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FGA30N60LSD
600 V, 30 A PT IGBT
Features
General Description
• Low Saturation Voltage: VCE(sat) = 1.1 V @ IC = 30 A
Using Fairchild's advanced PT technology, the FGA30N60LSD
IGBT offers superior conduction performances, which offer the
optimum performance for medium switching application such as
solar inverter, UPS applications where low conduction losses
are the most important factor.
• High Input Impedance
• Low Conduction Loss
Applications
• Solar Inverter, UPS
C
G
E
Absolute Maximum Ratings
Symbol
Description
Ratings
Unit
VCES
Collector-Emitter Voltage
600
V
VGES
Gate-Emitter Voltage
20
V
IC
Collector Current
@ TC = 25C
60
A
Collector Current
@ TC = 100C
30
A
ICM (1)
Pulsed Collector Current
90
A
IFSM
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
150
A
PD
Maximum Power Dissipation
@ TC = 25C
480
W
Maximum Power Dissipation
@ TC = 100C
192
W
TJ
Operating Junction Temperature
-55 to +150
C
Tstg
Storage Temperature Range
-55 to +150
C
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
300
C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
Unit
RJC(IGBT)
Thermal Resistance, Junction-to-Case
--
0.26
C/W
RJC(Diode)
Thermal Resistance, Junction-to-Case
--
0.92
C/W
RJA
Thermal Resistance, Junction-to-Ambient
--
40
C/W
©2008 Fairchild Semiconductor Corporation
FGA30N60LSD Rev.C1
1
www.fairchildsemi.com
FGA30N60LSD — 600 V, 30 A PT IGBT
November 2013
Part Number
Top Mark
FGA30N60LSDTU
FGA30N60LSD
Package Packing Method
TO-3P
Parameter
Tape Width
Quantity
N/A
N/A
30
Tube
Electrical Characteristics of the IGBT
Symbol
Reel Size
TC = 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Unit
600
--
--
V
--
0.6
--
V/C
Off Characteristics
BVCES
Collector-Emitter Breakdown Voltage
VGE = 0 V, IC = 250 uA
BVCES/
TJ
Temperature Coefficient of Breakdown
Voltage
VGE = 0 V, IC = 250 uA
ICES
Collector Cut-Off Current
VCE = VCES, VGE = 0 V
--
--
250
uA
IGES
G-E Leakage Current
VGE = VGES, VCE = 0 V
--
--
±250
nA
4.0
5.5
7.0
V
On Characteristics
VGE(th)
G-E Threshold Voltage
IC = 250 uA, VCE = VGE
IC = 30 A, VGE = 15 V
--
1.1
1.4
V
VCE(sat)
Collector to Emitter
Saturation Voltage
IC = 30 A, VGE = 15 V,
TC = 125C
--
1.0
--
V
IC = 60 A, VGE = 15 V
--
1.3
--
V
--
3550
--
pF
VCE = 30 V, VGE = 0 V,
f = 1 MHz
--
245
--
pF
--
90
--
pF
18
--
ns
Dynamic Characteristics
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
--
tr
Rise Time
--
46
--
ns
td(off)
Turn-Off Delay Time
--
250
--
ns
tf
Fall Time
Eon
Turn-On Switching Loss
Eoff
td(on)
VCC = 400 V, IC = 30 A,
RG = 6.8 , VGE = 15 V,
Inductive Load, TC = 25C
--
1.3
2.0
us
--
1.1
--
mJ
Turn-Off Switching Loss
--
21
--
mJ
Turn-On Delay Time
--
17
--
ns
tr
Rise Time
--
45
--
ns
td(off)
Turn-Off Delay Time
--
270
--
ns
tf
Fall Time
Eon
Turn-On Switching Loss
Eoff
Turn-Off Switching Loss
Qg
Total Gate Charge
Qge
Gate-Emitter Charge
Qgc
Gate-Collector Charge
Le
Internal Emitter Inductance
©2008 Fairchild Semiconductor Corporation
FGA30N60LSD Rev.C1
VCC = 400 V, IC = 30 A,
RG =6.8 , VGE = 15 V,
Inductive Load, TC = 125C
VCE = 300 V, IC = 30 A,
VGE = 15 V
Measured 5mm from PKG
2
--
2.6
--
us
--
1.1
--
mJ
--
36
--
mJ
--
225
--
nC
--
30
--
nC
--
105
--
nC
--
7
--
nH
www.fairchildsemi.com
600 V, 30 A PT IGBT — 600 V, 30 A PT IGBT
Package Marking and Ordering Information
Parameter
TC = 25°C unless otherwise noted
Min.
Typ.
Max
Unit
VFM
IF = 15 A
IF = 15 A
Conditions
TC = 25 C
TC = 125 C
-
1.8
1.6
2.2
-
V
V
IRM
VR = 600 V
TC = 25 C
-
-
100
A
trr
IF =1 A, diF/dt = 100 A/s, VR = 30 V
IF =15 A, diF/dt = 100 A/s, VR = 390 V
TC = 25 C
TC = 25 C
-
-
35
40
ns
ns
ta
tb
Qrr
IF =15 A, diF/dt = 100 A/s, VR = 390 V
TC = 25 C
TC = 25 C
TC = 25 C
-
18
13
27.5
-
ns
ns
nC
©2008 Fairchild Semiconductor Corporation
FGA30N60LSD Rev.C1
3
www.fairchildsemi.com
600 V, 30 A PT IGBT — 600 V, 30 A PT IGBT
Electrical Characteristics of the Diode
Figure 1.Typical Output Characteristics
Figure 2. Typical Saturation Voltage
Characteristics
90
90
o
60
30
15V
12V
10V
8V
60
30
0
0
0
1
2
3
Collector-Emitter Voltage, VCE [V]
4
0
Figure 3. Typical Saturation Voltage
Characteritics
4
90
Common Emitter
VCE = 20V
Common Emitter
VGE = 15V
o
o
TC = 25 C
o
TC = 125 C
60
TC = 25 C
Collector Current, IC [A]
Collector Current, IC [A]
1
2
3
Collector-Emitter Voltage, VCE [V]
Figure 4. Transfer characteristics
90
o
TC = 125 C
60
30
30
0
0
0
1
2
Collector-Emitter Voltage, VCE [V]
0
3
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
Collector-Emitter Voltage, VCE [V]
1.2
30A
IC = 15A
0.8
FGA30N60LSD Rev.C1
o
T = 25 C
C
16
12
8
4
60A
30A
IC = 15A
0
50
75
100
o
Case Temperature, TC [ C]
©2008 Fairchild Semiconductor Corporation
12
Common Emitter
60A
0.6
25
4
6
8
10
Gate-Emitter Voltage,VGE [V]
20
Common Emitter
VGE = 15V
1.0
2
Figure 6. Saturation Voltage vs. Vge
1.4
Collector-Emitter Voltage, VCE [V]
VGE = 20V
TC = 125 C
15V
12V
10V
8V
Collector Current, IC [A]
Collector Current, IC [A]
o
VGE = 20V
TC = 25 C
0
125
4
4
8
12
16
Gate-Emitter Voltage, VGE [V]
20
www.fairchildsemi.com
600 V, 30 A PT IGBT — 600 V, 30 A PT IGBT
Typical Performance Characteristics
(Continued)
Figure 7. Saturation Voltage vs. Vge
20
Figure 8. Capacitance characteristics
13000
10000
Common Emitter
TC = 125 C
Cies
16
Capacitance [pF]
Collector-Emitter Voltage, VCE [V]
o
12
8
30A 60A
TC = 25 C
Cres
4
IC = 15A
100
50
0
4
8
12
16
Gate-Emitter Voltage, VGE [V]
20
0
Figure 9. Gate Charge Characteristics
5
10
15
20
25
Collector-Emitter Voltage, VCE [V]
30
Figure 10. SOA Characteeristics
300
15
Common Emitter
IC = 30A
o
12 TC = 25 C
Ic MAX (Pulsed)
100
Vcc = 100V
9
Collector Current, Ic [A]
Gate-Emitter Voltage, VGE [V]
o
1000
0
300V
200V
6
3
0
0
50
100
150
200
Gate Charge, Qg [nC]
50s
Ic MAX (Continuous)
1ms
1 Single Nonrepetitive
o
Pulse TC = 25 C
Curves must be derated
linearly with increase
in temperature
DC Operation
1
10
100
1000
Collector-Emitter Voltage, VCE [V]
Figure 12. Turn-On Characteristics vs.
Gate Resistance
80
200
Vcc = 400V
70
load Current : peak of square wave
100
Switching Time [ns]
60
50
40
30
tr
Common Emitter
VCC = 400V, VGE = 15V
IC = 30A
td(on)
20
o
TC = 25 C
Duty cycle : 50%
10
100s
10
0.1
0.1
250
Figure 11. Load Current Vs. Frequency
Collector Current [A]
Common Emitter
VGE = 0V, f = 1MHz
Coes
o
TC = 125 C
o
Tc = 100 C
10
Powe Dissipation = 192W
0
0.1
1
10
100
Frequency, f [kHz]
©2008 Fairchild Semiconductor Corporation
FGA30N60LSD Rev.C1
0
10
20
30
40
50
Gate Resistance, RG []
1000
5
www.fairchildsemi.com
600 V, 30 A PT IGBT — 600 V, 30 A PT IGBT
Typical Performance Characteristics
(Continued)
Figure 13. Turn-Off Characteristics vs.
Gate Resistance
Figure 14. Turn-On Characteristics vs.
Collector Current
500
3000
Common Emitter
VGE = 15V, RG = 6.8
o
TC = 25 C
Switching Time [ns]
Switching Time [ns]
o
tf
1000
Common Emitter
VCC = 400V, VGE = 15V
IC = 30A
td(off)
TC = 125 C
100
tr
td(on)
10
o
TC = 25 C
o
TC = 125 C
100
0
10
20
30
40
20
50
30
40
Gate Resistance, RG []
Figure 15. Turn-Off Characteristics vs.
Collector Current
60
70
80
Figure 16. Switching Loss vs
Gate Resistance
6000
500
Common Emitter
VCC = 400V, VGE = 15V
IC = 30A
Switching Loss [mJ]
tf
Switching Time [ns]
50
Collector Current, IC [A]
1000
Common Emitter
VGE = 15V, RG = 6.8
o
TC = 25 C
o
td(off)
TC = 125 C
o
100 TC = 25 C
o
Eoff
TC = 125 C
10
Eon
100
20
30
40
50
60
70
1
80
Collector Current, IC [A]
5
10
15
20
25
30
35
40
45
50
Gate Resistance, RG []
Figure 17.Switching Loss vs Collector Current
Figure 18. Turn-Off Switching
SOA Characteristics
200
100
100
Collector Current, IC [A]
Switching Loss [mJ]
Eoff
10
Eon
1
Common Emitter
VGE = 15V, RG = 6.8
10
o
TC = 25 C
Safe Operating Area
o
VGE = 15V, TC = 125 C
o
TC = 125 C
0.1
10
1
20
30
40
50
60
70
80
1
Collector Current, IC [A]
©2008 Fairchild Semiconductor Corporation
FGA30N60LSD Rev.C1
6
10
100
1000
Collector-Emitter Voltage, VCE [V]
www.fairchildsemi.com
600 V, 30 A PT IGBT — 600 V, 30 A PT IGBT
Typical Performance Characteristics
600 V, 30 A PT IGBT — 600 V, 30 A PT IGBT
Figure 19. Transient Thermal Impedance of IGBT
1
Thermal Response [Zthjc]
0.5
0.1
0.2
0.1
0.05
0.01
0.02
PDM
t1
0.01
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
single pulse
1E-3
1E-5
1E-4
1E-3
0.01
0.1
Rectangular Pulse Duration [sec]
Figure 20. Forward Voltage Drop
10
Figure 21. Reverse Current
1E-4
REVERSE CURRENT, IR [A]
100
FORWARD CURRENT, IF [A]
1
10
o
TC=125 C
1
o
TC=75 C
1E-5
o
TC = 125 C
o
1E-6
TC = 75 C
1E-7
o
TC = 25 C
1E-8
o
TC=25 C
0.1
0.0
1E-9
0.4
0.8
1.2
1.6
2.0
2.4
2.8
0
3.2
100
200
300
400
500
600
REVERSE VOLTAGE, VR [V]
FORWARD VOLTAGE, VF [V]
REVERSE RECOVERY TIME, trr [ns]
Figure 22. Reverse Recovery Time
200
190
180
170
160
150
140
130
120
110
100
90
80
70
60
50
40
30
20
10
0
100
IF = 15A
o
TC = 125 C
o
TC = 75 C
o
TC = 25 C
200
300
400
500
diF/dt [A/s]
©2008 Fairchild Semiconductor Corporation
FGA30N60LSD Rev.C1
7
www.fairchildsemi.com
600 V, 30 A PT IGBT — 600 V, 30 A PT IGBT
Mechanical Dimensions
Figure 23. TO-3P 3L - 3LD, T03, PLASTIC, EIAJ SC-65
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
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©2008 Fairchild Semiconductor Corporation
FGA30N60LSD Rev.C1
8
www.fairchildsemi.com
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
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No Identification Needed
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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I66
©2008 Fairchild Semiconductor Corporation
FGA30N60LSD Rev.C1
9
www.fairchildsemi.com
600 V, 30 A PT IGBT — 600 V, 30 A PT IGBT
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