SI4425DDY-T1-GE3

Si4425DDY Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0098 at VGS = 10 V - 19.7 0.0165 at VGS = 4.5 V - 15.2 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested Qg (Typ.) 27 nC APPLICATIONS • Load Switches - Notebook PCs - Desktop PCs SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D S G Top View D Ordering Information: Si4425DDY-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS - 30 Gate-Source Voltage VGS ± 20 TC = 25 °C Continuous Drain Current (TJ = 150 °C) - 15.7 ID TA = 25 °C - 13b, c - 10.4b, c Pulsed Drain Current IDM TC = 25 °C - 4.7 IS TA = 25 °C - 2.1b, c 5.7 TC = 70 °C 3.6 PD TA = 25 °C W 2.5b, c 1.6b, c TA = 70 °C Operating Junction and Storage Temperature Range A - 50 TC = 25 °C Maximum Power Dissipation V - 19.7 TC = 70 °C TA = 70 °C Continous Source-Drain Diode Current Unit TJ, Tstg °C - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient b, d Maximum Junction-to-Foot (Drain) Symbol Typical Maximum t ≤ 10 s RthJA 35 50 Steady State RthJF 18 22 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 85 °C/W. Document Number: 64732 S09-0314-Rev. A, 02-Mar-09 www.vishay.com 1 Si4425DDY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 30 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage ID = - 250 µA VGS(th) VDS = VGS , ID = - 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs V - 20 mV/°C 4.9 - 1.2 - 2.5 V ± 100 nA VDS = - 30 V, VGS = 0 V -1 VDS = - 30 V, VGS = 0 V, TJ = 55 °C -5 VDS ≤ - 5 V, VGS = - 10 V - 30 µA A VGS = - 10 V, ID = - 13 A 0.0081 0.0098 VGS = - 4.5 V, ID = - 10 A 0.0137 0.0165 VDS = - 15 V, ID = - 13 A 40 Ω S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Rg 2610 VDS = - 15 V, VGS = 0 V, f = 1 MHz VDS = - 15 V, VGS = - 10 V, ID = - 13 A td(off) pF 53 80 27 41 8 VDS = - 15 V, VGS = - 4.5 V, ID = - 13 A f = 1 MHz VDD = - 15 V, RL = 1.5 Ω ID ≅ - 10 A, VGEN = - 4.5 V, Rg = 1 Ω 0.4 2.1 4.2 52 78 41 62 36 54 tf 15 25 td(on) 12 20 tr td(off) nC 13 td(on) tr 460 395 VDD = - 15 V, RL = 1.5 Ω ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω tf 9 15 42 63 9 15 Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C - 4.7 - 50 IS = - 10 A, VGS = 0 V IF = - 10 A, dI/dt = 100 A/µs, TJ = 25 °C A - 0.8 - 1.2 V 20 30 ns 10 20 nC 10 9 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 64732 S09-0314-Rev. A, 02-Mar-09 Si4425DDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 50 2.0 VGS = 10 V thru 4 V I D - Drain Current (A) I D - Drain Current (A) 40 30 20 1.5 1.0 TC = 25 °C 0.5 10 VGS = 3 V TC = 125 °C TC = - 55 °C 0 0.0 0.0 0.5 1.0 1.5 2.0 0 1 VDS - Drain-to-Source Voltage (V) 3 4 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.020 4000 0.015 VGS = 4.5 V 0.010 VGS = 10 V Ciss 3000 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 2 2000 0.005 1000 Coss Crss 0.000 0 0 10 20 30 40 50 0 5 10 20 25 30 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current Capacitance 1.8 10 ID = 13 A ID = 13 A 8 6 VDS = 15 V VDS = 24 V 4 1.5 (Normalized) R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 15 VGS = 10 V 1.2 VGS = 4.5 V 0.9 2 0 0 10 20 30 40 Qg - Total Gate Charge (nC) Gate Charge Document Number: 64732 S09-0314-Rev. A, 02-Mar-09 50 60 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si4425DDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.04 R DS(on) - On-Resistance (Ω) I S - Source Current (A) 100 TJ = 150 °C 10 TJ = 25 °C 1 0.03 0.02 TJ = 125 °C 0.01 TJ = 25 °C 0.1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 0 1.2 2 4 6 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 2.2 10 100 80 Power (W) VGS(th) (V) 1.9 1.6 ID = 250 µA 60 40 1.3 20 1.0 - 50 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 10 Time (s) TJ - Temperature (°C) Single Pulse Power (Junction-to-Ambient) Threshold Voltage 100 Limited by RDS(on)* 100 µA I D - Drain Current (A) 10 1 ms 10 ms 1 100 ms 0.1 TA = 25 °C Single Pulse BVDSS Limited 0.01 0.1 1s 10 s DC 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 64732 S09-0314-Rev. A, 02-Mar-09 Si4425DDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 24 I D - Drain Current (A) 20 16 12 8 4 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating* 1.8 8 1.5 6 Power (W) Power (W) 1.2 4 0.9 0.6 2 0.3 0.0 0 0 25 50 75 100 125 150 0 25 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power, Junction-to-Case Power, Junction-to-Ambient 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 64732 S09-0314-Rev. A, 02-Mar-09 www.vishay.com 5 Si4425DDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 85 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 100 10 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?64732. www.vishay.com 6 Document Number: 64732 S09-0314-Rev. A, 02-Mar-09 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000