FDPF7N50F

FDP7N50F / FDPF7N50F N-Channel MOSFET November 2007 UniFETTM FDP7N50F / FDPF7N50F N-Channel MOSFET, FRFET 500V, 6A, 1.15Ω Features • RDS(on) = 0.95Ω ( Typ.)@ VGS = 10V, ID = 3A • Low gate charge ( Typ. 15nC) • Low Crss ( Typ. 6.3pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant tm Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction. D G GDS TO-220 FDP Series TO-220F GD S FDPF Series S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC -Continuous (TC = 25oC) -Continuous (TC = 100oC) - Pulsed (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) 200 1.59 -55 to +150 300 6 3.6 24 270 6 20 4.5 38.5 0.3 FDP7N50F 500 ±30 6* 3.6* 24* FDPF7N50F Units V V A A mJ A mJ V/ns W W/oC oC oC Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient FDP7N50F 1.4 0.5 62.5 FDPF7N50F 4.0 62.5 oC/W Units ©2007 Fairchild Semiconductor Corporation FDP7N50F / FDPF7N50F Rev. A 1 www.fairchildsemi.com FDP7N50F / FDPF7N50F N-Channel MOSFET Package Marking and Ordering Information TC = 25oC unless otherwise noted Device Marking FDP7N50F FDPF7N50F Device FDP7N50F FDPF7N50F Package TO-220 TO-220F Reel Size Tape Width Quantity 50 50 Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Body Leakage Current ID = 250µA, VGS = 0V, TJ = 25oC ID = 250µA, Referenced to 25 C o 500 - 0.5 - 10 100 ±100 V V/oC µA nA VDS = 500V, VGS = 0V VDS = 400V, TC = 125oC VGS = ±30V, VDS = 0V On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250µA VGS = 10V, ID = 3A VDS = 40V, ID = 3A (Note 4) 3.0 - 0.95 4.3 5.0 1.15 - V Ω S Dynamic Characteristics Ciss Coss Crss Qg(tot) Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain “Miller” Charge VDS = 400V, ID = 6A VGS = 10V (Note 4, 5) VDS = 25V, VGS = 0V f = 1MHz - 720 85 6.3 15 4.5 6 960 115 10 20 - pF pF pF nC nC nC Switching Characteristics td(on) tr td(off) tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 250V, ID = 6A RG = 25Ω (Note 4, 5) - 17 30 35 20 45 70 80 50 ns ns ns ns Drain-Source Diode Characteristics IS ISM VSD trr Qrr Maximum Continuous Drain to Source Diode Forward Current Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, ISD = 6A VGS = 0V, ISD = 6A dIF/dt = 100A/µs (Note 4) - 85 0.15 6 24 1.5 - A A V ns µC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 13mH, IAS = 6A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 6A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FDP7N50F / FDPF7N50F Rev. A 2 www.fairchildsemi.com FDP7N50F / FDPF7N50F N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics 28 VGS = 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Figure 2. Transfer Characteristics 20 10 ID,Drain Current[A] 10 ID,Drain Current[A] 150 C o 25 C o 1 0.1 0.04 0.1 *Notes: 1. 250µs Pulse Test 2. TC = 25 C o *Notes: 1. VDS = 20V 2. 250µs Pulse Test 1 VDS,Drain-Source Voltage[V] 10 20 1 5 6 7 8 9 VGS,Gate-Source Voltage[V] 10 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 2.4 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 100 RDS(ON) [Ω], Drain-Source On-Resistance IS, Reverse Drain Current [A] 1.8 10 150 C o 25 C o VGS = 10V 1.2 VGS = 20V 1 *Notes: 1. VGS = 0V 0.6 0 4 *Note: TJ = 25 C o 8 12 ID, Drain Current [A] 16 0.1 0.0 2. 250µs Pulse Test 0.5 1.0 1.5 VSD, Body Diode Forward Voltage [V] 2.0 Figure 5. Capacitance Characteristics 1500 Coss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Figure 6. Gate Charge Characteristics 10 VGS, Gate-Source Voltage [V] VDS = 100V VDS = 250V VDS = 400V 1200 Ciss 8 Capacitances [pF] 900 *Note: 1. VGS = 0V 2. f = 1MHz 6 600 Crss 4 300 2 *Note: ID = 6A 0 0.1 0 1 10 VDS, Drain-Source Voltage [V] 30 0 4 8 12 Qg, Total Gate Charge [nC] 16 FDP7N50F / FDPF7N50F Rev. A 3 www.fairchildsemi.com FDP7N50F / FDPF7N50F N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 Figure 8. Maximum Safe Operating Area - FDPF7N50F 50 10µs BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.1 ID, Drain Current [A] 10 100µs 1ms 10ms 100ms 1.0 1 Operation in This Area is Limited by R DS(on) DC 0.9 *Notes: 1. VGS = 0V 2. ID = 250µA 0.1 *Notes: 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o o 0.8 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 0.01 1 10 100 VDS, Drain-Source Voltage [V] 1000 Figure 9. Maximum Drain Current vs. Case Temperature - FDPF7N50F 6.0 4.8 ID, Drain Current [A] 3.6 2.4 1.2 0.0 25 50 75 100 o 125 TC, Case Temperature [ C] 150 Figure 10. Transient Thermal Response Curve - FDPF7N50F 10 1 ZθJC(t), Thermal Response D=0.5 10 0 0.2 0.1 0.05 PDM PDM t1 * Notes : 10 -1 0.02 0.01 t1 t2 o t2 10 -2 -5 single pulse 10 -4 1. Z θJC(t) = 4.0 C/W Max. 2. Duty Factor, D=t1/t2 3. T JM - T C = P DM * Z θJC(t) 10 10 -3 10 -2 10 -1 10 0 10 1 t1, Square Wave Pulse Duration [sec] FDP7N50F / FDPF7N50F Rev. A 4 www.fairchildsemi.com FDP7N50F / FDPF7N50F N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDP7N50F / FDPF7N50F Rev. A 5 www.fairchildsemi.com FDP7N50F / FDPF7N50F N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + V DS _ I SD L D r iv e r R G S am e T ype as DUT V DD V GS • d v / d t c o n t r o lle d b y R G • I S D c o n t r o lle d b y p u ls e p e r io d V GS ( D r iv e r ) G a te P u ls e W id t h D = -------------------------G a t e P u ls e P e r io d 10V IF M , B o d y D io d e F o r w a r d C u r r e n t I SD (DUT ) IR M d i/d t B o d y D io d e R e v e r s e C u r r e n t V DS (DUT ) B o d y D io d e R e c o v e r y d v / d t V SD V DD B o d y D io d e F o r w a r d V o lta g e D r o p FDP7N50F / FDPF7N50F Rev. A 6 www.fairchildsemi.com FDP7N50F / FDPF7N50F N-Channel MOSFET Mechanical Dimensions TO-220 9.90 ±0.20 1.30 ±0.10 2.80 ±0.10 (8.70) ø3.60 ±0.10 (1.70) 4.50 ±0.20 1.30 –0.05 +0.10 9.20 ±0.20 (1.46) 13.08 ±0.20 (1.00) (3.00) 15.90 ±0.20 1.27 ±0.10 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] 10.08 ±0.30 18.95MAX. (3.70) (45° ) 0.50 –0.05 +0.10 2.40 ±0.20 10.00 ±0.20 FDP7N50F / FDPF7N50F Rev. A 7 www.fairchildsemi.com FDP7N50F / FDPF7N50F N-Channel MOSFET Mechanical Dimensions TO-220F 3.30 ±0.10 10.16 ±0.20 (7.00) ø3.18 ±0.10 2.54 ±0.20 (0.70) 6.68 ±0.20 15.80 ±0.20 (1.00x45°) MAX1.47 9.75 ±0.30 0.80 ±0.10 (3 ) 0° 0.35 ±0.10 2.54TYP [2.54 ±0.20] #1 0.50 –0.05 2.54TYP [2.54 ±0.20] 4.70 ±0.20 +0.10 2.76 ±0.20 9.40 ±0.20 Dimensions in Millimeters 15.87 ±0.20 www.fairchildsemi.com FDP7N50F / FDPF7N50F Rev. A 8 FDP7N50F / FDPF7N50F N-Channel MOSFET TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I31 Preliminary First Production No Identification Needed Full Production Obsolete Not In Production 9 FDP7N50F / FDPF7N50F Rev. A www.fairchildsemi.com