SI4425FDY-T1-GE3

Si4425FDY www.vishay.com Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES SO-8 Single D 8 D 7 D 6 D 5 • TrenchFET® Gen IV p-channel power MOSFET • 100% Rg tested • Material categorization:, for definitions of compliance please see www.vishay.com/doc?99912 Top View 1 S 2 S 3 S APPLICATIONS 4 G • Battery management • Circuit protection G • Load switch PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = -10 V RDS(on) max. () at VGS = -4.5 V Qg typ. (nC) ID (A) a Configuration S • Adapter switch -30 0.0095 0.0160 13 -18.3 Single • Motor drive control P-Channel MOSFET D ORDERING INFORMATION Package Lead (Pb)-free and halogen-free SO-8 Si4425FDY-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) SYMBOL VDS VGS TC = 25 °C TC = 70 °C TA =25 °C TA = 70 °C Pulsed drain current (t = 100 μs) LIMIT -30 -20 / +16 -18.3 -14.7 -12.7 b, c -10.2 b, c -70 -4 -1.9 b, c 15 11.25 4.8 3.1 2.3 b, c 1.5 b, c -55 to +150 260 ID IDM Continuous source-drain diode current TC = 25 °C TA = 70 °C IS Single pulse avalanche current Single pulse avalanche energy L = 0.1 mH IAS EAS TC = 25 °C TC = 70 °C Maximum power dissipation TA = 25 °C TA = 70 °C Operating junction and storage temperature range Soldering recommendations (peak temperature) d, e PD TJ, Tstg UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM Maximum junction-to-ambient b, d t  10 s RthJA 42 53 Maximum junction-to-case (drain) Steady state RthJF 21 26 UNIT °C/W Notes a. Package limited b. Surface mounted on 1" x 1" FR4 board c. t = 10 s d. Maximum under steady state conditions is 90 °C/W e. TC = 25 °C S19-0330-Rev. A, 08-Apr-2019 Document Number: 77095 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4425FDY www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = -250 μA -30 - - - V -13 - - 5 - Static Drain-source breakdown voltage VDS temperature coefficient VDS/TJ VGS(th) temperature coefficient VGS(th)/TJ Gate-source threshold voltage ID = -250 μA mV/°C VGS(th) VDS = VGS, ID = -250 μA -1 - -2.2 V Gate-source leakage IGSS VDS = 0 V, VGS = -20 V / +16 V - - ± 100 nA Zero gate voltage drain current IDSS On-state drain current a ID(on) Drain-source on-state resistance a Forward transconductance a RDS(on) gfs VDS = -30 V, VGS = 0 V - - -1 VDS = -30 V, VGS = 0 V, TJ = 55 °C - - -10 VDS  -5 V, VGS = 10 V -10 - - A  VGS = -10 V, ID = -10 A - 0.0077 0.0095 VGS = -4.5 V, ID = -10 A - 0.0127 0.0160 VDS = -10 V, ID = -10 A - 47 - - 1620 - VDS = -15 V, VGS = 0 V, f = 1 MHz - 250 - - 56 - VDS = -15 V, VGS = -10 V, ID = -10 A - 27 41 VDS = -15 V, VGS = -4.5 V, ID = -10 A - 13 20 - 5.4 - μA S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Rg Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time VDS = -15 V, VGS = -4.5 V, ID = -10 A - 4.3 - 4 10 17 - 22 44 - 48 96 - 29 58 tf - 23 46 td(on) - 8 18 - 6 12 - 42 84 - 22 44 - - -4 - - -70 f = 1 MHz td(on) tr td(off) tr td(off) VDD = -15 V, RL = 1.5 , ID  -10 A, VGEN = -4.5 V, Rg = 1  VDD = -15 V, RL = 1.5 , ID  -10 A, VGEN = -10 V, Rg = 1  tf pF nC  ns Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulse diode forward current ISM Body diode voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb TC = 25 °C IS = -5 A, VGS = 0 V IF = -10 A, di/dt = 100 A/μs, TJ = 25 °C A - -0.78 -1.2 V - 26 52 ns - 12 24 nC - 12 - - 14 - ns Notes a. Pulse test; pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing  Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S19-0330-Rev. A, 08-Apr-2019 Document Number: 77095 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4425FDY www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 100 VGS = 4 V 100 1000 1st line 2nd line 60 40 100 VGS = 3 V 2nd line ID - Drain Current (A) 80 2nd line ID - Drain Current (A) 10000 20 1000 80 60 TC = 25 °C 100 40 20 VGS = 2 V 0 0 1 2 3 4 TC = 125 °C TC = -55 °C 10 0 10 0 5 1.2 2.4 3.6 4.8 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics Axis Title 6 Axis Title 10000 0.0400 10000 10 000 Ciss 0.0160 100 VGS = 10 V 1000 1000 Coss 1st line 2nd line 1000 VGS = 4.5 V 0.0240 2nd line C - Capacitance (pF) 0.0320 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 1st line 2nd line VGS = 10 V thru 5 V 120 100 100 Crss 0.0080 0 20 40 60 80 10 10 10 0.0000 0 100 6 12 18 24 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 30 Axis Title 10000 1.5 ID = 10 A 8 6 4 VDS = 10 V, 15 V, 20 V 2 0 0 6 12 18 24 Qg - Total Gate Charge (nC) Gate Charge S19-0330-Rev. A, 08-Apr-2019 30 1.4 VGS = 10 V, 10 A 1000 1.2 1st line 2nd line 2nd line RDS(on) - On-Resistance (Normalized) 2nd line VGS - Gate-to-Source Voltage (V) 10 1.1 VGS = 4.5 V, 10 A 100 0.9 10 0.8 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 77095 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4425FDY www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 100 0.040 10000 1000 TJ = 25 °C TJ = 150 °C 1 100 0.1 0.01 1000 0.024 0.2 0.4 0.6 0.8 1.0 TJ = 125 °C 0.016 100 0.008 TJ = 25 °C 10 0 10 0 0 1.2 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Axis Title Axis Title 10000 1.0 10000 500 400 ID = 250 μA 1st line 2nd line ID = 5 mA 0.1 1000 2nd line P - Power (W) 1000 0.4 100 300 1st line 2nd line 0.7 2nd line VGS(th) - Variance (V) 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 10 1st line 2nd line 2nd line IS - Source Current (A) ID = 10 A 0.032 200 100 -0.2 100 10 -0.5 -50 -25 0 25 50 75 10 0 0.0001 100 125 150 0.001 0.01 0.1 1 TJ - Junction Temperature (°C) t - Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient Axis Title 100 10000 ID limited 10 100 μs 1 ms 1 Limited by RDS(on) 1000 1st line 2nd line 2nd line ID - Drain Current (A) IDM limited 10 ms a 100 ms 100 1s 10 s 0.1 TA = 25 °C, single pulse 0.01 0.01 BVDSS limited DC 10 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Safe Operating Area, Junction-to-Ambient Note a. VGS > minimum VGS at which RDS(on) is specified S19-0330-Rev. A, 08-Apr-2019 Document Number: 77095 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4425FDY www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 10000 20 1000 12 1st line 2nd line 2nd line ID - Drain Current (A) 16 8 100 4 10 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating a Axis Title Axis Title 10000 2.0 4.8 1st line 2nd line 0.8 100 0.4 1000 3.6 1st line 2nd line 1000 1.2 2nd line P - Power (W) 1.6 2nd line P - Power (W) 10000 6 2.4 100 1.2 10 0 0 25 50 75 100 125 150 10 0 0 25 50 75 100 125 TA - Ambient Temperature (°C) TC - Case Temperature (°C) Power, Junction-to-Ambient Power, Junction-to-Case 150 Note a. The power dissipation PD is based on TJ max. = 25 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S19-0330-Rev. A, 08-Apr-2019 Document Number: 77095 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4425FDY www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 10000 Duty cycle = 0.5 Notes 0.2 PDM 0.1 0.1 1000 1st line 2nd line Normalized Effective Transient Thermal Impedance 1 0.05 t1 t2 t1 1. Duty cycle, D = t 2 2. Per unit base = RthJA = 90 °C/W 0.02 Single pulse 3. TJM - TA = PDMZthJA 100 (t) 4. Surface mounted 0.01 0.0001 0.001 0.01 0.1 1 10 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title 10000 Duty cycle = 0.5 0.2 1000 0.1 0.1 1st line 2nd line Normalized Effective Transient Thermal Impedance 1 0.05 100 0.02 Single pulse 0.01 0.0001 10 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case                   Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?77095. S19-0330-Rev. A, 08-Apr-2019 Document Number: 77095 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 09-Jul-2021 1 Document Number: 91000