FDMC7660S

FDMC7660S N-Channel Power Trench® SyncFET™ December 2009 FDMC7660S N-Channel Power Trench® SyncFET™ 30 V, 20 A, 2.2 mΩ Features Max rDS(on) = 2.2 mΩ at VGS = 10 V, ID = 20 A Max rDS(on) = 2.95 mΩ at VGS = 4.5 V, ID = 18 A High performance technology for extremely low rDS(on) Termination is Lead-free and RoHS Compliant General Description The FDMC7660S has been designed to minimize losses in power conversion applications. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode. Applications Synchronous Rectifier for DC/DC Converters Notebook Vcore/GPU low side switch Networking Point of Load low side switch Telecom secondary side rectification Pin 1 S S S D G D D D D D Bottom D 5 6 7 8 4 3 2 1 G S S S D Top Power 33 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range (Note 1a) (Note 3) TC = 25 °C TC = 25 °C TA = 25 °C (Note 1a) (Note 4) Ratings 30 ±20 40 100 20 200 128 41 2.3 -55 to +150 mJ W °C A Units V V Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 3 53 °C/W Package Marking and Ordering Information Device Marking FDMC7660S Device FDMC7660S Package Power 33 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units ©2009 Fairchild Semiconductor Corporation FDMC7660S Rev.C 1 www.fairchildsemi.com FDMC7660S N-Channel Power Trench® SyncFET™ Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 1 mA, VGS = 0 V ID = 1 mA, referenced to 25 °C VDS = 24 V, VGS = 0 V VGS = 20 V, VDS = 0 V 30 13 500 100 V mV/°C µA nA On Characteristics VGS(th) ∆VGS(th) ∆TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 1 mA ID = 1 mA, referenced to 25 °C VGS = 10 V, ID = 20 A VGS = 4.5 V, ID = 18 A VGS = 10 V, ID = 20 A, TJ = 125 °C VDD = 5 V, ID = 20 A 1.2 1.6 -3 1.7 2.5 2.2 129 2.2 2.95 3.1 S mΩ 2.5 V mV/°C Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 15 V, VGS = 0 V, f = 1 MHz 3250 1260 105 0.8 4325 1680 160 pF pF pF Ω Switching Characteristics td(on) tr td(off) tf Qg(TOT) Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Total Gate Charge Gate to Drain “Miller” Charge VGS = 0 V to 10 V VGS = 0 V to 4.5 V VDD = 15 V ID = 2 0 A VDD = 15 V, ID = 20 A, VGS = 10 V, RGEN = 6 Ω 14 5 34 3.9 47 21 9.5 5 25 10 54 10 66 29 ns ns ns ns nC nC nC nC Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 20 A VGS = 0 V, IS = 1.9 A IF = 20 A, di/dt = 300 A/µs (Note 2) (Note 2) 0.8 0.4 31 39 1.2 0.7 50 62 V ns nC NOTES: 1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 53°C/W when mounted on a 1 in2 pad of 2 oz copper b. 125°C/W when mounted on a minimum pad of 2 oz copper 2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0 %. 3. Starting TJ = 25oC; N-ch: L = 1 mH, IAS = 16 A, VDD = 27 V, VGS = 10 V. 4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied. ©2009 Fairchild Semiconductor Corporation FDMC7660S Rev.C 2 www.fairchildsemi.com FDMC7660S N-Channel Power Trench® SyncFET™ Typical Characteristics TJ = 25 °C unless otherwise noted 200 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 10 V ID, DRAIN CURRENT (A) 4 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 150 VGS = 6 V VGS = 4.5 V 3 VGS = 3 V VGS = 3.5 V 100 VGS = 4 V VGS = 3.5 V 2 50 VGS = 3 V PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 1 VGS = 4 V VGS = 4.5 V VGS = 6 V VGS = 10 V 0 0.0 0.5 1.0 1.5 2.0 2.5 0 0 50 100 ID, DRAIN CURRENT (A) 150 200 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 10 SOURCE ON-RESISTANCE (mΩ) 1.6 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.4 1.2 1.0 0.8 0.6 -75 ID = 20 A VGS = 10 V rDS(on), DRAIN TO PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 8 ID = 20 A 6 4 TJ = 125 oC 2 TJ = 25 oC -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 0 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance vs Junction Temperature 200 IS, REVERSE DRAIN CURRENT (A) Figure 4. On-Resistance vs Gate to Source Voltage 200 100 10 1 0.1 0.01 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX VGS = 0 V ID, DRAIN CURRENT (A) 150 VDS = 5 V TJ = 125 oC TJ = 125 oC TJ = 25 oC 100 TJ = 25 oC TJ = -55 oC 50 TJ = -55 oC 0 1 2 3 4 VGS, GATE TO SOURCE VOLTAGE (V) 0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2009 Fairchild Semiconductor Corporation FDMC7660S Rev.C 3 www.fairchildsemi.com FDMC7660S N-Channel Power Trench® SyncFET™ Typical Characteristics TJ = 25 °C unless otherwise noted 10 VGS, GATE TO SOURCE VOLTAGE (V) ID = 20 A VDD = 15 V CAPACITANCE (pF) 10000 Ciss 8 6 VDD = 10 V VDD = 20 V 1000 Coss 4 2 100 f = 1 MHz VGS = 0 V Crss 0 0 10 20 30 40 50 Qg, GATE CHARGE (nC) 10 0.1 1 10 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 150 RθJC = 3 C/W o 50 IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT (A) 120 VGS = 10 V TJ = 25 oC 10 TJ = 100 oC 90 VGS = 4.5 V 60 30 Limited by Package TJ = 125 oC 1 0.01 0.1 1 10 100 1000 0 25 50 75 100 o 125 150 tAV, TIME IN AVALANCHE (ms) Tc, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability 500 P(PK), PEAK TRANSIENT POWER (W) Figure 10. Maximum Continuous Drain Current vs Ambient Temperature 3000 1000 SINGLE PULSE RθJA = 125 oC/W TA = 25 oC 100 ID, DRAIN CURRENT (A) 100 us 10 THIS AREA IS LIMITED BY rDS(on) 1 ms 10 ms 100 ms 1s 10 s DC 100 1 0.1 SINGLE PULSE TJ = MAX RATED RθJA = 125 oC/W TA = 25 oC 10 0.01 0.01 0.1 1 10 100 1 0.5 -4 10 10 -3 10 -2 10 -1 1 10 100 1000 VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (sec) Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation ©2009 Fairchild Semiconductor Corporation FDMC7660S Rev.C 4 www.fairchildsemi.com FDMC7660S N-Channel Power Trench® SyncFET™ Typical Characteristics TJ = 25 °C unless otherwise noted 2 1 NORMALIZED THERMAL IMPEDANCE, ZθJA DUTY CYCLE-DESCENDING ORDER 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.01 t1 t2 0.001 SINGLE PULSE RθJA = 125 C/W o NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA 0.0001 -4 10 10 -3 10 -2 10 -1 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2009 Fairchild Semiconductor Corporation FDMC7660S Rev.C 5 www.fairchildsemi.com FDMC7660S N-Channel Power Trench® SyncFET™ Typical Characteristics (continued) SyncFET Schottky body diode Characteristics Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 27 shows the reverse recovery characteristic of the FDMC7660S. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. di/dt = 300 A/µs IDSS, REVERSE LEAKAGE CURRENT (A) 20 15 CURRENT (A) 10 10 10 10 10 10 -1 -2 TJ = 125 oC 10 5 0 -5 0 50 100 TIME (ns) -3 TJ = 100 oC -4 -5 TJ = 25 oC -6 150 200 0 5 10 15 20 25 30 VDS, REVERSE VOLTAGE (V) Figure 14. FDMC7660S SyncFET body diode reverse recovery characteristic Figure 15. SyncFET body diode reverse leakage versus drain-source voltage ©2009 Fairchild Semiconductor Corporation FDMC7660S Rev.C 6 www.fairchildsemi.com FDMC7660S N-Channel Power Trench® SyncFET™ Dimensional Outline and Pad Layout ©2009 Fairchild Semiconductor Corporation FDMC7660S Rev.C 7 www.fairchildsemi.com FDMC7660S N-Channel Power Trench® SyncFET™ TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Power-SPM™ AccuPower™ FlashWriter® * ®* PowerTrench® Auto-SPM™ FPS™ PowerXS™ The Power Franchise® Build it Now™ F-PFS™ ® Programmable Active Droop™ CorePLUS™ FRFET® Global Power ResourceSM QFET® CorePOWER™ Green FPS™ QS™ CROSSVOLT™ TinyBoost™ Green FPS™ e-Series™ Quiet Series™ CTL™ TinyBuck™ Gmax™ RapidConfigure™ Current Transfer Logic™ TinyCalc™ GTO™ DEUXPEED® TinyLogic® EcoSPARK® IntelliMAX™ ™ TINYOPTO™ EfficentMax™ Saving our world, 1mW/W/kW at a time™ ISOPLANAR™ TinyPower™ SignalWise™ EZSWITCH™* MegaBuck™ TinyPWM™ ™* SmartMax™ MICROCOUPLER™ TinyWire™ SMART START™ MicroFET™ TriFault Detect™ SPM® MicroPak™ ® TRUECURRENT™* STEALTH™ MillerDrive™ µSerDes™ Fairchild® SuperFET™ MotionMax™ Fairchild Semiconductor® SuperSOT™-3 Motion-SPM™ FACT Quiet Series™ SuperSOT™-6 OPTOLOGIC® UHC® FACT® SuperSOT™-8 OPTOPLANAR® ® ® Ultra FRFET™ FAST SupreMOS™ UniFET™ FastvCore™ SyncFET™ VCX™ FETBench™ Sync-Lock™ PDP SPM™ VisualMax™ XS™ tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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The datasheet is for reference information only. Rev. I44 Preliminary First Production No Identification Needed Obsolete Full Production Not In Production ©2009 Fairchild Semiconductor Corporation FDMC7660S Rev.C 8 www.fairchildsemi.com