MMBT2222A

PN2222A MMBT2222A C PZT2222A C E E C TO-92 EBC SOT-23 Mark:1P B SOT-223 B NPN General Purpose Amplifier • This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. • Sourced from process 19. Absolute Maximum Ratings * Ta=25°C unless otherwise noted Symbol VCEO VCBO VEBO IC TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Operating and Storage Junction Temperature Range Value 40 75 6.0 1.0 - 55 ~ 150 Units V V V A °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Electrical Characteristics Ta=25°C unless otherwise noted Symbol Off Characteristics BV(BR)CEO BV(BR)CBO BV(BR)EBO ICEX ICBO IEBO IBL hFE Parameter Test Condition IC = 10mA, IB = 0 IC = 10µA, IE = 0 IE = 10µA, IC = 0 VCE = 60V, VEB(off) = 3.0V VCB = 60V, IE = 0 VCB = 60V, IE = 0, Ta = 125°C VEB = 3.0V, IC = 0 VCE = 60V, VEB(off) = 3.0V IC = 0.1mA, VCE = 10V IC = 1.0mA, VCE = 10V IC = 10mA, VCE = 10V IC = 10mA, VCE = 10V, Ta = -55°C IC = 150mA, VCE = 10V * IC = 150mA, VCE = 10V * IC = 500mA, VCE = 10V * IC = 150mA, VCE = 10V IC = 500mA, VCE = 10V IC = 150mA, VCE = 10V IC = 500mA, VCE = 10V 0.6 35 50 75 35 100 50 40 Min. 40 75 6.0 10 0.01 10 10 20 Max. Units V V V nA µA µA µA µA Collector-Emitter Breakdown Voltage * Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current Base Cutoff Current DC Current Gain On Characteristics 300 VCE(sat) VBE(sat) Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage * 0.3 1.0 1.2 2.0 V V V V * Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0% ©2004 Fairchild Semiconductor Corporation Rev. A1, August 2004 Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Small Signal Characteristics fT Cobo Cibo rb’Cc NF Re(hie) Current Gain Bandwidth Product Output Capacitance Input Capacitance Collector Base Time Constant Noise Figure Real Part of Common-Emitter High Frequency Input Impedance Delay Time Rise Time Storage Time Fall Time (Continued) Test Condition IC = 20mA, VCE = 20V, f = 100MHz VCB = 10V, IE = 0, f = 1MHz VEB = 0.5V, IC = 0, f = 1MHz IC = 20mA, VCB = 20V, f = 31.8MHz IC = 100µA, VCE = 10V, RS = 1.0KΩ, f = 1.0KHz IC = 20mA, VCE = 20V, f = 300MHz Min. 300 Max. Units MHz 8.0 25 150 4.0 60 pF pF pS dB Ω Switching Characteristics td tr ts tf VCC = 30V, VEB(off) = 0.5V, IC = 150mA, IB1 = 15mA VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA 10 25 225 60 ns ns ns ns Thermal Characteristics Ta=25°C unless otherwise noted Symbol PD RθJC RθJA Parameter Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max. PN2222A 625 5.0 83.3 200 357 125 *MMBT2222A 350 2.8 **PZT2222A 1,000 8.0 Units mW mW/°C °C/W °C/W * Device mounted on FR-4 PCB 1.6” × 1.6” × 0.06”. ** Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead min. 6cm2. Spice Model NPN (Is = 14.34f Xti = 3 Eg = 1.11 Vaf = 74.03 Bf = 255.9 Ne = 1.307 Ise = 14.34 Ikf = .2847 Xtb = 1.5 Br = 6.092 Isc = 0 Ikr = 0 Rc = 1 Cjc = 7.306p Mjc = .3416 Vjc = .75 Fc = .5 Cje = 22.01p Mje = .377 Vje = .75 Tr = 46.91n Tf = 411.1p Itf = .6 Vtf = 1.7 Xtf = 3 Rb = 10) ©2004 Fairchild Semiconductor Corporation Rev. A1, August 2004 Typical Characteristics V CESAT - COLLECTOR-EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN 500 V CE = 5V 0.4 β = 10 400 300 200 25 °C 125 °C 0.3 125°캜 C 25 °C 캜 0.2 100 - 40 °C 0.1 C - 40 °캜 0 0.1 0.3 1 3 10 30 100 I C - COLLECTOR CURRENT (mA) 300 1 10 100 I C - COLLECTOR CURRENT (mA) 500 Figure 1. Typical Pulsed Current Gain vs Collector Current Figure 2. Collector-Emitter Saturation Voltage vs Collector Current V BE(ON) - BASE-EMITTER ON VOLTAGE (V) V BESAT- BASE-EMITTER VOLTAGE (V) 1 VCE = 5V 1 β = 10 - 40 °C 캜 0.8 - 40 °C 2 5 °C 0.8 25 °캜 C 125 °캜 C 0.6 125 °C 0.6 0.4 0.4 1 10 100 I IC - COLLECTOR CURRENT (mA) C 500 0.2 0.1 1 10 I IC - COLLECTOR CURRENT (mA) C 25 Figure 3. Base-Emitter Saturation Voltage vs Collector Current Figure 4. Base-Emitter On Voltage vs Collector Current I CBO - COLLECTOR CURRENT (nA) 500 100 10 1 0.1 V CB = 40V 20 f = 1 MHz CAPACITANCE (pF) 16 12 C te 8 C ob 4 25 50 75 100 125 T A - AMBIENT TEMPERATURE (°C) 150 0.1 1 10 REVERSE BIAS VOLTAGE (V) 100 Figure 5. Collector Cutoff Current vs Ambient Temperature Figure 6. Emitter Transition and Output Capacitance vs Reverse Bias Voltage ©2004 Fairchild Semiconductor Corporation Rev. A1, August 2004 Typical Characteristics 400 I B1 = I B2 = Ic 10 400 I B1 = I B2 = 320 V cc = 25 V Ic 10 320 V cc = 25 V TIME (nS) TIME (nS) 240 160 t off 240 160 80 tf td ts tr 80 t on 0 10 100 I CC - COLLECTOR CURRENT (mA) I 1000 0 10 100 I CC - COLLECTOR CURRENT (mA) I 1000 Figure 7. Turn On and Turn Off Times vs Collector Current Figure 8. Switching Times vs Collector Current CHAR. RELATIVE TO VALUES AT I C= 10mA 1 PD - POWER DISSIPATION (W) 8 V CE = 10 V T A = 25oC 0.75 SOT-223 TO-92 6 h oe 0.5 SOT-23 4 h re 0.25 2 h fe h ie 0 0 0 25 50 75 100 o TEMPERATURE ( C) 125 150 0 10 20 30 40 50 I C - COLLECTOR CURRENT (mA) 60 Figure 9. Power Dissipation vs Ambient Temperature Figure 10. Common Emitter Characteristics CHAR. RELATIVE TO VALUES AT VCE= 10V CHAR. RELATIVE TO VALUES AT TA = 25oC 2.4 2 1.6 1.2 0.8 0.4 0 V CE = 10 V I C = 10 mA 1.3 1.25 1.2 1.15 1.1 1.05 1 0.95 0.9 0.85 0.8 0.75 0 5 h re h ie h fe h oe I C = 10 mA T A = 25oC h fe h ie h re h oe 0 20 40 60 80 T A - AMBIENT TEMPERATURE (o C) 100 10 15 20 25 30 VCE - COLLECTOR VOLTAGE (V) 35 Figure 11. Common Emitter Characteristics Figure 12. Common Emitter Characteristics ©2004 Fairchild Semiconductor Corporation Rev. A1, August 2004 Package Dimensions TO-92 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A1, August 2004 Package Dimensions (Continued) SOT-23 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A1, August 2004 Package Dimensions (Continued) SOT-223 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A1, August 2004 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2004 Fairchild Semiconductor Corporation Rev. I11