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FFB2222A / FMB2222A / MMPQ2222A
NPN Multi-Chip General-Purpose Amplifier
Description
This device is for use as a medium power amplifier and
switch requiring collector currents up to 500 mA. Sourced
from process 19.
Block Diagram
E2
C2
B2
B1
C1
E1
E2
B2
C1
C2
SC70-6
Mark: .1P
pin #1
E1
B1
Figure 1. FFB2222A Device Package
Figure 2. FFB2222A Internal Connection
C2
E1
C2
B2
E1
E2
C1
B1
C1
B2
E2
pin #1 B1
SuperSOT™-6
Mark: .1P
Dot denotes pin #1
Figure 3. FMB2222A Device Package
E1
B1
E2
B2
E3
B3
E4
SOIC-16
Mark:
MMPQ2222A
pin #1 C1
B4
C2
C1
C3
C2
E1
B1
E2
B2
E3
B3
E4
B4
C1
C1
C2
C2
C3
C3
C4
C4
C4
C4
C3
Figure 5. MMPQ2222A Device Package
© 1998 Fairchild Semiconductor Corporation
FFB2222A / FMB2222A / MMPQ2222A Rev. 1.4
Figure 4. FMB2222A Internal Connection
Figure 6. MMPQ2222A Internal Connection
www.fairchildsemi.com
FFB2222A / FMB2222A / MMPQ2222A — NPN Multi-Chip General-Purpose Amplifier
October 2015
Part Number
Top Mark
Package
Packing Method
FFB2222A
.1P
SC70 6L
Tape and Reel
FMB2222A
.1P
SSOT 6L
Tape and Reel
MMPQ2222A
MMPQ2222A
SOIC 16L
Tape and Reel
Absolute Maximum Ratings(1)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
45
V
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
75
V
VEBO
Emitter-Base Voltage
5.0
V
Collector Current - Continuous
500
mA
-55 to +150
°C
IC
TJ, TSTG
Operating and Storage Junction Temperature Range
Note:
1. These ratings are based on a maximum junction temperature of 150°C. These are steady-state limits. Fairchild
Semiconductor should be consulted on applications involving pulsed or low-duty cycle operations.
Thermal Characteristics(2)
Values are at TA = 25°C unless otherwise noted.
Symbol
PD
RθJA
Max.
Parameter
Unit
FFB2222A
FMB2222A
MMPQ2222A
Total Device Dissipation
300
700
1,000
mW
Derate Above 25°C
2.4
5.6
8.0
mW/°C
Thermal Resistance, Junction-to-Ambient
415
180
Thermal Resistance, Junction-to-Ambient,
Effective 4 Dies
125
Thermal Resistance, Junction-to-Ambient,
Each Die
240
°C/W
Note:
2. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
© 1998 Fairchild Semiconductor Corporation
FFB2222A / FMB2222A / MMPQ2222A Rev. 1.4
www.fairchildsemi.com
2
FFB2222A / FMB2222A / MMPQ2222A — NPN Multi-Chip General-Purpose Amplifier
Ordering Information
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
V(BR)CEO
Collector-Emitter Breakdown Voltage(3)
V(BR)CBO Collector-Base Breakdown Voltage
Conditions
Min.
Typ.
Max.
Unit
IC = 10 mA, IB = 0
40
V
IC = 10 μA, IE = 0
75
V
5.0
Emitter-Base Breakdown Voltage
IE = 10 μA, IC = 0
ICBO
Collector Cut-Off Current
VCB = 60 V, IE = 0
10
nA
IEBO
Emitter Cut-Off Current
VEB = 3.0 V, IC = 0
10
nA
V(BR)EBO
hFE
DC Current Gain
IC = 0.1 mA, VCE = 10 V
35
IC = 1.0 mA, VCE = 10 V
50
IC = 10 mA, VCE = 10 V
75
V(3)
100
IC = 150 mA, VCE = 1.0 V(3)
50
IC = 500 mA, VCE = 10 V(3)
40
IC = 150 mA, VCE = 10
V
300
IC = 150 mA, IB = 15 mA
0.3
IC = 500 mA, IB = 50 mA
1.0
IC = 150 mA, IB = 15 mA
1.2
IC = 500 mA, IB = 50 mA
2.0
VCE(sat)
Collector-Emitter Saturation Voltage(3)
VBE(sat)
Base-Emitter Saturation Voltage(3)
fT
Current Gain - Bandwidth Product
IC = 20 mA, VCE = 20 V,
f = 100 MHz
300
MHz
Cobo
Output Capacitance
VCB = 10 V, IE = 0,
f = 100 kHz
4.0
pF
Cibo
Input Capacitance
VEB = 0.5 V, IC = 0,
f = 100 kHz
20
pF
NF
Noise Figure
IC = 100 μA, VCE = 10 V,
RS = 1.0 kΩ, f = 1.0 kHz
2.0
dB
td
Delay Time
tr
Rise Time
ts
Storage Time
tf
Fall Time
VCC = 30 V, VBE(OFF) = 0.5 V,
IC = 150 mA, IB1 = 15 mA
VCC = 30 V, IC = 150 mA,
IB1 = IB2 = 15 mA
V
V
8
ns
20
ns
180
ns
40
ns
Note:
3. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%.
© 1998 Fairchild Semiconductor Corporation
FFB2222A / FMB2222A / MMPQ2222A Rev. 1.4
www.fairchildsemi.com
3
FFB2222A / FMB2222A / MMPQ2222A — NPN Multi-Chip General-Purpose Amplifier
Electrical Characteristics
V CESAT - COLLECTOR-EMITTER VOLTAGE (V)
h FE - TYPICAL PULSED CURRENT GAIN
500
V CE = 5V
400
125 °C
300
200
25 °C
100
- 40 °C
0
0.1
0.3
1
3
10
30
100
I C - COLLECTOR CURRENT (mA)
300
β = 10
1
- 40 °C
0.8
25 °C
125 °C
0.6
0.4
1
I
C
10
100
- COLLECTOR CURRENT (mA)
β = 10
0.3
25 °C
0.1
- 40 °C
1
10
100
I C - COLLECTOR CURRENT (mA)
500
500
1
VCE = 5V
0.8
- 40 °C
25 °C
0.6
125 °C
0.4
0.2
0.1
Figure 9. Base-Emitter Saturation Voltage vs.
Collector Current
1
10
I C - COLLECTOR CURRENT (mA)
25
Figure 10. Base-Emitter On Voltage vs.
Collector Current
500
100
V
CB
20
= 40V
CAPACITANCE (pF)
I CBO - COLLECTOR CURRENT (nA)
125 °C
0.2
Figure 8. Collector-Emitter Saturation Voltage vs.
Collector Current
V BE(ON) - BASE-EMITTER ON VOLTAGE (V)
V BESAT - BASE-EMITTER VOLTAGE (V)
Figure 7. Typical Pulsed Current Gain vs.
Collector Current
0.4
10
1
0.1
16
12
C te
8
4
25
50
75
100
125
T A - AMBIENT TEMPERATURE (° C)
150
0.1
Figure 11. Collector Cut-Off Current vs.
Ambient Temperature
© 1998 Fairchild Semiconductor Corporation
FFB2222A / FMB2222A / MMPQ2222A Rev. 1.4
f = 1 MHz
C ob
1
10
REVERSE BIAS VOLTAGE (V)
100
Figure 12. Emitter Transition and Output
Capacitance vs. Reverse Bias Voltage
www.fairchildsemi.com
4
FFB2222A / FMB2222A / MMPQ2222A — NPN Multi-Chip General-Purpose Amplifier
Typical Performance Characteristics
400
400
I B1 = I B2 =
320
Ic
V cc = 25 V
TIME (nS)
TIME (nS)
240
160
240
ts
160
tr
t off
80
tf
80
t on
td
100
I C - COLLECTOR CURRENT (mA)
0
10
1000
1
SOIC-16
SOT-6
0.5
SC70 -6
0.25
0
0
25
50
75
100
TE MPE RATURE (°C)
125
150
V CE = 10 V
I C = 10 mA
2
h re
h ie
h fe
1.2
hoe
0.8
0.4
0
20
40
60
80
T A - AMBIENT TEMPERATURE ( o C)
100
Figure 17. Common Emitter Characteristics
© 1998 Fairchild Semiconductor Corporation
FFB2222A / FMB2222A / MMPQ2222A Rev. 1.4
1000
V CE = 10 V
T A = 25oC
6
h oe
4
h re
2
h fe
0
h ie
0
10
20
30
40
50
I C - COLLECTOR CURRENT (mA)
60
Figure 16. Common Emitter Characteristics
1.6
0
8
CHAR. RELATIVE TO VALUES AT VCE = 10V
CHAR. RELATIVE TO VALUES AT TA = 25oC
Figure 15. Power Dissipation vs.
Ambient Temperature
2.4
100
I C - COLLECTOR CURRENT (mA)
Figure 14. Switching Time vs. Collector Current
CHAR. RELATIVE TO VALUES AT I C = 10mA
PD - POWE R DIS SIPATION (W)
Figure 13. Turn-On and Turn-Off Times vs.
Collector Current
0.75
10
320
V cc = 25 V
0
10
Ic
I B1 = I B2 =
10
1.3
I C = 10 mA
T A = 25oC
1.25
1.2
h fe
1.15
h ie
1.1
1.05
1
h re
0.95
0.9
0.85
hoe
0.8
0.75
0
5
10
15
20
25
30
VCE - COLLECTOR VOLTAGE (V)
35
Figure 18. Common Emitter Characteristics
www.fairchildsemi.com
5
FFB2222A / FMB2222A / MMPQ2222A — NPN Multi-Chip General-Purpose Amplifier
Typical Performance Characteristics (Continued)
FFB2222A / FMB2222A / MMPQ2222A — NPN Multi-Chip General-Purpose Amplifier
Test Circuits
30 V
200 Ω
16 V
Ω
1.0 KΩ
0
≤ 200ns
500 Ω
Figure 19. Saturated Turn-On Switching Time
6.0 V
- 1.5 V
1k
37 Ω
30 V
Ω
1.0 KΩ
0
≤ 200ns
50 Ω
Figure 20. Saturated Turn-Off Switching Time
© 1998 Fairchild Semiconductor Corporation
FFB2222A / FMB2222A / MMPQ2222A Rev. 1.4
www.fairchildsemi.com
6
SYMM
C
L
0.95
C
3.00
2.80
A
4
6
0.95
1.00 MIN
B
3.00
2.60
1.70
1.50
1
2.60
C
3
0.50
0.30
0.95
0.20
1.90
M
0.70 MIN
A B
LAND PATTERN RECOMMENDATION
(0.30)
SEE DETAIL A
1.10 MAX
H
1.00
0.70
C
0.10
0.00
0.10 C
GAGE PLANE
0.25
8°
0°
0.55
0.35
SEATING PLANE
0.60 REF
DETAIL A
SCALE: 50X
0.20
0.08
NOTES: UNLESS OTHERWISE SPECIFIED
A) THIS PACKAGE CONFORMS TO JEDEC MO-193.
VAR. AA, ISSUE E.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C PACKAGE LENGTH DOES NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS. MOLD
FLASH, PROTRUSIONS OR GATE BURRS SHALL
NOT EXCEED 0.25mm PER END. PACKAGE WIDTH
DOES NOT INCLUDE INTERLEAD FLASH OR
PROTRUSION. INTERLEAD FLASH OR
PROTRUSION SHALL NOT EXCEED 0.25mm PER
SIDE. PACKAGE LENGTH AND WIDTH DIMENSIONS
ARE DETERMINED AT DATUM H.
D) DRAWING FILE NAME: MKT-MA06AREVF
10.00
9.80
8.89
16
A
8.89
9
1.75
B
6.00
4.00
3.80
1
PIN #1
(0.30)
0.51
1.27 0.31
3.85
7.35
8
0.25
1.27
0.65
LAND PATTERN RECOMMENDATION
C B A
TOP VIEW
1.75 MAX
1.50
1.25
SEE DETAIL A
0.25
0.05
C
FRONT VIEW
0.50
0.25
R0.10
GAGE PLANE
R0.10
0.90
0.50
0.36
SEATING PLANE
(1.04)
DETAIL A
SCALE: 2:1
0.10 C
0.25
0.19
NOTES:
A) THIS PACKAGE CONFORMS TO JEDEC
MS-012, VARIATION AC, ISSUE C.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS
D) CONFORMS TO ASME Y14.5M-2009
E) LANDPATTERN STANDARD:
SOIC127P600X175-16AM
F) DRAWING FILE NAME: M16AREV13.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
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