Si3861BDV
Vishay Siliconix
Load Switch with Level-Shift
FEATURES
PRODUCT SUMMARY
VDS2 (V)
RDS(on) (Ω)
0.075 at VIN = 10 V
± 2.3
4.5 to 20
0.120 at VIN = 5.0 V
± 1.9
0.145 at VIN = 4.5 V
± 1.7
• Halogen-free According to IEC 61249-2-21
Definition
• 4.5 V Rated
• ESD Protected: 3000 V
• 105 mΩ Low RDS(on) TrenchFET®
• 4.5 V to 20 V Input
• 1.5 V to 8 V Logic Level Control
• Low Profile, Small Footprint TSOP-6 Package
• 3000 V ESD Protection On Input Switch, VON/OFF
• Adjustable Slew-Rate
• Compliant to RoHS Directive 2002/95/EC
ID (A)
DESCRIPTION
The Si3861BDV includes a P- and N-Channel MOSFET in a
single TSOP-6 package. The low on-resistance P-Channel
TrenchFET® is tailored for use as a load switch. The
N-Channel, with an external resistor, can be used as a level-
shift to drive the P-Channel load-switch. The N-Channel
MOSFET has internal ESD protection and can be driven by
logic signals as low as 1.5 V. The Si3861DV operates on
supply lines from 4.5 to 20 V, and can drive loads up to 2.3 A.
APPLICATION CIRCUITS
Si3861BDV
10
tf
2, 3
4
8
VOUT
VIN
td(off)
Q2
C1
6
Time ( µS)
R1
6
6
tr
4
5
ON/OFF
LOAD
Co
Q1
IL = 1 A
VON/OFF = 3 V
Ci = 10 µF
Co = 1 µF
2
td(on)
0
Ci
1
0
GND
COMPONENTS
R1
4
6
8
10
12
R2 (kΩ)
R2
R2
2
Pull-Up Resistor
Typical 10 kΩ to 1 mΩ*
R2
Optional Slew-Rate Control
Typical 0 to 100 kΩ*
C1
Optional Slew-Rate Control
Typical 1000 pF
Note: For R2 switching variations with other VIN/R1
combinations See Typical Characteristics
The Si3861BDV is ideally suited for high-side load switching
in portable applications. The integrated N-Channel level-shift
device saves space by reducing external components. The
slew rate is set externally so that rise-times can be tailored to
different load types.
Note:
* Minimum R1 value should be at least 10 x R2 to ensure Q1 turn-on.
Document Number: 73343
S09-2110-Rev. B, 12-Oct-09
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1
New Product
Si3861BDV
Vishay Siliconix
FUNCTIONAL BLOCK DIAGRAM
Si3861BDV
TSOP-6
4
Top View
2, 3
S2
D2
Q2
R2
1
6
R1, C1
6
R1, C1
D2
2
5
ON/OFF
D2
3
4
S2
Q1
5
ON/OFF
1
Ordering Information: Si3861BDV-T1-E3 (Lead (Pb)-free)
Si3861BDV-T1-GE3 (Lead (Pb)-free and Halogen-free)
R2
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Input Voltage
ON/OFF Voltage
Continuousa, b
Load Current
Limit
VIN
20
VON/OFF
8
a
a
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
ESD Rating, MIL-STD-883D Human Body Model (100 pF, 1500 Ω)
Unit
V
± 2.3
IL
Pulsedb, c
Continuous Intrinsic Diode Conduction
Symbol
A
±4
IS
-1
PD
0.83
TJ, Tstg
- 55 to 150
°C
ESD
3
kV
W
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Maximum Junction-to-Ambient (Continuous Current)a
RthJA
120
150
Maximum Junction-to-Foot (Q2)
RthJF
60
80
Unit
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Reverse Leakage Current
IFL
VIN = 30 V, VON/OFF = 0 V
Diode Forward Voltage
VSD
IS = - 1 A
Typ.
Max.
Unit
1
µA
-1
V
20
V
OFF Characteristics
- 0.8
ON Characteristics
Input Voltage Range
On-Resistance (P-Channel) at 1 A
On-State (P-Channel) Drain-Current
VIN
RDS(on)
ID(on)
4.5
VON/OFF = 1.5 V, ID = 1 A
VIN = 10 V
0.060
0.075
VIN = 5.0 V
0.096
0.120
VIN = 4.5 V
0.115
0.145
VIN-OUT ≤ 0.2 V, VIN = 10 V, VON/OFF = 1.5 V
1
VIN-OUT ≤ 0.3 V, VIN = 5 V, VON/OFF = 1.5 V
1
Ω
A
Notes:
a. Surface Mounted on FR4 board.
b. VIN = 12 V, VON/OFF = 8 V, TA = 25 °C.
c. Pulse test: pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 73343
S09-2110-Rev. B, 12-Oct-09
New Product
Si3861BDV
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.9
0.50
VON/OFF = 1.5 V to 8 V
0.45
0.8
0.40
0.7
0.35
0.6
0.30
V DROP (V)
V DROP (V)
VON/OFF = 1.5 V to 8 V
TJ = 125 C
0.25
0.20
TJ = 25 C
0.5
TJ = 125 °C
0.4
0.3
0.15
TJ = 25 °C
0.2
0.10
0.1
0.05
0.0
0.00
0
1
2
3
4
5
0
6
1
2
4
5
6
IL - (A)
IL - (A)
VDROP vs. IL at VIN = 5 V
VDROP vs. IL at VIN = 10 V
1.2
2.0
IL = 1 A
VON/OFF = 1.5 V to 8 V
1.8
VON/OFF = 1.5 V to 8 V
1.0
1.6
1.4
VDROP (V)
0.8
V DROP (V)
3
0.6
TJ = 125 °C
TJ = 25 °C
0.4
1.2
1.0
0.8
0.6
0.4
0.2
TJ = 125 °C
0.2
TJ = 25 C
0.0
0.0
0
1
2
3
4
5
0
6
2
4
IL - (A)
10
12
VIN (V)
2.0
0.08
IL = 1 A
VON/OFF = 1.5 V to 8 V
0.04
IL = 1 A
VON/OFF = 1.5 V to 8 V
1.8
R DS(on) - On-Resistance (Ω)
V DROP Variance (V)
8
VDROP vs. VIN at = 1 A
VDROP vs. IL at VIN = 4.5 V
0.06
6
VIN = 5 V
0.02
VIN = 10 V
0.00
- 0.02
1.6
1.4
1.2
1.0
0.8
TJ = 125 C
0.6
0.4
0.2
TJ = 25 °C
- 0.04
- 50
0.0
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
VDROP Variance vs. Junction Temperature
Document Number: 73343
S09-2110-Rev. B, 12-Oct-09
0
2
4
6
8
10
12
VIN (V)
On-Resistance vs. Input Voltage
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New Product
Si3861BDV
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1.8
18
1.6
14
td(off)
VIN = 5 V
1.2
12
Time ( µs)
R DS(on) - On-Resistance
(Normalized)
1.4
1.0
0.8
0.6
10
8
td(on)
6
tr
IL = 1 A
VON/OFF = 1.5 V to 8 V
0.4
4
0.2
2
0.0
- 100
0
- 50
0
50
100
150
200
0
2
4
6
TJ - Junction Temperature ( C)
8
10
Switching Variation
R2 at VIN = 10 V, R1 = 20 kΩ
14
10
tf
IL = 1 A
VON/OFF = 3 V
Ci = 10 µF
Co = 1 µF
12
8
10
td(off)
Time ( µs)
6
tr
4
tr
tf
8
6
t d(off)
td(on)
td(on)
4
IL = 1 A
VON/OFF = 3 V
Ci = 10 µF
Co = 1 µF
2
2
0
0
0
2
4
6
8
10
0
12
2
4
6
8
10
12
R2 (kΩ)
R2 (kΩ)
Switching Variation
R2 at VIN = 4.5 V, R1 = 20 kΩ
Switching Variation
R2 at VIN = 5 V, R1 = 20 kΩ
250
120
td(off)
td(off)
100
200
tf
IL = 1 A
VON/OFF = 3 V
Ci = 10 µF
Co = 1 µF
150
80
Time ( µs)
Time ( µs)
12
R2 (k )
Normalized On-Resistance
vs. Junction Temperature
Time ( µs)
IL = 1 A
VON/OFF = 3 V
Ci = 10 µF
Co = 1 µF
tf
16
VIN = 10 V
tf
100
IL = 1 A
VON/OFF = 3 V
Ci = 10 µF
Co = 1 µF
60
40
tr
td(on)
tr
50
20
td(on)
0
0
0
20
40
60
80
100
R2 (kΩ)
Switching Variation
R2 at VIN = 10 V, R1 = 300 kΩ
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4
120
0
20
40
60
80
100
120
R2 (kΩ)
Switching Variation
R2 at VIN = 5 V, R1 = 300 kΩ
Document Number: 73343
S09-2110-Rev. B, 12-Oct-09
New Product
Si3861BDV
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
120
tf
100
td(off)
Time ( µs)
80
IL = 1 A
VON/OFF = 3 V
Ci = 10 µF
Co = 1 µF
60
40
tr
td(on)
20
0
0
20
40
60
80
100
120
R2 (kΩ)
Switching Variation
R2 at VIN = 4.5 V, R1 = 300 kΩ
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 150 C/W
0.02
3. TJM - TA = PDMZthJA(t)
Single Pulse
0.01
10 -4
10 -3
4. Surface Mounted
10 -2
10 -1
1
10
100
600
Square Wave Pulse Dureation (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73343.
Document Number: 73343
S09-2110-Rev. B, 12-Oct-09
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Revision: 01-Jan-2022
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Document Number: 91000