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to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
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Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
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FDMC7660S
N-Channel Power Trench® SyncFET™
30 V, 20 A, 2.2 mΩ
Features
General Description
Max rDS(on) = 2.2 mΩ at VGS = 10 V, ID = 20 A
The FDMC7660S has been designed to minimize losses in
power conversion applications. Advancements in both silicon
and package technologies have been combined to offer the
lowest rDS(on) while maintaining excellent switching
performance. This device has the added benefit of an efficient
monolithic Schottky body diode.
Max rDS(on) = 2.95 mΩ at VGS = 4.5 V, ID = 18 A
High performance technology for extremely low rDS(on)
Termination is Lead-free and RoHS Compliant
Applications
Synchronous Rectifier for DC/DC Converters
Notebook Vcore/GPU low side switch
Networking Point of Load low side switch
Telecom secondary side rectification
Pin 1
S
D
D
Top
D
S
S
G
D
D
5
4
G
D
6
3
S
D
7
2
S
D
8
1
S
Bottom
Power 33
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
(Note 4)
Drain Current -Continuous (Package limited)
ID
TC = 25 °C
-Continuous (Silicon limited)
TC = 25 °C
-Continuous
TA = 25 °C
V
20
A
200
(Note 3)
128
41
Power Dissipation
TJ, TSTG
±20
100
(Note 1a)
Power Dissipation
PD
Units
V
40
-Pulsed
Single Pulse Avalanche Energy
EAS
Ratings
30
(Note 1a)
Operating and Storage Junction Temperature Range
2.3
-55 to +150
mJ
W
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
3
(Note 1a)
53
°C/W
Package Marking and Ordering Information
Device Marking
FDMC7660S
Device
FDMC7660S
©2009 Fairchild Semiconductor Corporation
FDMC7660S Rev.C1
Package
Power 33
1
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
www.fairchildsemi.com
FDMC7660S N-Channel Power Trench® SyncFET™
January 2014
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 1 mA, VGS = 0 V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
30
V
ID = 1 mA, referenced to 25 °C
IDSS
Zero Gate Voltage Drain Current
VDS = 24 V, VGS = 0 V
500
µA
IGSS
Gate to Source Leakage Current
VGS = 20 V, VDS = 0 V
100
nA
2.5
V
13
mV/°C
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 1 mA
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 1 mA, referenced to 25 °C
-3
VGS = 10 V, ID = 20 A
1.7
2.2
rDS(on)
Static Drain to Source On Resistance
VGS = 4.5 V, ID = 18 A
2.5
2.95
VGS = 10 V, ID = 20 A, TJ = 125 °C
2.2
3.1
VDD = 5 V, ID = 20 A
129
VDS = 15 V, VGS = 0 V,
f = 1 MHz
3250
4325
pF
1260
1680
pF
105
160
pF
0.8
1.6
Ω
14
25
ns
5
10
ns
34
54
ns
3.9
10
ns
gFS
Forward Transconductance
1.2
1.6
mV/°C
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
0.1
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg(TOT)
VDD = 15 V, ID = 20 A,
VGS = 10 V, RGEN = 6 Ω
Total Gate Charge
VGS = 0 V to 10 V
47
66
nC
Total Gate Charge
VGS = 0 V to 4.5 V VDD = 15 V
ID = 20 A
21
29
nC
9.5
nC
5
nC
Qgs
Total Gate Charge
Qgd
Gate to Drain “Miller” Charge
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 20 A
(Note 2)
0.8
1.2
VGS = 0 V, IS = 1.9 A
(Note 2)
0.4
0.7
IF = 20 A, di/dt = 300 A/µs
V
31
50
ns
39
62
nC
NOTES:
1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 53°C/W when mounted on
a 1 in2 pad of 2 oz copper
b. 125°C/W when mounted on a
minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0 %.
3. Starting TJ = 25oC; N-ch: L = 1 mH, IAS = 16 A, VDD = 27 V, VGS = 10 V.
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied.
©2009 Fairchild Semiconductor Corporation
FDMC7660S Rev.C1
2
www.fairchildsemi.com
FDMC7660S N-Channel Power Trench® SyncFET™
Electrical Characteristics TJ = 25 °C unless otherwise noted
200
150
VGS = 6 V
VGS = 4.5 V
VGS = 4 V
100
VGS = 3.5 V
50
VGS = 3 V
0
0.0
0.5
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
1.0
1.5
2.0
4
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
VGS = 10 V
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
3
VGS = 3 V
VGS = 3.5 V
2
1
VGS = 4 V
0
2.5
0
50
VDS, DRAIN TO SOURCE VOLTAGE (V)
150
200
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
10
ID = 20 A
VGS = 10 V
rDS(on), DRAIN TO
1.4
1.2
1.0
0.8
0.6
-75
-50
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
100
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics
IS, REVERSE DRAIN CURRENT (A)
125 oC
100
TJ = 25 oC
50
TJ = -55 oC
3
4
TJ = 125 oC
2
TJ = 25 oC
200
100
4
6
8
10
VGS = 0 V
10
TJ = 125 oC
TJ = 25 oC
1
0.1
TJ = -55 oC
0.01
0.001
0.0
0
2
6
Figure 4. On-Resistance vs Gate to
Source Voltage
150
1
ID = 20 A
VGS, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
TJ =
8
2
200
VDS = 5 V
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
0
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On- Resistance
vs Junction Temperature
ID, DRAIN CURRENT (A)
VGS = 10 V
VGS = 6 V
VGS = 4.5 V
4
0.2
0.4
0.6
0.8
1.0
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2009 Fairchild Semiconductor Corporation
FDMC7660S Rev.C1
3
1.2
www.fairchildsemi.com
FDMC7660S N-Channel Power Trench® SyncFET™
Typical Characteristics TJ = 25 °C unless otherwise noted
10000
VGS, GATE TO SOURCE VOLTAGE (V)
10
Ciss
ID = 20 A
CAPACITANCE (pF)
8
VDD = 15 V
6
VDD = 10 V
VDD = 20 V
4
Coss
1000
Crss
100
2
f = 1 MHz
VGS = 0 V
0
0
10
20
30
40
10
0.1
50
1
10
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain
to Source Voltage
150
50
o
ID, DRAIN CURRENT (A)
IAS, AVALANCHE CURRENT (A)
RθJC = 3 C/W
TJ = 25 oC
10
TJ = 100 oC
TJ = 125 oC
120
VGS = 10 V
90
VGS = 4.5 V
60
30
Limited by Package
1
0.01
0.1
1
10
100
0
25
1000
50
125
150
Figure 10. Maximum Continuous Drain
Current vs Ambient Temperature
500
P(PK), PEAK TRANSIENT POWER (W)
3000
100
ID, DRAIN CURRENT (A)
100
o
Figure 9. Unclamped Inductive
Switching Capability
100 us
10
1
75
Tc, CASE TEMPERATURE ( C)
tAV, TIME IN AVALANCHE (ms)
1 ms
10 ms
THIS AREA IS
LIMITED BY rDS(on)
0.1
100 ms
SINGLE PULSE
TJ = MAX RATED
1s
RθJA = 125 oC/W
10 s
DC
TA = 25 oC
0.01
0.01
0.1
1
10
100
TA = 25 oC
100
10
1
0.5
-4
10
-3
10
-2
10
-1
10
1
100
10
1000
t, PULSE WIDTH (sec)
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
©2009 Fairchild Semiconductor Corporation
FDMC7660S Rev.C1
SINGLE PULSE
RθJA = 125 oC/W
1000
Figure 12. Single Pulse Maximum
Power Dissipation
4
www.fairchildsemi.com
FDMC7660S N-Channel Power Trench® SyncFET™
Typical Characteristics TJ = 25 °C unless otherwise noted
NORMALIZED THERMAL
IMPEDANCE, ZθJA
2
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
0.01
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
0.001
SINGLE PULSE
o
RθJA = 125 C/W
0.0001
-4
10
-3
10
-2
10
-1
10
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
©2009 Fairchild Semiconductor Corporation
FDMC7660S Rev.C1
5
www.fairchildsemi.com
FDMC7660S N-Channel Power Trench® SyncFET™
Typical Characteristics TJ = 25 °C unless otherwise noted
SyncFET Schottky body diode
Characteristics
Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power
in the device.
Fairchild’s SyncFET process embeds a Schottky diode in parallel
with PowerTrench MOSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 27 shows the reverse recovery
characteristic of the FDMC7660S.
-1
IDSS, REVERSE LEAKAGE CURRENT (A)
20
di/dt = 300 A/µs
CURRENT (A)
15
10
5
0
-5
0
50
100
150
200
TJ = 125 oC
-2
10
-3
10
TJ = 100 oC
-4
10
-5
10
TJ = 25 oC
-6
10
0
5
10
15
20
25
30
VDS, REVERSE VOLTAGE (V)
TIME (ns)
Figure 15. SyncFET body diode reverse
Figure 14. FDMC7660S SyncFET body
diode reverse recovery characteristic
©2009 Fairchild Semiconductor Corporation
FDMC7660S Rev.C1
10
leakage versus drain-source voltage
6
www.fairchildsemi.com
FDMC7660S N-Channel Power Trench® SyncFET™
Typical Characteristics (continued)
FDMC7660S N-Channel Power Trench® SyncFET™
Dimensional Outline and Pad Layout
©2009 Fairchild Semiconductor Corporation
FDMC7660S Rev.C1
7
www.fairchildsemi.com
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
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Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
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Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I66
©2009 Fairchild Semiconductor Corporation
FDMC7660S Rev.C1
8
www.fairchildsemi.com
FDMC7660S N-Channel Power Trench® SyncFET™
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
Sync-Lock™
AccuPower™
F-PFS™
®
AX-CAP®*
FRFET®
®*
®
SM
Global Power Resource
PowerTrench
BitSiC™
GreenBridge™
PowerXS™
Build it Now™
TinyBoost®
CorePLUS™
Green FPS™
Programmable Active Droop™
TinyBuck®
®
CorePOWER™
Green FPS™ e-Series™
QFET
TinyCalc™
QS™
CROSSVOLT™
Gmax™
TinyLogic®
Quiet Series™
CTL™
GTO™
TINYOPTO™
Current Transfer Logic™
IntelliMAX™
RapidConfigure™
TinyPower™
DEUXPEED®
ISOPLANAR™
™
TinyPWM™
Dual Cool™
Marking Small Speakers Sound Louder
TinyWire™
Saving our world, 1mW/W/kW at a time™
EcoSPARK®
and Better™
TranSiC™
EfficentMax™
SignalWise™
MegaBuck™
TriFault Detect™
ESBC™
SmartMax™
MICROCOUPLER™
TRUECURRENT®*
SMART START™
MicroFET™
®
μSerDes™
Solutions for Your Success™
MicroPak™
SPM®
MicroPak2™
Fairchild®
®
STEALTH™
MillerDrive™
Fairchild Semiconductor
UHC®
SuperFET®
MotionMax™
FACT Quiet Series™
®
Ultra
FRFET™
®
SuperSOT™-3
mWSaver
FACT
UniFET™
OptoHiT™
SuperSOT™-6
FAST®
VCX™
OPTOLOGIC®
SuperSOT™-8
FastvCore™
VisualMax™
OPTOPLANAR®
SupreMOS®
FETBench™
VoltagePlus™
SyncFET™
FPS™
XS™
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
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