FJL6920

FJL6920 FJL6920 High Voltage Color Display Horizontal Deflection Output • High Collector-Base Breakdown Voltage : BVCBO = 1700V • Low Saturation Voltage : VCE(sat) = 3V (Max.) • For Color Monitor 1 TO-264 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP* PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Rating 1700 800 6 20 30 200 150 -55 ~ 150 Units V V V A A W °C °C * Pulse Test: PW=300µs, duty Cycle=2% Pulsed Electrical Characteristics TC=25°C unless otherwise noted Symbol ICES ICBO IEBO BVCBO BVCEO BVEBO hFE1 hFE2 VCE(sat) VBE(sat) tSTG* tF* Parameter Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Storage Time Fall Time Test Conditions VCB=1400V, RBE=0 VCB=800V, IE=0 VEB=4V, IC=0 IC=500µA, IE=0 IC=5mA, IB=0 IE=500µA, IC=0 VCE=5V, IC=1A VCE=5V, IC=11A IC=11A, IB=2.75A IC=11A, IB=2.75A VCC=200V, IC=10A, RL=20Ω IB1=2.0A, IB2= - 4.0A 0.15 1700 800 6 8 5.5 8.5 3 1.5 3 0.2 V V µs µs Min. Typ. Max. 1 10 1 Units mA µA mA V V V * Pulse Test: PW=20µs, duty Cycle=1% Pulsed Thermal Characteristics TC=25°C unless otherwise noted Symbol RθjC Parameter Thermal Resistance, Junction to Case Typ Max 0.625 Units °C/W ©2001 Fairchild Semiconductor Corporation Rev. A, May 2001 FJL6920 Typical Characteristics 16 100 IB=4.0A 14 VCE = 5V IB=2.0A IB =1.5A IB =1.0A Ta = 125 C o IC [A], COLLECTOR CURRENT Ta = 25 C o 10 hFE, DC CURRENT GAIN 12 8 10 Ta = - 25 C o 6 IB=0.5A IB=0.2A 4 2 0 0 2 4 6 8 10 1 0.1 1 10 100 VCE [V], COLLECTOR-EMITTER VOLTAGE IC [A], COLLECTOR CURRENT Figure 1. Static Characteristics Figure 2. DC Current Gain 10 10 VCE(SAT) [V], SATURATION VOLTAGE Ta = 125 C 1 o o VCE(SAT) [V], SATURATION VOLTAGE IC = 3 IB IC = 5 IB Ta = 125 C 1 o o Ta = 25 C Ta = - 25 C o Ta = 25 C 0.1 0.1 Ta = - 25 C o 0.01 0.1 1 10 100 0.01 0.1 1 10 100 IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT Figure 3. Collector-Emitter Saturation Voltage Figure 4. Collector-Emitter Saturation Voltage 16 10 14 VCE = 5V VCC = 200V, IC = 10A, IB1 = 2A IC [A], COLLECTOR CURRENT 12 tSTG & tF [µs], SWITCHING TIME tSTG 1 10 8 6 0.1 tF 4 2 125 C 0 0.0 0.2 0.4 o 25 C 0.6 o - 25 C 0.01 0.8 1.0 1.2 1 10 o VBE [V], BASE-EMITTER VOLTAGE IB2 [A], REVERSE BASE CURRENT Figure 5. Base-Emitter On Voltage Figure 6. Resistive Load Switching Time ©2001 Fairchild Semiconductor Corporation Rev. A, May 2001 FJL6920 Typical Characteristics (Continued) 100 VCC = 200V, IC = 10A, IB2 = - 4A 10 VCC = 200V, IB1 = 2A, IB2 = - 4A tSTG & tF [µs], SWITCHING TIME 10 tSTG & tF [µs], SWITCHING TIME tSTG 1 1 tSTG tF 0.1 tF 0.1 0.01 1 10 1 10 IB1 [A], FORWARD BASE CURRENT IC [A], COLLECTOR CURRENT Figure 7. Resistive Load Switching Time Figure 8. Resistive Load Switching Time 100 40 IC (Pulse) t = 100ms t = 10ms t = 1ms 35 RB2 = 0, IB1 = 15A VCC = 30V, L = 200µ H IC [A], COLLECTOR CURRENT 10 IC (DC) IC [A], COLLECTOR CURRENT 30 25 1 20 15 VBE(off) = -6V 10 0.1 TC = 25 C Single Pulse 0.01 1 10 100 1000 10000 o V BE(off) = -3V 5 1 10 100 1000 10000 VCE [V], COLLECTOR-EMITTER VOLTAGE VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 9. Forward Bias Safe Operating Area Figure 10. Reverse Bias Safe Operating Area 300 250 PC [W], POWER DISSIPATION 200 150 100 50 0 0 25 50 O 75 100 125 150 175 TC [ C], CASE TEMPERATURE Figure 11. Power Derating ©2001 Fairchild Semiconductor Corporation Rev. A, May 2001 FJL6920 Package Demensions TO-264 6.00 ±0.20 20.00 ±0.20 (4.00) (8.30) (8.30) (2.00) (1.00) (9.00) (9.00) (11.00) (0.50) 20.00 ±0.20 2.50 ±0.10 1.50 ±0.20 (R1 (7.00) (7.00) 4.90 ±0.20 (1.50) 2.50 ±0.20 (1.50) 3.00 ±0.20 1.00 –0.10 +0.25 (2.00) 20.00 ±0.50 (R 2.0 ø3.3 0 ±0 .20 .00 0) ) (1.50) 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] 0.60 –0.10 +0.25 2.80 ±0.30 5.00 ±0.20 3.50 ±0.20 (0.15) (1.50) (2.80) Dimensions in Millimeters ©2001 Fairchild Semiconductor Corporation Rev. A, May 2001 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ DISCLAIMER FAST® FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ UltraFET® VCX™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2001 Fairchild Semiconductor Corporation Rev. H2