FDW258P_08

FDW258P July 2008 FDW258P P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel 1.8V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (1.8V – 8V). Features • –9 A, –12 V. RDS(ON) = 11 mΩ @ VGS = –4.5 V RDS(ON) = 14 mΩ @ VGS = –2.5 V RDS(ON) = 20 mΩ @ VGS = –1.8 V Applications • Load switch • Motor drive • DC/DC conversion • Power management • Rds ratings for use with 1.8 V logic • Low gate charge • High performance trench technology for extremely low RDS(ON) • Low profile TSSOP-8 package D S S D G S S D Pin 1 5 6 7 8 4 3 2 1 TSSOP-8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation TA=25oC unless otherwise noted Parameter Ratings –12 ±8 (Note 1) Units V V A W °C –9 –50 1.3 0.6 –55 to +150 (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) 87 114 °C/W Package Marking and Ordering Information Device Marking 258P Device FDW258P Reel Size 13’’ Tape width 12mm Quantity 2500 units 2008 Fairchild Semiconductor Corporation FDW258P Rev D1 (W) FDW258P Electrical Characteristics Symbol BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR VGS(th) ∆VGS(th) ∆TJ RDS(on) TA = 25°C unless otherwise noted Parameter Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate–Body Leakage, Reverse (Note 2) Test Conditions VGS = 0 V, ID = –250 µA Min –12 Typ Max Units V Off Characteristics ID = –250 µA, Referenced to 25°C VDS = –10 V, VGS = 8 V, VGS = –8 V. VGS = 0 V VDS = 0 V VDS = 0 V ID = –250 µA –0.4 –0.6 3 8.6 10.6 13.8 11.2 –50 50 5049 1943 1226 17 23 201 148 VDS = –6 V, VGS = –4.5 V ID = –9 A, 61 8 16 –1.25 (Note 2) –3 –1 100 –100 –1.5 mV/°C µA nA nA V mV/°C 11 14 20 14 mΩ On Characteristics Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance VDS = VGS, ID = –250 µA, Referenced to 25°C VGS = –4.5 V, ID = –9 A VGS = –2.5 V, ID = –8 A VGS = –1.8 V, ID = –6.5 A VGS =–4.5 V, ID = –9A, TJ=125° VGS = –4.5 V, VDS = –5 V, VDS = –5 V ID = –9 A ID(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD On–State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) A S pF pF pF 31 37 322 237 73 ns ns ns ns nC nC nC A V Dynamic Characteristics VDS = –5 V, f = 1.0 MHz V GS = 0 V, Switching Characteristics Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge VDD = –6 V, VGS = –4.5 V, ID = –1 A, RGEN = 6 Ω Drain–Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward Voltage VGS = 0 V, IS = –1.25 A –0.6 –1.2 Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 87°C/W when mounted on a 1in2 pad of 2 oz copper. b) 114°C/W when mounted on a minimum pad of 2 oz copper. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDW258P Rev. D1 (W) FDW258P Typical Characteristics 80 VGS = -4.5V -3.5V -2.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.2 -2.0V 2 -ID, DRAIN CURRENT (A) 60 -1.8V 40 VGS = - 1.8V 1.8 1.6 1.4 -2.0V -2.5V 20 1.2 1 0.8 0 20 -3.0V -3.5V -4.5V 0 0 0.5 1 1.5 2 2.5 3 -VDS, DRAIN TO SOURCE VOLTAGE (V) 40 -ID, DRAIN CURRENT (A) 60 80 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.025 RDS(ON), ON-RESISTANCE (OHM) 1.3 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = -9A VGS = - 4.5V 1.2 ID = -4.5A 0.021 1.1 0.017 TA = 125oC 0.013 1 TA = 25oC 0.009 0.9 0.8 -50 -25 0 25 50 75 100 o 0.005 125 150 1 2 3 4 5 TJ, JUNCTION TEMPERATURE ( C) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. 80 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 VDS = -5V -ID, DRAIN CURRENT (A) 60 -IS, REVERSE DRAIN CURRENT (A) TA = -55oC 125oC 25oC VGS = 0V 1 TA = 125oC 0.1 25oC 40 0.01 20 0.001 -55oC 0 0.5 1 1.5 2 2.5 -VGS, GATE TO SOURCE VOLTAGE (V) 0.0001 0 0.2 0.4 0.6 0.8 1 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDW258P Rev. D1 (W) FDW258P Typical Characteristics 5 -VGS, GATE-SOURCE VOLTAGE (V) 7000 ID = -9A VDS = -4V -6V CAPACITANCE (pF) 6000 5000 4000 3000 2000 CRSS 1000 COSS f = 1 MHz VGS = 0 V 4 CISS -8V 3 2 1 0 0 10 20 30 40 50 60 Qg, GATE CHARGE (nC) 0 0 3 6 9 12 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100 RDS(ON) LIMIT -ID, DRAIN CURRENT (A) 10 100ms 1s 10s DC 100µs 1ms 10ms Figure 8. Capacitance Characteristics. 50 SINGLE PULSE RθJA = 114°C/W TA = 25°C P(pk), PEAK TRANSIENT POWER (W) 40 30 1 VGS = -4.5V SINGLE PULSE RθJA = 114oC/W TA = 25oC 20 0.1 10 0.01 0.01 0.1 1 10 100 0 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 RθJA(t) = r(t) + RθJA RθJA = 114 C/W P(pk) t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 o 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDW258P Rev. D1 (W) TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. 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