SI3861

Si3861DV August 2001 Si3861DV Integrated Load Switch General Description This device is particularly suited for compact power management in portable electronic equipment where 2.5V to 8V input and 2.8A output current capability are needed. This load switch integrates a small N-Channel power MOSFET (Q1) that drives a large P-Channel power MOSFET (Q2) in one tiny SuperSOTTM-6 package. Applications • Load switch • Power management Features • –2.8 A, –8 V. RDS(ON) = 55 mΩ @ VGS = –4.5 V RDS(ON) = 70 mΩ @ VGS = –2.5 V RDS(ON) = 100 mΩ @ VGS = –1.8 V • Control MOSFET (Q1) includes Zener protection for ESD ruggedness (>6KV Human body model) • High performance trench technology for extremely low RDS(ON) S1 D1 D2 Vin,R1 ON/OFF Q2 Equivalent Circuit 3 2 Q1 4 5 6 Vout,C1 IN Vout,C1 R2 + V DROP – OUT G2 SuperSOT Pin 1 TM -6 G1 S2 R1,C1 1 See Application Circuit ON/OFF SuperSOT™-6 Absolute Maximum Ratings Symbol VIN VON/OFF ILoad PD TJ, TSTG Parameter Maximum Input Voltage TA=25oC unless otherwise noted Ratings ±8 –0.5 to 8 (Note 1) Units V V A W °C High level ON/OFF voltage range Load Current – Continuous – Pulsed Maximum Power Dissipation (Note 1) –2.8 –9 0.7 –55 to +150 Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1) (Note 1) 180 60 °C/W °C/W Package Marking and Ordering Information Device Marking .861 Device Si3861DV Reel Size 7’’ Tape width 8mm Quantity 3000 units 2001 Fairchild Semiconductor Corporation Si3861DV Rev B(W) Si3861DV Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVIN ILoad IFL IRL VON/OFF (th) RDS(on) Vin Breakdown Voltage Zero Gate Voltage Drain Current Leakage Current, Forward Leakage Current, Reverse (Note 2) VON/OFF = 0 V, ID = –250 µA VIN = 6.4 V, VON/OFF = 0 V, VON/OFF = 0 V VIN = 8 V 8 –1 –100 100 0.4 0.9 34 45 64 3.1 3.8 1.5 55 70 100 4 5 V µA nA nA V mΩ VON/OFF = 0 V, VIN = –8 V VIN = VON/OFF, ID = –250 µA VIN = 4.5 V, VIN = 2.5 V, VIN = 1.8 V, VIN = 4.5 V, VIN = 2.7 V, ID = –2.8A ID = –2.5 A ID = –2.0 A ID = 0.4A ID = 0.2 A On Characteristics Gate Threshold Voltage Static Drain–Source On–Resistance (Q2) Static Drain–Source On–Resistance (Q1) RDS(on) Ω Drain–Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward Voltage VON/OFF = 0 V, IS = –0.6 A (Note 2) –0.6 –1.2 A V Notes: 1. R θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θJC is guaranteed by design while R θJA is determined by the user’s board design. 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. Si3861DV Load Switch Application Circuit IN R1 Q2 C1 OUT Q1 ON/OFF LOAD R2 External Component Recommendation: For additional in-rush current control, R2 and C1 can be added. For more information, see application note AN1030. Si3861DV Rev B(W) Si3861DV 0.4 0.35 0.3 -VDROP, (V) 0.25 0.2 0.15 0.1 0.05 0 0 1 2 3 -IL, (A) 4 5 6 TJ = 25 C O 0.4 VIN = -1.8V VON/OFF = -1.5V -8V PW = 300us, D < 2% 0.35 TJ = 125OC -VDROP, (V) 0.3 0.25 0.2 0.15 0.1 0.05 0 0 VIN = -2.5V VON/OFF = -1.5V -8V PW = 300us, D < 2% TJ = 125OC TJ = 25OC 1 2 3 -IL, (A) 4 5 6 Figure 1. Conduction Voltage Drop Variation with Load Current. 0.4 0.35 0.3 -VDROP, (V) 0.25 0.2 0.15 0.1 0.05 0 0 1 2 3 -IL, (A) 4 5 6 VIN = -4.5V VON/OFF = -1.5V -8V PW = 300us, D < 2% Figure 2. Conduction Voltage Drop Variation with Load Current. 0.15 0.125 0.1 0.075 TJ = 125 C 0.05 0.025 0 1 2 3 4 -VIN, INPUT VOLTAGE (V) 5 TJ = 25 C O O TJ = 125OC TJ = 25OC Figure 3. Conduction Voltage Drop Variation with Load Current. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 RDS(ON), ON-RESISTANCE ( ) IL = -1A VON/OFF = -1.5V -8V PW = 300us, D < 2% Figure 4. On-Resistance Variation With Input Voltage RθJA(t) = r(t) + RθJA RθJA = 156 °C/W P(pk) 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 Si3861DV Rev B(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT ™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ DISCLAIMER FAST ® FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench ® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER ® SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET ® VCX™ STAR*POWER is used under license FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4