FGA30N60LSD

FGA30N60LSD October 2008 FGA30N60LSD Features • Low saturation voltage: VCE(sat) =1.1V @ IC = 30A • High Input Impedance • Low Conduction Loss tm General Description The FGA30N60LSD is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors.This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. Applications • Solar Inverters • UPS, Welder C G E Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IFSM PD TJ Tstg TL Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds @ TC = 25°C @ TC = 100°C @ TC = 25°C @ TC = 100°C FGA30N60LSD 600 ± 20 60 30 90 150 480 192 -55 to +150 -55 to +150 300 Units V V A A A A W W °C °C °C Thermal Characteristics Symbol RθJC(IGBT) RθJC(Diode) RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ. ---- Max. 0.26 0.92 40 Units °C/W °C/W °C/W ©2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FGA30N60LSD Rev. A FGA30N60LSD Package Marking and Ordering Information Device Marking FGA30N60LSD Device FGA30N60LSDTU Package TO-3PN Packaging Type Tube Max Qty Qty per Tube 30ea per Box - Electrical Characteristics of the IGBT Symbol Off Characteristics BVCES ∆BVCES/ ∆TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current TC = 25°C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units VGE = 0V, IC = 250uA VGE = 0V, IC = 250uA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 600 ---- -0.6 --- --250 ±250 V V/°C uA nA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 250uA, VCE = VGE IC = 30A, VGE = 15V IC = 30A, VGE = 15V, TC = 125°C IC = 60 A, VGE = 15V Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---3550 245 90 ---pF pF pF 4.0 ---5.5 1.1 1.0 1.3 7.0 1.4 --V V V V Switching Characteristics td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff Qg Qge Qgc Le Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Internal Emitter Inductance VCE = 300 V, IC = 30A, VGE = 15V Measured 5mm from PKG VCC = 400 V, IC = 30A, RG =6.8Ω, VGE = 15V, Inductive Load, TC = 125°C VCC = 400 V, IC = 30A, RG = 6.8Ω, VGE = 15V, Inductive Load, TC = 25°C ----------------18 46 250 1.3 1.1 21 17 45 270 2.6 1.1 36 225 30 105 7 ---2.0 ------------ns ns ns us mJ mJ ns ns ns us mJ mJ nC nC nC nH 2 FGA30N60LSD Rev. A www.fairchildsemi.com FGA30N60LSD Electrical Characteristics of the Diode Parameter VFM IRM trr ta tb Qrr IF = 15A IF = 15A VR = 600V IF =1A, di/dt = 100A/µs, VCC = 30V IF =15A, di/dt = 100A/µs, VCC = 390V IF =15A, di/dt = 100A/µs, VCC = 390V TC = 25°C unless otherwise noted Conditions TC = 25 °C TC = 125 °C TC = 25 °C TC = 25 °C TC = 25 °C TC = 25 °C TC = 25 °C TC = 25 °C Min. - Typ. 1.8 1.6 18 13 27.5 Max 2.2 100 35 40 - Units V V µA ns ns ns ns nC 3 FGA30N60LSD Rev. A www.fairchildsemi.com FGA30N60LSD Typical Performance Characteristics Figure 1.Typical Output Characteristics 90 TC = 25 C o Figure 2. Typical Saturation Voltage Characteristics 90 TC = 125 C o VGE = 20V VGE = 20V 15V 12V 10V 8V Collector Current, IC [A] 60 Collector Current, IC [A] 15V 12V 10V 8V 60 30 30 0 0 1 2 3 Collector-Emitter Voltage, VCE [V] 4 0 0 1 2 3 Collector-Emitter Voltage, VCE [V] 4 Figure 3. Typical Saturation Voltage Characteritics 90 Common Emitter VGE = 15V Figure 4. Transfer characteristics 90 Common Emitter VCE = 20V o o Collector Current, IC [A] 60 TC = 125 C o Collector Current, IC [A] TC = 25 C o TC = 25 C TC = 125 C 60 30 30 0 0 1 2 Collector-Emitter Voltage, VCE [V] 3 0 0 2 4 6 8 10 Gate-Emitter Voltage,VGE [V] 12 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 1.4 Collector-Emitter Voltage, VCE [V] Common Emitter VGE = 15V 60A Figure 6. Saturation Voltage vs. Vge 20 Common Emitter Collector-Emitter Voltage, VCE [V] 16 T = 25 C C o 1.2 12 1.0 30A 8 IC = 15A 0.8 4 30A IC = 15A 60A 0.6 25 0 50 75 100 125 o Collector-EmitterCase Temperature, TC [ C] 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 4 FGA30N60LSD Rev. A www.fairchildsemi.com FGA30N60LSD Typical Performance Characteristics Figure 7. Saturation Voltage vs. Vge 20 Collector-Emitter Voltage, VCE [V] Common Emitter TC = 125 C o (Continued) Figure 8. Capacitance characteristics 13000 10000 Cies 16 Capacitance [pF] 12 Coes Common Emitter VGE = 0V, f = 1MHz TC = 25 C o 1000 Cres 8 30A 60A 4 IC = 15A 100 50 0 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 0 5 10 15 20 25 Collector-Emitter Voltage, VCE [V] 30 Figure 9. Gate Charge Characteristics 15 Common Emitter IC = 30A Figure 10. SOA Characteeristics 300 Ic MAX (Pulsed) Gate-Emitter Voltage, VGE [V] Collector Current, Ic [A] o 12 TC = 25 C 100 Vcc = 100V 300V 200V 50µs Ic MAX (Continuous) 100µs 9 10 1ms 6 1 Single Nonrepetitive o 3 Pulse TC = 25 C Curves must be derated linearly with increase in temperature DC Operation 0 0 50 100 150 200 Gate Charge, Qg [nC] 250 0.1 0.1 1 10 100 1000 Collector-Emitter Voltage, VCE [V] Figure 11. Load Current Vs. Frequency 80 70 60 50 40 30 20 10 0 0.1 Duty cycle : 50% o Tc = 100 C Powe Dissipation = 192W Vcc = 400V load Current : peak of square wave Figure 12. Turn-On Characteristics vs. Gate Resistance 200 100 Switching Time [ns] Load Current [A] tr td(on) Common Emitter VCC = 400V, VGE = 15V IC = 30A TC = 25 C TC = 125 C o o 1 10 100 Frequency [kHz] 1000 10 0 10 20 30 40 50 Gate Resistance, RG [Ω] 5 FGA30N60LSD Rev. A www.fairchildsemi.com FGA30N60LSD Typical Performance Characteristics Figure 13. Turn-Off Characteristics vs. Gate Resistance 3000 (Continued) Figure 14. Turn-On Characteristics vs. Collector Current 500 Common Emitter VGE = 15V, RG = 6.8Ω TC = 25 C o o Switching Time [ns] 1000 tf Switching Time [ns] TC = 125 C 100 tr td(off) Common Emitter VCC = 400V, VGE = 15V IC = 30A TC = 25 C o o td(on) 10 100 0 10 20 TC = 125 C 30 40 50 20 30 40 50 60 70 80 Gate Resistance, RG [Ω] Collector Current, IC [A] Figure 15. Turn-Off Characteristics vs. Collector Current 6000 tf Figure 16. Switching Loss vs Gate Resistance 500 Common Emitter VCC = 400V, VGE = 15V IC = 30A Switching Time [ns] Switching Loss [mJ] o 100 TC = 25 C TC = 125 C o 1000 Common Emitter VGE = 15V, RG = 6.8Ω TC = 25 C td(off) TC = 125 C o o Eoff 10 Eon 100 20 30 40 50 60 70 80 Collector Current, IC [A] 1 5 10 15 20 25 30 35 40 45 50 Gate Resistance, RG [Ω] Figure 17.Switching Loss vs Collector Current 100 Figure 18. Turn-Off Switching SOA Characteristics 200 100 Eoff 10 Eon Collector Current, IC [A] Switching Loss [mJ] 10 1 Common Emitter VGE = 15V, RG = 6.8Ω TC = 25 C TC = 125 C o o Safe Operating Area o VGE = 15V, TC = 125 C 0.1 10 1 20 30 40 50 60 70 80 1 Collector Current, IC [A] 10 100 1000 Collector-Emitter Voltage, VCE [V] 6 FGA30N60LSD Rev. A www.fairchildsemi.com FGA30N60LSD Figure 19. Transient Thermal Impedance of IGBT 1 0.5 Thermal Response [Zthjc] 0.1 0.2 0.1 0.05 0.01 0.02 PDM t1 t2 0.01 single pulse Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 1E-3 1E-5 1E-4 1E-3 0.01 0.1 Rectangular Pulse Duration [sec] 1 10 Figure 20. Typical Forward Voltage Drop Figure 21. Typical Reverse Current 100 1E-4 FPRWARD CURRENT, IF [A] REVERSE CURRENT, IR [A] 1E-5 TC = 125 C o o 10 1E-6 TC=125 C o TC = 75 C 1E-7 1 TC=75 C o 1E-8 TC = 25 C o TC=25 C 0.1 0.0 o 1E-9 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 0 100 200 300 400 500 600 FORWARD VOLTAGE, VF [V] REVERSE VOLTAGE, VR [V] Figure 22. Typical Reverse Recovery Time 200 190 180 170 160 150 140 130 120 110 100 90 80 70 60 50 40 30 20 10 0 100 REVERSE RECOVERY TIME, trr [ns] IF = 15A TC = 125 C o TC = 75 C o TC = 25 C o 200 300 400 500 di/dt [A/µs] 7 FGA30N60LSD Rev. A www.fairchildsemi.com FGA30N60LSD 8 FGA30N60LSD Rev. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I35 Preliminary First Production No Identification Needed Obsolete Full Production Not In Production 9 FGA30N60LSD Rev. A www.fairchildsemi.com