FDP4020P_00

F DP4020P September 2000 FDP4020P/FDB4020P P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description This P-Channel low threshold MOSFET has been designed for use as a linear pass element for low voltage outputs. In addition, the part may be used as a low voltage load switch when switching outputs on or off for power management.The part may also be used in conjunction with DC-DC converters requiring P-Channel. Features • -16 A, -20 V. RDS(on) = 0.08 Ω @ VGS = -4.5 V RDS(on) = 0.11 Ω @ VGS = -2.5 V. • Critical DC electrical parameters specified at elevated temperature. • High density cell design for extremely low RDS(on). • TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications. • 175°C maximum junction temperature rating. S G D A bsolute M axim um Ratings Sym bol V DSS V G SS ID PD T J , T STG R θ JC R θ JA Drain-S ource V oltage G ate-S ource V oltage Drain Current - Continuous - P ulsed T A = 2 5°C unless otherw ise noted Param eter FD P4020P -20 ±8 -16 -48 37.5 FD B 4020P U nits V V A W W /° C °C ° C/W ° C/W Total P ower Dissipation @ T C = 2 5 ° C D erate above 25 ° C O perating and S torage Junction Tem perature Range 0.25 -65 to +175 Therm al C haracteristics Therm al Resistance, Junction-to- Case Therm al Resistance, Junction-to- A m bient (N ote 1) 4 62.5 40 Package O utlines and O rdering Inform ation D evice M arking FDP 4020P D evice FDP 4020P R eel Size 13’’ Tape W idth 12m m Q uantity 2500 units 2000 Fairchild Semiconductor International FDP4020P Rev. B F DP4020P Electrical Characteristics Symbol BVDSS ∆BVDSS ∆T J IDSS IGSSF IGSSR TA = 25°C unless otherwise noted Parameter Test Conditions Min -20 Typ Max Units V Off Characteristics Drain-Source Breakdown VGS = 0 V, ID = -250 µA Voltage Breakdown Voltage ID = -250 µA, Referenced to 25°C Temperature Coefficient Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse (Note 2) -28 -1 100 -100 mV/°C µA nA nA VGS = 8 V, VDS = 0 V VGS = -8 V, VDS = 0 V On Characteristics VGS(th) ∆VGS(th) ∆T J RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance VDS = VGS, ID = -250 µA ID = -250 µA, Referenced to 25°C VGS = -4.5 V,ID = -8 A, VGS = -4.5 V,ID = -8 A,TJ=125°C VGS = -2.5 V,ID = -7 A VGS = -4.5 V, VDS = -5 V VDS = -5 V, ID = -8 A -0.4 -0.58 2 0.068 0.098 0.096 -1 V mV/°C 0.08 0.13 0.110 Ω ID(on) gFS -20 14 A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = -10 V, VGS = 0 V, f = 1.0 MHz 665 270 70 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = -5 V, ID = -1 A, VGS = -4.5 V, RGEN = 6 Ω 8 24 50 29 16 38 80 45 13 ns ns ns ns nC nC nC VDS = -5 V, ID = -16 A, VGS = -4.5 V 9.5 1.3 2.2 Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = -16 A (Note 2) (Note 2) (Note 2) -16 -48 -1.2 A V Notes: 1. RθJA is the sum of the juntion-to-case and case-to-ambient thermal resistance.For T0-263 the device is mounted on circuit board with a 1in2 pad of 2 oz. copper. 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% FDP4020P Rev. B F DP4020P Typical Characteristics 40 -4.0V -3.5V 24 -3.0V 2 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = -4.5V -ID, DRAIN CURRENT (A) 32 1.8 VGS = -2.0V 1.6 1.4 1.2 1 0.8 -2.5V -3.0V -3.5V -4.0V -4.5V 16 -2.5V 8 -2.0V 0 0 2 4 6 8 10 0 5 10 15 20 25 30 -VDS, DRAIN-SOURCE VOLTAGE (V) -ID, DIRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.2 RDS(ON), ON-RESISTANCE (OHM) 1.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 o ID = -16A VGS = -4.5V ID = -8A 0.16 0.12 TA = 125 C 0.08 TA = 25 C o o 0.04 0 125 150 175 1.5 2 2.5 3 3.5 4 4.5 5 TJ, JUNCTION TEMPERATURE ( C) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. 20 VDS = -5V -ID, DRAIN CURRENT (A) 16 TA = -55 C 25 C 125 C o o o Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 -IS, REVERSE DRAIN CURRENT (A) VGS = 0V 1 12 TA = 125 C 25 C -55 C o o o 8 0.01 4 0 0 0.5 1 1.5 2 2.5 3 3.5 4 0.0001 0 0.4 0.8 1.2 1.6 -VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDP4020P Rev. B F DP4020P Typical Characteristics 5 -VGS, GATE-SOURCE VOLTAGE (V) ID = -16A 4 (continued) VDS = -5V -10V 1400 1200 CAPACITANCE (pF) 1000 800 600 400 200 COSS CRSS 0 4 8 12 16 20 CISS f = 1 MHz VGS = 0 V -15V 3 2 1 0 0 3 6 Qg, GATE CHARGE (nC) 9 12 0 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate-Charge Characteristics. 100 RDS(ON) LIMIT -ID, DRAIN CURRENT (A) 100µs 1ms Figure 8. Capacitance Characteristics. 1000 SINGLE PULSE 800 POWER (W) RθJC = 4 C/W TA = 25 C 600 o o 10 10ms DC 100ms 1 400 VGS = -4.5V SINGLE PULSE RθJC = 4 C/W T A = 25 C o o 200 0.1 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) 100 0 0.0001 0.001 0.01 0.1 1 10 SINGLE PULSE TIME (SEC) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 1 TRANSIENT THERMAL RESISTANCE r(t), NORMALIZED EFFECTIVE 0.5 D = 0.5 R θJC (t) = r(t) * R θJC R θJC = 4°C/W 0.1 0.2 0.2 0.05 Single Pulse P(pk) t1 t2 0.1 TJ - TA = P * R θJC (t) Duty Cycle, D = t 1 / t 2 0.05 0.0001 0.001 0.01 t1 , TIME (sec) 0.1 1 10 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1. Transient themal response will change depending on the circuit board design. FDP4020P Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. F1