FJD3305H1

FJD3305H1 — NPN Silicon Transistor April 2009 FJD3305H1 NPN Silicon Transistor High Voltage Switch Mode Application • Fast Speed Switching • Wide Safe Operating Area • Suitable for Electronic Ballast Application 1 DPAK 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings * Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG TC=25°C unless otherwise noted Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation, Ta = 25°C Tc = 25°C Junction Temperature Storage Temperature Value 700 400 9 4 8 2 1.1 50 150 -65 ~ 150 Units V V V A A A W W °C °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics T =25°C unless otherwise noted a Symbol RθJA RθJC Parameter Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Value 110 2.0 Units °C/W °C/W * Device mounted on minimum pad size Ordering Information Part Number FJD3305H1TM Marking J3305H1 Package D-PAK Packing Method Tape & Reel Remarks © 2009 Fairchild Semiconductor Corporation FJD3305H1 Rev.A 1 www.fairchildsemi.com FJD3305H1 — NPN Silicon Transistor Electrical Characteristics * TC=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE(sat) Parameter Collector-Base Breakdwon Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain * Collector-Emitter Saturation Voltage Conditions IC = 500µA, IE = 0 IC = 5mA, IB = 0 IE = 500µA, IC = 0 VCB = 700V, IE = 0 VEB = 9V, IC = 0 VCE = 5V, IC = 1A VCE = 5V, IC = 2A IC = 1A, IB = 0.2A IC = 2A, IB = 0.5A IC = 4A, IB = 1A IC = 1A, IB = 0.2A IC = 2A, IB = 0.5A VCE = 10V, IC = 0.5A VCB = 10V, f = 1MHz VCC = 125V, IC = 2A IB1 = -IB2 = 0.4A RL = 62.5Ω Min. 700 400 9 Typ. Max Units V V V µA µA 1 1 19 8 28 40 0.5 0.6 1.0 1.2 1.6 4 65 0.8 4.0 0.9 V V V V V MHz pF µs µs µs VBE(sat) fT Cob tON tSTG tF Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Turn On Time Storage Time Fall Time * Pulse Test: Pulse Width≤300µs, Duty Cycle≤2% © 2009 Fairchild Semiconductor Corporation FJD3305H1 Rev. A 2 www.fairchildsemi.com FJD3305H1 — NPN Silicon Transistor Typical Performance Characteristics Figure 1. Static Characteristic 4.5 4.0 100 Figure 2. DC Current Gain VCE = 5V IC [A], COLLECTOR CURRENT 3.5 3.0 2.5 2.0 1.5 IB = 300mA IB = 200mA IB = 150mA IB = 100mA IB = 50mA Ta = 75 C O Ta = 125 C O hFE, DC CURRENT GAIN IB = 250mA 10 Ta = - 25 C O Ta = 25 C O 1.0 0.5 0.0 0 1 2 3 4 5 6 7 8 9 10 1 0.01 0.1 1 10 VCE [V], COLLECTOR-EMITTER VOLTAGE IC [A], COLLECTOR CUTRRENT Figure 3. Collector- Emitter Saturation Voltage 10 Figure 4. Base - EmitterSaturation Voltage 10 VCE(sat) [V], SATURATION VOLTAGE Ta = 125 C 1 O O VBE(sat) [V], SATURATION VOLTAGE IC = 4 IB IC = 4 IB Ta = - 25 C Ta = 25 C 1 O O Ta = 75 C O Ta = - 25 C 0.1 Ta = 25 C O Ta = 125 C O Ta = 75 C O 0.01 0.01 0.1 1 10 0.1 0.01 0.1 1 10 IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT Figure 5. Switching Time 1 0 0 00 Figure 6. Capacitance F = 1M H z tSTG tF & tSTG [µs], SWITCHING TIME C ib Ta = 25 C 1000 tF Ta = 125 C O CAPACITANCE[pF] O 1 0 00 1 00 C ob 10 100 IB1 = - IB2 = 0.4A VCC = 125V 1 1 1 10 100 IC [A], COLLECTOR CURRENT R E VER SE VO LT AG E[V] © 2009 Fairchild Semiconductor Corporation FJD3305H1 Rev. A 3 www.fairchildsemi.com FJD3305H1 — NPN Silicon Transistor Figure 7. Reverse Biased Safe Operating Area Figure 8. RBSOA Collector- Emitter Saturation Voltage 10 10 VBE(OFF)=-9V VBE(OFF)=-7V VCE(sat) [V], SATURATION VOLTAGE IC [A], COLLECTOR CURRENT 8 VBE(OFF)=-5V VBE(OFF)=-3V 6 8 VCC=50V, LC=1mH VBE(OFF)=-5V, IB2=-1.0A RBB=0.7 Ohms Ic/Ib = 5 6 Ic/Ib = 4 4 4 Ic/Ib = 3 2 VCC=50V, LC=1mH IC/IB=5, IB2=-1.0A RBB=0.7 Ohms 2 0 0 100 200 300 400 500 600 700 800 0 1 2 3 4 5 6 7 8 VCE [V], COLLECTOR-EMITTER VOLTAGE IC [A], COLLECTOR CURRENT Figure 9. RBSOA Turn-on Pulse Width vs Collector Current Ic/Ib = 5 200 60 Figure 10. Power Derating Ic/Ib = 4 160 PC[W], POWER DISSIPATION Turn-on PW [uS] VCC=50V, LC=1mH VBE(OFF)=-5V, IB2=-1.0A RBB=0.7 Ohms 50 Ic/Ib = 3 40 120 30 80 20 40 10 0 1 2 3 4 5 6 7 8 0 0 25 50 o 75 100 125 150 175 IC [A], COLLECTOR CURRENT Tc[ C], CASE TEMPERATURE Figure 11. RBSOA Test Circuit © 2009 Fairchild Semiconductor Corporation FJD3305H1 Rev. A 4 www.fairchildsemi.com FJD3305H1 — NPN Silicon Transistor Mechanical Dimensions D-PAK Dimensions in Millimeters © 2009 Fairchild Semiconductor Corporation FJD3305H1 Rev. A 5 www.fairchildsemi.com FJD3305H1 FJD3305H1 NPN Silicon Transistor © 2009 Fairchild Semiconductor Corporation FJD3305H1 Rev. A www.fairchildsemi.com 6