FGH30N60LSDTU

IGBT - PT 600 V, 30 A FGH30N60LSD Description Using ON Semiconductor ’s advanced PT technology, the FGA30N60LSD IGBT offers superior conduction performances, which offer the optimum performance for medium switching application such as solar inverter, UPS applications where low conduction losses are the most important factor. www.onsemi.com C Features • • • • Low Saturation Voltage: VCE(sat) =1.1 V @ IC = 30 A High Input Impedance Low Conduction Loss This Device is Pb−Free and is RoHS Compliant G E E Applications • Solar Inverter, UPS C G TO−247−3LD CASE 340CK MARKING DIAGRAM $Y&Z&3&K FGH30N60 LSD $Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FGH30N60LSD = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2007 February, 2020 − Rev. 3 1 Publication Order Number: FGH30N60LSD/D FGH30N60LSD ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Rating Unit Collector to Emitter Voltage VCES 600 V Gate to Emitter Voltage VGES ±20 V IC 60 A Description Collector Current TC = 25°C Collector Current TC = 100°C Pulsed Collector Current 30 A ICM (Note 1) 90 A IFSM 150 A PD 480 W 192 W Non−repetitive Peak Surge Current 60 Hz Single Half−Sine Wave Maximum Power Dissipation TC = 25°C Maximum Power Dissipation TC = 100°C Operating Junction Temperature TJ −55 to +150 °C Storage Temperature Range Tstg −55 to +150 °C Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds TL 300 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive Rating: Pulse width limited by max. junction temperature. THERMAL CHARACTERISTICS Symbol Typ Max Unit Thermal Resistance, Junction to Case Parameter RJC(IGBT) − 0.26 °C/W Thermal Resistance, Junction to Case RJC(Diode) − 0.92 °C/W RJA − 40 °C/W Thermal Resistance, Junction to Ambient PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FGH30N60LSDTU FGH30N60LSD TO−247 Tube N/A N/A 30 ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Collector to Emitter Breakdown Voltage BVCES VGE = 0 V, IC = 250 A 600 − − V Temperature Coefficient of Breakdown Voltage BVCES/TJ VGE = 0 V, IC = 250 A − 0.6 − V/°C Collector Cut−Off Current ICES VCE = VCES, VGE = 0 V − − 250 A G−E Leakage Current IGES VGE = VGES, VCE = 0 V − − ±250 nA G−E Threshold Voltage VGE(th) IC = 250 A, VCE = VGE 4.0 5.5 7.0 V Collector to Emitter Saturation Voltage VCE(sat) IC = 30 A, VGE = 15 V − 1.1 1.4 V IC = 30 A, VGE = 15 V, TC = 125°C − 1.0 − V IC = 60 A, VGE = 15 V − 1.3 − V ON CHARACTERISTICs www.onsemi.com 2 FGH30N60LSD ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) (continued) Parameter Symbol Test Conditions Min Typ Max Unit − 3550 − pF DYNAMIC CHARACTERISTICS VCE = 30 V, VGE = 0 V, f = 1 MHz Input Capacitance Cies Output Capacitance Coes − 245 − pF Reverse Transfer Capacitance Cres − 90 − pF − 18 − ns − 46 − ns td(off) − 250 − ns SWITCHING CHARACTERISTICS Turn−On Delay Time td(on) Rise Time tr Turn−Off Delay Time Fall Time VCC = 400 V, IC = 30 A, RG = 6.8  VGE = 15 V, Inductive Load, TC = 25°C tf − 1.3 2.0 s Turn−On Switching Loss Eon − 1.1 − mJ Turn−Off Switching Loss Eoff − 21 − mJ − 17 − ns − 45 − ns td(off) − 270 − ns Turn−On Delay Time td(on) Rise Time tr Turn−Off Delay Time Fall Time VCC = 400 V, IC = 30 A, RG = 6.8  VGE = 15 V, Inductive Load, TC = 125°C tf − 2.6 − s Turn−On Switching Loss Eon − 1.1 − mJ Turn−Off Switching Loss Eoff − 36 − mJ Total Gate Charge Qg − 225 − nC Gate to Emitter Charge Qge − 30 − nC Gate to Collector Charge Qgc − 105 − nC − 7 − nH Min Typ Max Unit 2.2 V Internal Emitter Inductance Le VCE = 600 V, IC = 30 A, VGE = 15 V Measured 5 mm from PKG ELECTRICAL CHARACTERISTICS OF THE DIODE (TJ = 25°C unless otherwise noted) Conditions Parameter VFM IF = 15 A TC = 25°C − 1.8 IF = 15 A TC = 125°C − 1.6 − VR = 600 V TC = 25°C − − 100 A IF = 1 A, diF / dt = 100 A/s, VR = 30 V TC = 25°C − − 35 ns IF = 15 A, diF / dt = 100 A/s, VR = 390 V TC = 25°C − − 40 IF = 15 A, diF / dt = 100 A/s, VR = 390 V TC = 25°C − 18 − tb TC = 25°C − 13 − Qrr TC = 25°C − 27.5 − IRM trr ta ns nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 FGH30N60LSD TYPICAL PERFORMANCE CHARACTERISTICS TC = 25°C 60 90 VGE = 20 V 15 V 12 V 10 V 8V Collector Current, IC [A] Collector Current, IC [A] 90 30 0 0 1 2 3 Collector−Emitter Voltage, VCE [V] 60 30 0 4 0 Collector Current, IC [A] Collector Current, IC [A] 90 Common Emitter VGE = 15 V TC = 25°C TC = 125°C 60 30 0 0 1 2 Collector−Emitter Voltage, VCE [V] 60 30 0 3 0 60 A 30 A IC = 15 A 0.8 0.6 25 8 4 6 10 Gate−Emitter Voltage, VGE [V] 20 1.2 1.0 2 100 50 75 Case Temperature, TC [°C] 12 Figure 4. Transfer Characteristics Collector−Emitter Voltage, VCE [V] Collector−Emitter Voltage, VCE [V] Common Emitter VGE = 15 V 4 Common Emitter VCE = 20 V TC = 25°C TC = 125°C Figure 3. Typical Saturation Voltage Characteristics 1.4 2 1 3 Collector−Emitter Voltage, VCE [V] Figure 2. Typical Saturation Voltage Characteristics Figure 1. Typical Output Characteristics 90 VGE = 20 V 15 V 12 V 10 V 8V TC = 125°C 16 12 8 60 A 4 0 125 Common Emitter TC = 25°C 30 A IC = 15 A 0 8 12 4 16 Gate−Emitter Voltage, VGE [V] 20 Figure 6. Saturation Voltage vs VGE Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level www.onsemi.com 4 FGH30N60LSD TYPICAL PERFORMANCE CHARACTERISTICS (continued) 13000 10000 Common Emitter TC = 125°C Cies 16 Capacitance [pF] Collector−Emitter Voltage, VCE [V] 20 12 8 30 A 4 0 60 A Coes 1000 IC =15 A 0 4 Cres 100 8 12 16 50 20 10 15 20 25 5 Collector−Emitter Voltage, VCE [V] 0 Gate−Emitter Voltage, VGE [V] 300 Common Emitter IC = 30 A TC = 25°C 12 VCC = 100 V 9 300 V 200 V 6 3 0 50 IC MAX (Pulsed) 100 Collector Current, IC [A] Gate−Emitter Voltage, VGE [V] 15 100 150 200 Gate Charge, Qg [nC] IC MAX (Continuous) 80 70 DC Operation Single Nonrepetitive Pulse TC = 25°C. Curves must be derated linearly with increase in temperature. 1 100 1000 10 1 Collector−Emitter Voltage, VCE [V] Figure 10. SOA Characteristics 200 VCC = 400 V Load Current: peak of square wave Switching Time [ns] 60 50 40 30 100 tr td(on) 20 10 0 0.1 Duty Cycle: 50% TC = 100°C Power Dissipation = 192 W 1 10 100 Frequency, f [kHz] 100 s 1ms 0.1 0.1 250 50 s 10 Figure 9. Gate Charge Characteristics Collector Current, IC [A] 30 Figure 8. Capacitance Characteristic Figure 7. Saturation Voltage vs. VGE 0 Common Emitter VGE = 0 V, f = 1 MHz TC = 25°C 10 1000 0 10 Common Emitter VCC = 400 V, VGE = 15 V IC = 30 A TC = 25°C TC = 125°C 20 30 40 Gate Resistance, RG [] 50 Figure 12. Turn−On Characteristics vs. Gate Resistance Figure 11. Load Current vs. Frequency www.onsemi.com 5 FGH30N60LSD TYPICAL PERFORMANCE CHARACTERISTICS (continued) 500 1000 tf Common Emitter VCC = 400 V, VGE = 15 V IC = 30 A TC = 25°C TC = 125°C td(off) 100 Switching Time [ns] Switching Time [ns] 3000 30 40 10 20 Gate Resistance, RG [] 0 Common Emitter VGE = 15 V, RG = 6.8  TC = 25°C TC = 125°C tr 100 td(on) 10 50 20 500 6000 Switching Loss [mJ] tf Switching Time [ns] 60 70 40 50 Collector Current, IC [A] 80 Figure 14. Turn−On Characteristics vs. Collector Current Figure 13. Turn−Off Characteristics vs. Gate Resistance Common Emitter VGE = 15 V, RG = 6.8  TC = 25°C TC = 125°C 1000 30 td(off) 100 Common Emitter VCC = 400 V, VGE = 15 V IC = 30 A TC = 25°C TC = 125°C Eoff 10 Eon 100 20 30 40 50 60 70 Collector Current, IC [A] 1 80 5 Figure 15. Turn−Off Characteristics vs. Collector Current 200 100 Collector Current, IC [A] Eoff Switching Loss [mJ] 15 20 25 30 35 40 45 50 Gate Resistance, RG [] Figure 16. Switching Loss vs. Gate Resistance 100 10 Eon 1 0.1 10 10 Common Emitter VGE = 15 V, RG = 6.8  TC = 25°C TC = 125°C 20 40 50 60 70 30 Collector Current, IC [A] 10 Safe Operating Area VGE = 15 V, TC = 125°C 1 80 1 100 1000 10 Collector−Emitter Voltage, VCE [V] Figure 18. Turn−Off Switching SOA Characteristics Figure 17. Switching Loss vs. Collector Current www.onsemi.com 6 FGH30N60LSD TYPICAL PERFORMANCE CHARACTERISTICS (continued) Thermal Response [Zjc] 1 0.1 0.5 0.2 0.1 0.01 0.05 0.02 PDM t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zjc + TC 0.01 1E−3 1E−5 Single Pulse 1E−3 1E−4 0.01 1 0.1 10 Rectangular Pulse Duration [sec] Figure 19. Transient Thermal Impedance of IGBT 1 TC = 125°C TC = 75°C TC = 125°C 1E−5 Reverse Current, IR [A] 10 1E−4 TC = 75°C 1E−6 1E−7 TC = 25°C 1E−8 TC = 25°C 1E−9 0.1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 Forward Voltage, VF [V] 0 200 190 180 170 160 150 140 130 120 110 100 90 80 70 60 50 40 30 20 10 0 100 100 200 300 400 Reverse Voltage, VR [V] 500 Figure 21. Reverse Current Figure 20. Forward Characteristics Reverse Recovery Time, trr [ns] Forward Current, IF [A] 100 IF = 15 A TC = 125°C TC = 75°C TC = 25°C 200 300 diF/dt [A/s] 400 Figure 22. Reverse Recovery Time www.onsemi.com 7 500 600 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−3LD SHORT LEAD CASE 340CK ISSUE A A DATE 31 JAN 2019 A E P1 P A2 D2 Q E2 S B D 1 2 D1 E1 2 3 L1 A1 L b4 c (3X) b 0.25 M (2X) b2 B A M DIM (2X) e GENERIC MARKING DIAGRAM* AYWWZZ XXXXXXX XXXXXXX XXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week ZZ = Assembly Lot Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13851G TO−247−3LD SHORT LEAD A A1 A2 b b2 b4 c D D1 D2 E E1 E2 e L L1 P P1 Q S MILLIMETERS MIN NOM MAX 4.58 4.70 4.82 2.20 2.40 2.60 1.40 1.50 1.60 1.17 1.26 1.35 1.53 1.65 1.77 2.42 2.54 2.66 0.51 0.61 0.71 20.32 20.57 20.82 13.08 ~ ~ 0.51 0.93 1.35 15.37 15.62 15.87 12.81 ~ ~ 4.96 5.08 5.20 ~ 5.56 ~ 15.75 16.00 16.25 3.69 3.81 3.93 3.51 3.58 3.65 6.60 6.80 7.00 5.34 5.46 5.58 5.34 5.46 5.58 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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