FGA50N100BNT

FGA50N100BNT 1000V, 50A NPT-Trench IGBT CO-PAK March 2009 FGA50N100BNT 1000V, 50A NPT-Trench IGBT CO-PAK Features • • • • High Speed Switching Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60A High Input Impedance RoHS Compliant tm General Description Trench insulated gate bipolar transistors (IGBTs) with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness. These devices are well suited for UPS, PFC, I-H Jar, induction Heater and Home Appliance. Applications • UPS, PFC, I-H Jar, Induction Heater, Home Appliance. TO-3P GCE Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) PD TJ Tstg TL Description Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Collector Current Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds @ TC = 25oC @ TC = 100 C o Ratings 1000 ± 25 @ TC = 25oC @ TC = 100oC 50 35 200 156 63 -55 to +150 -55 to +150 300 Units V V A A A W W o o o C C C Notes: 1: Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol RθJC(IGBT) RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Typ. - Max. 0.8 40.0 Units o o C /W C /W ©2009 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FGA50N100BNT Rev. A FGA50N100BNT 1000V, 50A NPT-Trench IGBT CO-PAK Package Marking and Ordering Information Device Marking FGA50N100BNT Device FGA50N100BNTTU Package TO-3PN Packaging Type Rail / Tube Max Qty Qty per Tube 30ea per Box - Electrical Characteristics of the IGBT Symbol Off Characteristics BVCES ICES IGES TC = 25°C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units Collector to Emitter Breakdown Voltage VGE = 0V, IC = 1mA Collector Cut-Off Current G-E Leakage Current VCE = 1000V, VGE = 0V VGE = ±25V, VCE = 0V 1000 - - 1.0 ±500 V mA nA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 60mA, VCE = VGE IC = 10A, VGE = 15V IC = 60A, VGE = 15V IC = 60A, VGE = 15V, TC = 125oC Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 10V, VGE = 0V, f = 1MHz 6000 260 200 pF pF pF 4.0 5.5 1.5 2.5 3.1 7.0 1.8 2.9 V V V V Switching Characteristics td(on) tr td(off) tf Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Emitter Charge Gate to Collector Charge VCE = 600V, IC = 60A, VGE = 15V, TC = 25oC VCC = 600V, IC = 60A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 25oC 34 68 243 65 257 45 95 100 350 ns ns ns ns nC nC nC FGA50N100BNT Rev. A 2 www.fairchildsemi.com FGA50N100BNT 1000V, 50A NPT-Trench IGBT CO-PAK Typical Performance Characteristics Figure 1. Typical Output Characteristics 200 TC = 25 C o Figure 2. Typical Output Characteristics 200 TC = 125 C o 20V 15V 10V 20V 15V 10V 9V Collector Current, IC [A] 9V 120 Collector Current, IC [A] 160 160 120 8V 80 8V 80 7V 40 7V VGE = 6V 40 VGE = 6V 0 0 2 4 6 8 Collector-Emitter Voltage, VCE [V] 10 0 0 2 4 6 8 Collector-Emitter Voltage, VCE [V] 10 Figure 3. Typical Saturation Voltage Characteristics 200 Common Emitter VGE = 15V Figure 4. Transfer Characteristics 200 Common Emitter VCE = 20V Collector Current, IC [A] TC = 25 C TC = 125 C o Collector Current, IC [A] 160 o o 160 TC = 25 C TC = 125 C o 120 120 80 80 40 40 0 0 1 2 3 4 5 6 Collector-Emitter Voltage, VCE [V] 7 0 2 4 6 8 10 Gate-Emitter Voltage,VGE [V] 12 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 4.5 Collector-Emitter Voltage, VCE [V] Common Emitter VGE = 15V 90A Figure 6. Saturation Voltage vs. VGE 20 Collector-Emitter Voltage, VCE [V] Common Emitter TC = -40 C o 16 60A 3.0 30A 12 60A 8 30A 90A IC = 10A IC = 10A 4 1.5 1.0 25 50 75 100 125 o Collector-EmitterCase Temperature, TC [ C] 0 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 FGA50N100BNT Rev. A 3 www.fairchildsemi.com FGA50N100BNT 1000V, 50A NPT-Trench IGBT CO-PAK Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE 20 Collector-Emitter Voltage, VCE [V] Common Emitter o Figure 8. Saturation Voltage vs. VGE 20 Common Emitter o Collector-Emitter Voltage, VCE [V] TC = 25 C TC = 125 C 16 16 12 60A 12 60A 8 30A 90A 8 30A 90A 4 IC = 10A 4 0 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 0 0 IC = 10A 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 Figure 9. Capacitance Characteristics 8000 Figure 10. Gate charge Characteristics 15 Common Emitter o Gate-Emitter Voltage, VGE [V] TC = 25 C 12 VCC = 200V 6000 Capacitance [pF] Cies Common Emitter VGE = 0V, f = 1MHz 9 400V 600V 4000 TC = 25 C o 6 2000 Coes Cres 3 0 1 10 Collector-Emitter Voltage, VCE [V] 30 0 0 55 110 165 220 Gate Charge, Qg [nC] 275 Figure 11. SOA Characteristics 500 Figure 12. Load Current vs. Frequency 120 VCC = 600V load Current : peak of square wave Load Current [A] 100 Collector Current, Ic [A] 10µs 100 80 60 40 10 100µs 1ms 1 *Notes: 10 ms DC o o 0.1 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse 20 Duty cycle : 50% o T = 100 C C 0.01 1 10 100 1000 3000 Collector-Emitter Voltage, VCE [V] 0 0 10 Power Dissipation = 63W 10 10 Frequency [kHz] 1 2 10 3 FGA50N100BNT Rev. A 4 www.fairchildsemi.com FGA50N100BNT 1000V, 50A NPT-Trench IGBT CO-PAK Typical Performance Characteristics Figure 13. Turn-on Characteristics vs. Gate Resistance 300 Figure 14. Turn-off Characteristics vs. Gate Resistance 2000 1000 td(off) Switching Time [ns] 100 tr Switching Time [ns] 100 td(on) tf Common Emitter VCC = 600V, VGE = 15V IC = 60A TC = 25 C o o Common Emitter VCC = 600V, VGE = 15V IC = 60A TC = 25 C TC = 125 C o o 10 10 20 30 40 Gate Resistance, RG [Ω] 50 10 10 TC = 125 C 20 30 40 50 Gate Resistance, RG [Ω] Figure 15. Turn-on Characteristics vs. Collector Current 200 Figure 16. Turn-off Characteristics vs. Collector Current 1000 100 Switching Time [ns] Switching Time [ns] tr td(off) Common Emitter VGE = 15V, RG = 10Ω td(on) 100 TC = 25 C TC = 125 C o o tf Common Emitter VGE = 15V, RG = 10Ω TC = 25 C TC = 125 C o o 10 10 20 30 40 50 60 70 80 90 100 10 10 20 30 40 50 60 70 80 90 100 Collector Current, IC [A] Collector Current, IC [A] Figure 17. Switching Loss vs. Gate Resistance 50 Common Emitter VCC = 600V, VGE = 15V IC = 60A Fig 18. Switching Loss vs. Collector Current 30 10 Switching Loss [mJ] Eon o Switching Loss [mJ] TC = 25 C o 10 TC = 125 C Eon 1 Eoff Eoff Common Emitter VCC = 600V, VGE = 15V IC = 60A TC = 25 C TC = 125 C o o 1 10 20 30 40 Gate Resistance, RG [Ω] 50 0.1 10 20 30 40 50 60 70 80 90 100 Collector Current, IC [A] FGA50N100BNT Rev. A 5 www.fairchildsemi.com FGA50N100BNT 1000V, 50A NPT-Trench IGBT CO-PAK Typical Performance Characteristics Figure 19. Turn off Switching SOA Characterisics 250 100 Collector Current, IC [A] 10 Safe Operating Area VGE = 15V, TC = 125 C o 1 1 10 100 1000 3000 Collector-Emitter Voltage, VCE [V] Figure 20.Transient Thermal Impedance of IGBT 1 Thermal Response [Zthjc] 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 single pulse Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 1E-3 1E-5 1E-4 1E-3 0.01 0.1 1 10 Rectangular Pulse Duration [sec] FGA50N100BNT Rev. A 6 www.fairchildsemi.com FGA50N100BNT 1000V, 50A NPT-Trench IGBT CO-PAK Mechanical Dimensions TO-3PN FGA50N100BNT Rev. 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