FDW256P_08

FDW256P July 2008 FDW256P 30V P-Channel PowerTrench® MOSFET General Description This P -Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). Features • –8 A, –30 V RDS(ON) = 13.5 mΩ @ V GS = –10 V RDS(ON) = 20 mΩ @ V GS = –4.5 V • Extended V GSS range (±25V) for battery applications • High performance trench technology for extremely low RDS(ON) • Low profile TSSOP-8 package Applications • Battery protection • DC/DC conversion • Power management • Load switch D S S D G S S D 5 6 7 8 4 3 2 1 TSSOP-8 Pin 1 Absolute Maximum Ratings Symbol V DSS V GSS ID PD TJ , TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous TA=25oC unless otherwise noted Parameter Ratings –30 ± 25 (Note 1) Units V V A W °C –8 –50 1.3 0.6 –55 to +150 – Pulsed Power Dissipation (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics Rθ JA Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) 96 208 °C/W Package Marking and Ordering Information Device Marking 256P Device FDW256P Reel Size 13’’ Tape width 16mm Quantity 2500 units © 2008 Fairc hild Semiconductor Corporation FDW256P Rev C1(W) FDW256P Electrical Characteristics Symbol BV DSS ∆BV DSS ∆TJ IDSS IGSSF IGSSR TA = 25°C unless otherwise noted Parameter Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate–Body Leakage, Reverse (Note 2) Test Conditions V GS = 0 V, ID = –250 µA ID = –250 µA, Referenced to 25°C V DS = –24 V, V GS = 0 V V GS = 25 V, V DS = 0 V V GS = –25 V, V DS = 0 V V DS = V GS , ID = –250 µA ID = –250 µA, Referenced to 25°C V GS = –10 V, ID = –8.0 A V GS = –4.5 V, ID = –6.5 A V GS =–10 V, ID =–8.0A, TJ =125°C V GS = –10 V, V DS = –5 V, V DS = –5 V ID = –8.0 A Min –30 Typ Max Units V Off Characteristics –23 –1 100 –100 mV/°C µA nA nA On Characteristics V GS(th) ∆V GS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance On–State Drain Current Forward Transconductance –1 –1.7 5 11 16 15 –3 V mV/°C 13.5 20 19 mΩ ID(on) gFS –50 30 A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) V DS = –15 V, f = 1.0 MHz V GS = 0 V, 2267 599 315 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge V DD = –15 V, V GS = –10 V, ID = –1 A, RGEN = 6 Ω 15 11 78 45 27 35 125 72 38 ns ns ns ns nC nC nC V DS = –15 V, V GS = –5.0V ID = –8.0 A, 28 7 12 Drain–Source Diode Characteristics and Maximum Ratings IS V SD Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) RθJA is 96 °C/W (steady state) when mounted on a 1 inch² copper pad on FR-4. b) RθJA is 208 °C/W (steady state) when mounted on a minimum copper pad on FR-4. 2. Pulse Test: Pulse Width < 300µ s, Duty Cycle < 2.0% Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward V GS = 0 V, IS = –1.2 A Voltage –1.2 (Note 2) A V –0.7 –1.2 FDW256P Rev C1 (W) FDW256P Typical Characteristics 50 VGS = - 10V -6.0V 40 -I D, DRAIN CURRENT (A) -4.5V -4.0V 2.2 -3.5V RDS(ON) NORMALIZED , DRAIN-SOURCE ON-RESISTANCE 2 1.8 1.6 1.4 1.2 1 0.8 0 10 20 30 40 50 -I D, DRAIN CURRENT (A) -4.0V -4.5V -5.0V -6.0V -10V VGS = -3.5V 30 20 -3.0V 10 0 0 0.5 1 1.5 2 2.5 3 -V DS , DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.05 RDS(ON) ON-RESISTANCE (OHM) , 1.6 RDS(ON) NORMALIZED , DRAIN-SOURCE ON-RESISTANCE ID = - 8A V GS = - 10V 1.4 ID = -4.0A 0.04 1.2 0.03 TA = 125o C 0.02 T A = 25o C 0.01 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ , JUNCTION TEMPERATURE (oC) 0 2 4 6 8 10 -V GS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. 50 -I S, REVERSE DRAIN CURRENT (A) V DS = -5.0V 40 -ID, DRAIN CURRENT (A) 125o C 30 T A = -55o C 25oC Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 V GS = 0V 10 T A = 125o C 1 25o C 0.1 -55 oC 0.01 20 10 0.001 0 1 1.5 2 2.5 3 3.5 4 -V GS, GATE TO SOURCE VOLTAGE (V) 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -V SD , BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDW256P Rev C1(W) FDW256P Typical Characteristics 10 -V GS, GATE-SOURCE VOLTAGE (V) ID = - 8A 8 -20V CAPACITANCE (pF) 6 V DS = - 10V -15V 4000 f = 1 MHz V GS = 0 V 3200 CISS 2400 4 1600 COSS 800 CRSS 2 0 0 10 20 30 40 50 Q g, GATE CHARGE (nC) 0 0 5 10 15 20 25 30 -V DS , DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) 1ms RDS(ON) LIMIT 10ms 100ms 1s 1 V GS = - 10V SINGLE PULSE Rθ JA = 208o C/W T A = 25o C 0.01 0.01 DC 10s 50 Figure 8. Capacitance Characteristics. 40 -ID, DRAIN CURRENT (A) 10 SINGLE PULSE RθJA = 208°C/W TA = 25°C 30 20 0.1 10 0.1 1 10 100 0 0.01 0.1 1 t 1, TIME (sec) 10 100 -V DS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 0.1 0.1 0.05 RθJA(t) = r(t) + RθJA o RθJA = 208 C/W P(pk) 0.02 0.01 0.01 t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDW256P Rev C1(W) TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. 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Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I35