FGA25N120ANTD

FGA25N120ANTD/FGA25N120ANTD_F109 1200V NPT Trench IGBT u July, 2007 FGA25N120ANTD/FGA25N120ANTD_F109 1200V NPT Trench IGBT Features • NPT Trench Technology, Positive temperature coefficient • Low saturation voltage: VCE(sat), typ = 2.0V @ IC = 25A and TC = 25°C • Low switching loss: Eoff, typ = 0.96mJ @ IC = 25A and TC = 25°C • Extremely enhanced avalanche capability tm Description Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating, microwave oven, etc. C G TO-3PN GCE E Absolute Maximum Ratings Symbol VCES VGES IC ICM IF IFM PD TJ Tstg TL Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current (Note 1) Description Collector-Emitter Voltage @ TC = 25°C @ TC = 100°C @ TC = 100°C @ TC = 25°C @ TC = 100°C FGA25N120ANTD 1200 ± 20 50 25 90 25 150 312 125 -55 to +150 -55 to +150 300 Units V V A A A A A W W °C °C °C Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds Thermal Characteristics Symbol RθJC RθJC RθJA Parameter Thermal Resistance, Junction-to-Case for IGBT Thermal Resistance, Junction-to-Case for Diode Thermal Resistance, Junction-to-Ambient Typ. ---- Max. 0.4 2.0 40 Units °C/W °C/W °C/W ©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FGA25N120ANTD / FGA25N120ANTD_F109 Rev. B2 FGA25N120ANTD/FGA25N120ANTD_F109 1200V NPT Trench IGBT Package Marking and Ordering Information Device Marking FGA25N120ANTD Device FGA25N120ANTD Package TO-3P Reel Size -- Tape Width -- Quantity 30 Electrical Characteristics of the IGBT Symbol Off Characteristics ICES IGES Collector Cut-Off Current G-E Leakage Current TC = 25°C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V --- --- 3 ± 250 mA nA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 25mA, VCE = VGE IC = 25A, VGE = 15V IC = 25A, VGE = 15V, TC = 125°C IC = 50A, Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---3700 130 80 ---pF pF pF VGE = 15V 3.5 ---5.5 2.0 2.15 2.65 7.5 2.5 --V V V V Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Notes: (1) Repetitive rating: Pulse width limited by max. junction temperature Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCC = 600 V, IC = 25A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 25°C -------- 50 60 190 100 4.1 0.96 5.06 50 60 200 154 4.3 1.5 5.8 200 15 100 -90 -180 6.2 1.5 7.7 ----6.9 2.4 9.3 300 23 150 ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ nC nC nC VCC = 600 V, IC = 25A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 125°C -------- VCE = 600 V, IC = 25A, VGE = 15V ---- 2 FGA25N120ANTD / FGA25N120ANTD_F109 Rev. B2 www.fairchildsemi.com FGA25N120ANTD/FGA25N120ANTD_F109 1200V NPT Trench IGBT Electrical Characteristics of DIODE T Symbol VFM trr Irr Qrr C = 25°C unless otherwise noted Parameter Diode Forward Voltage IF = 25A Test Conditions TC = 25°C TC = 125°C TC = 25°C TC = 125°C TC = 25°C TC = 125°C TC = 25°C TC = 125°C Min. --------- Typ. 2.0 2.1 235 300 27 31 3130 4650 Max. 3.0 -350 -40 -4700 -- Units V Diode Reverse Recovery Time IF = 25A dI/dt = 200 A/µs ns Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge A nC 3 FGA25N120ANTD / FGA25N120ANTD_F109 Rev. B2 www.fairchildsemi.com FGA25N120ANTD/FGA25N120ANTD_F109 1200V NPT Trench IGBT Typical Performance Characteristics Figure 1. Typical Output Characteristics 180 160 140 Figure 2. Typical Saturation Voltage Characteristics 120 Common Emitter VGE = 15V TC = 25°C TC = 125°C 80 TC = 25°C 20V 17V 15V 12V 10V 100 Collector Current, IC [A] 120 100 80 60 40 7V 20 VGE = 6V 0 0 2 4 6 8 10 8V 9V Collector Current, IC [A] 60 40 20 0 0 1 2 3 4 5 Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] Figure 3. Saturation Voltage vs. Case Temperature at Variant Current Level 3.0 Common Emitter VGE = 15V Figure 4. Saturation Voltage vs. VGE 20 Common Emitter TC = -40°C Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] 16 2.5 40A 12 2.0 IC = 25A 8 40A 25A 4 IC = 12.5A 1.5 25 50 75 100 125 0 0 4 8 12 16 20 Case Temperature, TC [°C] Gate-Emitter Voltage, VGE [V] Figure 5. Saturation Voltage vs. VGE 20 Figure 6. Saturation Voltage vs. VGE 20 Common Emitter TC = 25°C Common Emitter TC = 125°C Collector-Emitter Voltage, VCE [V] 16 Collector-Emitter Voltage, VCE [V] 16 12 12 8 40A 25A 8 4 40A 25A 4 IC = 12.5A IC = 12.5A 0 0 4 8 12 16 20 0 0 4 8 12 16 20 Gate-Emitter Voltage, VGE [V] Gate-Emitter Voltage, VGE [V] 4 FGA25N120ANTD / FGA25N120ANTD_F109 Rev. B2 www.fairchildsemi.com FGA25N120ANTD/FGA25N120ANTD_F109 1200V NPT Trench IGBT Typical Performance Characteristics Figure 7. Capacitance Characteristics 5000 4500 4000 3500 Ciss Common Emitter VGE = 0V, f = 1MHz TC = 25°C (Continued) Figure 8. Turn-On Characteristics vs. Gate Resistance 100 Switching Time [ns] Capacitance [pF] 3000 2500 2000 1500 1000 Coss tr td(on) Common Emitter VCC = 600V, VGE = ±15V IC = 25A TC = 25°C TC = 125°C 10 500 0 Crss 1 10 0 10 20 30 40 50 60 70 Collector-Emitter Voltage, VCE [V] Gate Resistance, RG [Ω ] Figure 9. Turn-Off Characteristics vs. Gate Resistance 1000 Figure 10. Switching Loss vs. Gate Resistance Common Emitter VCC = 600V, VGE = ±15V td(off) IC = 25A 10 T C = 25° C TC = 125°C Eon 100 tf Common Emitter VCC = 600V, VGE = ±15V IC = 25A T C = 25° C TC = 125°C 10 0 10 20 30 40 50 60 70 Switching Loss [mJ] Switching Time [ns] Eoff 1 0 10 20 30 40 50 60 70 Gate Resistance, RG [Ω ] Gate Resistance, RG [Ω ] Figure 11. Turn-On Characteristics vs. Collector Current Common Emitter VGE = ±15V, RG = 10Ω T C = 25° C TC = 125°C Figure 12. Turn-Off Characteristics vs. Collector Current td(off) Switching Time [ns] 100 Switching Time [ns] tr 100 tf td(on) Common Emitter VGE = ±15V, RG = 10Ω TC = 25°C TC = 125°C 10 20 30 40 50 10 20 30 40 50 Collector Current, IC [A] Collector Current, IC [A] 5 FGA25N120ANTD / FGA25N120ANTD_F109 Rev. B2 www.fairchildsemi.com FGA25N120ANTD/FGA25N120ANTD_F109 1200V NPT Trench IGBT Typical Performance Characteristics (Continued) Figure 13. Switching Loss vs. Collector Current Common Emitter VGE = ±15V, RG = 10Ω Figure 14. Gate Charge Characteristics 16 TC = 125°C Gate-Emitter Voltage, VGE [V] 10 T C = 25° C Eon 14 12 10 8 6 4 2 0 Common Emitter RL = 24Ω TC = 25°C Vcc = 200V 600V 400V Switching Loss [mJ] Eoff 1 0.1 10 20 30 40 50 0 20 40 60 80 100 120 140 160 180 200 Collector Current, IC [A] Gate Charge, Qg [nC] Figure 15. SOA Characteristics Figure 16. Turn-Off SOA 100 Ic MAX (Pulsed) 50µ s Ic MAX (Continuous) 100µs 100 Collector Current, Ic [A] 10 1ms DC Operation 1 Collector Current, IC [A] 10 0.1 Single Nonrepetitive Pulse T C = 25° C Curves must be derated linearly with increase in temperature Safe Operating Area V GE = 15V, TC = 125° C 1 0.01 0.1 1 10 100 1000 1 10 100 1000 Collector - Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] Figure 17. Transient Thermal Impedance of IGBT 1 10 T h e r m a l R e s p o n s e [ Z t h jc ] 1 0.5 0. 0.2 0.1 0.05 Pdm t1 t2 0 .0 1 0.02 0.01 single pulse 1E-3 1E-5 1E-4 1E-3 0 .0 1 0 .1 Duty factor D = t1 / t2 Peak Tj = Pdm × Zthjc + TC 1 10 R e c t a n g u la r P u ls e D u r a t io n [ s e c ] 6 FGA25N120ANTD / FGA25N120ANTD_F109 Rev. B2 www.fairchildsemi.com FGA25N120ANTD/FGA25N120ANTD_F109 1200V NPT Trench IGBT Typical Performance Characteristics Figure 18. Forward Characteristics 50 (Continued) Figure 19. Reverse Recovery Current 30 Forward Current , IF [A] 10 Reverse Recovery Currnet , Irr [A] 25 di/dt = 200A/µs 20 TJ = 125°C 15 di/dt = 100A/µs 10 1 TJ = 25°C TC = 125°C TC = 25°C 5 0.1 0.0 0.4 0.8 1.2 1.6 2.0 0 5 10 15 20 25 Forward Voltage , VF [V] Forward Current , IF [A] Figure 20. Stored Charge 4000 Figure 21. Reverse Recovery Time 300 di/dt = 100A/µs Stored Recovery Charge , Qrr [nC] 3000 di/dt = 200A/µs Reverse Recovery Time , trr [ns] 200 di/dt = 200A/µs 2000 di/dt = 100A/µs 100 1000 0 5 10 15 20 25 0 5 10 15 20 25 Forward Current , IF [A] Forward Current , IF [A] 7 FGA25N120ANTD / FGA25N120ANTD_F109 Rev. B2 www.fairchildsemi.com FGA25N120ANTD/FGA25N120ANTD_F109 1200V NPT Trench IGBT Mechanical Dimensions (continued) TO-3PN Dimensions in Millimeters 9 FGA25N120ANTD /FGA25N!20ANTD_F109 Rev. B2 www.fairchildsemi.com TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FAST® FASTr™ FPS™ FRFET™ FACT Quiet Series™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ ScalarPump™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ TinyBoost™ TinyBuck™ TinyPWM™ TinyPower™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UniFET™ UltraFET® VCX™ Wire™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I20 Preliminary No Identification Needed Full Production Obsolete Not In Production