SI3861BDV-T1-E3

Si3861BDV Vishay Siliconix Load Switch with Level-Shift FEATURES PRODUCT SUMMARY VDS2 (V) RDS(on) (Ω) 0.075 at VIN = 10 V ± 2.3 4.5 to 20 0.120 at VIN = 5.0 V ± 1.9 0.145 at VIN = 4.5 V ± 1.7 • Halogen-free According to IEC 61249-2-21 Definition • 4.5 V Rated • ESD Protected: 3000 V • 105 mΩ Low RDS(on) TrenchFET® • 4.5 V to 20 V Input • 1.5 V to 8 V Logic Level Control • Low Profile, Small Footprint TSOP-6 Package • 3000 V ESD Protection On Input Switch, VON/OFF • Adjustable Slew-Rate • Compliant to RoHS Directive 2002/95/EC ID (A) DESCRIPTION The Si3861BDV includes a P- and N-Channel MOSFET in a single TSOP-6 package. The low on-resistance P-Channel TrenchFET® is tailored for use as a load switch. The N-Channel, with an external resistor, can be used as a level- shift to drive the P-Channel load-switch. The N-Channel MOSFET has internal ESD protection and can be driven by logic signals as low as 1.5 V. The Si3861DV operates on supply lines from 4.5 to 20 V, and can drive loads up to 2.3 A. APPLICATION CIRCUITS Si3861BDV 10 tf 2, 3 4 8 VOUT VIN td(off) Q2 C1 6 Time ( µS) R1 6 6 tr 4 5 ON/OFF LOAD Co Q1 IL = 1 A VON/OFF = 3 V Ci = 10 µF Co = 1 µF 2 td(on) 0 Ci 1 0 GND COMPONENTS R1 4 6 8 10 12 R2 (kΩ) R2 R2 2 Pull-Up Resistor Typical 10 kΩ to 1 mΩ* R2 Optional Slew-Rate Control Typical 0 to 100 kΩ* C1 Optional Slew-Rate Control Typical 1000 pF Note: For R2 switching variations with other VIN/R1 combinations See Typical Characteristics The Si3861BDV is ideally suited for high-side load switching in portable applications. The integrated N-Channel level-shift device saves space by reducing external components. The slew rate is set externally so that rise-times can be tailored to different load types. Note: * Minimum R1 value should be at least 10 x R2 to ensure Q1 turn-on. Document Number: 73343 S09-2110-Rev. B, 12-Oct-09 www.vishay.com 1 New Product Si3861BDV Vishay Siliconix FUNCTIONAL BLOCK DIAGRAM Si3861BDV TSOP-6 4 Top View 2, 3 S2 D2 Q2 R2 1 6 R1, C1 6 R1, C1 D2 2 5 ON/OFF D2 3 4 S2 Q1 5 ON/OFF 1 Ordering Information: Si3861BDV-T1-E3 (Lead (Pb)-free) Si3861BDV-T1-GE3 (Lead (Pb)-free and Halogen-free) R2 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Input Voltage ON/OFF Voltage Continuousa, b Load Current Limit VIN 20 VON/OFF 8 a a Maximum Power Dissipation Operating Junction and Storage Temperature Range ESD Rating, MIL-STD-883D Human Body Model (100 pF, 1500 Ω) Unit V ± 2.3 IL Pulsedb, c Continuous Intrinsic Diode Conduction Symbol A ±4 IS -1 PD 0.83 TJ, Tstg - 55 to 150 °C ESD 3 kV W THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Maximum Junction-to-Ambient (Continuous Current)a RthJA 120 150 Maximum Junction-to-Foot (Q2) RthJF 60 80 Unit °C/W SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Reverse Leakage Current IFL VIN = 30 V, VON/OFF = 0 V Diode Forward Voltage VSD IS = - 1 A Typ. Max. Unit 1 µA -1 V 20 V OFF Characteristics - 0.8 ON Characteristics Input Voltage Range On-Resistance (P-Channel) at 1 A On-State (P-Channel) Drain-Current VIN RDS(on) ID(on) 4.5 VON/OFF = 1.5 V, ID = 1 A VIN = 10 V 0.060 0.075 VIN = 5.0 V 0.096 0.120 VIN = 4.5 V 0.115 0.145 VIN-OUT ≤ 0.2 V, VIN = 10 V, VON/OFF = 1.5 V 1 VIN-OUT ≤ 0.3 V, VIN = 5 V, VON/OFF = 1.5 V 1 Ω A Notes: a. Surface Mounted on FR4 board. b. VIN = 12 V, VON/OFF = 8 V, TA = 25 °C. c. Pulse test: pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73343 S09-2110-Rev. B, 12-Oct-09 New Product Si3861BDV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.9 0.50 VON/OFF = 1.5 V to 8 V 0.45 0.8 0.40 0.7 0.35 0.6 0.30 V DROP (V) V DROP (V) VON/OFF = 1.5 V to 8 V TJ = 125 C 0.25 0.20 TJ = 25 C 0.5 TJ = 125 °C 0.4 0.3 0.15 TJ = 25 °C 0.2 0.10 0.1 0.05 0.0 0.00 0 1 2 3 4 5 0 6 1 2 4 5 6 IL - (A) IL - (A) VDROP vs. IL at VIN = 5 V VDROP vs. IL at VIN = 10 V 1.2 2.0 IL = 1 A VON/OFF = 1.5 V to 8 V 1.8 VON/OFF = 1.5 V to 8 V 1.0 1.6 1.4 VDROP (V) 0.8 V DROP (V) 3 0.6 TJ = 125 °C TJ = 25 °C 0.4 1.2 1.0 0.8 0.6 0.4 0.2 TJ = 125 °C 0.2 TJ = 25 C 0.0 0.0 0 1 2 3 4 5 0 6 2 4 IL - (A) 10 12 VIN (V) 2.0 0.08 IL = 1 A VON/OFF = 1.5 V to 8 V 0.04 IL = 1 A VON/OFF = 1.5 V to 8 V 1.8 R DS(on) - On-Resistance (Ω) V DROP Variance (V) 8 VDROP vs. VIN at = 1 A VDROP vs. IL at VIN = 4.5 V 0.06 6 VIN = 5 V 0.02 VIN = 10 V 0.00 - 0.02 1.6 1.4 1.2 1.0 0.8 TJ = 125 C 0.6 0.4 0.2 TJ = 25 °C - 0.04 - 50 0.0 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) VDROP Variance vs. Junction Temperature Document Number: 73343 S09-2110-Rev. B, 12-Oct-09 0 2 4 6 8 10 12 VIN (V) On-Resistance vs. Input Voltage www.vishay.com 3 New Product Si3861BDV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.8 18 1.6 14 td(off) VIN = 5 V 1.2 12 Time ( µs) R DS(on) - On-Resistance (Normalized) 1.4 1.0 0.8 0.6 10 8 td(on) 6 tr IL = 1 A VON/OFF = 1.5 V to 8 V 0.4 4 0.2 2 0.0 - 100 0 - 50 0 50 100 150 200 0 2 4 6 TJ - Junction Temperature ( C) 8 10 Switching Variation R2 at VIN = 10 V, R1 = 20 kΩ 14 10 tf IL = 1 A VON/OFF = 3 V Ci = 10 µF Co = 1 µF 12 8 10 td(off) Time ( µs) 6 tr 4 tr tf 8 6 t d(off) td(on) td(on) 4 IL = 1 A VON/OFF = 3 V Ci = 10 µF Co = 1 µF 2 2 0 0 0 2 4 6 8 10 0 12 2 4 6 8 10 12 R2 (kΩ) R2 (kΩ) Switching Variation R2 at VIN = 4.5 V, R1 = 20 kΩ Switching Variation R2 at VIN = 5 V, R1 = 20 kΩ 250 120 td(off) td(off) 100 200 tf IL = 1 A VON/OFF = 3 V Ci = 10 µF Co = 1 µF 150 80 Time ( µs) Time ( µs) 12 R2 (k ) Normalized On-Resistance vs. Junction Temperature Time ( µs) IL = 1 A VON/OFF = 3 V Ci = 10 µF Co = 1 µF tf 16 VIN = 10 V tf 100 IL = 1 A VON/OFF = 3 V Ci = 10 µF Co = 1 µF 60 40 tr td(on) tr 50 20 td(on) 0 0 0 20 40 60 80 100 R2 (kΩ) Switching Variation R2 at VIN = 10 V, R1 = 300 kΩ www.vishay.com 4 120 0 20 40 60 80 100 120 R2 (kΩ) Switching Variation R2 at VIN = 5 V, R1 = 300 kΩ Document Number: 73343 S09-2110-Rev. B, 12-Oct-09 New Product Si3861BDV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 120 tf 100 td(off) Time ( µs) 80 IL = 1 A VON/OFF = 3 V Ci = 10 µF Co = 1 µF 60 40 tr td(on) 20 0 0 20 40 60 80 100 120 R2 (kΩ) Switching Variation R2 at VIN = 4.5 V, R1 = 300 kΩ 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 150 C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 10 -3 4. Surface Mounted 10 -2 10 -1 1 10 100 600 Square Wave Pulse Dureation (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73343. Document Number: 73343 S09-2110-Rev. B, 12-Oct-09 www.vishay.com 5 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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