SI4425DY

January 2001 Si4425DY Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for notebook computer applications: load switching and power management, battery charging circuits, and DC/DC conversion. Features -11 A, -30 V. RDS(ON) = 0.014 Ω @ VGS = -10 V, RDS(ON) = 0.020 Ω @ VGS = -4.5 V. Low gate charge (30nC typical). High performance trench technology for extremely low RDS(ON). High power and current handling capability. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D D D D 5 4 3 2 1 44 25 G 6 7 8 SO-8 pin 1 S S S Absolute Maximum Ratings Symbol Parameter TA = 25oC unless otherwise noted Si4425DY Units VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) (Note 1a) -30 ±20 -11 -50 2.5 1.2 1 -55 to 150 V V A W TJ,TSTG RθJA RθJC Operating and Storage Temperature Range °C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 50 25 °C/W °C/W © 2001 Fairchild Semiconductor International Si4425DY Rev.A Electrical Characteristics (TA = 25 OC unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Zero Gate Voltage Drain Current VGS = 0 V, I D = -250 µA ID = -250 µA, Referenced to 25 C VDS = -24 V, VGS = 0 V TJ = 55°C VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V VDS = VGS, ID = -250 µA ID = 250 µA, Referenced to 25 oC VGS = -10 V, I D = -11 A TJ =125°C VGS = -4.5 V, I D = -9 A o -30 -22 -1 -10 100 -100 -1 -1.7 4.3 0.011 0.016 0.015 -50 32 3000 870 360 0.014 0.023 0.02 -3 V mV/oC µA µA nA nA V mV/oC ∆BVDSS/∆TJ IDSS IGSSF IGSSR VGS(th) Gate - Body Leakage, Forward Gate - Body Leakage, Reverse (Note 2) ON CHARACTERISTICS Gate Threshold Voltage Gate Threshold Voltage Temp. Coefficient Static Drain-Source On-Resistance ∆VGS(th)/∆TJ RDS(ON) Ω ID(ON) gFS Ciss Coss Crss tD(on) tr tD(off) tf Qg Qgs Qgd IS VSD Notes: On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VGS = -10 V, VDS = -5 V VDS = -10 V, I D = -11 A VDS = -15 V, VGS = 0 V, f = 1.0 MHz A S pF pF pF 22 27 80 140 42 ns ns ns ns nC nC nC -2.1 A V DYNAMIC CHARACTERISTICS SWITCHING CHARACTERISTICS Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = -15 V, I D = -1 A VGEN = -10 V, RGEN = 6 Ω 12 16 50 100 VDS = -15 V, I D = -11 A, VGS = -5 V 30 9 11 DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = -2.1 A (Note 2) -0.72 -1.2 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 50OC/W on a 1 in2 pad of 2oz copper. b. 105OC/W on a 0.04 in2 pad of 2oz copper. c. 125OC/W on a 0.006 in2 pad of 2oz copper. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. Si4425DY Rev.A Typical Electrical Characteristics 50 - I D , DRAIN-SOURCE CURRENT (A) 2.5 DRAIN-SOURCE ON-RESISTANCE R DS(ON), NORMALIZED 40 VGS = -10V - 6.0V - 4.5V - 3.5V 2 V GS = -3.5V - 4.0V 30 1.5 - 4.5 V - 5.5V - 7.0V 20 - 3.0V 1 -10V 10 0 0 0.6 1.2 1.8 2.4 3 - VDS , DRAIN-SOURCE VOLTAGE (V) 0.5 0 10 20 30 40 50 - I D , DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Dain Current and Gate Voltage. 0.05 R DS(ON), ON-RESISTANCE (OHM) 1.6 DRAIN-SOURCE ON-RESISTANCE 1.4 ID = -11A VGS = -10V I D = -5.5A 0.04 R DS(ON), NORMALIZED 1.2 0.03 1 0.02 T = 125° C J 0.8 0.01 2 5° C 0.6 -50 -25 0 25 50 75 100 125 150 0 0 2 4 6 8 10 - VGS , GATE TO SOURCE VOLTAGE (V) TJ , JUNCTION TEMPERATURE (° C) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. V DS = -5.0V - I D , DRAIN CURRENT (A) 40 TJ = -55° C - I S , REVERSE DRAIN CURRENT (A) 50 50 25° C 125° C VGS = 0V 10 TJ = 125° C 1 30 25° C 0.1 20 - 55° C 10 0.01 0 1 2 3 4 5 - VGS , GATE TO SOURCE VOLTAGE (V) 0.001 0 0.4 0.8 1.2 - V SD , BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. Si4425DY Rev.A Typical Electrical Characteristics (continued) 10 - VGS , GATE-SOURCE VOLTAGE (V) 6000 ID = -11A 8 VDS = -5V -10V CAPACITANCE (pF) 4000 C iss 2000 1000 500 -15V 6 Coss 4 C rss f = 1 M Hz VGS = 0 V 0.2 0.5 1 2 5 10 20 30 2 200 0 0 12 24 36 48 60 Q g , GATE CHARGE (nC) 100 0.1 - VDS , DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 100 30 - I D, DRAIN CURRENT (A) 10 3 N) S(O RD I LIM T 50 10 1m 10m 1s 10 0m DC s 10 s 0u s POWER (W) s 40 SINGLE PULSE RθJA =125°C/W TA = 25°C s 30 0.5 0.05 0.01 0.05 VGS = -10V SINGLE PULSE R θJA = 125° C/W TA = 25° C 0.1 0.3 1 3 20 10 10 30 50 0 0.001 0.01 0.1 1 10 100 300 - VDS , DRAIN-SOURCE VOLTAGE (V) SINGLE PULSE TIME (SEC) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0.002 0.001 0.0001 0.001 0.01 0.1 t1 , TIME (sec) 1 10 D = 0.5 0.2 0.1 0.05 P(pk) 0.02 0.01 Single Pulse R θJA (t) = r(t) * R θJA R θJA = 125°C/W t1 t2 TJ - TA = P * RθJA (t) Duty Cycle, D = t1 /t2 100 300 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. Si4425DYRev.A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ E2CMOSTM FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ DISCLAIMER ISOPLANAR™ MICROWIRE™ POP™ PowerTrench™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 TinyLogic™ UHC™ VCX™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.