FGA50S110P

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FGA50S110P 1100 V, 50 A Shorted-anode IGBT tm Features General Description • Intrinsic Anti-parallel Diode for Soft-switching Applications Using advanced field stop trench and shorted-anode technology, Fairchild’s shorted-anode trench IGBTs offer superior conduction and switching performances for switching applications. This device is tailored to induction cooker and microwave oven. • High Switching Frequency Range 10 kHz to 50kHz • High Temperature Stable Behavior (Tjmax = 175oC) • Low Saturation Voltage Drop : VCE(sat) = 2.06 V @ IC = 50 A • Robust Pot Detection Noise Immunity • RoHS Compliant (Pb-free lead plating) Applications • Induction Cooker, Rice-jar, and Microwave Oven • Soft-switching Applications C G TO-3PN E G CE Absolute Maximum Ratings Symbol Description VCES Collector to Emitter Voltage VGES Gate to Emitter Voltage IC ICM (1) IF PD Collector Current @ TC = 25oC Collector Current @ TC = 100oC Pulsed Collector Current o Ratings Unit 1100 V ± 25 V 50 A 30 A 120 A Diode Continuous Forward Current @ TC = 25 C 50 A Diode Continuous Forward Current @ TC = 100oC 30 A W o Maximum Power Dissipation @ TC = 25 C 300 Maximum Power Dissipation @ TC = 100oC 150 W TJ Operating Junction Temperature -55 to +175 o Tstg Storage Temperature Range -55 to +175 o C TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds 300 o C C Thermal Characteristics Symbol RθJC(IGBT) RθJA Parameter Thermal Resistance, Junction to Case, Max Thermal Resistance, Junction to Ambient, Max Typ. Max. - 0.5 o C/W 40 o C/W - Unit Notes: 1: Limited by Tjmax ©2013 Fairchild Semiconductor Corporation FGA50S110P Rev. 1.3 1 www.fairchildsemi.com FGA50S110P — 1100 V, 50 A Shorted-anode IGBT March 2016 Device Marking Device Package Reel Size Tape Width Quantity FGA50S110P FGA50S110P TO-3PN - - 30 Electrical Characteristics of the IGBT Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Unit Off Characteristics ICES Collector Cut-Off Current VCE = 1100 V, VGE = 0 V - - 1 mA IGES G-E Leakage Current VGE = VGES, VCE = 0 V - - ±500 nA IC = 50 mA, VCE = VGE On Characteristics VGE(th) VCE(sat) VFM G-E Threshold Voltage Collector to Emitter Saturation Voltage Diode Forward Voltage 4.5 5.6 7.5 V IC = 50 A, VGE = 15 V TC = 25oC - 2.06 2.6 V IC = 50 A , VGE = 15 V TC = 125oC - 2.54 - V IC = 50 A, VGE = 15 V, TC = 175oC - 2.7 - V IF = 50 A, TC = 25oC - 1.96 2.6 V - 2.67 - V IF = 50 A, TC = 175oC Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VCE = 30 V, VGE = 0 V, f = 1 MHz - 2056 - pF - 47.8 - pF - 35.8 - pF Switching Characteristics td(on) Turn-On Delay Time - 24 - ns tr Rise Time - 294 - ns td(off) Turn-Off Delay Time - 280 - ns tf Fall Time - 95 - ns Eon Turn-On Switching Loss - 2240 - uJ Eoff Turn-Off Switching Loss - 990 - uJ Ets Total Switching Loss - 3230 - uJ VCC = 600 V, IC = 50 A, RG = 10 Ω, VGE = 15 V, Resistive Load, TC = 25oC td(on) Turn-On Delay Time - 24 - ns tr Rise Time - 346 - ns td(off) Turn-Off Delay Time - 308 - ns tf Fall Time - 184 - ns Eon Turn-On Switching Loss - 2640 - uJ Eoff Turn-Off Switching Loss - 1820 - uJ VCC = 600 V, IC = 50 A, RG = 10 Ω, VGE = 15 V, Resistive Load,, TC = 175oC Ets Total Switching Loss - 4460 - uJ Qg Total Gate Charge - 195 - nC Qge Gate to Emitter Charge - 15.4 - nC Qgc Gate to Collector Charge - 99.9 - nC ©2013 Fairchild Semiconductor Corporation FGA50S110P Rev. 1.3 VCE = 600 V, IC = 50 A, VGE = 15 V 2 www.fairchildsemi.com FGA50S110P — 1100 V, 50 A Shorted-anode IGBT Package Marking and Ordering Information Figure 1. Typical Output Characteristics o Collector Current, IC [A] 100 120 17V 15V TC = 25 C 20V o TC = 175 C 20V 17V 15V 12V 10V 80 60 9V 40 8V 80 10V 60 9V 40 8V 20 20 VGE = 7V VGE = 7V 0 0.0 2.0 4.0 6.0 8.0 Collector-Emitter Voltage, VCE [V] 0 0.0 10.0 Figure 3. Typical Saturation Voltage Characteristics Collector Current, IC [A] Collector Current, IC [A] TC = 175 C 60 40 0 0.0 60 40 3.0 2.5 50 A 2.0 IC = 25 A 50 75 100 125 150 o Case Temperature, TC [ C] ©2013 Fairchild Semiconductor Corporation FGA50S110P Rev. 1.3 3 6 9 12 Gate-Emitter Voltage,VGE [V] 20 100 A 1.5 0 15 Figure 6. Saturation Voltage vs. VGE Common Emitter VGE = 15 V 3.5 1.0 25 o TC = 175 C 80 0 1.0 2.0 3.0 4.0 5.0 Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] 4.0 o TC = 25 C 20 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 4.5 Common Emitter VCE = 20V 100 o TC = 25 C 20 Collector-Emitter Voltage, VCE [V] 10.0 120 Common Emitter VGE = 15V o 80 2.0 4.0 6.0 8.0 Collector-Emitter Voltage, VCE [V] Figure 4. Transfer Characteristics 120 100 12V 100 Collector Current, IC [A] 120 Figure 2. Typical Output Characteristics o TC = 25 C 15 50A 10 3 IC = 25A 100A 5 0 175 Common Emitter 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGA50S110P — 1100 V, 50 A Shorted-anode IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE Figure 8. Capacitance Characteristics 5000 20 Common Emitter Cies 1000 15 Capacitance [pF] Collector-Emitter Voltage, VCE [V] o TC = 175 C 50A 10 IC = 25A 100A 100 Coes 5 Common Emitter VGE = 0V, f = 1MHz Cres o TC = 25 C 0 10 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 Figure 9. Gate charge Characteristics 1 5 10 15 20 25 Collector-Emitter Voltage, VCE [V] 30 Figure 10. SOA Characteristics 150 100 15 Common Emitter VCC = 200V 10μs 600V Collector Current, Ic [A] Gate-Emitter Voltage, VGE [V] o TC = 25 C 12 400V 9 6 3 10 100μs 10ms 1ms DC 1 *Notes: o 1. TC = 25 C o 0 0 30 60 90 120 150 Gate Charge, Qg [nC] 180 0.1 210 Figure 11. Turn-on Characteristics vs. Gate Resistance 2. TJ = 175 C 3. Single Pulse 1 10 100 Collector-Emitter Voltage, VCE [V] 1000 Figure 12. Turn-off Characteristics vs. Gate Resistance 1000 5000 td(on) Switching Time [ns] Switching Time [ns] 1000 100 tr Common Emitter VCC = 600V, VGE = 15V IC = 50A 100 o TC = 175 C ©2013 Fairchild Semiconductor Corporation FGA50S110P Rev. 1.3 10 o 20 30 40 Gate Resistance, RG [Ω] tf Common Emitter VCC = 600V, VGE = 15V IC = 50A o TC = 25 C 10 7 10 td(off) 50 5 10 60 4 TC = 25 C o TC = 175 C 20 30 40 Gate Resistance, RG [Ω] 50 60 www.fairchildsemi.com FGA50S110P — 1100 V, 50 A Shorted-anode IGBT Typical Performance Characteristics Figure 13. Turn-on Characteristics vs. Collector Current Figure 14. Turn-off Characteristics vs. Collector Current 1000 1000 100 Switching Time [ns] Switching Time [ns] td(off) tr td(on) 10 Common Emitter VGE = 15V, RG = 10Ω tf 100 Common Emitter VGE = 15V, RG = 10Ω o o TC = 25 C TC = 25 C o o TC = 175 C 1 10 20 30 TC = 175 C 40 10 10 50 Collector Current, IC [A] Figure 15. Switching Loss vs. Gate Resistance 50 Figure 16. Switching Loss vs. Collector Current 5000 10000 Eon Eon Switching Loss [uJ] Switching Loss [uJ] 20 30 40 Collector Current, IC [A] 1000 Eoff 1000 Common Emitter VCC = 600V, VGE = 15V IC = 50A Eoff o TC = 25 C o TC = 25 C o TC = 175 C o TC = 175 C 100 10 20 30 40 50 Gate Resistance, RG [Ω] Common Emitter VGE = 15V, RG = 10Ω 100 10 60 Figure 17. Turn off Switching SOA Characteristics 20 30 40 Collector Current, IC [A] 50 Figure 18. Forward Characteristics 200 100 Forward Current, IF [A] Collector Current, IC [A] 100 10 Safe Operating Area 10 1 o TC = 25 C o VGE = 15V, TC = 175 C 1 1 10 100 Collector-Emitter Voltage, VCE [V] ©2013 Fairchild Semiconductor Corporation FGA50S110P Rev. 1.3 o TC = 175 C 0.1 1000 5 0 1 2 3 Forward Voltage, VF [V] 4 www.fairchildsemi.com FGA50S110P — 1100 V, 50 A Shorted-anode IGBT Typical Performance Characteristics FGA50S110P — 1100 V, 50 A Shorted-anode IGBT Typical Performance Characteristics Figure 19. Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 0.6 0.5 0.2 PDM 0.1 0.1 0.05 0.02 0.01 t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC single pulse 0.05 1E-5 1E-4 1E-3 0.01 0.1 1 10 100 Rectangular Pulse Duration [sec] ©2013 Fairchild Semiconductor Corporation FGA50S110P Rev. 1.3 6 www.fairchildsemi.com 5.00 4.60 1.65 1.45 16.20 15.40 5.20 4.80 13.80 13.40 3.30 3.10 R0.50 3° 20.10 19.70 16.96 16.56 18.90 18.50 3° 1 3 3.70 3.30 1.85 2.20 1.80 3.20 2.80 2.00 1.60 4° 2.60 2.20 20.30 19.70 1.20 0.80 0.55 M 5.45 R0.50 0.75 0.55 5.45 NOTES: UNLESS OTHERWISE SPECIFIED A) THIS PACKAGE CONFORMS TO EIAJ SC-65 PACKAGING STANDARD. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSION AND TOLERANCING PER ASME14.5-2009. D) DIMENSIONS ARE EXCLUSSIVE OF BURRS, MOLD FLASH, AND TIE BAR EXTRUSSIONS. E) DRAWING FILE NAME: TO3PN03AREV2. F) FAIRCHILD SEMICONDUCTOR. 7.20 6.80 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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