SI3861BDV

Si3861BDV New Product Vishay Siliconix Load Switch with Level-Shift PRODUCT SUMMARY VDS2 (V) 4.5 to 20 FEATURES ID (A) "2.3 "1.9 "1.7 rDS(on) (W) 0.075 @ VIN = 10 V 0.120 @ VIN = 5.0 V 0.145 @ VIN = 4.5 V D D D D D D D 4.5-V Rated ESD Protected: 3000 V 105-mW Low rDS(on) TrenchFETr 4.5 to 20-V Input 1.5 to 8 -V Logic Level Control Low Profile, Small Footprint TSOP-6 Package 3000-V ESD Protection On Input Switch, VON/OFF D Adjustable Slew-Rate RoHS COMPLIANT DESCRIPTION The Si3861BDV includes a p- and n-channel MOSFET in a single TSOP-6 package. The low on-resistance p-channel TrenchFETR is tailored for use as a load switch. The n-channel, with an external resistor, can be used as a level-shift to drive the p-channel load-switch. The n-channel MOSFET has internal ESD protection and can be driven by logic signals as low as 1.5-V. The Si3861DV operates on supply lines from 4.5 to 20-V, and can drive loads up to 2.3 A. APPLICATION CIRCUITS Si3861BDV 2, 3 VOUT Q2 6 6 C1 Time ( mS) 6 tr td(on) 2 8 td(off) 10 Switching Variation R2 @ VIN = 5 V, R1 = 20 kW tf 4 VIN R1 ON/OFF 5 Q1 Co LOAD 4 Ci IL = 1 A VON/OFF = 3 V Ci = 10 mF Co = 1 mF 6 R2 (kW) 8 10 12 1 R2 0 0 GND 2 4 R2 Note: For R2 switching variations with other VIN/R1 combinations See Typical Characteristics COMPONENTS R1 R2 C1 Pull-Up Resistor Optional Slew-Rate Control Optional Slew-Rate Control Typical 10 kW to 1 mW* Typical 0 to 100 kW* Typical 1000 pF The Si3861BDV is ideally suited for high-side load switching in portable applications. The integrated n-channel level-shift device saves space by reducing external components. The slew rate is set externally so that rise-times can be tailored to different load types. *Minimum R1 value should be at least 10 x R2 to ensure Q1 turn-on. Document Number: 73343 S-51015—Rev. A, 23-May-05 www.vishay.com 1 Si3861BDV Vishay Siliconix FUNCTIONAL BLOCK DIAGRAM TSOP-6 Top View S2 6 5 R1, C1 6 ON/OFF 5 Q1 R1, C1 New Product Si3861BDV 4 Q2 2, 3 D2 R2 1 D2 2 D2 3 4 S2 ON/OFF Ordering Information: Si3861BDV-T1—E3 (Lead (Pb)-Free) R2 1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Input Voltage ON/OFF Voltage Load Current Continuous Intrinsic Diode Conductiona Maximum Power Dissipationa Operating Junction and Storage Temperature Range ESD Rating, MIL-STD-883D Human Body Model (100 pF, 1500 W) Continuousa, b Pulsedb, c Symbol VIN VON/OFF IL IS PD TJ, Tstg ESD Limit 20 8 "2.3 "4 −1 0.83 −55 to 150 3 Unit V A W _C kV THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient (continuous current)a Maximum Junction-to-Foot (Q2) Symbol RthJA RthJF Typical 120 60 Maximum 150 80 Unit _C/W SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter OFF Characteristics Reverse Leakage Current Diode Forward Voltage IFL VSD VIN = 30 V, VON/OFF = 0 V IS = −1 A −0.8 1 −1 mA V Symbol Test Condition Min Typ Max Unit ON Characteristics Input Voltage Range VIN VIN = 10 V On-Resistance (p-channel) @ 1 A rDS(on) () VON/OFF = 1.5 V ID = 1 A VIN = 5.0 V VIN = 4.5 V 1 1 4.5 0.060 0.096 0.115 20 0.075 0.120 0.145 A W V On-State (p-channel) Drain-Current On State (p channel) Drain Current ID( ) D(on) VIN-OUT v 0.2 V, VIN = 10 V, VON/OFF = 1.5 V VIN-OUT v 0.3 V, VIN = 5 V, VON/OFF = 1.5 V Notes a. Surface Mounted on FR4 Board. b. VIN = 12, VON/OFF = 8 V, TA = 25_C. c. Pulse test: pulse width v300 ms, duty cycle v2%. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 73343 S-51015—Rev. A, 23-May-05 2 Si3861BDV New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0.50 0.45 0.40 0.35 V DROP (V) 0.30 0.25 0.20 0.15 0.10 0.05 0.00 0 1 2 3 IL − (A) 4 5 6 TJ = 25_C TJ = 125_C V DROP (V) Vishay Siliconix VDROP vs. IL @ VIN = 10 V VON/OFF = 1.5 to 8 V 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 1 VDROP vs. IL @ VIN = 5 V VON/OFF = 1.5 to 8 V TJ = 125_C TJ = 25_C 2 3 IL − (A) 4 5 6 1.2 1.0 0.8 0.6 VDROP vs. IL @ VIN = 4.5 V VON/OFF = 1.5 to 8 V 2.0 1.8 1.6 1.4 V DROP (V) 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 VDROP vs. VIN @ IL = 1 A IL = 1 A VON/OFF = 1.5 to 8 V V DROP (V) TJ = 125_C 0.4 0.2 0.0 0 1 2 3 IL − (A) 4 TJ = 25_C TJ = 125_C TJ = 25_C 2 4 6 VIN (V) 8 10 12 5 6 VDROP Variance vs. Junction Temperature 0.08 0.06 V DROP Variance (V) 0.04 0.02 0.00 −0.02 −0.04 −50 IL = 1 A VON/OFF = 1.5 to 8 V r SS(on) − On-Resistance ( W ) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 −25 0 25 50 75 100 125 150 0 On-Resistance vs. Input Voltage IL = 1 A VON/OFF = 1.5 to 8 V VIN = 5 V VIN = 10 V TJ = 125_C TJ = 25_C 2 4 6 VIN (V) 8 10 12 TJ − Junction Temperature (_C) Document Number: 73343 S-51015—Rev. A, 23-May-05 www.vishay.com 3 Si3861BDV Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized On-Resistance vs. Junction Temperature Switching Variation R2 @ VIN = 10 V, R1 = 20 kW tf td(off) IL = 1 A VON/OFF = 3 V Ci = 10 mF Co = 1 mF 1.8 1.6 rDS(on) − On-Resiistance (Normalized) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 −100 18 16 14 VIN = 10 V VIN = 5 V Time ( mS) 12 10 8 6 td(on) tr IL = 1 A VON/OFF = 1.5 to 8 V 4 2 0 −50 0 50 100 150 200 0 2 4 6 R2 (kW) 8 10 12 TJ − Junction Temperature (_C) 10 Switching Variation R2 @ VIN = 5 V, R1 = 20 kW tf 14 12 10 Time ( mS) 8 6 4 2 0 Switching Variation R2 @ VIN = 4.5 V, R1 = 20 kW IL = 1 A VON/OFF = 3 V Ci = 10 mF Co = 1 mF tr tf td(off) td(on) 8 td(off) Time ( mS) 6 4 tr td(on) 2 IL = 1 A VON/OFF = 3 V Ci = 10 mF Co = 1 mF 0 2 4 6 R2 (kW) 8 10 12 0 0 2 4 6 R2 (kW) 8 10 12 250 Switching Variation R2 @ VIN = 10 V, R1 = 300 kW td(off) IL = 1 A VON/OFF = 3 V Ci = 10 mF Co = 1 mF 120 100 80 Switching Variation R2 @ VIN = 5 V, R1 = 300 kW td(off) tf 200 Time ( mS) 150 tf Time ( mS) 60 40 20 100 tr 50 td(on) 0 0 20 40 60 R2 (kW) 80 100 120 IL = 1 A VON/OFF = 3 V Ci = 10 mF Co = 1 mF td(on) tr 0 0 20 40 60 R2 (kW) 80 100 120 www.vishay.com 4 Document Number: 73343 S-51015—Rev. A, 23-May-05 Si3861BDV New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Switching Variation R2 @ VIN = 4.5 V, R1 = 300 kW tf td(off) IL = 1 A VON/OFF = 3 V Ci = 10 mF Co = 1 mF Vishay Siliconix 120 100 80 Time ( mS) 60 40 20 0 0 20 tr td(on) 40 60 R2 (kW) 80 100 120 2 1 Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedance, Junction-to-Ambient Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 0.02 Single Pulse PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 150_C/W 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted t1 t2 0.01 10−4 10−3 10−2 10−1 1 10 100 600 Square Wave Pulse Dureation (sec) Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73343. Document Number: 73343 S-51015—Rev. A, 23-May-05 www.vishay.com 5 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1