nibbles of the SENT protocol
2.4
Transfer Functions
The examples in Figure 2-2 show how different magnetic field ranges can be mapped to the desired output value
ranges.
•
•
Polarity Mode:
– Bipolar: Magnetic fields can be measured in both orientations. The limit points do not necessarily have to
be symmetrical around the zero field point
– Unipolar: Only north- or south-oriented magnetic fields are measured
Inversion: Both gain can be set to positive values, negative values or positive/negative values.
B (mT)
OUT12 /
OUT16
50
4095 /
100
65535
0
0
-50
Data Sheet
4095 /
65535
0
0
-100
Example 1:
- Bipolar
Figure 2-2
OUT12 /
OUT16
B (mT)
B (mT)
OUT12 /
OUT16
200
4095 /
65535
0
0
-200
Example 2:
- Unipolar
- Big offset
Example 3:
- Bipolar
- Inverted (neg. gain)
Examples of Operation
7
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TLE4998S8(D)
Maximum Ratings
3
Maximum Ratings
All further given specifications are regarded to each of the implemented sensors IC’s, or otherwise noted.
Table 3-1
Absolute Maximum Ratings
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Note / Test Condition
Junction temperature
TJ
- 40
–
1601)
°C
–
Voltage on VDD pin with respect to
ground
VDD
-18
–
18.35
V
2)3)
Supply current @ overvoltage VDD max. IDDov
–
–
15
mA
–
Reverse supply current @ VDD min.
-1
–
0
mA
–
V
–
IDDrev
Voltage on output pin with respect to
ground
VOUT
-1
Magnetic field
BMAX
ESD protection
VESD
4)
5)
–
18.35
-
–
1
T
–
–
–
±2
kV
According HBM
ANSI/ESDA/JEDEC
JS-001
1) For limited time of 96 h. Depends on customer temperature lifetime cycles. Please aks Infineon for support.
2) Higher voltage stress than absolute maximum rating, e.g. 150% in latch-up tests is not applicable. In such cases, Rseries
≥100 Ω for current limitation is required.
3) Max 1h, in operating temperature range.
4) IDD can exceed 10 mA when the voltage on OUT is pulled below -1 V (-5 V at room temperature).
5) VDD = 5 V, open drain permanent low, for max. 10 minutes
Attention: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational sections of this specification
is not implied. Furthermore, only single error cases are assumed. More than one stress/error
case may also damage the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. During absolute maximum rating overload conditions the voltage on VDD pins with
respect to ground (VSS) must not exceed the values defined by the absolute maximum ratings.
Data Sheet
8
Revision 1.1, 2017-07
TLE4998S8(D)
Operating Range
4
Operating Range
The following operating conditions must not be exceeded in order to ensure correct operation of the
TLE4998S8(D). All parameters specified in the following sections refer to these operating conditions and each of
the implemented sensors IC’s if applicable or unless otherwise indicated.
Table 4-1
Operating Range
Parameter
Symbol
Supply voltage
VDD
Values
Min.
Typ.
Max.
4.5
–
5.5
4.1
3)
1)2)
Unit
Note / Test Condition
V
–
V
Extended range
–
16
–
4.1
V
Undervoltage range, reduced
magnetic performance (see
Table 5-3)
Supply undervoltage
VDDuv
VDDpon
Output pull-up voltage4)
Vpull-up
–
–
18.35
V
–
RL
1
–
–
kΩ
–
Iout
0
–
5
mA
–
CL
1
–
8
nF
–
TA
-40
–
125
°C
max. 1200 h at 125°C6)
4)
Load resistance
4)
Output current
4)
Load capacitance
5)
Ambient temperature
1) For supply voltages > 12 V, a series resistance Rseries ≥100 Ω is recommended
2) The open drain switch off, due to overvoltage on the VDD line, can take place in the range of 16.65 V to 18.35 V, as defined
in Chapter 9.1 of the data sheet.
3) VDDpon ... power-on reset level, see Table 5-1
4) Output protocol characteristics depend on these parameters, RL must be according to max. output current
5) RTHja ≤ 150 K/W.
6) Maximum exposure time at other ambient temperatures between -40°C and 125°C shall be calculated based on the values
specified in this table using the Arrhenius model.
Note: Keeping signal levels within the limits specified in this table ensures operation without overload conditions.
Data Sheet
9
Revision 1.1, 2017-07
TLE4998S8(D)
Electrical, Thermal and Magnetic Parameters
5
Electrical, Thermal and Magnetic Parameters
All specification values are valid over temperature and lifetime, unless noted otherwise.
5.1
Electrical Characteristics
Table 5-1
Electrical Characteristics
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
Typ.
Max.
IDD
3
6
8
mA
per die
RthJA
–
150
–
K/W
junction to air
RthJC
–
85
–
K/W
junction to case
tPon
–
0.7
2
ms
≤ ±5% target out value
–
15
20
VDDpon
3.1
3.5
3.9
V
Output impedance
ZOUT
20
40
70
kΩ
Output fall time
tfall
2
3.5
5
μs
VOUT 4.5 V to 0.5 V4)
Output rise time
trise
–
20
–
μs
VOUT 0.5 V to 4.5 V4)
Output low saturation
voltage
VOUTsat
–
0.3
0.6
V
IOUTsink= 5 mA
–
0.2
0.4
V
IOUTsink= 2.2 mA
Output noise (rms)
OUTnoise
–
–
2
LSB12
With LP filter setting, from 80 Hz
until 1390 Hz5)
Oscillator frequency
variation
∆f / f
-20
–
20
%
Nominal oscillator frequency:
8MHz
Supply current
1)
Thermal resistance
2)
Power-on time
Power-on reset level
3)
≤ ±1% target out value
1) Values derived from a simulation with a 4-layer PCB
2) Response time to set up output data at power on when a constant field is applied. The first value given has a ±5% error,
the second value has a ±1% error.
3) Power-on and power-off
4) Depends on External RL and CL, See Figure 5-1
5) Range ±50 mT (also valid for ranges ±100 mT and ±200 mT), Gain 1.0 (scales linearly with gain)
VOUT
*)
t HIGH
tlow
VDD
90% VDD
10% VDD
VOUTsat
*)
tfall
Figure 5-1
Data Sheet
RL to VDD assumed
trise
t
Output Characteristic
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Revision 1.1, 2017-07
TLE4998S8(D)
Electrical, Thermal and Magnetic Parameters
Calculation of the Junction Temperature
The internal power dissipation PTOT of the sensor increases the chip junction temperature above the ambient
temperature.
The power multiplied by the total thermal resistance RthJA (Junction to Ambient) added to TA leads to the final
junction temperature. RthJA is the sum of the addition of the two components, Junction to Case and Case to
Ambient.
RthJA = RthJC + RthCA
TJ = TA + ∆T = RthJA x PTOT = RthJA x ( VDD x IDD + VOUT x IOUT ); IDD, IOUT > 0, if direction is into IC
Example (assuming no load on VOUT and TLE4998S8(D) type):
•
•
•
VDD = 5 V
IDD = 8 mA
∆T= 150[K/W] x (5 [V] x 0.008 [A] + 0 [VA]) = 6 K per silicon
For molded sensors, the calculation with RthJC is more adequate.
5.2
Magnetic Characteristics
Table 5-2
Magnetic Characteristics
Parameter
Symbol
1)
Values
Unit
Note / Test Condition
programmable2)
Min.
Typ.
Max.
±8.2
–
±245
LSB12/mT
Sensitivity
S
Sensitivity drift
∆S
-2.0
–
+2.0
%
Magnetic field range
MFR
±50
±100
±200
mT
programmable3)4)
Integral nonlinearity
INL
–
±2.0
±4.1
LSB12
5)
Magnetic offset
BOS
–
-
±400
μT
Error band6)
Magnetic offset drift
∆BOS
–
±1
±5
μT/°C
Magnetic hysteresis
BHYS
–
–
20
10
μT
in 50mT range
in 100mT range
1)
2)
3)
4)
Defined as ∆OUT / ∆B.
Programmable in steps of 0.024%.
Depending on offset and gain settings, the output may already be saturated at lower fields.
The sensor offset is trimmed during production. The offset register is set to 50% and the offset is tested at room
temperature. Maximum tolerance is ±0,3%=±197LSB from the full output range (16bit) of the digital register DOUT.
5) Range ±50 mT (also valid for ranges ±100 mT and ±200 mT), Gain = 1.0 (scales linearly with gain).
6) In operating temperature range and over lifetime, in 50mT range.
Data Sheet
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TLE4998S8(D)
Electrical, Thermal and Magnetic Parameters
5.3
Electrical and Magnetic Characteristics in Undervoltage Range
Table 5-3
Electrical and Magnetic Characteristics in Supply Undervoltage Range
Parameter
Symbol
Values
Unit
Min.
Typ.
Max.
Note / Test Condition
Sensitivity drift
SE(T)
–
–
+2.5/-7.5 %
Magnetic offset drift
∆BOS
–
–
±400
μT
Integral nonlinearity
INL
–
–
±8.2
LSB12
1)
Output noise (rms)
OUTnoise –
–
8
LSB12
With LP filter setting, from 80 Hz
until 1390 Hz1)
1) Range ±50 mT (also valid for ranges ±100 mT and ±200 mT), Gain = 1.0 (scales linearly with gain)
5.4
Magnetic Field Direction Definition
Figure 5-2 shows the definition of the magnetic field direction. By standard the south pole field defines the positive
field values of the top die of the TLE4998S8(D).
TLE4998x8D (dual die):
TLE4998 x8 (single die):
N
Top Die
S
N
Branded Side
S
Branded Side
Bottom Die
Figure 5-2
Definition of magnetic field direction of the PG-TDSO-8
For the TLE4998S8D, the bottom die measures the inverted field value of the top die. This leads to a default output
characteristic as shown in Figure 5-3.
Data Sheet
12
Revision 1.1, 2017-07
TLE4998S8(D)
Electrical, Thermal and Magnetic Parameters
Output [LSB16]
65535
Dual Die Top / Single Die
Dual Die Bottom
32768
0
-50
Figure 5-3
Data Sheet
-32
0
Magnetic Flux B [mT]
32
50
Example of the dual die output characteristic (range 50 mT, gain 1.0, typical)
13
Revision 1.1, 2017-07
TLE4998S8(D)
Application Circuit
6
Application Circuit
Figure 6-1shows the connection of two Linear Hall sensors to a micro controller.
Sensor
Module
Voltage Supply
Sensor
ECU
Module
Voltage Supply
µC
µC
VDD
VDD
47nF
TLE out
4998
Vdd
2k2
OUT1
GND
50
CCin1
1nF
4.7nF
GND
VGND
CCin2
2k2
V DD
47nF
TLE out
4998
OUT2
50
GND
1nF
4.7nF
Figure 6-1
Application Circuit
Note: For calibration and programming, the interface has to be connected directly to the OUT pin.
The application circuit shown should be regarded as an example only. It will need to be adapted to meet the
requirements of other specific applications. Further information is given in Chapter 7.
Data Sheet
14
Revision 1.1, 2017-07
TLE4998S8(D)
SENT Output
7
SENT Output
The sensor supports a basic version of the Single Edge Nibble Transmission (SENT) protocol defined by SAE
J2716. The main difference between the standard version and its implementation in the TLE4998 is the usage of
an open drain instead of a push-pull output.
7.1
SENT Protocol
The single edge is defined by a 3 unit time (UT) low pulse on the output, followed by the high time defined in the
protocol (nominal values, may vary by tolerance of internal RC oscillator and the programming, see Chapter 7.2).
All values are multiples of a configurable unit time. A transfer consists of the following parts:
•
•
•
•
A synchronization period of 56 UT (in parallel, a new sample is calculated)
A status nibble of 12-27 UT
Between 3 and 6 data nibbles of 12-27 UT each (number is programmable, see Table 7-1), representing the
Hall value and temperature information.
A CRC nibble of 12-27 UT
Sensor processing
compensate the sample
transfer compensated sample
Output pin (physical)
Next sampe
Sampling point:
values taken from
decimation filter
register
Transferred data (logical)
Status
nibble
sync. period
Figure 7-1
Data
nibble 1
high
Data
nibble 1
mid
Data
nibble 2
low
CRC
nibble
SENT Frame
The number of transmitted SENT nibbles is programmable to customize the amount of information sent by the
sensor. The frame contains a 16 bit Hall value and an 8bit temperature value in the default configuration.
Table 7-1
Frame Selection
Frame Type
Parameter F
Data Nibbles
16 bit Hall, 8 bit temperature
0
6 nibbles
16 bit Hall
1
4 nibbles
12 bit Hall, 8 bit temperature
2
5 nibbles
12 bit Hall
3
3 nibbles
The CRC checksum includes the status nibble and the data nibbles and can be used to check the validity of the
decoded data. It is calculated using a polynomial x4 +x3 + x2 + 1 with a seed value of 0101. The calculation scheme
of the CRC is described in detail in the TLE4998 User’s Manual. The sensor’s sampling time is at the beginning
of the synchronization period. The temperature is coded as an 8 bit value. The value is transferred in unsigned
integer format and corresponds to the range between -55 °C and +200 °C, so a transferred value of 55
corresponds to 0 °C. The temperature is additional information and although it is not calibrated, may be used for
a plausibility check, for example. Table 7-2 shows the mapping between junction temperature and the transmitted
value in the SENT frame.
Data Sheet
15
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TLE4998S8(D)
SENT Output
Table 7-2
Mapping of Temperature Value
Junction Temperature
Typ. Decimal Value from Sensor
Note
- 55 °C
0
Theoretical lower limit1)
0 °C
55
–
25 °C
80
–
200 °C
255
Theoretical upper limit1)
1) Theoretical range of temperature values, exceeding absolute maximum ratings.
The status nibble as defined in the SAE standard has two free bits (the LSBs or first and second bit). These bits
contain the selected magnetic range of the sensor and therefore allow the received data to be interpreted easily.
As no serial data is transferred with the IC, the remaining bits of the status nibble are not required. Instead, these
bits are used to signal startup or overvoltage condition, as shown in Figure 7-2.
In case of startup- or supply overvoltage condition, the open-drain stage is disabled (high ohmic) and the
corresponding status bits are set. After VDD has returned to the normal operating range, this status information
will be transmitted within the first SENT transmission.
In case of an incorrectable EEPROM failure, the open-drain stage is disabled and is kept in “switched off” state
permanently (high ohmic/ sensor defect).
7.2
Unit Time Setup
The basic SENT protocol unit time granularity is defined as 3 μs. Every timing is a multiple of this basic time unit.
To achieve more flexibility, trimming of the unit time can be used to:
•
•
Allow a calibration trim within a timing error of less than 20% clock error (as given in SAE standard)
Allow a modification of the unit time for small speed adjustments
Table 7-3
Pre-divider Setting
Parameter
Unit time
Symbol
tUNIT
Values
Min.
Typ.
Max.
2.0
–
3.88
Unit
Note / Test Condition
μs
ClkUNIT=8 MHz1)2)
1) Prediv default is decimal = 8 for 3 μs nominal SENT unit time
2) RC oscillator frequency variation ± 20%.
The nominal unit time is calculated by:
tUNIT = (Prediv + 16) / ClkUNIT
Clk UNIT = 8MHz ± 20%
Data Sheet
(7.1)
16
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TLE4998S8(D)
SENT Output
omitted if F[0] = 1*
omitted if F[1] = 1*
SYNC
bits
STATUS
H1
H2
H3
H4
T1
T2
description
CRC
description
state
state
status information
10
RR
startup condition in RR
01
RR
overvoltage in RR
00
RR
normal state in RR
CRC calculation
for all nibbles
seed value: 0101
polynomial: X4+X3 +X2+1
bits
description
11
+/- 50mT
01
+/- 100mT
00
+/- 200mT
bits
description1
description 2
decimal: OUT12
decimal: OUT16
( = H1*256 +H2*16 +H3 )
( = OUT12*16+H4 )
bits
description
T1
T2
decimal: TEMP8
65535 (FSR)
1111
1111
200 °C
65534
1111
1110
199 °C
4095
:
1111
:
:
0000
4095
65520
1111
0000
185 °C
1110
1111
4094
65519
1110
1111
184 °C
1110
1110
4094
65518
:
:
:
1111
1110
:
4094
:
0101
0000
25 °C
1111
1111
1110
0000
4094
65504
0100
1111
24 °C
1111
1111
1101
1111
4093
65503
:
:
:
:
:
:
:
:
:
0011
0111
0°C
0000
0000
0010
0000
2
32
0011
0110
-1°C
0000
0000
0001
1111
1
31
:
:
:
0000
0000
0001
:
1
:
0000
0001
-54 °C
0000
0000
0001
0000
1
16
0000
0000
-55 °C
0000
0000
0000
1111
0
15
0000
0000
0000
1110
0
14
0000
0000
0000
:
0
:
0000
0000
0000
0001
0
1
0000
0000
0000
0000
0
0
H1
H2
H3
H4
1111
1111
1111
1111
4095 (FSR)
1111
1111
1111
1110
4095
1111
1111
1111
:
1111
1111
1111
1111
1111
1111
1111
1111
* The number of nibbles is programmed
in the frame register F
Figure 7-2
Data Sheet
( = T1*16 + T2 )
Abbreviations:
SYNC – synchronization nibble
STATUS – status nibble
CRC – cyclic redundancy code nibble
FSR – full scale range
H1..4 – hall value
T1..2 – temperature value
OUT12 – 12 bit output value
OUT16 – 16 bit output value
TEMP8 – 8 bit temperature value
Content of a SENT Data Frame (8 Nibbles)
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TLE4998S8(D)
Configuration and Calibration Parameters
8
Configuration and Calibration Parameters
The TLE4998S8(D) has several configurable parameters which are stored in the EEPROM. These parameters
affect the internal data processing and compensation and the output protocol. This chapter gives an overview of
the parameters. A detailed description of all the parameters and the programming procedure is given in the
TLE4998 User’s Manual.
Table 8-1
TLE4998S8(D) Paramters
Parameter
Setting range
Note
Magnetic range
±50 mT
±100 mT
±200 mT
Magnetic input range of Hall ADC
Gain
-4.0...4.0
Gain value of +1.0 corresponds to typical 32
LSB12/mT sensitivity in 100 mT range (64
LSB12/mT in 50mT range)
Offset
-16384 LSB12 ... 16384 LSB12
Quantization step: 1 LSB12
Clamping low level
0 LSB16 ... 64512 LSB16
Quantization step: 1024 LSB16
(see Figure 8-1)
Clamping high level
1023 LSB16 ... 65535 LSB16
Quantization step: 1024 LSB16
Bandwidth
80 Hz
240 Hz
440 Hz
640 Hz
860 Hz
1100 Hz
1390 Hz
Off
Low-pass filter cut-off (-3 dB) frequency (see
Figure 8-2)
1st order temperature
coefficient TC1
-1000 ppm/°C ... 2500 ppm/°C
2)
2nd order temperature
coefficient TC2
-4 ppm/°C2 ... 4 ppm/°C2
3)
1)
SENT unit time1)
SENT protocol frames
see Chapter 7
16 bit Hall + 8 bit temperature
16 bit Hall
12 bit Hall + 8 bit temperature
12 bit Hall
see Chapter 7
1) Subject to oscillator variation ±20%.
2) Relative range to Infineon temperature pre-calibration, the maximum adjustable range is limited by the register-size and
depends on specific pre-calibrated TL setting, full adjustable range: -2441 to +5355 ppm/°C.
3) Relative range to Infineon temperature pre-calibration, the maximum adjustable range is limited by the register-size and
depends on specific pre-calibrated TQ setting, full adjustable range: -15 to +15 ppm/°C2.
Data Sheet
18
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TLE4998S8(D)
Configuration and Calibration Parameters
OUT (LSB16)
65535
Error range
OUTCH
55295
Operating range
OUTCL
10240
Error range
0
Bmax
Bmin
B (mT)
Figure 8-1
Clamping Example
0
Magnitude (dB)
-1
-2
-3
-4
-5
-6
101
2
10
10
3
Frequency (Hz)
Figure 8-2
Data Sheet
DSP Input Filter (Magnitude Plot)
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TLE4998S8(D)
Error Detection
9
Error Detection
Different error cases can be detected by the On-Board Diagnostics (OBD) and reported to the micro controller in
the status nibble (see Chapter 7).
9.1
•
•
Voltages Outside the Operating Range
Inside the ratings specified in Table 3-1 “Absolute Maximum Ratings” on Page 8
Outside the range specified in Table 4-1 “Operating Range” on Page 9
The output signals an error condition if VDD crosses the overvoltage threshold level.
Table 9-1
Overvoltage
Parameter
Symbol
Overvoltage threshold
9.2
VDDov
Values
Unit
Min.
Typ.
Max.
16.65
17.5
18.35
Note / Test Condition
V
EEPROM Error Correction
The parity method is able to correct a single bit in the EEPROM line. One other single bit error in another EEPROM
line can also be detected, but not corrected. In case there is an incorrectable EEPROM failure, the open drain
stage is disabled and permanently kept in off state (high ohmic/sensor defect).
Data Sheet
20
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TLE4998S8(D)
PG-TDSO-8 Package Outlines
10
PG-TDSO-8 Package Outlines
Figure 10-1
10.1
PG-TDSO-8 (PG-TDSO-Plastic Green Thin Dual Small Outline), Package Dimensions
Distance Chip to package
Figure 10-2 shows the distance of the chip surface to the PG-TDSO-8 surface.
TLE4998x8D (dual die):
Figure 10-2
10.2
TLE4998x8 (single die ):
Distance of chip surface to package surface
Moisture Sensitivity Level (MSL)
The PG-TDSO-8 fulfills the MSL level 3 according to IPC/JEDEC J-STD-033B.1.
Data Sheet
21
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TLE4998S8(D)
PG-TDSO-8 Package Outlines
10.3
PG-TDSO-8 Package Marking
Figure 10-3
Data Sheet
PG-TDSO-8 (PG-TDSO-Plastic Green Thin Dual Small Outline), Package Marking
22
Revision 1.1, 2017-07
TLE4998S8(D)
Revision History
Page or Item
Subjects (major changes since previous revision)
Revision 1.1, 2017-07
Page 10
Added Note / Test Condition to parameter Output noise (rms)
Page 12
Added Note / Test Condition to parameter Output noise (rms)
Page 14
Corrected typo in Chapter 7.1, 9 μs low pulse corrected to 3 unit time (UT)
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Data Sheet
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