TLE7258D
LIN Transceiver
TLE7258D
Data Sheet
Rev. 1.2, 2014-12-08
Automotive Power
TLE7258D
Table of Contents
1
Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3
3.1
3.2
Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Pin Assignment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
4
4.1
4.2
4.3
4.4
4.5
4.6
4.7
4.8
4.9
4.10
Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Operating Modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Normal Operation Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Standby Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Sleep Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Bus Wake-up Event . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Mode Transition via EN input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Over-Temperature Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Undervoltage Detection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
3.3 V and 5 V Logic Capability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Short Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
5
5.1
5.2
5.3
General Product Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Functional Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6
6.1
6.2
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Functional Device Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
7
7.1
7.2
7.3
7.4
7.5
7.6
7.7
Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Application Example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
ESD Susceptibility according to IEC61000-4-2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Transient Robustness according to ISO 7637-2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
LIN Physical Layer Compatibility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TxD Fail-Safe Input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RxD Pull-up Resistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Compatibility with other Infineon LIN Transceivers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
9
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Data Sheet
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Rev. 1.2, 2014-12-08
LIN Transceiver
TLE7258D
TLE7258D
1
Overview
PG-TSON-8
Features
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Single-wire LIN transceiver for transmission rates up to 20 kbps
Compliant to ISO 17987-4, LIN Specification 2.2A and SAE J2602
Compatible with MOST ECL and other single wire line driver
interfaces with very low transmission rate down to 0 bps
Very low current consumption in Sleep mode with wake-up capability
Very low leakage current on the BUS pin
Digital I/O levels compatible with 3.3 V and 5 V microcontrollers
TxD protected with state check after mode change to Normal
Operation mode
BUS short to VBAT protection and BUS short to GND handling
Over temperature protection and supply undervoltage detection
Very high ESD robustness, ± 10 kV according to IEC61000-4-2
Optimized for high electromagnetic compatibility (EMC);
Very low emission and high immunity to interference
Available in leadless PG-TSON-8 package
PG-TSON-8 package supports Automated Optical Inspection (AOI)
Green Product (RoHS compliant)
AEC Qualified
Description
The TLE7258D is a transceiver for the Local Interconnect Network (LIN) with integrated wake-up and protection
features. It is designed for in-vehicle networks using data transmission rates up to 20 kbps. The TLE7258D
operate as a bus driver between the protocol controller and the physical bus of the LIN network. Compliant to all
LIN standards and with a wide operational supply range the TLE7258D can be used in all automotive applications.
In Sleep mode the TLE7258D draws typically less than 10 μA of quiescent current while still being able to wakeup when detecting LIN bus traffic. The very low leakage current on the BUS pin makes the TLE7258D especially
suitable for partially supplied networks.
Based on the Infineon BiCMOS technology the TLE7258D provides excellent ESD robustness together with a very
high electromagnetic compatibility (EMC). The TLE7258D reaches a very low level of electromagnetic emission
(EME) within a broad frequency range and independent from the battery voltage. The TLE7258D is AEC qualified
and tailored to withstand the harsh conditions of the automotive environment.
Type
Package
Marking
TLE7258D
PG-TSON-8
7258D
Data Sheet
3
Rev. 1.2, 2014-12-08
TLE7258D
Block Diagram
2
Block Diagram
VS
7
Internal
Supply
VREF
2
EN
Rslave
REN
Wake
Receiver
Mode
Control
VREF
Over-temperature and
Over-current
Protection
6
Transmitter
BUS
4
TxD
Driver
1
Receiver
RxD
BUS
5
GND
RFFilter
VS/2
TLE7258D_BLOCK_DIAGRAM
Figure 1
Data Sheet
Block diagram
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Rev. 1.2, 2014-12-08
TLE7258D
Pin Configuration
3
Pin Configuration
3.1
Pin Assignment
RxD
1
8
N.C.
EN
2
7
VS
N.C.
3
6
BUS
TxD
4
5
GND
TLE7258D_PINNING
Figure 2
Pin configuration
3.2
Pin Definitions and Functions
Pin
Symbol
Function
1
RxD
Receive data output;
External pull-up necessary
Monitors the LIN bus signal in Normal Operation mode
Indicates a wake-up event in Standby mode
2
EN
Enable input;
Integrated pull-down resistor
Logical “high” to select Normal Operation mode
3
N.C.
Not Connected
4
TxD
Transmit data input;
Integrated pull-up current source
Logical “low” to drive a “dominant” signal on the LIN bus
5
GND
Ground
6
BUS
Bus input / output;
Integrated LIN slave termination
7
Vs
Battery supply input;
100 nF decoupling capacitor required
8
N.C.
Not Connected
PAD
–
Connect to PCB heat sink area. Do not connect to other voltage potential than GND
Data Sheet
5
Rev. 1.2, 2014-12-08
TLE7258D
Functional Description
4
Functional Description
The LIN interface is a single wire, bi-directional bus, used for in-vehicle networks. The TLE7258D LIN transceiver
is the interface between the microcontroller and the physical LIN Bus (see Figure 15). Data from the
microcontroller is driven to the LIN bus via the TxD input of the TLE7258D. The transmit data stream on the TxD
input is converted to a LIN bus signal with optimized slew rates in order to minimize the electromagnetic emission
level of the LIN network. The RxD output reads back the information from the LIN bus to the microcontroller. The
receiver has an integrated filter network to suppress noise from the LIN bus and to increase the electromagnetic
immunity level of the transceiver.
The LIN specification defines two valid bus states (see Figure 3):
•
•
“Dominant” state with the LIN bus voltage level near GND.
“Recessive” state with the LIN bus voltage pulled up to the supply voltage VS through the bus termination.
By setting the TxD input of the TLE7258D to a logical “low” signal, the transceiver generates a “dominant” level on
the BUS interface pin. The receiver reads back the signal on the LIN bus and indicates the “dominant” LIN bus
signal with a logical “low” level on the RxD output to the microcontroller. By setting the TxD input to logical “high”,
the transceiver sets the LIN interface pin to the “recessive” level. At the same time the “recessive” level on the LIN
bus is indicated by a logical “high” level on the RxD output.
Every LIN network consists of a master node and one or more slave nodes. To configure the TLE7258D for master
node applications, a termination resistor of 1 kΩ and a diode must be connected between the LIN bus and the
power supply VS (see Figure 15).
VCC
TxD
t
VS
Recessive
Recessive
Vth_REC
BUS
Vth_DOM
Dominant
t
VCC
RxD
t
TLE7258_LIN_COMMUNICATION
Figure 3
Data Sheet
LIN bus signals
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TLE7258D
Functional Description
4.1
Operating Modes
The TLE7258D has 3 major operation modes (see Figure 4):
•
•
•
Normal Operation mode
Standby mode
Sleep mode
Table 1
Operating modes
Mode
EN
TxD
RxD
LIN Bus Termination
Comments
Sleep
Low
Disabled1)
High2)
30 kΩ (typical)
No wake-up request detected
Standby
Low
High
3)
Low
High2)
30 kΩ (typical)
RxD “low” after a bus wake-up
RxD “high“ after power-up
Normal
Operation
High
Low
High
Low
High
30 kΩ (typical)
RxD reflects the signal on the bus
TxD driven by the microcontroller
1) The TxD input is disabled in Sleep mode and the internal pull-up current source is switched off (see Figure 1).
2) A pull-up resistor to the external microcontroller supply is required.
3) In case the TxD input is open the state is internally set to logical “high” through the internal pull-up current source.
Standby Mode
Power-up
EN: Low
TxD: High
RxD: Wake-up source 1)
1
BU
2
EN
-u
ake
SW
p
5
EN
Normal Operation Mode
Sleep Mode
3
EN: High
EN
4
EN: Low
TxD: Disabled 2)
RxD: High 3)
1)
Wake-up Source:
RxD:
logical „high“ after Power-up
RxD:
logical „low“ after BUS Wake-up detection
An external pull-up resistor to the external microcontroller supply is required for the Wake-up or Power-up indication
2)
TxD:
3)
RxD: The RxD output is „high“ because of the external pull-up resistor
Figure 4
Data Sheet
The TxD input is disabled and the pull-up current source is switched off
TLE7258D_MODE_DIAGRAM
Operation mode state diagram
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TLE7258D
Functional Description
Table 2
Operation mode transitions
Number
Reason for transition
Comment
1
Power-on detection
The VS supply voltage rise above the VS,UV,PON power-on reset level
2
Mode change with EN input Triggered by logical “high” level
3
Mode change with EN input Triggered by logical “low” level
4
Mode change with EN input Triggered by logical “high” level
5
Bus wake-up detection
4.2
RxD set “low” for signalling the bus wake-up event to the microcontroller
Normal Operation Mode
While operating in Normal Operation mode the LIN bus receiver and transmitter are active and support data
transmission rates up to 20 kbps. Data from the microcontroller is transmitted to the LIN bus via the TxD input.
Simultaneously the receiver detects the data stream on the LIN bus and forwards it to the RxD output.
Normal Operation mode can be entered from either Sleep mode (see Figure 9) or from Standby mode (see
Figure 5), by setting the EN input to logical “high”. From Normal Operation mode the TLE7258D can only enter
Sleep mode, it is not possible to enter Standby mode directly (see Figure 4).
The transition time for mode change to Normal Operation mode tMODE specifies the delay between the threshold,
where the EN pin detects a “high” input signal, and the actual mode change of TLE7258D to Normal Operation
mode.
VEN,ON
EN
VEN,OFF
tMODE
t
tMODE
RxD: „high“ or „low“
RxD
Hysteresis
Data transmission
tto,rec
TxD
TxD: „high“ because
of internal pull-up
t
Data transmission
TxD: „high impedance“
t
Standby mode
Standby mode:
Sleep mode:
Normal Operation mode
Sleep mode
The internal pull-up current source sets the TxD input to logical „high“ in case the TxD input is open.
The internal pull-up current source is switched off and the TxD input is disabled. The TxD input is floating
in case the TxD input is open.
TLE7258D_NORMAL_MODE
Figure 5
Data Sheet
Entering Normal Operation mode from Standby mode
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TLE7258D
Functional Description
While the TLE7258D is in Normal Operation mode the following functions are available:
•
•
•
•
•
•
•
The transmitter is turned on; data on the TxD input are driven on the LIN bus.
The receiver is turned on; data on the LIN bus are monitored and signaled on the RxD output.
The BUS pin is terminated to VS via the internal termination resistor RBUS (see Figure 1).
The TxD input is pulled up via a current source to the internal power supply of the TLE7258D.
The bus wake-up comparator is turned off.
The two-level undervoltage detection is active. In case VS drops below the undervoltage detection level the
TLE7258D blocks the transmitter and receiver. In case VS drops below the power-on reset level VS,UV,PON the
TLE7258D changes the operation mode to Standby mode after recovery (see “Undervoltage Detection” on
Page 15).
The EN input is active. A “low” signal on the EN input triggers a transition to Sleep.
After a mode change to Normal Operation the TLE7258D requires a logical “high” signal for the time tto,rec on the
TxD input before releasing the data communication (see Figure 5). The transmitter remains deactivated as long
as the signal on the TxD input remains logical “low”, preventing possible bus communication disturbance.
4.3
Standby Mode
The Standby mode is entered automatically after:
•
•
•
A power-up event on the supply VS.
A bus wake-up event.
A power-on reset caused by the supply VS.
In Standby mode no communication to the LIN bus is possible. The transmitter and the receiver are disabled.
While the TLE7258D is in Standby mode the following functions are available:
•
•
•
•
•
•
•
The transmitter is turned off, the TxD input is inactive and the bus output is permanent “recessive”.
The receiver is turned off.
The RxD output indicates either a wake-up event or a power-up event (see Figure 4 and Table 1).
The BUS pin is terminated to VS via the internal termination resistor RBUS (see Figure 1).
The TxD input is pulled up with a current source to the internal power supply of the TLE7258D.
In Standby mode only the power-on reset level of the undervoltage detection is active (see “Undervoltage
Detection” on Page 15).
The EN input is active. A “high” signal on the EN input triggers a transition to Normal Operation mode (see
Figure 5).
After a power-up event the TLE7258D enters Standby mode by default. The EN pin has an internal pull-down
resistor and the TLE7258D remains in Standby until the external microcontroller applies a logical “high” signal at
the EN input (see Figure 6).
Data Sheet
9
Rev. 1.2, 2014-12-08
TLE7258D
Functional Description
VS
VS,UV,PON
t
LIN
t
External microcontroller
supply: „Off“
External microcontroller supply: „On“
RxD
RxD signals Power-up
t
EN
The device remains in Standby Mode while
the signal on the EN input is „low“
t
Un-powered
Standby mode
Normal Operation mode
TLE7258D_STANDBY_MODE
Figure 6
Data Sheet
Entering Standby mode after power-up
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TLE7258D
Functional Description
4.4
Sleep Mode
Sleep mode is a low power mode with quiescent current consumption reduced to a minimum while the device is
still able to wake-up by a message on the LIN bus.
To switch the TLE7258D from Normal Operation mode to Sleep mode, the EN input has to be set to “low”.
Conversely a logical “high” signal on the EN input sets the device directly back to Normal Operation mode (see
Figure 4). The TLE7258D can only enter Sleep mode from Normal Operation mode.
EN
t
RxD
RxD: “high“ because of external pull-up
resistor to the microcontroller supply voltage
RxD: „high“ or „low“ depending on
the signals on the LIN bus
t
TxD
Data transmission
TxD: „high impedance“
tMode
t
Normal Operation mode
Sleep mode
TLE7258D_SLEEP_MODE
Figure 7
Entering Sleep mode from Normal Operation mode
While the TLE7258D is in Sleep mode the following functions are available:
•
•
•
•
•
•
•
•
The transmitter is turned off.
The receiver is turned off.
The BUS output is terminated to VS via the internal termination resistor RBUS (see Figure 1).
The RxD output is “high” if a pull-up resistor is connected to the external microcontroller supply.
The TxD input is disabled and the internal pull-up current source is switched off.
The bus wake-up comparator is active and will cause transition to Standby mode in case of a wake-up event.
In Sleep mode only the power-on reset level of the undervoltage detection is active (see “Undervoltage
Detection” on Page 15).
The EN input remains active. A “high” signal on the EN input triggers a transition to Normal Operation mode.
Data Sheet
11
Rev. 1.2, 2014-12-08
TLE7258D
Functional Description
4.5
Bus Wake-up Event
LIN bus signal
VBUS
VBUS,wk
VBUS,wk
tWK,bus
t
Sleep mode
Standby mode
EN
t
TxD1): „high“ because of
internal pull-up current source
TxD1): „high impedance“
TxD
t
RxD
RxD: „high“ because of the external pull-up to the microcontroller supply voltage
1)
Figure 8
RxD: „low“ indicates bus
wake-up event
t
In case the TxD input is open
TLE7258D_BUS_WAKE
Bus wake-up behavior
A bus wake-up event, also called remote wake-up, changes the operation mode from Sleep mode to Standby
mode. A falling edge on the LIN bus, followed by a “dominant” bus signal for the time tWK,bus results in a bus wakeup event. The mode change to Standby mode becomes active with the following rising edge on the LIN bus. The
TLE7258D remains in Sleep mode until it detects a state change on the LIN bus from “dominant” to “recessive”
(see Figure 8).
In Standby mode a logical “low” signal on the RxD output indicates a bus wake-up event.
In case the TLE7258D detects a bus wake-up event while already being in Standby mode after power-up, the
wake-up event will be signaled with a logical “low” level on RxD and override the power-on wake source (See
Figure 6).
Data Sheet
12
Rev. 1.2, 2014-12-08
TLE7258D
Functional Description
4.6
Mode Transition via EN input
VEN,ON
EN
VEN,OFF
tMODE
Hysteresis
t
tMODE
Data transmission
RxD
tto,rec
t
TxD 1)
Data transmission
t
Sleep mode
1)
Normal Operation mode
The TxD signal is driven from the external microcontroller
Figure 9
Sleep mode
TLE7258D_ENABLE
Entering Normal Operation mode from Sleep mode
The EN input is used for operation mode control of the TLE7258D. By setting the EN input logical “high” for the
time tMODE while being Sleep or Standby mode, a transition to Normal Operation mode will be triggered (see
Figure 9). The EN input has an integrated pull-down resistor to ensure the device remains in Sleep or Standby
mode even if the EN pin is left open. The EN input has an integrated hysteresis.
A signal transition from logical “high” to “low” on the EN input changes the operation mode from Normal Operation
mode to Sleep mode (see Figure 5).
The TLE7258D changes the operation modes regardless of the signal on the BUS pin. In the case of a short circuit
between the LIN bus and GND, resulting in a permanent “dominant” signal, the TLE7258D can be set to Sleep
mode by setting the EN input to logical “low”.
After a mode change to Normal Operation mode, a logical “high” signal for the time tto,rec on the TxD input is
required to release the data communication.
Data Sheet
13
Rev. 1.2, 2014-12-08
TLE7258D
Functional Description
4.7
Over-Temperature Protection
The TLE7258D has an integrated over-temperature sensor to protect the device against thermal overstress on the
transmitter. In case of an over-temperature event, the transmitter will be disabled (see Figure 10). An overtemperature event will not cause any mode change and will not be directly indicated on the RxD output or the TxD
input.
When the junction temperature falls below the thermal shut down level TJ < TJSD, the transmitter will be
reactivated. After an over-temperature recovery the TxD input requires a logical “high” signal before restarting data
transmission.
A 10°C hysteresis avoids toggling during the temperature shut down.
TJSD (shutdown temp.)
ΔT (shutdown hysteresis)
TJ
Switch-on
Cool down
Overtemperature event
t
BUS
t
TxD
t
RxD
t
TLE7258_OVER_TEMPERATURE
Figure 10
Data Sheet
Over-temperature shut down
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TLE7258D
Functional Description
4.8
Undervoltage Detection
Supply voltage VS
VS
Undervoltage
detection level VS,UV,OFF
Undervoltage release level VS,UV,ON
Undervoltage hysteresis VS,UV,HYS
Power-on reset level VS,UV,PON
Blanking time tblank,UV
Communication blocked
Normal Operation mode
t
Normal Operation mode
TLE7258_UNDERVOLTAGE_EARLY
Figure 11
Early undervoltage detection
The TLE7258D has undervoltage detection on the VS supply pin with two different thresholds:
•
•
In Normal Operation mode the TLE7258D blocks the communication between the LIN bus and the
microcontroller when detecting undervoltage events. However, no mode change will occur. After VS rises
above the undervoltage release level VS,UV,REL, the bus communication interface will be released when the
signal on the TxD input goes “high”. See Figure 11.
In case the power supply VS drops down below the power-on reset level VS,UV,PON the TLE7258D not only
blocks the communication between the LIN bus and the microcontroller, it also changes the operation mode
to Standby mode after VS supply recovery. In Standby mode the TLE7258D indicates a power-up event on the
RxD output. The power-on reset level is active in all operation modes.See Figure 12.
Supply voltage VS
VS
Undervoltage
detection level VS,UV,OFF
Undervoltage release level VS,UV,ON
Undervoltage hysteresis VS,UV,HYS
Power-on reset level VS,UV,PON
Blanking time tblank,UV
t
Normal Operation mode
Device unpowered
Communication blocked
Figure 12
Undervoltage detection and power-on reset
4.9
3.3 V and 5 V Logic Capability
Standby mode (EN = „low“)
Normal Operation mode (EN = “high“)
TLE7258_UNDERVOLTAGE_RESET
The TLE7258D can be used for 3.3 V and 5 V microcontrollers. The logic inputs and the outputs are capable to
operate with both voltage levels. The RxD output needs an external pull-up resistor to the microcontroller supply
to define the voltage level (see Chapter 7.6 “RxD Pull-up Resistor” on Page 26 and Figure 15).
Data Sheet
15
Rev. 1.2, 2014-12-08
TLE7258D
Functional Description
4.10
Short Circuit
The BUS pin of TLE7258D can withstand short circuits to either GND or to the VS power supply. The integrated
over-temperature protection may disable the transmitter in case of a permanent short circuit on the bus pin is
causing the overheating.
Data Sheet
16
Rev. 1.2, 2014-12-08
TLE7258D
General Product Characteristics
5
General Product Characteristics
5.1
Absolute Maximum Ratings
Table 3
Absolute Maximum Ratings Voltages, Currents and Temperatures1)
All voltages with respect to ground; positive current flowing into pin; unless otherwise specified
Parameter
Symbol
Values
Min.
Max.
Unit
Note / Test Condition
Number
Voltages
Battery supply voltage
VS
-0.3
40
V
LIN Spec 2.2A (Par. 11)
1.1.1
BUS input voltage
VBUS,G
-27
40
V
–
1.1.2
-0.3
6.0
V
–
1.1.3
IRxD
0
15
mA
–
1.2.1
Junction temperature
Tj
-40
150
°C
–
1.3.1
Storage temperature
Ts
-55
150
°C
–
1.3.2
Electrostatic discharge voltage
at VS
VESD
-4
4
kV
Human Body Model
(100 pF via 1.5 kΩ)2)
1.4.1
Electrostatic discharge voltage
at BUS
VESD
-6
6
kV
Human Body Model
(100 pF via 1.5 kΩ)3)
1.4.6
Electrostatic discharge voltage
all other pins
VESD
-4
4
kV
Human Body Model
(100 pF via 1.5 kΩ)2)
1.4.2
Electrostatic discharge voltage
all pins
VESD
-1
1
kV
Charged Device Model4)
1.4.3
Logic voltages at EN, TxD, RxD Vlogic
Currents
Output current at RxD
Temperatures
ESD Susceptibility
1)
2)
3)
4)
Not subject to production test, specified by design
ESD susceptibility HBM according to ANSI / ESDA / JEDEC JS-001
ESD susceptibility HBM according to ANSI / ESDA / JEDEC JS-001
ESD susceptibility, Charged Device Model “CDM” EIA / JESD 22-C101 or ESDA STM5.3.1
Note: Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are
not designed for continuous repetitive operation.
Data Sheet
17
Rev. 1.2, 2014-12-08
TLE7258D
General Product Characteristics
5.2
Functional Range
Table 4
Operating Range
Parameter
Symbol
Values
Unit
Note / Test Condition
Number
Min.
Max.
VS(ext)
18
40
V
Parameter deviations
possible
2.1.1
Supply voltage range for normal VS(nor)
operation
5.5
18
V
LIN Spec 2.2A (Par. 10)
2.1.2
-40
150
°C
1)
2.2.1
Supply Voltages
Extended supply voltage range
for operation
Thermal Parameters
Junction temperature
Tj
1) Not subject to production test, specified by design
Note: Within the functional range the IC operates as described in the circuit description. The electrical
characteristics are specified within the conditions given in the related electrical characteristics table.
5.3
Thermal Characteristics
Note: This thermal data was generated in accordance with JEDEC JESD51 standards. For more information, go
to www.jedec.org.
Table 5
Thermal Resistance1)
Parameter
Symbol
Values
Min.
Typ.
Max.
–
60
–
Unit
Note / Test Condition
Num
ber
K/W
2)
3.2.1
K/W
2)
Thermal Resistance
Junction ambient
RthJA
–
–
190
–
3.2.2
2
2)
70
–
K/W
300 mm heatsink on PCB
150
175
200
°C
–
3.3.1
–
10
–
K
–
3.3.2
3.2.3
Thermal Shutdown Junction Temperature
Thermal shutdown temperature TJSD
Thermal shutdown hysteresis
∆T
1) Not subject to production test, specified by design
2) Specified RthJA value is according to Jedec JESD51-3 at natural convection on FR4 1s0p board; The product (TLE7258D)
was simulated on a 76.2 x 114.3 x 1.5 mm board with 1 inner copper layer (1 x 70 mm Cu).
Data Sheet
18
Rev. 1.2, 2014-12-08
TLE7258D
Electrical Characteristics
6
Electrical Characteristics
6.1
Functional Device Characteristics
Table 6
Electrical Characteristics
5.5 V < VS < 18 V; RL = 500 Ω; -40°C < Tj < 150°C;
all voltages with respect to ground; positive current flowing into pin; unless otherwise specified.
Parameter
Symbol
Values
Unit Note / Test Condition
Min.
Typ.
Max.
Num
ber
Current Consumption
Current consumption at VS,
Recessive state
IS,rec
0.1
0.6
2.0
mA
Without RL;
VTxD = “high”
4.1.1
Current consumption at VS,
Dominate state
IS,dom
0.1
1.1
3.0
mA
Without RL;
VTxD = 0 V
4.1.2
Current consumption at VS,
Standby mode
IS,standby
100
350
900
μA
Standby mode,
VBUS = VS
4.1.3
Current consumption at VS,
Sleep mode
IS,sleep,typ
1
10
15
μA
Sleep mode, Tj < 40 °C;
VS = 13.5 V; VBUS = VS
4.1.4
Current consumption at VS,
Sleep mode
IS,sleep
1
10
25
μA
Sleep mode,
VBUS = VS
4.1.5
Current consumption at VS,
Sleep mode.
Bus shorted to GND
IS,SC_GND
100
–
700
μA
Sleep mode,
VS = 13.5 V; VBUS = 0 V
4.1.6
Power-on reset level on VS
VS,UV,PON
–
–
4.3
V
Reset level for mode change 4.2.1
Undervoltage threshold, VS on
VS,UV,ON
4.7
5.15
5.5
V
Rising edge
4.2.2
Undervoltage threshold, VS off
VS,UV,OFF
4.4
4.85
5.2
V
Falling edge
4.2.3
4.2.4
Undervoltage Detection
Undervoltage detection
hysteresis
VS,UV,HYS
–
300
–
mV
1)
Undervoltage blanking time
tBLANK,UV
–
10
–
μs
1)
4.2.5
“High” level leakage current
IRD,H,leak
–
–
5
μA
VRxD = 5 V; VBUS = VS
4.3.1
“Low” level output current
IRD,L
1.3
–
–
mA
VRxD = 0.4 V; VBUS = 0 V
4.3.2
“High” level input voltage range VTD,H
2
–
6.0
V
Recessive state
4.4.1
“Low” level input voltage range VTD,L
-0.3
–
0.8
V
Dominant state
4.4.2
4.4.3
Receiver Output: RxD
Transmission Input: TxD
Input hysteresis
VTD,hys
–
200
–
mV
1)
Pull-up current
ITD
-60
–
-20
μA
VTxD = 0 V; Normal Operation 4.4.4
mode or Standby mode
Enable Input: EN
“High” level input voltage range VEN,ON
Data Sheet
2
–
6.0
19
V
Normal Operation mode
4.5.1
Rev. 1.2, 2014-12-08
TLE7258D
Electrical Characteristics
Table 6
Electrical Characteristics (cont’d)
5.5 V < VS < 18 V; RL = 500 Ω; -40°C < Tj < 150°C;
all voltages with respect to ground; positive current flowing into pin; unless otherwise specified.
Parameter
Symbol
“Low” level input voltage range VEN,OFF
Values
Unit Note / Test Condition
Num
ber
Min.
Typ.
Max.
-0.3
–
0.8
V
Sleep mode or Standby
mode
4.5.2
Input hysteresis
VEN,hys
–
200
–
mV
1)
4.5.3
Pull-down resistance
REN
15
30
60
kΩ
–
4.5.4
Receiver threshold voltage,
recessive to dominant edge
Vth_dom
0.4
× VS
0.44
× VS
–
V
–
4.7.1
Receiver dominant state
VBUSdom
–
–
0.4
× VS
V
LIN Spec 2.2A (Par. 17)
4.7.2
Receiver threshold voltage,
dominant to recessive edge
Vth_rec
–
0.56
× VS
0.6
× VS
V
–
4.7.3
Receiver recessive state
VBUSrec
0.6
× VS
–
–
V
LIN Spec 2.2A (Par. 18)
4.7.4
Receiver center voltage
VBUS_CNT
0.475 0.5
× VS × VS
0.525 V
× VS
LIN Spec 2.2A (Par. 19)2)
4.7.5
Receiver hysteresis
VHYS
0.07
× VS
0.12
× VS
0.175 V
× VS
LIN Spec 2.2A (Par. 20)3)
4.7.6
Wake-up threshold voltage
VBUS,wk
0.40
× VS
0.5
× VS
0.6
× VS
V
–
4.7.7
VBUS,ro
0.8
× VS
–
VS
V
VTxD = “high”;
4.8.1
40
85
125
mA
VBUS = 13.5 V;
LIN Spec 2.2A (Par. 12);
4.8.2
-0.5
–
mA
VS = 0 V; VBUS = -12 V;
4.8.3
Bus Receiver: BUS
Bus Transmitter: BUS
Bus recessive output voltage
Bus short circuit current
IBUS_LIM
Leakage current
IBUS_NO_GND -1
Open load
LIN Spec 2.2A (Par. 15)
Leakage current
IBUS_NO_BAT –
1
5
μA
VS = 0 V; VBUS = 18 V;
4.8.4
LIN Spec 2.2A (Par. 16)
Leakage current
IBUS_PAS_do -1
-0.5
–
mA
VS = 18 V; VBUS = 0 V;
LIN Spec 2.2A (Par. 13)
4.8.5
Leakage current
IBUS_PAS_rec –
1
5
μA
VS = 8 V; VBUS = 18 V;
4.8.6
Forward voltage serial diode
VSerDiode
–
1.0
V
ISerDiode = 75 μA;
4.8.7
m
0.4
LIN Spec 2.2A (Par. 21)
Bus pull-up resistance
Rslave
Bus dominant output voltage
maximum load
VBUS,do
20
40
60
kΩ
LIN Spec 2.2A (Par. 26)
4.8.8
–
–
1.4
2.0
V
V
VTxD = 0 V; RL = 500 Ω;
VS = 7 V;
VS = 18 V;
4.8.9
–
–
Dynamic Transceiver Characteristics
Data Sheet
20
Rev. 1.2, 2014-12-08
TLE7258D
Electrical Characteristics
Table 6
Electrical Characteristics (cont’d)
5.5 V < VS < 18 V; RL = 500 Ω; -40°C < Tj < 150°C;
all voltages with respect to ground; positive current flowing into pin; unless otherwise specified.
Parameter
Symbol
Values
Unit Note / Test Condition
Num
ber
Min.
Typ.
Max.
1
1
3.5
3.5
6
6
μs
μs
RRxD = 2.4 kΩ; CRxD = 20 pF
trx_sym
-2
–
2
μs
LIN Spec 2.2A (Par. 32)
trx_sym = trx_pdf - trx_pdr;
RRxD = 2.4 kΩ; CRxD = 20 pF
4.9.2
Dominant time for bus wake-up tWK,bus
30
–
150
μs
–
4.9.3
Propagation delay:
LIN bus dominant to RxD “low” trx_pdft
LIN bus recessive to RxD “high” trx_pdr
Receiver delay symmetry
LIN Spec 2.2A (Par. 31)
4.9.1
Delay time for mode change
tMODE
–
–
50
μs
–
4.9.4
[906]
TxD recessive time to release
transmitter
tto,rec
–
–
10
μs
1)
4.9.6
Duty cycle D1
(for worst case at 20 kBit/s)
D1
0.396 –
–
4.9.7
Duty cycle 1 4)
THRec(max) = 0.744 × VS;
THDom(max) =0.581 × VS;
VS = 7.0 … 18 V; tbit = 50 μs;
D1 = tbus_rec(min) / 2 × tbit;
LIN Spec 2.2A (Par. 27)
Duty cycle D1
for VS supply 5.5 V to 7.0 V
(for worst case at 20 kBit/s)
D1
0.396 –
–
Duty cycle 1 4)
THRec(max) = 0.760 × VS;
THDom(max) = 0.593 × VS;
5.5 V < VS < 7.0 V;
tbit = 50 μs;
D1 = tbus_rec(min) / 2 × tbit
Duty cycle D2
(for worst case at 20 kBit/s)
D2
–
–
0.581
4.9.9
Duty cycle 2 4)
THRec(min)= 0.422 × VS;
THDom(min)= 0.284 × VS;
VS = 7.6 … 18 V; tbit = 50 μs;
D2 = tbus_rec(max) / 2 × tbit;
LIN Spec 2.2A (Par. 28)
Duty cycle D2
for VS supply 6.1 V to 7.6 V
(for worst case at 20 kBit/s)
D2
–
–
0.581
Duty cycle 2 4)
THRec(min)= 0.410 × VS;
THDom(min)= 0.275 × VS;
6.1 V < VS < 7.6 V;
tbit = 50 μs;
D2 = tbus_rec(max) / 2 × tbit
Duty cycle D3
(for worst case at 10.4 kBit/s)
D3
0.417 –
–
4.9.11
Duty cycle 3 4)
THRec(max) = 0.778 × VS;
THDom(max) =0.616 × VS;
VS = 7.0 … 18 V; tbit = 96 μs;
D3 = tbus_rec(min) / 2 × tbit;
LIN Spec 2.2A (Par. 29)
Data Sheet
21
4.9.8
4.9.10
Rev. 1.2, 2014-12-08
TLE7258D
Electrical Characteristics
Table 6
Electrical Characteristics (cont’d)
5.5 V < VS < 18 V; RL = 500 Ω; -40°C < Tj < 150°C;
all voltages with respect to ground; positive current flowing into pin; unless otherwise specified.
Parameter
Symbol
Values
Min.
Typ.
Unit Note / Test Condition
Max.
Num
ber
Duty cycle D3
for VS supply 5.5 V to 7.0 V
(for worst case at 10.4 kBit/s)
D3
0.417 –
–
Duty cycle 3 4)
THRec(max) = 0.797 × VS;
THDom(max) = 0.630 × VS;
5.5 V < VS < 7.0 V;
tbit = 96 μs;
D3 = tbus_rec(min) / 2 × tbit;
Duty cycle D4
(for worst case at 10.4 kBit/s)
D4
–
–
0.590
4.9.13
Duty cycle 4 4)
THRec(min) = 0.389 × VS;
THDom(min) = 0.251 × VS;
VS = 7.6 … 18 V; tbit = 96 μs;
D4 = tbus_rec(max) / 2 × tbit;
LIN Spec 2.2A (Par. 30)
Duty cycle D4
for VS supply 6.1 V to 7.6 V
(for worst case at 10.4 kBit/s)
D4
–
–
0.590
Duty cycle 4 4)
THRec(min) = 0.378 × VS;
THDom(min)= 0.242 × VS;
6.1 V < VS < 7.6 V;
tbit = 96 μs;
D4 = tbus_rec(max) / 2 × tbit;
1)
2)
3)
4)
4.9.12
4.9.14
Not subject to production test, specified by design
VBUS_CNT = (Vth_dom + Vth rec) / 2
VHYS = Vth_rec - Vth_dom
Bus load concerning LIN Spec 2.2A:
Load 1 = 1 nF / 1 kΩ = CBUS / RL
Load 2 = 6.8 nF / 660 Ω = CBUS / RL
Load 3 = 10 nF / 500 Ω = CBUS / RL
Data Sheet
22
Rev. 1.2, 2014-12-08
TLE7258D
Electrical Characteristics
6.2
Diagrams
VS
EN
100 nF
VIO = 5 V
RL
TxD
RRxD
RxD
BUS
CRxD
GND
CBus
TLE7258D_TEST_CIRCUIT
Figure 13
Simplified test circuit
tBit
tBit
tBit
TxD
(input to transmitting node)
tBus_dom(max)
tBus_rec(min)
THRec(max)
Thresholds of receiving node 1
THDom(max)
VSUP
(Transceiver supply of
transmitting node)
THRec(min)
Thresholds of receiving node 2
THDom(min)
tBus_dom(min)
tBus_rec(max)
RxD
(output of receiving node 1)
trx_pdf(1)
trx_pdr(1)
RxD
(output of receiving node 2)
trx_pdr(2)
trx_pdf(2)
Duty Cycle D1, D3 = tBUS_rec(min) / (2 x tBIT)
Duty Cycle D2, D4 = tBUS_rec(max) / (2 x tBIT)
Figure 14
Data Sheet
TLE7258_LIN_TIMING_DIAGRAM
Timing diagram for dynamic characteristics
23
Rev. 1.2, 2014-12-08
TLE7258D
Application Information
7
Application Information
Note: The following information is given as a hint for the implementation of the device only and shall not be
regarded as a description or warranty of a certain functionality, condition or quality of the device.
7.1
Application Example
VBat
VI
22μF
5 V or 3.3V
VQ
10μF
100nF
VCC
100nF
TLE42xx
LIN
BUS
GND
Master Node
2.4kΩ
7
Pull-up to
MCU Supply
VS
Micro Controller
e.g XC22xx
100nF
TLE7258D
1
RxD
1kΩ
4
TxD
6
2
EN
BUS
GND
1nF
GND
5
VI
22μF
ECU_1
5 V or 3.3V
VQ
10μF
100nF
VCC
100nF
TLE42xx
GND
2.4kΩ
Slave Node
7
VS
Pull-up to
MCU Supply
Micro Controller
e.g XC22xx
100nF
TLE7258D
1
RxD
4
TxD
6
2
EN
BUS
220pF
GND
GND
5
ECU_X
TLE7258D_APPLICATION
Figure 15
Data Sheet
Simplified application circuit
24
Rev. 1.2, 2014-12-08
TLE7258D
Application Information
7.2
ESD Susceptibility according to IEC61000-4-2
Test for ESD robustness according to IEC61000-4-2 “Gun test” (150 pF, 330 Ω) have been performed. The results
and test conditions are available in a separate test report.
Table 7
ESD Susceptibility according to IEC61000-4-2
Performed Test
Result
Electrostatic discharge voltage at pin VS, BUS versus GND
Electrostatic discharge voltage at pin VS, BUS versus GND
+10
-10
Unit
Remarks
kV
1)
kV
1)
Positive pulse
Negative pulse
1) ESD susceptibility “ESD GUN” according IEC 61000-4-2, tested by external test house.
7.3
Transient Robustness according to ISO 7637-2
Test for transient robustness according to ISO 7637-2 have been performed. The results and test conditions are
available in a separate test report.
Table 8
Automotive Transient Robustness according to ISO 7637-2
Performed Test
Result
Unit
Remarks
Pulse 1
-100
V
1)
Pulse 2
+75
V
1)
Pulse 3a
-150
V
1)
Pulse 3b
+100
V
1)
1) Automotive Transient Robustness according to ISO 7637-2, tested by external test house.
7.4
LIN Physical Layer Compatibility
The TLE7258D fulfills the Physical Layer Specification of LIN 1.2, 1.3, 2.0, 2.1, 2.2 and 2.2A.
The differences between LIN specification 1.2 and 1.3 is mainly the physical layer specification. The reason was
to improve the compatibility between the nodes.
The LIN specification 2.0 is a super set of the 1.3 version. The 2.0 version offers new features. However, it is
possible to use the LIN 1.3 slave node in a 2.0 node cluster, as long as the new features are not used. Vice versa
it is possible to use a LIN 2.0 node in the 1.3 cluster without using the new features.
In terms of the physical layer the LIN 2.1, LIN 2.2 and LIN 2.2A Specification does not include any changes and
is fully compliant to the LIN Specification 2.0.
LIN 2.2A is the latest version of the LIN specification, released in December 2010. The physical layer specification
of LIN 2.2A will be included in the ISO 17987-4 without modifications.
Additionally, the TLE7258D is compliant to the SAE J2602-2 standard for usage in the US automotive market.
7.5
TxD Fail-Safe Input
The TxD input has an internal pull-up structure to avoid any bus disturbance in case the TxD input is open and
floating. In case of an not connected TxD input, the pin is pulled to an internal voltage supply (see Figure 1) and
the output to the LIN bus on the BUS pin is always “recessive”. Therefore the TLE7258D can not disturb the
communication on the LIN bus.
In order to optimize the quiescent current of the TLE7258D in Sleep mode, the pull-up structure inside the TxD
input is disabled in Sleep mode. The logic inside the TxD input is not reacting at any signal change provide to the
TxD input pin and the transmitter is turned off. In Sleep mode the TLE7258D can not disturb or block the LIN bus
in any case.
Data Sheet
25
Rev. 1.2, 2014-12-08
TLE7258D
Application Information
Table 9
TxD Termination
Operation Mode
Remarks
Normal Operation mode
The internal pull-up structure is active, in case the TxD input is open the
TxD input signal is “high” and the output on the BUS pin is “recessive”
Standby mode
The internal pull-up structure is active, in case the TxD input is open the
TxD input signal is “high”. In Standby mode the transmitter is turned off
and therefore the output on the BUS pin always is “recessive”
Sleep mode
The internal pull-up structure is inactive, in case the TxD input is open the
TxD input signal is “floating”. In Sleep mode the transmitter is turned off
and therefore the output on the BUS pin always is “recessive”
7.6
RxD Pull-up Resistor
The receive data output (RxD) provides an open drain behavior for allowing the output level to be adapted to the
microcontroller supply voltage. Thus 3.3 V microcontroller derivatives without 5 V tolerant ports can be used. In
case the microcontroller port pin does not provide an integrated pull-up, an external pull-up resistor connected to
the microcontroller’s VCC supply voltage is required.
The typical RxD pin current / voltage characteristic over temperature is given in Figure 16. With the applications
microcontroller port pins’ (Rx) minimum “high”-level and maximum “low”-level input voltage the pull-up resistor can
be dimensioned. For most applications a pull-up resistor RRx of 2.4 kΩ is recommended.
1.4
Tj = −40°C
Tj = 27°C
1.2
Tj = 150°C
VRxD [V]
1
0.8
0.6
0.4
0.2
0
Figure 16
Data Sheet
0
1
2
3
4
IRxD [mA]
5
6
7
8
Typical RxD output sink characteristics
26
Rev. 1.2, 2014-12-08
TLE7258D
Application Information
7.7
Compatibility with other Infineon LIN Transceivers
Infineon offers a complete LIN transceiver family consisting of devices in PG-DSO-8 package (TLE7257SJ,
TLE7258SJ and TLE7259-3GE) and PG-TSON-8 package (TLE7257LE, TLE7258D, TLE7258LE and TLE72593LE). All these devices are pin-to-pin compatible, with the only differences at the pins named N.C. ( = Not
Connected). The N.C. pins can be left open on the PCB in applications where these functionalities are not needed.
The N.C. pins are internally not bonded, so the devices will not be affected if these pins are connected to signals
on the application PCB.
RxD
1
8
INH
EN
2
7
VS
WK
3
6
BUS
TxD
4
5
GND
TLE7259-3GE
RxD
1
8
INH
RxD
1
8
INH
EN
2
7
VS
EN
2
7
VS
N.C.
3
6
BUS
N.C.
3
6
BUS
TxD
4
5
GND
TxD
4
5
GND
TLE7257SJ
TLE7258SJ
Figure 17
Pin compatibility between TLE7257SJ, TLE7258SJ and TLE7259-3GE
Table 10
Functionality of LIN transceiver family, PG-DSO-8 package
Device
TLE7257SJ
TLE7258SJ
TLE7259-3GE
Applications
Standard LIN
Master node
Standard LIN
Slave node
High End LIN
All kind of nodes
Fast Programming mode
–
–
✔
Local Wake input
–
–
✔
Inhibit output usage
VREG control
VREG control
VREG control
Master Termination
TxD Time-out
✔
✔
✔
Power-Up mode
Sleep mode
Standby mode
Standby mode
Features
The functional difference between the devices in the Infineon LIN transceiver family is summarized in Table 10
and in Table 11. For mode details on the functional and parametric differences, please refer to the respective
part’s datasheet.
Data Sheet
27
Rev. 1.2, 2014-12-08
TLE7258D
Application Information
RxD
1
8
INH
EN
2
7
VS
WK
3
6
BUS
TxD
4
5
GND
TLE7259-3LE
RxD
1
8
INH
EN
2
7
VS
N.C.
3
6
TxD
4
5
RxD
1
8
INH
EN
2
7
VS
BUS
N.C.
3
6
BUS
GND
TxD
4
5
GND
RxD
1
8
N.C.
EN
2
7
VS
BUS
N.C.
3
6
GND
TxD
4
5
TLE7257LE
TLE7258D
TLE7258LE
(Top side X-Ray view)
Figure 18
Pin compatibility between TLE7257LE, TLE7258LE, TLE7258D and TLE7259-3LE
Table 11
Functionality of LIN transceiver family, PG-TSON-8 package
Device
TLE7257LE
TLE7258LE
TLE7258D
TLE7259-3LE
Applications
Standard LIN
Master node
Standard LIN
Slave node
K-Line
MOST ECL
High End LIN
All kind of nodes
Fast Programming mode
–
–
–
✔
Local Wake input
–
–
–
✔
Inhibit output usage
VREG control
VREG control
–
VREG control
Master Termination
TxD Time-out
✔
✔
–
✔
Power-Up mode
Sleep mode
Standby mode
Standby mode
Standby mode
Features
Data Sheet
28
Rev. 1.2, 2014-12-08
TLE7258D
Package Outlines
1±0.1
0
+0.05
Package Outlines
0.2 ±0.1
2.4 ±0.1
0.81 ±0.1
0.3 ±0.1
Pin 1 Marking
Z
1.58 ±0.1
1.63 ±0.1
0.25 ±0.1
3 ±0.1
0.05
0.38 ±0.1
0.4 ±0.1
0.1 ±0.1
3 ±0.1
0.56 ±0.1
8
0.65 ±0.1
Pin 1 Marking
0.3 ±0.1
PG-TSON-8-1-PO V01
Z (4:1)
0.07 MIN.
Figure 19
PG-TSON-8 (Plastic Thin Small Outline Nonleaded PG-TSON-8-1)
Green Product (RoHS compliant)
To meet the world-wide customer requirements for environmentally friendly products and to be compliant with
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e. Pbfree finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).
For further information on alternative packages, please visit our website:
http://www.infineon.com/packages.
Data Sheet
29
Dimensions in mm
Rev. 1.2, 2014-12-08
TLE7258D
Revision History
9
Revision History
Table 12
Revision History
Revision
Data
Changes
1.2
2014-12-08
Data Sheet updated.
1.0
2013-10-16
Data Sheet created.
Data Sheet
30
Rev. 1.2, 2014-12-08
Edition 2014-12-08
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2014 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
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