FDP4020P

F DP4020P February 1999 PRELIMINARY FDP4020P/FDB4020P P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description This P-Channel low threshold MOSFET has been designed for use as a linear pass element for low voltage outputs. In addition, the part may be used as a low voltage load switch when switching outputs on or off for power management.The part may also be used in conjunction with DC-DC converters requiring P-Channel. Features • -16 A, -20 V. RDS(on) = 0.08 Ω @ VGS = -4.5 V RDS(on) = 0.11 Ω @ VGS = -2.5 V. • Critical DC electrical parameters specified at elevated temperature. • High density cell design for extremely low RDS(on). • TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications. • 175°C maximum junction temperature rating. S G D Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG RθJC RθJA Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA = 25°C unless otherwise noted Parameter FDP4020P -20 ±8 -16 -48 37.5 FDB4020P Units V V A W W/°C °C °C/W °C/W Total Power Dissipation @ TC = 25°C Derate above 25 °C Operating and Storage Junction Temperature Range 0.25 -65 to +175 Thermal Characteristics Thermal Resistance, Junction-to- Case Thermal Resistance, Junction-to- Ambient (Note 1) 4 62.5 40 Package Outlines and Ordering Information Device Marking FDP4020P Device FDP4020P Reel Size 13’’ Tape Width 12mm Quantity 2500 units ©1999 Fairchild Semiconductor Corporation FDP4020P Rev. A F DP4020P Electrical Characteristics Symbol BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR TA = 25°C unless otherwise noted Parameter Test Conditions Min -20 Typ Max Units V Off Characteristics Drain-Source Breakdown VGS = 0 V, ID = -250 µA Voltage Breakdown Voltage ID = -250 µA, Referenced to 25°C Temperature Coefficient Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse (Note 2) -28 -1 100 -100 mV/°C µA nA nA VGS = 8 V, VDS = 0 V VGS = -8 V, VDS = 0 V On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance VDS = VGS, ID = -250 µA ID = -250 µA, Referenced to 25°C VGS = -4.5 V,ID = -8 A, VGS = -4.5 V,ID = -8 A,TJ=125°C VGS = -2.5 V,ID = -7 A VGS = -4.5 V, VDS = -5 V VDS = -5 V, ID = -8 A -0.4 -0.58 2 0.068 0.098 0.096 -1 V mV/°C 0.08 0.13 0.110 Ω ID(on) gFS -20 14 A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = -10 V, VGS = 0 V, f = 1.0 MHz 665 270 70 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = -5 V, ID = -1 A, VGS = -4.5 V, RGEN = 6 Ω 8 24 50 29 16 38 80 45 13 ns ns ns ns nC nC nC VDS = -5 V, ID = -16 A, VGS = -4.5 V 9.5 1.3 2.2 Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = -16 A (Note 2) (Note 2) (Note 2) -16 -48 -1.2 A V Notes: 1. RθJA is the sum of the juntion-to-case and case-to-ambient thermal resistance.For T0-263 the device is mounted on circuit board with a 1in2 pad of 2 oz. copper. 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% FDP4020P Rev. A F DP4020P Typical Characteristics 40 -4.0V -3.5V 24 -3.0V 2 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = -4.5V -ID, DRAIN CURRENT (A) 32 1.8 VGS = -2.0V 1.6 1.4 1.2 1 0.8 -2.5V -3.0V -3.5V -4.0V -4.5V 16 -2.5V 8 -2.0V 0 0 2 4 6 8 10 0 5 10 15 20 25 30 -VDS, DRAIN-SOURCE VOLTAGE (V) -ID, DIRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.2 RDS(ON), ON-RESISTANCE (OHM) 1.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 o ID = -16A VGS = -4.5V ID = -8A 0.16 0.12 TA = 125 C 0.08 TA = 25 C 0.04 o o 0 125 150 175 1.5 2 2.5 3 3.5 4 4.5 5 TJ, JUNCTION TEMPERATURE ( C) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. 20 VDS = -5V -ID, DRAIN CURRENT (A) 16 TA = -55 C 25 C 125 C o o o Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 -IS, REVERSE DRAIN CURRENT (A) VGS = 0V 1 12 TA = 125 C 25 C -55 C o o o 8 0.01 4 0 0 0.5 1 1.5 2 2.5 3 3.5 4 0.0001 0 0.4 0.8 1.2 1.6 -VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDP4020P Rev. A F DP4020P Typical Characteristics 5 -VGS, GATE-SOURCE VOLTAGE (V) ID = -16A 4 (continued) VDS = -5V -10V 1400 1200 CAPACITANCE (pF) 1000 800 600 400 200 COSS CRSS 0 4 8 12 16 20 CISS f = 1 MHz VGS = 0 V -15V 3 2 1 0 0 3 6 Qg, GATE CHARGE (nC) 9 12 0 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate-Charge Characteristics. 100 RDS(ON) LIMIT -ID, DRAIN CURRENT (A) 100µs 1ms POWER (W) 10ms DC 100ms Figure 8. Capacitance Characteristics. 1000 SINGLE PULSE 800 RθJC = 4 C/W TA = 25 C 600 o o 10 1 400 VGS = -4.5V SINGLE PULSE RθJC = 4 C/W TA = 25 C o o 200 0.1 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) 100 0 0.0001 0.001 0.01 0.1 1 10 SINGLE PULSE TIME (SEC) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 1 TRANSIENT THERMAL RESISTANCE r(t), NORMALIZED EFFECTIVE 0.5 D = 0.5 R θJC (t) = r(t) * R θJC R θJC = 4°C/W 0.1 0.2 0.2 0.05 Single Pulse P(pk) t1 t2 0.1 TJ - TA = P * R θJC (t) Duty Cycle, D = t 1 / t 2 0.001 0.01 t1 , TIME (sec) 0.1 1 10 0.05 0.0001 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1. Transient themal response will change depending on the circuit board design. FDP4020P Rev. A TO-220 Tape and Reel Data and Package Dimensions TO-220 Tube Packing Configuration: Figur e 1.0 Packaging Description: TO-220 parts are ship ped normally in tube. The tube is made of PVC plastic treated with anti -stati c agent.These tubes in standard option are placed inside a dissipative plastic bag, barcode labeled, and placed inside a box made of recyclable corrugated pa per. One box contains two ba gs maximum (see fig. 1.0). And one or several o f these boxes are placed inside a labeled shipp ing bo x whic h c omes in different sizes dependi ng on the nu mber of parts ship ped. The other option comes in bulk as described in the Packagin g Information table. The unit s in this option are placed inside a small box laid w ith antistatic bubble sheet. These smaller boxes are individually labeled and placed ins ide a larger box (see fig. 3.0). These larger or intermediate boxes then will b e placed finally inside a labeled shipping box whic h still comes in different sizes depending on the number of units shipped. 45 unit s per Tube 12 Tubes per Bag 2 bag s per Box Conduct ive Plasti c B ag 530mm x 130mm x 83mm Intermediate box TO-220 Packaging Information: Figure 2.0 TO-220 Packaging Information Packaging Option Packaging type Qty per Tube/Box Box Dimension (mm) Max qty per Box Weight per unit (gm) Note/Comments Standard (no f l ow code ) FSCINT Labe l samp le FAIRCHILD SEMICONDUCTOR CORPORATION 1080 uni ts maxi mum quant it y per bo x S62Z BULK 300 LOT: CBVK741B019 QTY: HTB:B 1080 NSID: FDP7060 SPEC: Rail/Tube 45 530x130x83 1,080 1.4378 D/C1: D9842 SPEC REV: QA REV: B2 114x102x51 1,500 1.4378 FSCINT Label (FSCINT) TO-220 bulk Packing Configuration: Figure 3.0 FSCINT Label An ti-stati c Bubbl e Sheet s 530mm x 130mm x 83mm Intermediate box 1500 uni ts maxi mum quant it y per intermediate box 300 units per EO70 box 114mm x 102mm x 51mm EO70 Immed iate Box 5 EO70 boxe s per per Interm ediate Bo x FSCINT Label TO-220 Tube Configuration: Figure 4.0 Note: All dim ensions are in inches 0.123 +0.001 -0.003 0.165 0.080 0.450 ±.030 1.300 ±.015 0.032 ±.003 0.275 F 9852 NDP4060L F 9852 NDP4060L F 9852 NDP4060L F 9852 NDP4060L F 9852 NDP4060L F 9852 NDP4060L F 9852 NDP4060L F 9852 NDP4060L F 9852 NDP4060L F 9852 NDP4060L F 9852 NDP4060L F 9852 NDP4060L 0.160 20.000 +0.031 -0.065 0.800 0.275 August 1999, Rev. B TO-220 Tape and Reel Data and Package Dimensions, continued TO-220 (FS PKG Code 37) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 1.4378 September 1998, Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ E2CMOSTM FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ DISCLAIMER ISOPLANAR™ MICROWIRE™ POP™ PowerTrench™ QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 TinyLogic™ UHC™ VCX™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.