MMPQ2222

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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. MMPQ2222 MMPQ2222 NPN Multi-Chip General Purpose Amplifier • This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. • Sourced from process 19. E1 B1 E2 B2 E3 B3 E4 B4 C1 C1 C2 C2 C3 C3 C4 C4 SOIC-16 Mark: MMPQ2222 Absolute Maximum Ratings * Ta=25°C unless otherwise noted Symbol VCEO Collector-Emitter Voltage Parameter Value 30 Units V VCBO VEBO Collector-Base Voltage 60 V Emitter-Base Voltage 5.0 IC Collector Current V 500 mA TJ, TSTG Operating and Storage Junction Temperature Range - 55 ~ +155 °C - Continuous * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Electrical Characteristics Ta=25°C unless otherwise noted Symbol Off Characteristics Parameter Test Condition Min. Max. Units V(BR)CEO Collector-Emitter Breakdown Voltage * IC = 10mA, IB = 0 30 V V(BR)CBO Collector-Base Breakdown Voltage IC = 10µA, IE = 0 60 V V(BR)EBO Emitter-Base Breakdown Voltage IC = 10µA, IC = 0 5.0 ICBO Collector Cutoff Current VCB = 50V, IE = 0 50 nA IEBO Emitter Cutoff Current VEB= 3.0V, IC = 0 50 nA V On Characteristics * 75 100 50 hFE DC Current Gain IC = 10mA, VCE = 10V IC = 150mA, VCE = 1.0V * IC = 150mA, VCE = 1.0V * VCE(sat) Collector-Emitter Saturation Voltage * IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA 0.4 1.6 V V VBE(sat) Base-Emitter Saturation Voltage * IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA 1.3 2.6 V V IC = 20mA, VCE = 20V, f = 100MHz 300 MHz Small Signal Characteristics fT Current GAin Bandwidth Product Cobo Output Capacitance VCB = 10V, IE = 0, f = 100kHz 4.0 pF Cibo Input Capacitance VEB = 0.5V, IE = 0, f = 100kHz 20 pF NF Noise Figure IC = 100µA, VCE = 10V, RS = 1.0kΩ, f = 1.0kHz 2.0 dB * Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0% ©2004 Fairchild Semiconductor Corporation Rev. A, October 2004 Symbol PD RθJA Total Device Dissipation Derate above 25°C Parameter Max. 1000 8.0 Units mW mW/°C Thermal Resistance, Junction to Ambient Effective 4 Die Each Die 125 240 °C/W °C/W ©2004 Fairchild Semiconductor Corporation Rev. A, October 2004 MMPQ2222 Thermal Characteristics Ta=25°C unless otherwise noted MMPQ2222 vs Collector Current 500 V CE = 5V 400 125 °C 300 200 25 °C 100 - 40 °C 0 0.1 0.3 1 3 10 30 100 I C - COLLECTOR CURRENT (mA) 300 V CESAT - COLLECTOR-EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN Typical Characteristics Voltage vs Collector Current β β β = 10 β β β 1 - 40 °C 0.8 25 °C 125 °C 0.6 0.4 1 I C 10 100 - COLLECTOR CURRENT (mA) β β =β10 0.3 ββ β 125 °C 0.2 25 °C 0.1 - 40 °C 1 500 500 Collector Current 1 VCE = 5V 0.8 - 40 °C 25 °C 0.6 125 °C 0.4 0.2 0.1 Figure 3. Base-Emitter Saturation Voltage vs Collector Current 1 10 I C - COLLECTOR CURRENT (mA) 25 Figure 4. Base-Emitter On Voltage vs Collector Current 500 100 V CB 20 = 40V CAPACITANCE (pF) I CBO - COLLECTOR CURRENT (nA) 10 100 I C - COLLECTOR CURRENT (mA) Figure 2. Collector-Emitter Saturation Voltage vs Collector Current V BE(ON) - BASE-EMITTER ON VOLTAGE (V) V BESAT - BASE-EMITTER VOLTAGE (V) Figure 1. Typical Pulsed Current Gain vs Collector Current Voltage vs Collector Current 0.4 10 1 0.1 f = 1 MHz 16 12 C te 8 C ob 4 25 50 75 100 125 T A - AMBIENT TEMPERATURE (° C) Figure 5. Collector Cutoff Current vs Ambient Temperature ©2004 Fairchild Semiconductor Corporation 150 0.1 1 10 REVERSE BIAS VOLTAGE (V) 100 Figure 6. Emitter Transition and Output Capacitance vs Reverse Bias Voltage Rev. A, October 2004 PC [W], POWER DISSIPATION 0.75 0.50 0.25 0.00 25 50 75 100 125 150 CHAR. RELATIVE TO VALUES AT I C = 10mA (Continued) 1.00 0 Common Emitter Characteristics 8 V CE = 10 V T A = 25oC 6 h oe 4 h re 2 h fe h ie 0 0 10 O T C [ C], CASE TEMPERATURE Common Emitter Characteristics V CE = 10 V I C = 10 mA 2 h re h ie h fe 1.6 hoe 1.2 0.8 0.4 0 0 20 40 60 80 T A - AMBIENT TEMPERATURE ( o C) Figure 9. Common Emitter Characteristics ©2004 Fairchild Semiconductor Corporation 20 30 40 50 I C - COLLECTOR CURRENT (mA) 60 Figure 8. Common Emitter Characteristics 100 CHAR. RELATIVE TO VALUES AT VCE = 10V CHAR. RELATIVE TO VALUES AT TA = 25oC Figure 7. Power Dissipation vs Ambient Temperature 2.4 MMPQ2222 Typical Characteristics Common Emitter Characteristics 1.3 I C = 10 mA T A = 25oC 1.25 h fe 1.2 1.15 h ie 1.1 1.05 1 h re 0.95 0.9 0.85 hoe 0.8 0.75 0 5 10 15 20 25 30 VCE - COLLECTOR VOLTAGE (V) 35 Figure 10. Common Emitter Characteristics Rev. A, October 2004 MMPQ2222 Test Circuit 30 V 200 Ω 16 V Ω 1.0 KΩ 0 ≤ 200ns 500 Ω Figure 1. Saturated Turn-On Switching Time 6.0 V - 1.5 V 1k 37 Ω 30 V Ω 1.0 KΩ 0 ≤ 200ns 50 Ω Figure 2. Saturated Turn-Off Switching Time ©2004 Fairchild Semiconductor Corporation Rev. A, October 2004 MMPQ2222 Package Dimensions SOIC-16 Dimensions in Millimeters ©2004 Fairchild Semiconductor Corporation Rev. A, October 2004 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ ActiveArray™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UltraFET® VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2004 Fairchild Semiconductor Corporation Rev. I13 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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