MMPQ2907A

FFB2907A / FMB2907A / MMPQ2907A FFB2907A E2 B2 C1 FMB2907A C2 E1 C1 MMPQ2907A E2 B2 E3 B3 E4 B4 E1 B1 SC70-6 Mark: .2F pin #1 C2 B1 E1 pin #1 B1 B2 E2 SOIC-16 Mark: MMPQ2907A pin #1 C1 NOTE: The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device. SuperSOT-6 Mark: .2F Dot denotes pin #1 C2 C1 C3 C2 C4 C4 C3 PNP Multi-Chip General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Collector-Emitter Voltage TA = 25°C unless otherwise noted Parameter Value 60 60 5.0 600 -55 to +150 Units V V V mA °C 4 Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Effective 4 Die Each Die FFB2907A 300 2.4 415 Max FMB2907A 700 5.6 180 MMPQ2907A 1,000 8.0 125 240 Units mW mW/°C °C/W °C/W °C/W  1 998 Fairchild Semiconductor Corporation FFB2907A / FMB2907A / MMPQ2907A PNP Multi-Chip General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO IB ICEX ICBO Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Base Cutoff Current Collector Cutoff Current Collector Cutoff Current IC = 10 mA, IB = 0 IC = 10 µA, IE = 0 IE = 10 µA, IC = 0 VCB = 30 V, VEB = 0.5 V VCE = 30 V, VBE = 0.5 V VCB = 50 V, IE = 0 VCB = 50 V, IE = 0, TA = 125°C 60 60 5.0 50 50 0.02 20 V V V nA nA µA µA ON CHARACTERISTICS hFE DC Current Gain IC = 0.1 mA, VCE = 10 V IC = 1.0 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 150 mA, VCE = 10 V* IC = 500 mA, VCE = 10 V* IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA IC = 150 mA, IB = 15 mA* IC = 500 mA, IB = 50 mA 75 100 100 100 50 300 0.4 1.6 1.3 2.6 V V V V VCE(sat) VBE(sat) Collector-Emitter Saturation Voltage* Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS fT Cobo Cibo Current Gain - Bandwidth Product Output Capacitance Input Capacitance IC = 50 mA, VCE = 20 V, f = 100 MHz VCB = 10 V, IE = 0, f = 100 kHz VEB = 2.0 V, IC = 0, f = 100 kHz 250 6.0 12 MHz pF pF SWITCHING CHARACTERISTICS ton td tr toff ts tf Turn-on Time Delay Time Rise Time Turn-off Time Storage Time Fall Time VCC = 6.0 V, IC = 150 mA IB1 = IB2 = 15 mA VCC = 30 V, IC = 150 mA, IB1 = 15 mA 30 8.0 20 80 60 20 ns ns ns ns ns ns *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% Spice Model PNP (Is=650.6E-18 Xti=3 Eg=1.11 Vaf=115.7 Bf=231.7 Ne=1.829 Ise=54.81f Ikf=1.079 Xtb=1.5 Br=3.563 Nc=2 Isc=0 Ikr=0 Rc=.715 Cjc=14.76p Mjc=.5383 Vjc=.75 Fc=.5 Cje=19.82p Mje=.3357 Vje=.75 Tr=111.3n Tf=603.7p Itf=.65 Vtf=5 Xtf=1.7 Rb=10) FFB2907A / FMB2907A / MMPQ2907A PNP Multi-Chip General Purpose Amplifier (continued) Typical Characteristics VCESAT - COLLECTOR EMITTE R VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN Typical Pulsed Current Gain vs Collector Current 500 VCE = 5V Collector-Emitter Saturation Voltage vs Collector Current 0.5 β = 10 0.4 0.3 0.2 0.1 0 125 °C - 40 °C 400 300 200 100 0 0.1 125 °C 25 °C 25 °C - 40 °C 0.3 1 3 10 30 100 I C - COLLECTOR CURRENT (mA) 300 1 10 100 I C - COLLECTOR CURRE NT (mA) 500 V BE( ON)- BAS E EMITTER ON VOLTAGE (V) V BESAT - BASE EMITTER VOLTAGE (V) Base-Emitter Saturation Voltage vs Collector Current 1 - 40 °C Base Emitter ON Voltage vs Collector Current 1 0.8 0.6 0.4 0.2 0 0.1 - 40 °C 0.8 0.6 0.4 0.2 0 25 °C 25 °C 125 °C β = 10 125 °C 4 VCE = 5V 1 10 100 I C - COLLECTOR CURRENT (mA) 500 1 10 I C - COLLECTOR CURRE NT (mA) 25 Collector-Cutoff Current vs Ambient Temperature I CBO - COLLE CTOR CURRENT (nA) 100 V CB = 35V 10 Input and Output Capacitance vs Reverse Bias Voltage 20 CAPACITANCE (pF) 16 12 C ib 1 8 4 0 0.1 C ob 0.1 0.01 25 50 75 100 T A - AMBIE NT TEMP ERATURE (° C) 125 1 10 REVERSE BIAS VOLTAGE (V) 50 FFB2907A / FMB2907A / MMPQ2907A PNP Multi-Chip General Purpose Amplifier (continued) Typical Characteristics (continued) Switching Times vs Collector Current 250 I B1 = I B2 = 200 V cc = 15 V Ic 10 Turn On and Turn Off Times vs Collector Current 500 I B1 = I B2 = 400 V cc = 15 V Ic 10 TIME (nS) TIME (nS) 150 100 tr tf ts 300 200 t off 50 td 100 0 10 t on 0 10 100 I C - COLLECTOR CURRENT (mA) 1000 100 I C - COLLECTOR CURRENT (mA) 1000 Rise Time vs Collector and Turn On Base Currents I B1 - TURN 0N BASE CURRENT (mA) 50 PD - POWE R DIS SIPATION (W) 1 Power Dissipation vs Ambient Temperature SOIC-16 0.75 20 10 5 30 ns t r = 15 V SOT-6 0.5 SC70 -6 0.25 2 60 ns 1 10 100 I C - COLLECTOR CURRENT (mA) 500 0 0 25 50 75 100 TE MPE RATURE (°C) 125 150 FFB2907A / FMB2907A / MMPQ2907A PNP Multi-Chip General Purpose Amplifier (continued) Typical Common Emitter Characteristics (f = 1.0kHz) CHAR. RELATIVE TO VALUES AT I C= -10mA CHAR. RELATIVE TO VALUES AT VCE = -10V Common Emitter Characteristics 5 h oe 2 1 0.5 h ie h re h fe Common Emitter Characteristics 1.3 h re h ie h fe hoe 1.2 h re and hoe 1.1 1 h ie 0.9 h fe 0.8 -4 I C = -10mA T A = 25oC -20 0.2 0.1 _ VCE = -10 V T A = 25 oC 1 _ _ _ _ 2 5 10 20 I C - COLLECTOR CURRENT (mA) _ 50 -8 -12 -16 V CE - COLLECTOR VOLTAGE (V) CHAR. RELATIVE TO VALUES AT TA = 25oC Common Emitter Characteristics 1.5 I C = -10mA 1.4 V = -10 V CE 1.3 1.2 1.1 hoe 1 0.9 0.8 0.7 0.6 0.5 -40 h fe -20 0 20 40 60 80 T A - AMBIENT TEMPERATURE ( o C) 100 h re h ie h fe h ie h re hoe 4 FFB2907A / FMB2907A / MMPQ2907A PNP Multi-Chip General Purpose Amplifier (continued) Test Circuits - 30 V 200 Ω 1.0 KΩ 0 - 16 V ≤ 200ns 50 Ω FIGURE 1: Saturated Turn-On Switching Time Test Circuit 1.5 V - 6.0 V 1 KΩ 37 Ω 1.0 KΩ 0 - 30 V ≤ 200ns 50 Ω FIGURE 2: Saturated Turn-Off Switching Time Test Circuit TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST  DISCLAIMER FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ PowerTrench  QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER  SMART START™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G