FDU6680A

FDD6680A/FDU6680A June 2003 FDD6680A/FDU6680A 30V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(ON) in a small package. Features • 56 A, 30 V RDS(ON) = 9.5 mΩ @ VGS = 10 V RDS(ON) = 13 mΩ @ VGS = 4.5 V • Low gate charge • Fast Switching • High performance trench technology for extremely low RDS(ON) Applications • DC/DC converter • Motor Drives D D G S I-PAK (TO-251AA) GDS G D-PAK TO-252 (TO-252) S Absolute Maximum Ratings Symbol VDSS VGSS ID TA=25oC unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @TC=25°C @TA=25°C Pulsed (Note 3) (Note 1a) (Note 1a) (Note 3) (Note 1a) (Note 1b) Ratings 30 ±20 56 14 100 60 2.8 1.3 –55 to +175 Units V V A PD Power Dissipation @TC=25°C @TA=25°C @TA=25°C W TJ, TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJC RθJA RθJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient (Note 1) (Note 1a) (Note 1b) 2.5 45 96 °C/W Package Marking and Ordering Information Device Marking FDD6680A FDU6680A Device FDD6680A FDU6680A Package D-PAK (TO-252) I-PAK (TO-251) Reel Size 13’’ Tube Tape width 12mm N/A Quantity 2500 units 75 ©2003 Fairchild Semiconductor Corp. FDD6680A/FDU6680A Rev DW) FDD6680A/FDU6680A Electrical Characteristics Symbol EAS IAS TA = 25°C unless otherwise noted Parameter Drain-Source Avalanche Energy Drain-Source Avalanche Current Test Conditions Single Pulse, VDD = 15 V, ID= 14A Min Typ Max Units 174 14 mJ A Drain-Source Avalanche Ratings (Note 2) Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage (Note 2) VGS = 0 V, ID = 250 µA 30 26 1 ±100 V mV/°C µA nA ID = 250 µA,Referenced to 25°C VDS = 24 V, VGS = ±20 V, VGS = 0 V VDS = 0 V On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance On–State Drain Current Forward Transconductance VDS = VGS, ID = 250 µA ID = 250 µA,Referenced to 25°C VGS = 10 V, ID = 14 A VGS = 4.5 V, ID = 12 A VGS = 10 V, ID = 14 A,TJ=125°C VGS = 10 V, VDS = 5 V VDS = 10 V, ID = 14 A 1 1.8 –5 7 10 11 3 V mV/°C mΩ 9.5 13 16 ID(on) gFS 50 56 A S Dynamic Characteristics Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance (Note 2) 1425 VDS = 15 V, f = 1.0 MHz V GS = 0 V, 350 150 1.3 pF pF pF Ω VOSC = 15 mV, f = 1.0 MHz Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge 11 VDD = 15 V, VGS = 10 V, ID = 1 A, RGEN = 6 Ω 9 31 13 14 VDS = 15V, VGS = 5 V ID = 14 A, 4 5 20 18 50 23 20 ns ns ns ns nC nC nC FDD6680A/FDU6680A Rev. D(W) FDD6680A/FDU6680A Electrical Characteristics Symbol IS VSD trr Qrr TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units 2.3 A V nS nC Drain–Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IS = 2.3 A (Note 2) IF = 14 A, diF/dt = 100 A/µs 0.74 23 11 1.2 Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) RθJA = 45°C/W when mounted on a 1in2 pad of 2 oz copper b) RθJA = 96°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. Maximum current is calculated as: PD R DS(ON) where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A FDD6680A/FDU6680A Rev. D(W) FDD6680A/FDU6680A Typical Characteristics 60 3 3.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS=10V 4.0V 2.8 2.6 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0 0.5 1 1.5 2 2.5 VGS = 3.0V 50 ID, DRAIN CURRENT (A) 6.0V 4.5V 40 30 4.0V 4.5V 5.0V 6.0V 10V 20 3.0V 10 0 VDS, DRAIN-SOURCE VOLTAGE (V) 0 10 20 30 40 50 60 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Drain Current and Gate Voltage 0.03 RDS(ON) , ON-RESISTANCE (OHM) 1.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (oC) ID = 14A VGS = 10V ID = 7A 0.025 0.02 TA = 125oC 0.015 0.01 T A = 25o C 0.005 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation withTemperature 60 Figure 4. On-Resistance Variation with Gate-to-Source Voltage 100 IS, REVERSE DRAIN CURRENT (A) VDS = 5V 50 ID, DRAIN CURRENT (A) VGS = 0V 10 TA = 125oC 40 1 0.1 0.01 0.001 25oC -55oC 30 TA =125oC 20 25oC 10 -55oC 0 1.5 2 2.5 3 3.5 4 VGS, GATE TO SOURCE VOLTAGE (V) 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature FDD6680A/FDU6680A Rev. D(W) FDD6680A/FDU6680A Typical Characteristics 10 VGS, GATE-SOURCE VOLTAGE (V) ID = 14A 8 VDS = 10V 20V 6 15V 2000 f = 1MHz VGS = 0 V 1600 CAPACITANCE (pF) CISS 1200 4 800 COSS 2 400 CRSS 0 0 5 10 15 20 25 30 Qg, GATE CHARGE (nC) 0 0 5 10 15 20 25 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics 1000 P(pk), PEAK TRANSIENT POWER (W) 100 Figure 8. Capacitance Characteristics ID, DRAIN CURRENT (A) 100 1ms RDS(ON) LIMIT 10 10s DC VGS = 10V SINGLE PULSE RθJA = 96oC/W TA = 25oC 0.01 0.01 0.1 1 10 10ms 100ms 1s 100µs 80 SINGLE PULSE RθJA = 96°C/W TA = 25°C 60 1 40 0.1 20 100 0 0.01 0.1 1 10 100 1000 VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec) Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Maximum Power Dissipation 1 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE D = 0.5 0.2 0.1 0.1 0.05 0.02 0.0 R θ JA (t) = r(t) * R θ JA R θ JA = 9 6 °C/W P(pk) t1 t2 SINGLE PULSE 0.01 T J - T A = P * R θ JA (t) Duty Cycle, D = t1 / t2 0.001 0.001 0.01 0.1 1 t 1, TIME (sec) 10 100 1000 Figure 11. Transient Thermal Response Curve Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDD6680A/FDU6680A Rev. 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As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I5