Is Now Part of
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FGA50N100BNTD2
1000 V NPT Trench IGBT
Features
General Description
•
•
•
•
•
Using Fairchild's proprietary trench design and advanced NPT
technology, the 1000V NPT IGBT offers superior conduction
and switching performances, high avalanche ruggedness and
easy parallel operation. This device offers the optimum performance for hard switching application such as UPS, welder
applications.
High Speed Switching
Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60 A
High Input Impedance
Built-in Fast Recovery Diode
RoHS Compliant
Applications
• UPS, Welder
C
G
TO-3P
G C E
E
Absolute Maximum Ratings
Symbol
Description
VCES
Collector to Emitter Voltage
VGES
Gate to Emitter Voltage
IC
ICM (1)
IF
IFM
PD
Collector Current
@ TC = 25oC
Collector Current
o
@ TC = 100 C
Pulsed Collector Current
Unit
1000
V
± 25
V
50
A
35
A
200
A
Diode Continuous Forward Current
@ TC = 25oC
30
A
Diode Continuous Forward Current
@ TC = 100oC
15
A
150
A
156
W
Diode Maximum Forward Current
Maximum Power Dissipation
@ TC = 25oC
Maximum Power Dissipation
o
@ TC = 100 C
63
Operating Junction Temperature
TJ
Ratings
Tstg
Storage Temperature Range
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
W
-55 to +150
o
C
-55 to +150
o
C
300
o
C
Notes:
1: Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
Unit
RJC(IGBT)
Thermal Resistance, Junction to Case
-
0.8
o
C/W
RJC(DIODE)
Thermal Resistance, Junction to Case
-
1.2
o
C/W
RJA
Thermal Resistance, Junction to Ambient
©2009 Fairchild Semiconductor Corporation
FGA50N100BNTD2 Rev. C1
-
1
40.0
oC/W
www.fairchildsemi.com
FGA50N100BNTD2 — 1000 V NPT Trench IGBT
November 2013
Part Number
Top Mark
Package Packing Method
FGA50N100BNTD2 FGA50N100BNTD2
TO-3P
Tube
Electrical Characteristics of the IGBT
Symbol
Parameter
Reel Size
Tape Width Quantity
N/A
N/A
30
TC = 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BVCES
Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 1 mA
1000
-
-
V
ICES
Collector Cut-Off Current
VCE = 1000 V, VGE = 0 V
-
-
1.0
mA
IGES
G-E Leakage Current
VGE = ±25 V, VCE = 0 V
-
-
±500
nA
4.0
5.5
7.0
V
-
1.5
1.8
V
2.5
2.9
V
-
V
On Characteristics
VGE(th)
G-E Threshold Voltage
IC = 60 mA, VCE = VGE
VCE(sat)
Collector to Emitter Saturation Voltage
IC = 60 A, VGE = 15 V
IC = 10 A, VGE = 15 V
IC = 60 A, VGE = 15 V,
TC = 125oC
-
3.3
-
6000
-
pF
VCE = 10 V, VGE = 0 V,
f = 1 MHz
-
260
-
pF
-
200
-
pF
-
34
-
ns
Dynamic Characteristics
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qge
Gate to Emitter Charge
Qgc
Gate to Collector Charge
VCC = 600 V, IC = 60 A,
RG = 10 , VGE = 15 V,
Inductive Load, TC = 25oC
-
68
-
ns
-
243
-
ns
-
65
100
ns
-
257
350
nC
-
45
-
nC
-
95
-
nC
IF = 15 A
-
2.9
3.2
V
IF = 60 A
-
4.0
4.7
V
VCE = 600 V, IC = 60 A,
VGE = 15 V, TC = 25oC
Electrical Characteristics of the Diode
TC = 25°C unless otherwise noted
VFM
Diode Forward Voltage
trr
Diode Reverse Recovery Time
IF = 60 A, diF/dt = 100 A/us
-
60
75
ns
IR
Instantaneous Reverse Current
VRRM = 1000 V
-
-
2
A
©2009 Fairchild Semiconductor Corporation
FGA50N100BNTD2 Rev. C1
2
www.fairchildsemi.com
FGA50N100BNTD2 — 1000 V NPT Trench IGBT
Package Marking and Ordering Information
Figure 1. Typical Output Characteristics
200
200
o
o
20V
TC = 25 C
15V
TC = 125 C
20V
10V
15V
10V
160
Collector Current, IC [A]
Collector Current, IC [A]
Figure 2. Typical Output Characteristics
9V
120
80
8V
40
160
9V
120
8V
80
7V
40
7V
VGE = 6V
VGE = 6V
0
0
2
4
6
8
Collector-Emitter Voltage, VCE [V]
0
10
0
Figure 3. Typical Saturation Voltage
Characteristics
200
Common Emitter
VCE = 20V
Common Emitter
VGE = 15V
o
160
Collector Current, IC [A]
Collector Current, IC [A]
10
Figure 4. Transfer Characteristics
200
TC = 25 C
o
TC = 125 C
120
80
o
160 TC = 25 C
o
TC = 125 C
120
80
40
40
0
0
0
1
2
3
4
5
6
Collector-Emitter Voltage, VCE [V]
2
7
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
20
Collector-Emitter Voltage, VCE [V]
Common Emitter
VGE = 15V
90A
60A
3.0
30A
IC = 10A
1.5
1.0
25
4
6
8
10
Gate-Emitter Voltage,VGE [V]
12
Figure 6. Saturation Voltage vs. VGE
4.5
Collector-Emitter Voltage, VCE [V]
2
4
6
8
Collector-Emitter Voltage, VCE [V]
Common Emitter
o
TC = -40 C
16
12
60A
8
30A
4
90A
IC = 10A
50
75
100
o
Case Temperature, TC [ C]
©2009 Fairchild Semiconductor Corporation
FGA50N100BNTD2 Rev. C1
0
125
3
0
4
8
12
16
Gate-Emitter Voltage, VGE [V]
20
www.fairchildsemi.com
FGA50N100BNTD2 — 1000 V NPT Trench IGBT
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
20
20
Common Emitter
Common Emitter
o
o
TC = 25 C
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
Figure 8. Saturation Voltage vs. VGE
16
12
60A
8
30A
90A
4
IC = 10A
0
0
4
8
12
16
Gate-Emitter Voltage, VGE [V]
TC = 125 C
16
12
60A
8
IC = 10A
0
20
0
Figure 9. Capacitance Characteristics
90A
30A
4
4
8
12
16
Gate-Emitter Voltage, VGE [V]
20
Figure 10. Gate charge Characteristics
15
8000
Common Emitter
Capacitance [pF]
6000
Gate-Emitter Voltage, VGE [V]
o
Cies
Common Emitter
VGE = 0V, f = 1MHz
o
4000
TC = 25 C
2000
Coes
TC = 25 C
12
VCC = 200V
9
400V
600V
6
3
Cres
0
0
1
10
Collector-Emitter Voltage, VCE [V]
0
30
Figure 11. SOA Characteristics
55
110
165
220
Gate Charge, Qg [nC]
275
Figure 12. Load Current vs. Frequency
500
Collector Current, Ic [A]
100
10s
10
100s
1ms
1
10 ms
DC
*Notes:
0.1
o
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
0.01
1
10
100
1000 3000
Collector-Emitter Voltage, VCE [V]
©2009 Fairchild Semiconductor Corporation
FGA50N100BNTD2 Rev. C1
4
www.fairchildsemi.com
FGA50N100BNTD2 — 1000 V NPT Trench IGBT
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs.
Gate Resistance
Figure 14. Turn-off Characteristics vs.
Gate Resistance
300
2000
1000
100
Switching Time [ns]
Switching Time [ns]
td(off)
tr
td(on)
Common Emitter
VCC = 600V, VGE = 15V
IC = 60A
100
tf
Common Emitter
VCC = 600V, VGE = 15V
IC = 60A
o
TC = 25 C
o
TC = 25 C
o
TC = 125 C
10
10
o
20
30
40
Gate Resistance, RG []
TC = 125 C
10
10
50
20
30
40
50
Gate Resistance, RG []
Figure 15. Turn-on Characteristics vs.
Collector Current
Figure 16. Turn-off Characteristics vs.
Collector Current
200
1000
100
td(off)
Switching Time [ns]
Switching Time [ns]
tr
td(on)
Common Emitter
VGE = 15V, RG = 10
Common Emitter
VGE = 15V, RG = 10
100
o
TC = 25 C
tf
o
TC = 125 C
o
TC = 25 C
o
TC = 125 C
10
10
20
30
40
50
60
70
80
90
10
10
100
20
30
Collector Current, IC [A]
40
50
60
70
80
90
100
Collector Current, IC [A]
Figure 17. Switching Loss vs. Gate Resistance
Fig 18. Switching Loss vs. Collector Current
30
50
Common Emitter
VCC = 600V, VGE = 15V
10
Switching Loss [mJ]
IC = 60A
Switching Loss [mJ]
o
TC = 25 C
o
10
TC = 125 C
Eon
Eoff
Eon
Eoff
1
Common Emitter
VCC = 600V, VGE = 15V
IC = 60A
o
TC = 25 C
o
TC = 125 C
1
10
20
30
40
Gate Resistance, RG []
©2009 Fairchild Semiconductor Corporation
FGA50N100BNTD2 Rev. C1
0.1
10
50
20
30
40
50
60
70
80
90
100
Collector Current, IC [A]
5
www.fairchildsemi.com
FGA50N100BNTD2 — 1000 V NPT Trench IGBT
Typical Performance Characteristics
Figure 19. Turn off Switching SOA Characterisics
Figure 20. Forward Characteristics
200
250
100
100
Forward Current, IF [A]
Collector Current, IC [A]
o
TJ = 125 C
10
10
o
TJ = 25 C
1
o
Safe Operating Area
TC = 25 C
o
VGE = 15V, TC = 125 C
o
TC = 125 C
1
1
10
0.1
1000 3000
100
0
1
Collector-Emitter Voltage, VCE [V]
Figure 21. Reverse Current
2
3
4
Forward Voltage, VF [V]
5
6
Figure 22. Reverse Recovery Characteristics vs.
diF/dt
300
10
80
Reverse Recovery Time, Trr[ns]
o
TJ = 125 C
10
1
0.1
0.01
o
TJ = 25 C
1E-3
50
200
400
600
800
Reverse Voltage, VR [V]
Trr
Irr
6
40
4
20
2
IF = 60A
o
0
20
1000
8
60
TC = 25 C
40
60
Reverse Recovery Current, Irr[A]
Reverse Current , IR [A]
100
0
80 100 120 140 160 180 200
diF/dt[A/s]
Figure 23. Reverse Recovery Characteristics vs.
Forward Current
6
Trr
Irr
70
4
diF/dt = 100A/s
o
60
10
TC = 25 C
20
30
40
50
Forward Current,IF[A]
©2009 Fairchild Semiconductor Corporation
FGA50N100BNTD2 Rev. C1
Reverse Recovery Current, Irr[A]
Reverse Recovery Time, Trr [ns]
80
2
60
6
www.fairchildsemi.com
FGA50N100BNTD2 — 1000 V NPT Trench IGBT
Typical Performance Characteristics
FGA50N100BNTD2 — 1000 V NPT Trench IGBT
Typical Performance Characteristics
Figure 24.Transient Thermal Impedance of IGBT
Thermal Response [Zthjc]
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
t1
single pulse
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
1E-3
1E-5
1E-4
1E-3
0.01
0.1
1
10
Rectangular Pulse Duration [sec]
©2009 Fairchild Semiconductor Corporation
FGA50N100BNTD2 Rev. C1
7
www.fairchildsemi.com
FGA50N100BNTD2 — 1000 V NPT Trench IGBT
Mechanical Dimensions
Figure 25. TO-3P 3L - 3LD, T03, PLASTIC, EIAJ SC-65
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT3P0-003
©2009 Fairchild Semiconductor Corporation
FGA50N100BNTD2 Rev. C1
8
www.fairchildsemi.com
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
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As used here in:
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and (c) whose failure to perform when properly used in accordance with
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2.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I66
©2009 Fairchild Semiconductor Corporation
FGA50N100BNTD2 Rev. C1
9
www.fairchildsemi.com
FGA50N100BNTD2 — 1000 V NPT Trench IGBT
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The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
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Marking Small Speakers Sound Louder
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