MMPQ2222A

MMPQ2222A Preferred Device Quad General Purpose Transistor NPN Silicon http://onsemi.com MAXIMUM RATINGS Rating Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous Symbol VCEO VCB VEB IC Value 40 75 5.0 500 Four Transistors Equal Power Total Power Dissipation @ TA = 25°C Derate above 25°C Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range PD Watts 1.0 8.0 2.4 19.2 −55 to +150 mW/°C Watts mW/°C °C Unit Vdc Vdc Vdc mAdc 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 PD TJ, Tstg SO−16 CASE 751B STYLE 4 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. MARKING DIAGRAM MMPQ2222A AWLYWW MMPQ2222A ic Device Code A sembly Location WL Lot Y WW Week Device MMPQ2222A = Specif= As= Wafer = Year = Work ORDERING INFORMATION Package SO−16 Shipping 48 Units/Rail Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006 August, 2006 − Rev. 2 1 Publication Order Number: MMPQ2222A/D MMPQ2222A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector − Emitter Breakdown Voltage (Note 1) (IC = 10 mAdc, IB = 0) Collector − Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter − Base Breakdown Voltage (IB = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 50 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICBO 40 75 5.0 − − − − − − − − − − − − − − − 50 10 100 nAdc Vdc Vdc Vdc nAdc IEBO ON CHARACTERISTICS DC Current Gain (Note 1) (IC = 100 mA, VCE = 10 V) (IC = 1.0 mA, VCE = 10 V) (IC = 10 mA, VCE = 10 V) (IC = 150 mA, VCE = 10 V) (IC = 500 mA, VCE = 10 V) (IC = 150 mA, VCE = 1.0 V) Collector − Emitter Saturation Voltage (Note 1) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) Base − Emitter Saturation Voltage (Note 1) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) hFE − 35 50 75 100 40 50 − − − − − − − − − − − − − − − − − 300 − − Vdc 0.3 1.0 Vdc 1.2 2.0 VCE(sat) VBE(sat) DYNAMIC CHARACTERISTICS Current − Gain − Bandwidth Product (Note 1) (IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) fT Cob Cib 200 − − 350 4.5 17 − − − MHz pF pF SWITCHING CHARACTERISTICS Turn−On Time (VCC = 30 Vdc, VBE(off) = −0.5 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) Turn−Off Time (VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. ton − 25 − ns toff − 250 − ns http://onsemi.com 2 MMPQ2222A SWITCHING TIME EQUIVALENT TEST CIRCUITS +30 V +16 V 0 −2 V 1.0 to 100 μs, DUTY CYCLE ≈ 2.0% 1 kΩ < 2 ns 200 +16 V 0 CS* < 10 pF −14 V < 20 ns 1.0 to 100 μs, DUTY CYCLE ≈ 2.0% 1k 1N914 +30 V 200 CS* < 10 pF −4 V Scope rise time < 4 ns *Total shunt capacitance of test jig, connectors, and oscilloscope. Figure 1. Turn−On Time Figure 2. Turn−Off Time 1000 700 500 hFE , DC CURRENT GAIN 300 200 TJ = 125°C 25°C 100 70 50 30 20 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 −55°C VCE = 1.0 V VCE = 10 V 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mA) 30 50 70 100 200 300 500 700 1.0 k Figure 3. DC Current Gain VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) 1.0 TJ = 25°C 0.8 IC = 1.0 mA 0.6 10 mA 150 mA 500 mA 0.4 0.2 0 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 IB, BASE CURRENT (mA) 2.0 3.0 5.0 10 20 30 50 Figure 4. Collector Saturation Region http://onsemi.com 3 MMPQ2222A 200 100 70 50 t, TIME (ns) 30 20 10 7.0 5.0 3.0 2.0 5.0 7.0 10 200 300 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 500 IC/IB = 10 TJ = 25°C tr @ VCC = 30 V td @ VEB(off) = 2.0 V td @ VEB(off) = 0 500 300 200 100 70 50 30 20 10 7.0 5.0 t′s = ts − 1/8 tf VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25°C t, TIME (ns) tf 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) 300 500 Figure 5. Turn − On Time Figure 6. Turn − Off Time 10 8.0 IC = 1.0 mA, RS = 150 Ω 500 μA, RS = 200 Ω 100 μA, RS = 2.0 kΩ 50 μA, RS = 4.0 kΩ RS = OPTIMUM RS = SOURCE RS = RESISTANCE 10 f = 1.0 kHz 8.0 NF, NOISE FIGURE (dB) IC = 50 μA 100 μA 500 μA 1.0 mA NF, NOISE FIGURE (dB) 6.0 6.0 4.0 4.0 2.0 0 0.01 0.02 0.05 0.1 0.2 2.0 0 50 0.5 1.0 2.0 5.0 10 20 50 100 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (OHMS) Figure 7. Frequency Effects f T, CURRENT−GAIN BANDWIDTH PRODUCT (MHz) Figure 8. Source Resistance Effects 30 20 CAPACITANCE (pF) Ceb 10 7.0 5.0 Ccb 3.0 2.0 0.1 500 VCE = 20 V TJ = 25°C 300 200 100 70 50 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE VOLTAGE (VOLTS) 20 30 50 Figure 9. Capacitances Figure 10. Current−Gain Bandwidth Product http://onsemi.com 4 MMPQ2222A 1.0 TJ = 25°C 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 10 V 0.4 COEFFICIENT (mV/ °C) V, VOLTAGE (VOLTS) 1.0 V 0 −0.5 −1.0 −1.5 −2.0 VCE(sat) @ IC/IB = 10 0 0.1 0.2 50 100 200 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 500 1.0 k −2.5 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) 500 RqVB for VBE RqVC for VCE(sat) +0.5 0.2 Figure 11. “On” Voltages Figure 12. Temperature Coefficients http://onsemi.com 5 MMPQ2222A PACKAGE DIMENSIONS SO−16 CASE 751B−05 ISSUE J − A− 16 9 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. DIM A B C D F G J K M P R MILLIMETERS MIN MAX 9.80 10.00 3.80 4.00 1.35 1.75 0.35 0.49 0.40 1.25 1.27 BSC 0.19 0.25 0.10 0.25 0_ 7_ 5.80 6.20 0.25 0.50 INCHES MIN MAX 0.386 0.393 0.150 0.157 0.054 0.068 0.014 0.019 0.016 0.049 0.050 BSC 0.008 0.009 0.004 0.009 0_ 7_ 0.229 0.244 0.010 0.019 − B− 1 8 P 8 PL 0.25 (0.010) M B S G F K C −T− SEATING PLANE R X 45 _ M D 16 PL M J 0.25 (0.010) TB S A S SOLDERING FOOTPRINT 0.060 1.52 STYLE 4: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. COLLECTOR, DYE #1 COLLECTOR, #1 COLLECTOR, #2 COLLECTOR, #2 COLLECTOR, #3 COLLECTOR, #3 COLLECTOR, #4 COLLECTOR, #4 BASE, #4 EMITTER, #4 BASE, #3 EMITTER, #3 BASE, #2 EMITTER, #2 BASE, #1 EMITTER, #1 0.275 7.0 0.155 4.0 0.024 0.6 0.050 1.270 inches mm ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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